Datasheet irl2703s Datasheet

PD - 9.1360

PRELIMINARY

l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

2

The D

PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The

2

PAK is suitable for high current applications because of

D its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

IRL2703S

HEXFET® Power MOSFET

D

V

= 30V

DSS

DS(on)

ID = 24A

= 0.04Ω

G

S

2

D Pak

R

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 24 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 17 A I

DM

PD @TC = 25°C Power Dissipation 45 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  3.5 V/ns T

J

T

STG

Pulsed Drain Current   96

Linear Derating Factor 0.30 W/°C Gate-to-Source Voltage ±16 V Single Pulse Avalanche Energy  77 mJ Avalanche Current 14 A Repetitive Avalanche Energy 4.5 mJ

Operating Junction and -55 to + 175 Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case –––– –––– 3.3 Junction-to-Ambient (PCB Mount,steady-state)** –––– –––– 40

°C/W

11/18/96

IRL2703S

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.030 – –– V/° C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.040 VGS = 10V, ID = 14A  ––– ––– 0.060 VGS = 4.5V, ID = 12A 

Ω

Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA Forward Transconductance 6.4 ––– ––– S VDS = 25V, ID = 14A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V

––– ––– 25 VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C

µA

nA

Total Gate Charge ––– –– – 15 ID = 14A Gate-to-Source Charge –– – ––– 4.6 nC VDS = 24V Gate-to-Drain ("Miller") Charge ––– ––– 9.3 VGS = 4.5V, See Fig. 6 and 13  Turn-On Delay Time ––– 8.5 ––– VDD = 15V Rise Time ––– 140 –– – ID = 14A Turn-Off Delay Time ––– 12 ––– RG = 12Ω, VGS = 4.5V

ns

Fall Time ––– 20 ––– RD = 1.0Ω, See Fig. 10 

Between lead,

Internal Source Inductance ––– 7.5 –––

nH

and center of die contact Input Capacitance ––– 450 ––– VGS = 0V Output Capacitance ––– 210 – –– pF VDS = 25V Reverse Transfer Capacitance ––– 11 0 ––– ƒ = 1.0MHz, See Fig. 5

Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

––– ––– 24

A

––– ––– 96

Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 14A, VGS = 0V  Reverse Recovery Time ––– 65 97 ns TJ = 25°C, IF = 14A Reverse RecoveryCharge ––– 140 210 nC di/dt = 100A/µs Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



D

G

S

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

= 15V, starting TJ = 25°C, L = 570µH

DD

RG = 25Ω, I

= 14A. (See Figure 12)

AS

 I

≤ 14A, di/dt ≤ 140A/µs, V

SD

DD

≤ V

TJ ≤ 175°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Uses IRL2703 data and test conditions.

** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

(BR)DSS

,

IRL2703S

1000

VGS TOP 15V 12V 10V

8.0V

6.0V

4.0V

3.0V

100

BOTT OM 2.5V

10

1

D

I , Drain-to-Source Current (A)

2.5V

0.1

0.1 1 10 100

V , Dra in-to-So urc e V olta ge (V )

DS

20µs PULSE WIDTH T = 25°C

J

Fig 1. Typical Output Characteristics

100

T = 25°C

J

1000

VGS TO P 15V 12V 10V

8.0V

6.0V

4.0V

3.0V

100

BOTTOM 2.5V

10

1

D

I , Drain- to-S o urce C u rrent ( A)

2.5V

20µs PULSE W IDTH T = 175°C

A

0.1

0.1 1 10 100

V , Drain-to-S ource Voltage (V)

DS

J

A

Fig 2. Typical Output Characteristics

2.0

I = 24A

D

T = 175°C

J

10

1

D

I , Dra in-to -Sou rce Current (A)

0.1 2345678910

V , Ga te-to-So urce Voltage (V)

GS

V = 15V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(No rm alized)

0.5

DS(on)

R , Dra in-to -S ourc e On Re s istan ce

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Ju nc tio n T em peratu r e (° C)

J

V = 10V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature

IRL2703S

1000

800

600

400

C, C apac itance (pF)

200

0

1 10 100

V = 0V, f = 1MHz

GS

C = C + C , C SH ORTED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rs s

V , Dr ain-to-Source Volt a ge (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

15

I = 1 4 A

V , Gate-to-Source Voltage (V )

