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PD - 9.1322B
TO-220AB
IRL3303
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
G
D
V
= 30V
DSS
DS(on)
ID = 38A
= 0.026Ω
R
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A
I
DM
PD @TC = 25°C Power Dissipation 68 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 140
Linear Derating Factor 0.45 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 130 mJ
Avalanche Current 20 A
Repetitive Avalanche Energy 6.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
R
θJC
R
θ CS
R
θJA
Junction-to-Case –––– –––– 2.2
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62
Parameter Min. Typ. Max. Units
8/25/97
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IRL3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.035 – –– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.026 VGS = 10V, ID = 20A
––– ––– 0.040 VGS = 4.5V, ID = 17A
Ω
Gate Threshold Voltage 1.0 ––– – –– V VDS = VGS, ID = 250µA
Forward Transconductance 12 ––– – –– S VDS = 25V, ID = 20A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
––– ––– 25 VDS = 30V, VGS = 0V
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
µA
nA
Total Gate Charge ––– ––– 2 6 ID = 20A
Gate-to-Source Charge –– – ––– 8.8 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– – –– 15 VGS = 4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.4 ––– VDD = 15V
Rise Time ––– 200 –– – ID = 20A
Turn-Off Delay Time ––– 14 ––– RG = 6.5Ω, VGS = 4.5V
ns
Fall Time ––– 36 ––– RD = 0.7Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 870 ––– VGS = 0V
Output Capacitance ––– 340 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 38
––– ––– 140
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 20A, VGS = 0V
Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 20A
Reverse RecoveryCharge ––– 180 280 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 470µH
= 20A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
A
≤ 20A, di/dt ≤ 140A/µs, V
DD
≤ V
(BR)DSS
D
G
S
,
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IRL3303
1000
VGS
TO P 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
100
BOTTOM 2.5V
10
1
D
I , D rain-to -S o urc e C u rre nt (A )
2.5V
20µs PULSE W IDTH
T = 25 °C
0.1
0.1 1 10 100
V , Drain -to -Source V oltag e (V )
DS
J
Fig 1. Typical Output Characteristics
1000
1000
VGS
TO P 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
100
BOTTOM 2.5V
10
2.5V
1
D
I , D rain-to -S o urc e C u rre nt (A )
20µs PULSE WIDTH
T = 175°C
A
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
A
Fig 2. Typical Output Characteristics
2.0
I = 34 A
D
100
10
1
D
I , D r a in-to-So urc e C u r r e nt (A )
0.1
2345678910
T = 25°C
J
T = 175°C
J
V = 15V
DS
20µs PULSE WIDTH
V , Gate -to-S o u rc e V o ltage ( V )
GS
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rm a lized)
0.5
DS(on)
R , Dr ain -to-S ou rc e O n R e si stan ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Ju nc tio n T em peratu re (° C)
J
V = 10V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRL3303
1600
1400
1200
1000
800
600
C , Capac itance (pF)
400
200
0
1 10 100
V = 0V, f = 1MHz
GS
C = C + C , C SH ORTE D
is s gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to -Sou rce Vo ltage (V )
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I = 20 A
V , Gate-to-Source Voltage (V )
12
9
6
3
GS
D
V = 24V
DS
V = 15V
DS
FOR TEST CIRCUIT
A
0
0 10203040
Q , Total Ga te C harg e (nC)
G
SEE FIGUR E 13
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
O PERA TION IN T HIS A REA L IMI TED
B Y R
DS(on)
100
T = 175°C
J
T = 25 °C
10
SD
I , Rev ers e Dr ain C u rren t (A)
1
0.0 0.5 1.0 1.5 2.0 2.5
V , Source-to-Drain Voltage (V)
SD
J
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10
D
I , Drain Cu rrent (A )
T = 2 5°C
C
T = 1 75°C
J
A
Single Pulse
1
1 10 100
V , Drain-to-So urc e Vo ltag e (V)
DS
10µs
100µs
1ms
10ms
A
Fig 8. Maximum Safe Operating Area
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IRL3303
+
-
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
thJC
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
J DM thJC C
1 2
P
DM
t
1
t
2
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IRL3303
D.U.T.
I
AS
L
0.01Ω
+
V
DD
-
R
4.5 V
V
DS
G
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
DS
I
AS
300
250
200
150
100
50
AS
V = 15V
E , S ingle Pu lse Ava lanche E nerg y (m J)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
I
TO P 8.3 A
14A
BOTTOM 20A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
A
Fig 12b. Unclamped Inductive Waveforms
Q
G
4.5 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same T ype as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
-
D
Fig 13b. Gate Charge Test Circuit
V
DS
Page 7
+
-
Peak Diode Recovery dv/dt Test Circuit
IRL3303
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
controlled by Duty Factor "D"
• I
SD
• D.U.T. - Device Under Test
Period
-
D =
G
P.W.
Period
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
Page 8
IRL3303
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.41 5)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1 0.29 (.40 5)
4
1 2 3
6.4 7 (.255)
6.1 0 (.240)
1.15 (.045)
MIN
4.0 6 (.160)
3.5 5 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GA TE
2 - DR AIN
3 - S OURCE
4 - DR AIN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO N IN G & TO L E R A N C ING P ER AN S I Y14 .5M , 198 2. 3 OU T L INE C O N F O R M S T O J E D E C OU T LIN E TO -2 20 -A B .
2 CO NTROLLING DIME NSION : INCH 4 HEATSIN K & LE AD MEASURE MENTS DO NO T INCL UDE BURRS .
2X
Part Marking Information
TO-220AB
EXAMPL E : TH IS IS AN IRF1010
W ITH ASSEMBLY
L O T C O DE 9 B1 M
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8 /97
0.93 (.037)
3X
0.69 (.027)
0 .3 6 (.01 4) M B A M
0.5 5 (.022)
3X
0.4 6 (.018)
2.92 (.115)
2.64 (.104)
A
INTERNA TION AL
R E CTIFIER
L O GO
ASSEMBLY
LO T COD E
IRF1010
9246
9B 1M
PART NUMBER
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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