Page 1
PD - 91375B
IRL2910
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
V
R
DS(on)
= 100V
DSS
= 0.026Ω
ID = 55A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 190
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 16 V
Single Pulse Avalanche Energy 520 mJ
Avalanche Current 29 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75 °C/W
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62 °C/W
Parameter Typ. Max. Units
5/13/98
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IRL2910
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.026 VGS = 10V, ID = 29A
Static Drain-to-Source On-Resistance
––– ––– 0.030 Ω VGS = 5.0V, ID = 29A
––– ––– 0.040 VGS = 4.0V, ID = 24A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 28 ––– ––– S VDS = 50V, ID = 29A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
µA
nA
VGS = 16V
Total Gate Charge ––– –– – 140 ID = 29A
Gate-to-Source Charge ––– ––– 20 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 81 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 100 ––– ID = 29A
Turn-Off Delay Time ––– 49 ––– RG = 1.4Ω, VGS = 5.0V
ns
Fall Time ––– 55 ––– RD = 1.7Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3700 ––– VGS = 0V
Output Capacitance ––– 630 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
Reverse Recovery Time ––– 240 350 ns TJ = 25°C, IF = 29A
Reverse RecoveryCharge –– – 1.8 2. 7 µ C di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 1.2mH
= 29A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
55
A
190
≤ 29A, di/dt ≤ 490A/µs, V
showing the
p-n junction diode.
DD
≤ V
(BR)DSS
,
D
G
S
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IRL2910
)
A
)
A
A
A
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Dra in-t o- S o u rc e Voltage (V
DS
J
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Dra in-t o- S o u rc e Voltage (V
DS
J
Fig 2. Typical Output Characteristics
3.0
I = 48 A
D
T = 25°C
100
10
D
I , Dra in-to -S o urc e C u rre nt (A )
1
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V , Gate-to-Source Voltage (V)
GS
J
T = 175°C
J
V = 50 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(N orma l i z ed)
1.0
0.5
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10 V
GS
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IRL2910
)
A
)
A
A
)
A
g
6000
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
iss gs gd d s
C = C
rss gd
C
C = C + C
iss
oss ds gd
C
oss
C
rss
V , Drai n-to - S o ur c e V o ltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I = 29 A
V , G a te-to -S o u rc e Vo ltag e (V)
12
GS
D
9
6
3
V = 80 V
DS
V = 50 V
DS
V = 20 V
DS
FOR TEST CIRCUIT
0
0 40 80 120 160 200
Q , T ota l Ga te C h a rge (nC
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OP ER A T IO N IN T H IS A R E A L IMITED
BY R
DS(on)
100
T = 175°C
J
T = 25°C
J
SD
I , R ev er se D r a in Curre n t (A )
10
0.4 0.8 1.2 1.6 2.0
V , Source-to-Drain Voltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10
D
I , Drain Current (A)
T = 25 °C
C
T = 17 5 °C
J
Sin
le Pul s e
1
1 10 100 1000
V , Dra in-t o- S o u rc e Voltage (V
DS
10µs
100µs
1ms
10ms
Fig 8. Maximum Safe Operating Area
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IRL2910
60
50
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
V
DS
V
GS
R
G
D
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
0.20
0.1
0.10
P
1 2
DM
t
1
t
2
0.05
Thermal Response (Z )
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRL2910
A
)
A
15V
DRIVER
+
-
R
20V
V
DS
G
t
L
D.U.T
I
AS
Ω
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
1400
I
TO P 12 A
1200
1000
800
600
400
200
AS
V = 25 V
E , S ing le Pul se A va la n ch e E n erg y (mJ )
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
20A
BOTT OM 29 A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
5.0 V
Q
GS
V
G
Q
GD
Charge
Current Regulator
Same Type as D.U.T.
12V
.2µF
V
GS
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
+
V
DS
-
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IRL2910
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
Driver Gate Drive
P.W.
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
-
VGS=10V
V
DD
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
Page 8
IRL2910
A
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIME NSIONING & TOL ER ANCIN G P ER ANSI Y14.5 M , 1982 . 3 O U TLINE CONF O RMS TO JE D E C OUTLINE TO -2 20A B .
2 CON T R OLLIN G DIM ENS ION : INC H 4 HE ATSINK & LEAD MEASU R E M E N TS DO N OT INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMB LY
W ITH A SSEMBL Y
LOT C OD E 9 B1 M
LOT COD E 9 B1M
0.93 (.037)
3X
0.69 (.027)
0.36 (.014) M B A M
INTERNATIONAL
INTERN A TION A L
RE CTI F IER
RE CTIFIER
LO GO
L OGO
ASSEMBLY
ASSEMBLY
LO T CODE
LOT CODE
IRF1010
I RF1010
9246
9246
9B 1M
9B 1M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
PART NUMBER
PART NUMB ER
DATE CODE
DATE CODE
(YYW W)
(YYWW)
YY = YEAR
YY = YEAR
WW = WEEK
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
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