12

9

6

3

GS

D

V = 24V

DS

V = 15V

DS

FOR TEST CIRCUIT

A

0

0 4 8 12 16 20

Q , Total Ga te C harg e (nC)

G

SE E FIGUR E 13

A

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

O PERA T ION IN THIS A RE A LIMITED BY R

DS(on)

T = 175°C

J

T = 25° C

10

SD

I , Rev ers e Dr ain C u rren t (A)

1

0.4 0.8 1.2 1.6 2.0 2.4

V , Source-to-Drain Voltage (V )

J

V = 0V

SD

Fig 7. Typical Source-Drain Diode

Forward Voltage

GS

100

10

D

I , Drain Cu rren t (A )

T = 25°C

C

T = 175° C

J

A

Single Pulse

1

1 10 100

V , Drain-to-So urc e Vo ltag e (V)

DS

10µs

100µs

1ms

10ms

A

Fig 8. Maximum Safe Operating Area

IRL2703S

+

-

24

20

16

12

8

D

I , Drain C urrent (Am p s)

4

0

25 50 75 100 125 150 175

T , Case Te m pe rature (°C)

C

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

D.U.T.

D

V

DD

V

DS

V

GS

R

G

5.0V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

A

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

D = 0.50

thJC

1

0.20

0.10

0.05

0.02

0.1

Thermal Response (Z )

0.01

0.01 SINGL E P UL S E

(THERMAL RESPONSE)

No tes :

1. D u ty fa c tor D = t / t

2. P e a k T = P x Z + T

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

JDM thJC

P

DM

12

t

1

t

2

C

A

IRL2703S

D.U.T.

I

AS

L

0.01Ω

+

V

DD

-

R

5.0 V

V

DS

G

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

V

DD

V

DS

I

AS

160

120

80

40

AS

V = 15V

E , Single Pulse A valanche E nergy (m J)

DD

0

25 50 75 100 125 150 175

Starting T , Junction Temperature (°C)

J

I TOP 5.7A

9.9A B OTTOM 14A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

A

Fig 12b. Unclamped Inductive Waveforms

Q

G

4.5 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

-

D

Fig 13b. Gate Charge Test Circuit

DS

IRL2703S

+

-

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

controlled by Duty Factor "D"

• I

SD

• D.U.T. - Device Under Test

Period

-

D =



G

P.W.

Period

+

V

DD

VGS=10V

*

Reverse Recovery Current

Re-Applied Voltage

D.U.T. ISDWaveform

Body Diode Forward

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-Channel HEXFETS

Current

di/dt

Diode Recovery

dv/dt

V

DD

I

SD

IRL2703S

Package Outline

D2Pak Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

1.40 (.055) M AX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTES: 1 DIMEN SIONS A F T ER SOLDER DIP. 2 DIME NSIONING & TO LE RA NCING PER ANSI Y14.5M, 1982 3 CONTROLLING DIMENSION: INCH. 4 D IMENSIONS ARE SH O W N IN MILLIMETERS (INCHE S) . 5 HEATSINK & LEAD DIMENSIO NS DO NOT INCLUDE BURRS.

10.29 (.405)

- A 4

21 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

2X

0.69 (.027)

0.25 ( .010) M A M B

Part Marking Information

D2Pak

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055 )

1.14 (.045 )

10.16 (.400) R E F .

4

A

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) R E F .

E XAMP L E : THIS IS A N IRF 5 30 S WITH A S SE M B LY L O T CO D E 9B 1 M

INTERNATIONAL RECTIFIER LO G O

ASSEMBLY LOT CODE

F530S

9246

9B 1 M

PART NUM BER

A

DATE CODE (YYWW ) YY = YEAR WW = WEEK

Tape & Reel Information

D2Pak

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

IRL2703S

0.368 (.0145)

0.342 (.0135)

FEED DIRE CTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRE CTION

13.50 (.532)

12.80 (.504)

330.0 0 (14 .173 ) MAX.

NOTES :

1. CO MFORMS TO EIA-418.

2. CO NTROLLING DIMENSION: MILLIMETER.

3. DIMENSIO N ME ASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

24.30 (.957)

23.90 (.941)

4.7 2 (.136)

4.5 2 (.178)

60.00 (2.362) M IN.

30.40 (1.197) M A X .

4

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http://www.irf.com/ Data and specifications subject to change without notice. 11/96