Datasheet irl2505 Datasheet

PD - 91325C

IRL2505

l Logic-Level Gate Drive l Advanced Process Technology

l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

G

HEXFET® Power MOSFET

D

R

DS(on)

V

DSS

= 55V

= 0.008Ω

ID = 104A

S

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 is universally preferred for all commercialIndustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A I

DM

PD @TC = 25°C Power Dissipation 200 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J

T

STG

Pulsed Drain Current  360

Linear Derating Factor 1.3 W/°C Gate-to-Source Voltage ± 16 V Single Pulse Avalanche Energy 500 mJ Avalanche Current  54 A Repetitive Avalanche Energy 20 mJ

Operating Junction and 55 to + 175 Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.75 Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

Juction-to-Ambient

––– 62

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IRL2505

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA

J

= 10V, ID = 54A 

GS

= 5.0V, ID = 54A 

GS

Static Drain-to-Source On-Resistance

––– ––– 0.008 V ––– ––– 0.010 Ω V ––– ––– 0.013 VGS = 4.0V, ID = 45A 

Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA Forward Transconductance 59 ––– ––– SVDS = 25V, ID = 54A

Drain-to-Source Leakage Current

––– ––– 25 V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V

µA

nA

= 55V, VGS = 0V

DS

VGS = 16V

Total Gate Charge ––– ––– 130 ID = 54A Gate-to-Source Charge ––– ––– 25 nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– ––– 67 VGS = 5.0V, See Fig. 6 and 13  Turn-On Delay Time ––– 12 ––– VDD = 28V Rise Time ––– 160 ––– ID = 54A Turn-Off Delay Time ––– 43 ––– RG = 1.3Ω, VGS = 5.0V

ns

Fall Time ––– 84 ––– RD = 0.50Ω, See Fig. 10 

Internal Source Inductance 7.5

––– –––

Between lead,

nH

and center of die contact Input Capacitance ––– 5000 ––– VGS = 0V Output Capacitance ––– 1100 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 390 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

104

360

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V  Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 54A Reverse Recovery Charge ––– 650 970 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

= 25V, starting TJ = 25°C, L = 240µH

DD

RG = 25Ω, I

 I

≤ 54A, di/dt ≤ 230A/µs, V

SD

= 54A. (See Figure 12)

AS

DD

≤ V

(BR)DSS

,

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Calculated continuous current based on maximum allowable

junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4

TJ ≤ 175°C

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D

S

IRL2505

)

A

)

A

1000

VGS TOP 15V 12V 10V

8.0V

6.0V

4.0V

3.0V BOTTOM 2.5V

100

10

D

I , D rain -to -S o u rc e Cur ren t ( A )

2.5V 20µs PULSE WIDTH

T = 25°C

1

0.1 1 10 100

V , Dra in- to -S o u rc e Vo ltage (V

DS

J

Fig 1. Typical Output Characteristics

1000

VGS TOP 15V 1 2V 1 0V 8 .0V 6 .0V 4 .0V 3 .0V BOTTOM 2.5V

100

10

D

I , Dra in -to -S o urc e C u rr ent ( A )

2.5V

20µs PULSE WIDTH T = 175°C

1

0.1 1 10 10 0

V , Dra in- to -S o u rc e Vo ltage (V

DS

J

Fig 2. Typical Output Characteristics

2.5

90A

I =



D

T = 25°C

J

T = 175°C

100

10

D

I , D ra in-to-S o urc e Cu rren t (A)

1

2.5 3.5 4.5 5.5 6.5 7.5

V , Ga te -to-S ou rce Vo ltage (V)

GS

J

V = 2 5 V

DS

20µs PULSE W IDTH

Fig 3. Typical Transfer Characteristics

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

5V



GS

°

Vs. Temperature

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IRL2505

)

A

g

)

A

)

A

)

A

g

10000

8000

6000

4000

V = 0V, f = 1MH z

GS

C = C + C , C S H O R T E D

iss

C = C C = C + C

C

iss

C

oss

s gd ds

rss

d

oss ds

d

C, C apa citance (p F)

2000

C

rss

0

1 10 100

V , Dra in- to -S o u rc e Volt age (V

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

15

I = 54 A

D

V = 44 V

DS

V = 28 V

DS

V , G a te -to -S o u rc e Vo ltag e ( V )

12

GS

9

6

3

FOR TE ST CIRCU IT

0

0 40 80 120 160 200

Q , T o ta l Ga te Cha rge (nC

G

SE E F IG U R E 13

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OP ER A T IO N IN T HIS A RE A L IMITED BY R

DS(on)

10µs

100

100µs

100

T = 175°C

J

T = 25°C

J

SD

I , R ev er se D r a in C u rre n t (A )

10

0.4 0.8 1.2 1.6 2.0 2.4 2.8

V , Source-to-Drain Voltage (V

SD

V = 0V

Fig 7. Typical Source-Drain Diode

GS

10

D

I , D rain C u rr ent ( A )

T = 25 °C

C

T = 17 5 °C

J

le Puls e

Sin

1

1 10 100

V , Dra in- to -S o u rc e Vo ltage (V

DS

Fig 8. Maximum Safe Operating Area

1ms

10ms

Forward Voltage

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120

100

IRL2505



LIMITED BY PACKAGE

80

60

V

GS

R

G

5.0V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D.U.T.

+

V

DD

-

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

D = 0.50

thJC

0.20

0.1

0.10

0.05

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE



(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Fig 10b. Switching Time Waveforms

P

DM

t



Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

1 2

J DM thJC C

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRL2505

A

)

D.U.T.

I

AS

L

0.01Ω

+

V

DD

-

R

5.0 V

V

DS

G

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

V

DD

V

DS

I

AS

Fig 12b. Unclamped Inductive Waveforms

1200

1000

800

600

400

200

AS

V = 25 V

E , S ing le Pul s e A v a lan c he E n erg y (mJ )

DD

0

25 50 75 100 125 150 175

Starting T , Junction Temperature (°C

J

I TO P 22A 38 A BOTTOM 54A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

5.0 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

-

D

6 www.irf.com

V

DS

IRL2505

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P.W.

Period

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

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IRL2505

)

(

)

A

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415

2.87 (.113

2.62 (.103

15.24 (.600

14.84 (.584

14.09 (.555

13.47 (.530

1.40 (.055

3X

1.15 (.045

2.54 (.100

NOTES: 1 DIM E N S IO N IN G & T O L E R A N C I N G P E R A N S I Y 1 4 .5 M , 1 9 82 . 3 OU T L IN E C O N F O R M S T O JE D E C OU T LIN E T O -2 2 0 A B . 2 CO NTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

10.29 (.405

4

1 2 3

3.78 (.149

3.54 (.139

- A -

6.47

.255

6.10 (.240

1.15 (.045 M IN

4.06 (.160

3.55 (.140

0.93 (.037

3X

0.69 (.027

0.36 (.014) M B A M

TO-220AB Part Marking Information

EXAMPLE : THIS IS AN IRF1010 W ITH A SSEM BL Y LOT CO DE 9 B1M

INTERN ATIONAL RE CTIFIER L OGO

ASSEMBLY LOT COD E

4.69 (.185

4.20 (.165

- B -

1.32 (.052

1.22 (.048

0.55 (.022

3X

0.46 (.018

2.92 (.115

2.64 (.104

IRF1010

9246

9B 1 M

LEAD ASSIGNMENTS 1 - GAT E 2 - DRA IN 3 - SOU RC E 4 - DRA IN

PART NUM BER

DATE CODE (YYWW) YY = YEAR WW = WEEK

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/01

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