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PD - 9.1697
TO-220AB
PRELIMINARY
IRL3402
HEXFET® Power MOSFET
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 85
@ TC = 100°C Continuous Drain Current, VGS @ 5.0V 54 A
I
D
I
DM
PD @TC = 25°C Power Dissipation 110 W
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 340
Linear Derating Factor 0.91 W/°C
Gate-to-Source Voltage ± 10 V
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy 290 mJ
Avalanche Current 51 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.1
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
D
V
= 20V
DSS
R
S
DS(on)
= 85A
I
D
= 0.01Ω
°C
10/31/97
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IRL3402
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.010 VGS = 4.5V, ID = 51A
––– ––– 0.008
Ω
VGS = 7.0V, ID = 51A
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 65 ––– ––– S VDS = 10V, ID = 51A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 16V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
µA
nA
= 20V, VGS = 0V
V
DS
= 10V
V
GS
Total Gate Charge ––– – – – 78 ID = 51A
Gate-to-Source Charge ––– ––– 1 8 nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 4.5V, See Fig. 6
Turn-On Delay Time –– – 10 ––– VDD = 10V
Rise Time ––– 140 –––
Turn-Off Delay Time –– – 8 0 ––– RG = 5.0Ω, VGS = 4.5V
ns
ID = 51A
Fall Time ––– 120 ––– RD = 0.19Ω,
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3300 ––– VGS = 0V
Output Capacitance ––– 1400 ––– pF VDS = 15V
Reverse Transfer Capacitance –– – 5 10 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– – – – 1.3 V TJ = 25°C, IS = 51A, VGS = 0V
Reverse Recovery Time – – – 7 2 11 0 ns TJ = 25°C, IF = 51A
Reverse RecoveryCharge ––– 1 60 240 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L = 220µH
J
= 51A.
AS
≤ 51A, di/dt ≤ 82A/µs, V
DD
≤ V
(BR)DSS
,
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
85
340
showing the
A
p-n junction diode.
D
G
S
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IRL3402
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM
2.25V
2.25V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
2.25V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 150 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
85A
°
T = 25 C
J
°
100
D
I , Drain-to-Source Current (A)
10
2 3 4 5 6
V , Gate-to-Source Voltage (V)
GS
T = 150 C
J
1
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
4.5V
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IRL3402
6000
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V
=
0V,
C
C
C
C
iss
oss
rss
f = 1MHz
+ C
+ C
C SHORTED
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
C
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
°
T = 150 C
J
100
°
T = 25 C
J
15
I =
85 A
D
V = 16V
DS
10
5
GS
V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 20 40 60 80 100 120
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
1000
BY R
DS(on)
10us
13
10
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
D
I , Drain Current (A)I , Drain Current (A)
10
°
= 25 C
C
T T= 150 C
Single Pulse
1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
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IRL3402
100
LIMITED BY PACKAGE
80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
600
TOP
500
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
I
D
23A
32A
51A
°
thJC
1
D = 0.50
0.20
P
1 2
DM
t
1
t
2
0.10
0.1
0.05
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL3402
0.020
( Ω )
0.015
0.010
DS (on)
0.005
R , Drain-to-Source On Resistance
0 50 100 150 200 250 300 350
VGS = 4.5V
I , Drain Current (A)
D
VGS = 7.0V
0.012
( Ω )
0.011
0.010
0.009
0.008
0.007
DS (on)
0.006
R , Drain-to-Source On Resistance
2 3 4 5 6 7 8
V , Gate-to-Source Voltage (V)
GS
ID = 85A
Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
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Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
IRL3402
1 0.54 (.41 5)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO NIN G & TO L ER AN CING P E R A N S I Y14 .5M , 198 2. 3 O UT L INE C O N F O R M S T O J E D E C OU T LINE TO -2 20 A B .
2 CONTR OLLING D IMENSION : INCH 4 HEATSIN K & LEAD M EASUREME NTS DO NOT INCLUDE BURRS .
1 0.29 (.40 5)
4
1 2 3
2X
Part Marking Information
TO-220AB
EXAMPL E : THIS IS AN IRF1010
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
W ITH ASSEMBLY
L O T C O DE 9 B1 M
LOT COD E 9 B1 M
3.78 (.149)
3.54 (.139)
- A -
6.4 7 (.255)
6.1 0 (.240)
1.15 (.045)
MIN
4.0 6 (.160)
3.5 5 (.140)
0.93 (.037)
3X
0.69 (.027)
0 .3 6 (.01 4) M B A M
INTERNATION AL
INTERNATIONAL
R E CTIF IER
R ECT IF IE R
L O GO
LOG O
ASSEMBLY
ASSEMBLY
LO T CO D E
LOT COD E
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
IRF1010
IRF1010
9246
9B 1 M
9B 1 M
LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - SOURCE
4 - D R A IN
0.5 5 (.022)
3X
0.4 6 (.018)
2.92 (.115)
2.64 (.104)
9246
PART NUMBER
PART NUMBER
DATE CODE
DATE CODE
(YYW W)
(YYWW)
YY = YEAR
YY = YEAR
WW = WEEK
WW = WEEK
A
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 10/97
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