Datasheet irl3202 Datasheet

PD 9.1695A

TO-220AB

PRELIMINARY

IRL3202

HEXFET® Power MOSFET

l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching

G

Description

These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.

The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO­220 contribute to its wide acceptance throughout the
industry.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 48
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 30 A
I

DM

PD @TC = 25°C Power Dissipation 69 W

V

GS

V

GSM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  190

Linear Derating Factor 0.56 W/°C
Gate-to-Source Voltage ± 10 V
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy 270 mJ
Avalanche Current 29 A
Repetitive Avalanche Energy 6.9 mJ

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

D

V

= 20V

DSS

R

S

DS(on)

ID = 48A

= 0.016W

°C

Thermal Resistance

R

qJC

R

q CS

R

qJA

Junction-to-Case ––– 1.8
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

Parameter Typ. Max. Units

11/18/97

IRL3202

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

DV

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA

/DT

Breakdown Voltage Temp. Coefficient ––– 0.029 –– – V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.019 VGS = 4.5V, ID = 29A 
––– ––– 0.016

W

VGS = 7.0V, ID = 29A 
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 28 ––– ––– S VDS = 16V, ID = 29A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V

VDS = 20V, VGS = 0V

µA

VGS = 10V

nA

Total Gate Charge ––– ––– 43 ID = 29A
Gate-to-Source Charge ––– ––– 12 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– – –– 13 VGS = 4.5V, See Fig. 6 
Turn-On Delay Time ––– 9.8 ––– VDD = 10V
Rise Time ––– 100 –––
Turn-Off Delay Time ––– 63 – –– RG = 9.5W, VGS = 4.5V

ns

ID = 29A

Fall Time ––– 82 ––– RD = 0.3W, 

Internal Drain Inductance ––– 4.5 –––

Internal Source Inductance ––– 7.5 –––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 2000 ––– VGS = 0V
Output Capacitance ––– 8 00 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 290 ––– ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25W, I

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V 
Reverse Recovery Time ––– 68 100 ns TJ = 25°C, IF = 29A
Reverse Recovery Charge ––– 130 190 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 I

£ 29A, di/dt £ 63A/µs, V

SD

TJ £ 150°C

= 25°C, L = 0.64mH

J

= 29A.

AS

 Pulse width £ 300µs; duty cycle £ 2%.

48

190

showing the

A

p-n junction diode.

£ V

DD

(BR)DSS

D

G

S



,

IRL3202

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

VGS

TOP

7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

2.00V

BOTTOM

BOTTOM

1.75V

2.0V

20µs PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

BOTTOM

2.00V

BOTTOM

1.75V

2.0V

20µs PULSE WIDTH
T = 150 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

48A

°

T = 25 C

J

100

T = 150 C

J

10

D

I , Drain-to-Source Current (A)

V = 15V

DS

1

2 3 4 5

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

°

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

V =

GS

°

4.5V

Fig 4. Normalized On-Resistance

Vs. Temperature

IRL3202

3500

3000

2500

2000

1500

C, Capacitance (pF)

1000

500

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

15

I =

29A

D

V = 16V

DS

12

9

6

3

GS

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40 50 60 70

Q , Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100

10

SD

I , Reverse Drain Current (A)

1

0.2 0.8 1.4 2.0 2.6

°

T = 150 C

J

°

T = 25 C

J

V ,Source-to-Drain Voltage (V)

SD

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

10

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C
Single Pulse

1

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

IRL3202

)

50

40

30

20

D

I , Drain Current (A)

10

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

600

TOP

500

400

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature( C)

J

BOTTOM

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

I

D
13A
18A
29A

°

thJC

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRL3202

)

0.018

0.025

( W )

D

VGS = 4.5V

VGS = 7.0V

0.020

I = 48A

0.015

D

Drain-to-Source On Resistance ( W )

DS(on),

R

0.010

0.0 2.0 4.0 6.0 8.0

V , Gate-to-Source V oltage (V

GS

0.016

0.014

0.012

DS (on)

0.010

R , Drain-to-Source On Resistance

0 10 20 30 40 50 60

I , Drain Current (A)

Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage

A

Package Outline

A

TO-220AB Outline

Dimensions are shown in millimeters (inches)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

IRL3202

LEAD ASSIGNMENTS
1 - G A T E
2 - D R AIN
3 - SOURCE
4 - D R AIN

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CO N T R O L L ING D IM EN S IO N : IN C H 4 H E ATS IN K & LE A D M EA S UR E ME N TS D O NO T INCLUDE BURRS.

2X

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1M

0.93 (.037)

3X

0.69 (.027)

0.36 (.014) M B A M

INT ERN AT ION AL
R E C T IF IE R
LOGO

AS SEMBLY
LOT C ODE

2.92 (.115)

2.64 (.104)

IRF1010

9246

9B 1M

3X

0.55 (.022)

0.46 (.018)

PART NUMBER

DATE CODE
(YYW W)
YY = YEAR
WW = WEEK

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http://www.irf.com/ Data and specifications subject to change without notice. 11/97