Page 1
PD - 91376B
IRL2910S/L
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 190
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 16 V
Single Pulse Avalanche Energy 520 mJ
Avalanche Current 29 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 0.75
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
D
S
2
D Pak
V
R
DS(on)
TO-262
= 100V
DSS
= 0.026Ω
ID = 55A
°C/W
°C
5/13/98
Page 2
IRL2910S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.026 VGS = 10V, ID = 29A
Static Drain-to-Source On-Resistance
––– ––– 0.030 Ω VGS = 5.0V, ID = 29A
––– ––– 0.040 VGS = 4.0V, ID = 24A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 28 – –– ––– S VDS = 50V, ID = 29A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
A
nA
VGS = 16V
Total Gate Charge ––– ––– 1 4 0 ID = 29A
Gate-to-Source Charge ––– ––– 20 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 81 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 100 ––– ID = 29A
Turn-Off Delay Time ––– 49 ––– RG = 1.4Ω, VGS = 5.0V
ns
Fall Time ––– 55 ––– RD = 1.7Ω, See Fig. 10
Internal Source Inductance 7.5
––– –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 3700 –– – VGS = 0V
Output Capacitance ––– 630 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
190
55
showing the
A
p-n junction diode.
Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
Reverse Recovery Time ––– 240 350 ns TJ = 25°C, IF = 29A
Reverse RecoveryCharge – –– 1.8 2.7 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25V, starting TJ = 25°C, L = 1.2mH
= 29A. (See Figure 12)
AS
≤ 29A, di/dt ≤ 490A/µs, V
DD
≤ V
(BR)DSS
Uses IRL2910 data and test conditions
,
D
G
S
Page 3
IRL2910S/L
)
A
)
A
A
A
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Dra in-t o- S o u rc e Voltage (V
DS
J
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Dra in-t o- S o u rc e Voltage (V
DS
J
Fig 2. Typical Output Characteristics
3.0
I = 48 A
D
T = 25°C
100
10
D
I , Dra in-to -S o urc e C u rre nt (A )
1
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V , Ga te-to -So u rce V o ltage (V)
GS
J
T = 175°C
J
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(N orma l i z ed)
1.0
0.5
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10 V
GS
Page 4
IRL2910S/L
)
A
)
A
A
)
A
g
6000
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
iss gs gd d s
C = C
rss gd
C
C = C + C
iss
oss ds gd
C
oss
C
rss
V , Drai n-to - S o ur c e V o ltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I = 29 A
V , G a te -to -S o u rc e Vo lta g e (V)
12
GS
D
9
6
3
V = 8 0V
DS
V = 5 0V
DS
V = 2 0 V
DS
FOR TEST CIRCU IT
0
0 40 80 120 160 200
Q , T o ta l Ga te C h a rge (nC
G
SE E F IG U R E 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OP ER A T IO N IN T H IS A R E A L IMITED
BY R
DS(on)
100
T = 175°C
J
T = 25°C
J
SD
I , R ev er se D r a in Curre n t (A )
10
0.4 0.8 1.2 1.6 2.0
V , Source-to-Drain Voltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10
D
I , D rain C u rr ent ( A )
T = 25 °C
C
T = 17 5 °C
J
le Pul s e
Sin
1
1 10 100 1000
V , Dra in-t o- S o u rc e V o ltage (V
DS
10µs
100µs
1ms
10ms
Fig 8. Maximum Safe Operating Area
Page 5
IRL2910S/L
A
50
40
30
20
D
I , Drain Current (Amps)
10
0
25 50 75 100 125 150 175
T , C as e T em p e rature ( °C )
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
thJC
1
D = 0.50
0.20
0.10
0.1
0.05
Thermal Response (Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SIN G L E PU L S E
(THERMAL RESPONSE )
t , Rectangular Pulse Duration (sec)
1
Note s:
1. Du ty fac tor D = t / t
2. Pea k T = P x Z + T
J
DM
P
DM
t
1
t
2
2
1
C
th JC
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
Page 6
IRL2910S/L
A
)
A
15V
DRIVER
+
-
R
20V
V
DS
G
t
L
D.U.T
I
AS
Ω
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
V
DD
1400
I
TO P 12 A
1200
1000
800
600
400
200
AS
V = 25 V
E , S ing le Pul se A va la n ch e E n erg y (mJ )
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
20A
BOTT OM 29 A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
Fig 12b. Unclamped Inductive Waveforms
Q
G
5.0 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
Fig 13b. Gate Charge Test Circuit
DS
Page 7
IRL2910S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
Driver Gate Drive
P.W.
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
-
VGS=10V
V
DD
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
Page 8
IRL2910S/L
A
D2Pak Package Outline
10.54 (.415)
1.40 (.055)
MAX.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.2 5 ( .0 10) M B A M
Part Marking Information
D2Pak
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASSIGNMENTS
1 - G ATE
2 - D RAIN
3 - S OU RCE
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
RE CTIFIE R
LO G O
A S SEMBLY
LO T CO D E
F530S
9246
9 B 1 M
PART NUM B ER
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
Page 9
Package Outline
TO-262 Outline
IRL2910S/L
Part Marking Information
TO-262
Page 10
IRL2910S/L
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED D IRECTION
1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
FEED D IRECTION
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
NOTES :
1. COMF O R M S T O EIA-418.
2. C O N TR O LLIN G DIMENSIO N : M ILLIM ETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
15.42 (.609)
15.22 (.601)
27.40 (1.079)
23.90 (.941)
4
26.40 (1.039)
24.40 (.961)
3
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
60.00 (2.362)
MIN .
30.40 (1.197)
MAX .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
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