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PD 9.1696A
PRELIMINARY
IRL3302
HEXFET® Power MOSFET
l Advanced Process Technology
l Optimized for 4.5V Gate Drive
l Ideal for CPU Core DC-DC Converters
l 150°C Operating Temperature
l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 39
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 25 A
I
DM
PD @TC = 25°C Power Dissipation 57 W
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 160
Linear Derating Factor 0.45 W/°C
Gate-to-Source Voltage ± 10 V
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy 130 mJ
Avalanche Current 23 A
Repetitive Avalanche Energy 5.7 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
D
S
TO-220AB
R
DS(on)
V
= 20V
DSS
= 0.020W
ID = 39A
°C
Thermal Resistance
R
qJC
R
qCS
R
qJA
Junction-to-Case ––– 2.2
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
11/18/97
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IRL3302
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
DV
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/DT
Breakdown Voltage Temp. Coefficient ––– 0.022 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.023 VGS = 4.5V, ID = 23A
––– ––– 0.020
W
VGS = 7.0V, ID = 23A
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 21 ––– ––– S VDS = 10V, ID = 23A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
VDS = 20V, VGS = 0V
µA
VGS = 10V
nA
Total Gate Charge ––– ––– 31 ID = 23A
Gate-to-Source Charge ––– ––– 5.7 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– ––– 13 VGS = 4.5V, See Fig. 6
Turn-On Delay Time ––– 7.2 ––– VDD = 10V
Rise Time ––– 110 –––
Turn-Off Delay Time ––– 41 ––– RG = 9.5W, VGS = 4.5V
ns
ID = 23A
Fall Time ––– 89 ––– RD = 2.4W,
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1300 ––– VGS = 0V
Output Capacitance ––– 520 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 190 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25W , I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 23A, VGS = 0V
Reverse Recovery Time ––– 62 94 n s TJ = 25°C, IF = 23A
Reverse Recovery Charge ––– 110 160 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ £ 150°C
= 25°C, L = 0.49mH
J
= 23A.
AS
Pulse width £ 300µs; duty cycle £ 2%.
39
A
160
£ 23A, di/dt £ 97A/µs, V
showing the
p-n junction diode.
DD
£ V
(BR)DSS
,
D
G
S
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IRL3302
1000
VGS
VGS
TOP
15V
TOP 10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
3.0V
BOTTOM 2.5V
BOTTOM
2.5V
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
2.5V
20µs PULSE WIDTH
T = 25 C
J
°
1000
VGS
VGS
TOP
15V
TOP 10V
12V
8.0V
10V
6.0V
8.0V
6.0V
4.0V
4.0V
3.0V
3.0V
BOTTOM 2.5V
BOTTOM
2.5V
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
2.5V
20µs PULSE WIDTH
T = 150 C
J
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
39A
°
T = 25 C
J
100
T = 150 C
J
10
D
I , Drain-to-Source Current (A)
V = 15V
DS
1
2 3 4 5 6 7 8
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
°
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
V =
GS
°
4.5V
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRL3302
2400
2000
1600
1200
800
C, Capacitance (pF)
400
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I =
23A
D
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
V = 16V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
°
T = 150 C
J
10
°
T = 25 C
SD
J
V = 0 V
GS
SD
I , Reverse Drain Current (A)
1
0.5 1.0 1.5 2.0
V ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10us
100
100us
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
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IRL3302
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
300
TOP
250
200
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
I
D
10A
15A
23A
°
thJC
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRL3302
)
0.022
( W )
0.021
0.020
0.019
0.018
VGS = 4.5V
VGS = 7.0V
0.017
DS (on)
0.016
R , Drain-to-Source On Resistance
0 10 20 30 40
I , Drain Current (A)
D
0.020
0.019
0.018
0.017
0.016
I = 39A
D
Drain-to-Source On Resistance ( W )
0.015
DS(on),
R
0.014
45678910
V , Gate-to-Source Voltage (V
GS
Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
A
Page 7
Package Outline
A
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
IRL3302
LEAD ASSIGNMENTS
1 - G ATE
2 - D RA IN
3 - SOURCE
4 - D RA IN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CO N T R OLL ING D IME N S IO N : IN C H 4 H E A T S IN K & L E AD M EA S U R EM E NT S DO N O T INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT C OD E 9B1 M
0.93 (.037)
3X
0.69 (.027)
0.36 (.014) M B A M
INT ERN AT IO NA L
R E C T IF IE R
LOGO
AS SEMBLY
LOT COD E
IRF1010
9246
9B 1M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
PART NUMBER
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 11/97
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