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PRELIMINARY
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l Copackaged HEXFET
and Schottky Diode
l Generation 5 Technology
l Logic Level Gate Drive
l Minimize Circuit Inductance
l Ideal For Synchronous Regulator Application
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
®
Power MOSFET
PD 9.1660
IRL3103D2
D
V
= 30V
DSS
R
G
S
TO-220AB
DS(on)
ID = 54A
= 0.014Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 54
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 34 A
I
DM
PD @TA = 25°C Power Dissipation 2.0 W
PD @TC = 25°C Power Dissipation 70 W
V
GS
T
J
T
STG
Pulsed Drain Current 220
Linear Derating Factor 0.56 W/°C
Gate-to-Source Voltage ± 16 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.8
Junction-to-Ambient ––– 62 °C/W
°C
7/16/97
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IRL3103D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
iss
Drain-to-Source Breakdown Voltage 30 –– – –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.014 VGS = 10V, ID = 32A
––– ––– 0.019
Ω
VGS = 4.5V, ID = 27A
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 23 ––– ––– S VDS = 25V, ID = 34A
Drain-to-Source Leakage Current
––– ––– 0.25
––– ––– 35 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
VDS = 30V, VGS = 0V
mA
VGS = 16V
nA
Total Gate Charge ––– ––– 44 ID = 32A
Gate-to-Source Charge ––– ––– 14 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– – –– 24 VGS = 4.5V, See Fig. 6
Turn-On Delay Time ––– 9.0 ––– VDD = 15V
Rise Time ––– 210 –––
Turn-Off Delay Time ––– 20 ––– RG = 3.4Ω, VGS =4.5V
ns
ID = 34A
Fall Time ––– 54 ––– RD = 0.43 Ω,
Internal Drain Inductance
––– –––
Internal Source Inductance 7.5–––
4.5
–––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2300 ––– VGS = 0V
Output Capacitance ––– 1100 ––– VDS = 25V
Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz, See Fig. 5
pF
Input Capacitance ––– 3500 ––– VGS = 0V, VDS = 0V
D
G
S
Body Diode & Schottky Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IF (AV) ( Schottky) MOSFET symbol
I
SM
V
SD1
V
SD2
t
rr
Q
rr
t
on
Pulsed Source Current integral reverse
(Body Diode)
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V
Diode Forward Voltage ––– ––– 0.6 V TJ = 25°C, IS = 3.0A, VGS = 0V
Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 32A
Reverse Recovery Charge ––– 47 71 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL3103 data and test conditions
5.0
––––––
220
showing the
A
p-n junction and Schottky diode.
D
G
S
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IRL3103D2
)
A
)
A
)
)
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Drain -to -S o u r ce Vo ltage (V
DS
J
Fig 1. Typical Output Characteristics
30
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
1
0.1 1 10 1 00
V , Drain-to-Source Voltage (V
DS
J
Fig 2. Typical Output Characteristics
30
VGS
TO P 10V
8.0V
6.0V
4.0V
2.0V
BOTTOM 0.0V
20
VGS
TO P 10V
8.0V
6.0V
0.0V
C
4.0V
2.0V
BOTTOM 0.0V
A
10
, Source-to-Drain Current ( A )
S
I
0
0.0 0.2 0.4 0.6 0.8 1.0
V , Drain-to-Source Voltage (V
DS
20µs PULSE WIDTH
T = 25°C
Fig 3. Typical Reverse Output Characteristics
20
10
, Source-to-Drain Current ( A )
S
I
0
0.0 0.2 0.4 0.6 0.8
V , Drain-to-Source Voltage (V
DS
0.0V
20µs PULSE WIDTH
T = 150°C
C
Fig 4. Typical Reverse Output Characteristics
A
Page 4
IRL3103D2
A
)
5000
4000
3000
2000
C, Capacitance ( pF )
1000
0
1 10 100
V = 0 V , f = 1MH z
GS
C = C + C , C SH O R TED
iss gs gd d s
C = C
rss gd
C = C + C
os s d s gd
C
iss
C
oss
C
rss
V , Drain-to -So urc e Vo ltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
60
15
I =D32A
V = 24V
DS
V = 15V
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
A
0
0 20 40 60 80
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
50
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 7. Maximum Drain Current Vs.
Case Temperature
T = 25°C
GS
J
T = 150°C
J
V = 15V
DS
20µs PULSE WIDTH
100
10
D
I , Drain-to-Source Current (A)
1
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
Fig 8. Typical Transfer Characteristics
Page 5
IRL3103D2
10
2.0
1.5
1.0
I =
D
54A
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 9. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
th JC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Th e rmal R e s po n se (Z )
0.01
0.01
SINGLE PU LSE
(THERMAL RESPONSE)
0.00001 0.0001 0.001 0.01 0.1 1
t , Rec tangular Pulse Duration (sec)
1
No tes:
1. D uty fac tor D = t / t
2. Pe a k T = P x Z + T
DM
J
P
DM
t
1
t
2
2
1
thJ C
C
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
Page 6
IRL3103D2
A
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GA T E
2 - DR A IN
3 - SO U RCE
4 - DR A IN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM EN S IO NIN G & T O L E RA NC IN G PE R A NS I Y1 4.5 M , 19 82. 3 OU T L IN E C ON FO R M S T O JE DE C O U TL IN E T O -2 2 0 AB .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
EXAMPLE : THIS IS AN IRF1010
W IT H A SS EM BL Y
W IT H A SS EM BL Y
LO T CO DE 9B 1 M
LO T CO DE 9B 1 M
0.93 (.037)
3X
0.69 (.027)
0.36 (.01 4) M B A M
INTERN A TION A L
INTERN A TION A L
RE CTIFIER
RE CTIFIER
L OG O
L OG O
ASSEMBLY
ASSEMBLY
LO T C ODE
LO T C ODE
I RF1010
I RF1010
9246
9B 1 M
9B 1 M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
9246
PART NUMB ER
PART NUMB ER
DATE CODE
DATE CODE
(YYWW)
(YYWW)
YY = YEAR
YY = YEAR
WW = WEEK
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 6/97
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