Page 1
PD 9.1675B
PRELIMINARY
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
2
Pak is a surface mount power package capable
The D
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
2
Pak is suitable for high current applications because
D
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
IRL3202S
HEXFET® Power MOSFET
D
V
= 20V
DSS
G
R
S
2
D Pak
DS(on)
ID = 48A
= 0.016W
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 48
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 30 A
I
DM
PD @TC = 25°C Power Dissipation 69 W
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 190
Linear Derating Factor 0.56 W/°C
Gate-to-Source Voltage ± 10 V
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy 270 mJ
Avalanche Current 29 A
Repetitive Avalanche Energy 6.9 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
qJC
R
q JA
Junction-to-Case ––– 1.8
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
°C
11/18/97
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IRL3202S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
DV
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/DT
Breakdown Voltage Temp. Coefficient ––– 0.029 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.019 VGS = 4.5V, ID = 29A
––– ––– 0.016
W
VGS = 7.0V, ID = 29A
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 28 ––– ––– S VDS = 16V, ID = 29A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
VDS = 20V, VGS = 0V
µA
VGS = 10V
nA
Total Gate Charge ––– ––– 43 ID = 29A
Gate-to-Source Charge ––– ––– 12 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– ––– 1 3 VGS = 4.5V, See Fig. 6
Turn-On Delay Time ––– 9.8 ––– VDD = 10V
Rise Time ––– 100 –––
Turn-Off Delay Time ––– 63 ––– RG = 9.5W, VGS = 4.5V
ns
ID = 29A
Fall Time ––– 82 ––– RD = 0.3W,
Between lead,
Internal Source Inductance ––– 7.5 –––
nH
and center of die contact
Input Capacitance ––– 2000 ––– VGS = 0V
Output Capacitance – –– 800 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 290 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25W, I
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
48
190
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
Reverse Recovery Time ––– 68 100 ns TJ = 25°C, IF = 29A
Reverse Recovery Charge ––– 130 190 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
£ 29A, di/dt £ 63A/µs, V
SD
DD
£ V
TJ £ 150°C
= 25°C, L = 0.64mH
J
= 29A.
AS
Pulse width £ 300µs; duty cycle £ 2%.
Uses IRL3202 data and test conditions
(BR)DSS
D
G
S
,
Page 3
IRL3202S
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM
BOTTOM
1.75V
2.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM
2.00V
BOTTOM
1.75V
2.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
48A
°
T = 25 C
J
100
T = 150 C
J
10
D
I , Drain-to-Source Current (A)
V = 15V
DS
1
2 3 4 5
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
°
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
V =
GS
°
4.5V
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRL3202S
3500
3000
2500
2000
1500
C, Capacitance (pF)
1000
500
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I =
29A
D
V = 16V
DS
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60 70
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
SD
I , Reverse Drain Current (A)
1
0.2 0.8 1.4 2.0 2.6
°
T = 150 C
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
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IRL3202S
)
50
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
600
TOP
500
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
I
D
13A
18A
29A
°
thJC
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRL3202S
)
0.018
0.025
( W )
D
VGS = 4.5V
VGS = 7.0V
0.020
I = 48A
0.015
D
Drain-to-Source On Resistance ( W )
DS(on),
R
0.010
0.0 2.0 4.0 6.0 8.0
V , Gate-to-Source Voltage (V
GS
0.016
0.014
0.012
DS (on)
0.010
R , Drain-to-Source On Resistance
0 10 20 30 40 50 60
I , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
A
Page 7
A
D2Pak Package Outline
IRL3202S
10.54 (.415)
1.40 (.055)
MAX .
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTES:
1 D IME NSIO N S AFTER SOL D ER DIP .
2 DIMENS IONING & TOLE RA N C ING PER A N S I Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010) M B A M
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
1 - G AT E
2 - D RAIN
3 - S OURCE
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
Part Marking Information
D2Pak
INTERNATIO NAL
R ECTIF IE R
L O GO
A S SEMBLY
L O T CODE
F530S
9246
9 B 1 M
PART NUMB ER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
Page 8
IRL3202S
)
)
)
)
)
(
)
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
4.10 (.16 1)
3.90 (.15 3)
1.60 (.06 3)
1.50 (.05 9)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
FEED DIRECTION
13.50 (.532
12.80 (.504
330.00
(14.173)
MAX.
NOTES :
1. CO M FOR M S TO EIA- 4 18 .
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11.60 (.457)
11.40 (.449)
1.75 (.069 )
1.25 (.049 )
16.10 (.634)
15.90 (.626)
15.42 (.609 )
15.22 (.601 )
27.40 (1.079
23.90 (.941
4
26.40 (1.039)
24.40 (.961)
3
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
60.00 (2.362
M IN .
30.40
1.197
MAX .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 11/97
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