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PD- 91792
IRL3215
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
V
= 150V
DSS
R
S
= 0.166 Ω
DS(on)
ID = 12A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
TO-220AB
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.5 A
I
DM
PD @TC = 25°C Power Dissipation 80 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 48
Linear Derating Factor 0.53 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 130 mJ
Avalanche Current 7.2 A
Repetitive Avalanche Energy 8.0 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.9
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRL3215
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.20 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.166 VGS = 10V, ID = 7.2A
Static Drain-to-Source On-Resistance
––– ––– 0.184 Ω VGS = 5.0V, ID = 7.2A
––– ––– 0.208 VGS = 4.0V, ID = 6A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 7.2A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
VDS = 150V, VGS = 0V
µA
VGS = 16V
nA
Total Gate Charge ––– ––– 35 ID = 7.2A
Gate-to-Source Charge ––– ––– 4.1 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.4 ––– VDD = 75V
Rise Time ––– 45 –––
Turn-Off Delay Time ––– 38 ––– RG = 12Ω, VGS = 5.0V
ns
ID = 7.2A
Fall Time ––– 36 ––– RD = 10.2Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 775 ––– VGS = 0V
Output Capacitance ––– 140 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
12
48
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 7.2A, VGS = 0V
Reverse Recovery Time ––– 160 24 0 ns TJ = 25°C, IF = 7.2A
Reverse RecoveryCharge ––– 810 1210 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
D
G
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 4.9mH
J
= 7.2A. (See Figure 12)
AS
≤ 7.2A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
,
TJ ≤ 175°C
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IRL3215
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
10
VGS
VGS
TOP 15V
TOP
15V
10V
10V
8.0V
5V
7.0V
4.5V
6.0V
3.5V
5.5V
3V
5.0V
2.75V
BOTTOM
4.5V
BOTTOM 2.50V
20µs PULSE WIDTH
T = 25 C
V , Drain-to-Source Voltage (V)
DS
T = 25 C
J
2.5V
J
°
°
10
1
VGS
VGS
TOP 15V
TOP
15V
10V
10V
8.0V
7.0V
4.5V
6.0V
3.5V
5.5V
5.0V
2.75V
BOTTOM
4.5V
BOTTOM 2.50V
5V
3V
2.5V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 175 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
I =
D
12A
T = 175 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
2.0 3.0 4.0 5.0 6.0 7.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRL3215
2500
2000
C
1500
C
1000
C, Capacitance (pF)
C
500
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
iss
oss
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
15
I =
7.2 A
D
V = 120V
DS
V = 75V
DS
V = 30V
DS
10
5
GS
V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
100
10
°
T = 175 C
J
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
°
T = 25 C
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
D
I , Drain Current (A)I , Drain Current (A)
1
°
= 25 C
C
T T= 175 C
Single Pulse
0.1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
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IRL3215
R
D.U.T.
D
+
V
DD
-
12
9
R
V
DS
V
GS
G
10V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
I , Drain Current (A)
3
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
thJC
D = 0.50
1
0.20
0.10
1 2
P
DM
t
1
t
2
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL3215
A
15V
DRIVER
+
-
R
20V
V
DS
G
t
L
D.U.T
I
AS
Ω
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
300
TOP
250
200
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
2.9A
5.1A
7.2A
°
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
Fig 13b. Gate Charge Test Circuit
DS
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IRL3215
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
Driver Gate Drive
P.W.
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
-
VGS=10V
V
DD
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFETS
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IRL3215
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GA T E
2 - DR A IN
3 - SO U R C E
4 - DR A IN
0.93 (.037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO N IN G & T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O - 2 2 0 A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
0.69 (.027)
0.36 (.01 4) M B A M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
W IT H A SSEMBLY
LOT CODE 9 B1M
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 3/99
8 www.irf.com
INTERN A TION A L
RE CTIFIER
L OGO
ASSEMBLY
LOT CODE
I RF1010
9246
9B 1 M
PART NUMB ER
DATE CODE
(YYWW)
YY = YE AR
WW = WEEK
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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