Page 1
PD 9.1375
PRELIMINARY
IRL2910
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design for which HEXFET
Power MOSFETs are well known, provides the designer with an
extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately
50 watts. The low thermal resistance and low package cost of the
TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 48
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 34 A
I
DM
PD @TC = 25°C Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 7.4 V/ns
T
J
T
STG
Pulsed Drain Current 190
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 520 mJ
Avalanche Current 29 A
Repetitive Avalanche Energy 15 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
V
R
DS(on)
= 100V
DSS
= 0.026Ω
ID = 48A
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.0 °C/W
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62 °C/W
Parameter Typ. Max. Units
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IRL2910
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.026 VGS = 10V, ID = 29A
Static Drain-to-Source On-Resistance
––– ––– 0.030 Ω VGS = 5.0V, ID = 29A
––– ––– 0.040 VGS = 4.0V, ID = 24A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 28 ––– ––– S VDS = 50V, ID = 29A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 100V , VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
µA
nA
VGS = 20V
Total Gate Charge ––– ––– 140 ID = 29A
Gate-to-Source Charge ––– ––– 20 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 81 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 100 ––– ID = 29A
Turn-Off Delay Time ––– 49 ––– RG = 1.4Ω, VGS = 5.0V
ns
Fall Time ––– 55 ––– RD = 1.7Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3700 ––– VGS = 0V
Output Capacitance ––– 630 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
Reverse Recovery Time ––– 240 350 ns TJ = 25°C, IF = 29A
Reverse Recovery Charge ––– 1.8 2.7 µC di/dt = 100A/µs
I
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 1.2mH
= 29A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
48
A
190
≤ 29A, di/dt ≤ 490A/µs, V
showing the
p-n junction diode.
DD
≤ V
(BR)DSS
,
Page 3
IRL2910
A
A
A
A
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics,
TJ = 25oC
1000
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics,
TJ = 175oC
3.0
I = 48A
D
T = 25°C
100
10
D
I , Drain-to-Source Current (A)
1
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V , Gate-to-Source Voltage (V)
GS
J
T = 175°C
J
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10V
GS
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IRL2910
A
A
A
A
6000
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C
C = C + C
iss
oss ds gd
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I = 29A
D
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
V = 80V
DS
V = 50V
DS
V = 20V
DS
FOR TEST CIRCUIT
0
0 40 80 120 160 200
Q , Total Gate Charge (nC)
G
SEE FIGUR E 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
T = 175°C
J
T = 25°C
J
SD
I , Reverse Drain Current (A)
10
0.4 0.8 1.2 1.6 2.0
V , Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Forward Voltage
V = 0V
GS
100
10
D
I , Drain Current (A)
T = 25°C
C
T = 175°C
J
Single Pulse
1
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
10µs
100µs
1ms
10ms
Fig 8. Maximum Safe Operating Area
Page 5
IRL2910
A
R
D.U.T.
D
V
DD
V
50
R
40
DS
V
GS
G
5.0V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
D
I , Drain Current (Amps)
10
0
25 50 75 100 125 150 175
T , Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Case Temperature
10
thJC
1
D = 0.50
0.20
0.10
0.1
0.05
Thermal Response (Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THE RMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
N otes:
1. D uty fac tor D = t / t
2. P eak T = P x Z + T
DM
J
P
DM
t
1
t
2
2
1
th JC
C
A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRL2910
A
A
15V
DRIVER
+
-
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
1400
1200
1000
800
V
DD
600
400
200
AS
V = 25V
E , Single Pulse Avalanche Energy (mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
I
TOP 12A
D
20A
BOTTOM 29A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
5.0 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
Page 7
IRL2910
Peak Diode Recovery dv/dt Test Circuit
D.U.T
R
G
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• dv/dt controlled by R
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
G
V
DD
*
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Page 8
IRL2910
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASURE MENTS DO NOT INCLUDE BURRS.
10.29 (.405)
1 2 3
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1M
3.78 (.149)
3.54 (.139)
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
0.93 (.037)
3X
0.69 (.027)
0.36 (.014) M B A M
4.69 (.185)
- A -
4.20 (.165)
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
IRF1010
9246
9B 1M
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
0.55 (.022)
3X
0.46 (.018)
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: ++ 65 221 8371
Data and specifications subject to change without notice. 11/95
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