Datasheet IRL1104S-L Datasheet (IOR)

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PD -91840

PRELIMINARY

l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

2

Pak is a surface mount power package capable of

The D accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1104L) is available for lowprofile applications.

2

Pak is

G

IRL1104S/L

HEXFET® Power MOSFET

2

D Pa k

D

S

V

DSS

R

DS(on)

= 0.008Ω

ID = 104A

TO-262

= 40V

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A I

DM

PD @TA = 25°C Power Dissipation 2.4 W PD @TC = 25°C Power Dissipation 167 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J

T

STG

Pulsed Drain Current  416

Linear Derating Factor 1.1 W/°C Gate-to-Source Voltage ±16 V Single Pulse Avalanche Energy 340 mJ Avalanche Current 62 A Repetitive Avalanche Energy 17 m J

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 0.9 Junction-to-Ambient(PCB Mounted,steady-state)** ––– 62

°C/W

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10/28/98

IRL1104S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID =1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.008 VGS = 10V, ID = 62A  ––– ––– 0.012

W

VGS = 4.5V, ID = 52A  Gate Threshold Voltage 1.0 ––– V VDS = VGS, ID = 250µA Forward Transconductance 53 ––– ––– S VDS = 25V, ID = 62A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100

VDS =40V, VGS = 0V

µA

nA

VGS = -16V Total Gate Charge –– – –– – 68 ID =62A Gate-to-Source Charge ––– ––– 24 nC VDS = 32V Gate-to-Drain ("Miller") Charge ––– ––– 34 VGS = 4.5V, See Fig. 6 and 13  Turn-On Delay Time ––– 18 ––– VDD = 20V Rise Time ––– 257 ––– ID =54A Turn-Off Delay Time ––– 32 ––– RG = 3.6Ω , VGS = 4.5V Fall Time ––– 64 ––– RD = 0.4Ω, See Fig. 10 

Internal Source Inductance 7.5

––– –––

Between lead,

nH

and center of die contact Input Capacitance ––– 3445 ––– VGS = 0V Output Capacitance ––– 1065 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

104

416

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =62A, VGS = 0V  Reverse Recovery Time ––– 84 126 ns TJ = 25°C, IF =62A Reverse Recovery Charge ––– 223 335 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

= 15V, starting TJ = 25°C, L = 0.18mH

DD

RG = 25Ω, I

 I

≤ 62A, di/dt ≤ 217A/µs, V

SD

TJ ≤ 175°C

= 62A. (See Figure 12)

AS

DD

≤ V

(BR)DSS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.  Uses IRL1104 data and test conditions.

 Calculated continuous current based on maximum allowable

junction temperature;for recommended current-handling of the

,

package refer to Design Tip # 93-4

** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

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D

S

IRL1104S/L

1000

100

10

TOP

BOTTOM

VGS 15V 10V

7.0V

5.5V

4.5V

4.0V

3.5V

2.7V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V 10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM

2.7V

20µs PULSE WIDTH T = 175 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

2.5

I =

D

104A

°

T = 25 C

J

T = 175 C

J

100

10

D

I , Drain-to-Source Current (A)

V = 50V

25

DS

1

2.0 4.0 6.0 8.0 10.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRL1104S/L

6000

5000

4000

3000

2000

C, Capacitance (pF)

1000

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C + C

C

iss

oss

rss

C SHORTED C C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

10

I =

62 A

D

V = 32V

DS

V = 20V

8

6

4

2

GS

V , Gate-to-Source Voltage (V)

0

0 20 40 60 80

Q , Total Gate Charge (nC)

G

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

10

°

T = 25 C

J

1

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

1000

100

D

I , Drain Current (A)I , Drain Current (A)

10

°

= 25 C

C

T T= 175 C Single Pulse

1

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

10us

100us

1ms

10ms

°

T = 175 C

J

Forward Voltage

4 www.irf.com

IRL1104S/L

120

LIMITED BY PACKAGE

100

80

60

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

R

V

DS

V

GS

R

G

D

D.U.T.

4.5V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

-

DD

D = 0.50

thJC

0.20

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRL1104S/L

A

15V

DRIVER

+

-

V

DD

R

V

G

5

10V

DS

L

D.U.T

I

AS

Ω

t

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

800

TOP

600

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

I

D 25A 44A 62A

°

50KΩ

Q

G

4.5 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T .

3mA

I

G

Current Sampling Resistors

I

+

V

DS

-

D

6 www.irf.com

IRL1104S/L

Peak Diode Recovery dv/dt Test Circuit

D.U.T

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance Current Transformer

-

+



-



-

+



R

G

Driver Gate Drive

P.W.

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period

P.W.

+

-

VGS=10V

V

DD

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

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IRL1104S/L

A

D2Pak Package Details

10.54 (.415)

1.40 (.055) MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S: 1 DIM ENSIONS AFTER SOLDER DIP. 2 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A 2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10 ) M B A M

Part Marking

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS 1 - G ATE 2 - D RA IN 3 - S OURCE

10.16 (.400) REF .

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) REF .

MINIMUM RECOM MENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082) 2X

2.54 (.100) 2X

INTERNATIONAL RE CTIFIER L O G O

A S SEMBLY LO T CO D E

F530S

9246

9 B 1M

PART NUM B ER

DATE CODE (YYW W ) YY = YEAR WW = WEEK

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TO-262 Package Details

IRL1104S/L

Part Marking

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IRL1104S/L

D2Pak Tape and Reel

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

FEED D IRECTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COM FO R M S TO E IA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HU B.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

26.4 0 (1.0 39)

24.40 (.961 )

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362) MIN.

30.40 (1.197) MAX .

4

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http://www.irf.com/ Data and specifications subject to change without notice. 10/98

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