Page 1
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
®
Power MOSFETs from International
PD - 91337
IRL3103
HEXFET® Power MOSFET
D
G
S
TO-220AB
V
R
DS(on)
= 30V
DSS
= 12mΩ
ID = 64A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A
I
DM
PD @TC = 25°C Power Dissipation 94 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 220
Linear Derating Factor 0.63 W/°C
Gate-to-Source Voltage ± 16 V
Avalanche Current 34 A
Repetitive Avalanche Energy 22 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 1.6
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRL3103
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Drain-to-Source Breakdown Voltage 30 –– – – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 12 VGS = 10V, ID = 34A
––– ––– 16 VGS = 4.5V, ID = 28A
mΩ
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 22 ––– ––– S VDS = 25V, ID = 34A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 30V, VGS = 0V
µA
nA
VGS = -16V
Total Gate Charge ––– ––– 3 3 ID = 34A
Gate-to-Source Charge ––– ––– 5.9 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– –– – 17 VGS = 4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.9 ––– VDD = 15V
Rise Time ––– 120 ––– ID = 34A
Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω
Fall Time ––– 9.1 ––– VGS = 4.5V, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1650 ––– VGS = 0V
Output Capacitance ––– 650 ––– VDS = 25V
Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1320130 mJ I
= 34A, L = 0.22mH
AS
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
64
220
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 34A, VGS = 0V
Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 34A
Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
= 25°C, L = 220µH
J
= 34A, VGS=10V (See Figure 12)
AS
≤ 34A, di/dt ≤ 120A/µs, V
DD
≤ V
(BR)DSS
,
operation outside rated limits.
This is a calculated value limited to T
= 175°C .
J
D
G
S
D
G
S
2 www.irf.com
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IRL3103
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
56A
I =
D
°
T = 25 C
J
100
10
D
I , Drain-to-Source Current (A)
1
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
T = 175 C
J
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRL3103
3000
2500
2000
1500
1000
C, Capacitance (pF)
500
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I =
34A
D
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
V = 24V
DS
V = 15V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
13
100
10
1
SD
I , Reverse Drain Current (A)
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4
Fig 7. Typical Source-Drain Diode
°
T = 175 C
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
100
10
, Drain-to-Source Current (A)
D
I
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µsec
1msec
10msec
Forward Voltage
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Page 5
IRL3103
70
60
50
40
30
D
20
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL3103
A
15V
DRIVER
+
-
V
DD
R
V
20V
V
DS
G
GS
L
D.U.T
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
240
TOP
200
160
120
80
40
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
I
°
D
14A
24A
34A
50KΩ
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
Fig 13b. Gate Charge Test Circuit
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
6 www.irf.com
+
V
DS
-
Page 7
IRL3103
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 14. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
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Page 8
IRL3103
A
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RC E
4 - DRA IN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y1 4. 5 M , 1 9 8 2 . 3 OU T L IN E C O N F O R M S T O JE D E C O U T L IN E TO -2 20 A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
W IT H A SSEMBLY
LOT CODE 9B1 M
This product has been designed and qualified for the industrial market.
0.93 (.037)
3X
0.69 (.027)
0.36 (.01 4) M B A M
INTERN A TION A L
RE CTIFIER
L OGO
ASSEMBLY
LOT CODE
Data and specifications subject to change without notice.
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
PART NUMB ER
I RF1010
9246
9B 1 M
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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