Page 1
Bulletin I27135 rev. F 10/02
IRKU/V71, 91 SERIES
ADD-A-pakTM GEN V Power ModulesTHYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
isolating voltage
RMS
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters IRKU/V71 IRKU/V91 Units
I
@ 85°C 75 95 A
T(AV)
I
T(RMS)
I
@ 50Hz 1665 1785 A
TSM
@ 60Hz 1740 1870 A
I2t @ 50Hz 13.86 15.91 KA2s
@ 60Hz 12.56 14.52 KA2s
I2√t 138.6 159.1 KA2√s
V
range 400 to 1600 V
RRM
T
STG
T
J
115 150 A
- 40 to 125
- 40 to125
o
C
o
C
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al20
DBC insulator
3
Heatsink grounded
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
75 A
95 A
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
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Page 2
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
V
, maximum V
RRM
Type number
Voltage repetitive non-repetitive peak off-state voltage, I
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
IRKU/V71, 91 08 800 900 80 0 15
12 1200 1300 1200
16 1600 1700 1600
On-state Conduction
Parameters IRKU/V71 IRKU/V91 Units Conditions
I
Max. average on-state 75 95 180o conduction, half sine wave,
T(AV)
current T
Max. RMS on-state 115 150 DC
I
T(RMS
)
current
@T
Max. peak, one cycle 1665 1785 t=10ms No voltage
I
TSM
C
non-repetitive on-state 1740 1870 t=8.3ms reapplied
current 1400 1500 t=10ms 100% V
2
I
t Max. I2t for fusing 13.86 15.91 t=10ms No voltage
2
I
√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied
Max. value of threshold 0.82 0.80 Low level (3)
V
T(TO)
voltage (2) 0.85 0.85 High level (4)
r
Max. value of on-state 3.00 2.40 Low level (3)
t
slope resistance (2) 2.90 2.25 High level (4)
V
Max. peak on-state I
TM
voltage I
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V
of rise of turned on I
current t
IHMax. holding current 200
I
Max. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
L
< I < π x I
AV
x √t
. (2) Average power = V
x
AV
(1) I2t for time tx = I2√t
(3) 16.7% x π x I
80 75 °C
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms T
1940 2100 t=8.3ms no voltage reapplied
12.56 14.52 t=8.3ms reapplied
9.80 11.25 t=10ms 100% V
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms T
15.60 18.30 t=8.3ms no voltage reapplied
1.59 1.58 V
150 A/µs
x I
(4) I > π x I
AV
T(TO)
, maximum V
RSM
A
A
KA2s
V
mΩ
mA
+ r
T(AV)
t
, max. repetitive I
DRM
= 85oC
C
= 25oC,
J
= 25oC,
J
= π x I
TM
T(AV)
= π x I
FM
F(AV)
=π x I
TM
< 0.5 µs, tp > 6 µs
r
= 25oC, anode supply = 6V,
T
J
, I
T(AV)
g
resistive load, gate open circuit
T(RMS)
2
)
x (I
RRM
RRM
DRM
= 500mA,
Sinusoidal
half wave,
Initial T
Initial T
TJ = TJ max
T
= TJ max
J
TJ = 25°C
,
= TJ max.
J
= TJ max.
J
RRM
DRM
2
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Page 3
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
Triggering
Parameters IRKU/V71 IRKU/V91 Units Conditions
P
Max. peak gate power 12 12
GM
P
Max. average gate power 3.0 3.0
G(AV)
I
Max. peak gate current 3.0 3.0 A
GM
-V
Max. peak negative
GM
gate voltage
Max. gate voltage
V
GT
required to trigger
Max. gate current
I
GT
required to trigger
VGDMax. gate voltage
that will not trigger
I
Max. gate current
GD
that will not trigger
10
4.0 T
2.5 T
1.7 T
270 T
150 mA T
80 T
0.25 V
6mA
Blocking
Parameters IRKU/V71, 91 Units Conditions
I
Max. peak reverse and
RRM
I
off-state leakage current
DRM
at V
, V
RRM
DRM
V
RMS isolation voltage V
INS
dv/dt Max. critical rate of rise T
of off-state voltage (5) gate open circuit
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU91/16AS90.
15 mA T
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
500 V/µs
Thermal and Mechanical Specifications
Parameters IRK.71 IRK.91 Units Conditions
T
Junction operating
J
temperature range
Storage temper. range - 40 to 125
T
stg
Max. internal thermal
R
thJC
resistance, junction 0.165 0.135 Per module, DC operation
to case
Typical thermal resistance
R
thCS
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Devices Units
180
Sine half wave conduction Rect. wave conduction
o
120
o
IRKU/V71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
IRKU/V91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12
- 40 to 125
0.1
5
when devices operate at different conduction angles than DC)
thJC
o
90
o
60
o
30
W
V
°C
K/W
Nm
180o120
= - 40°C
J
= 25°C
J
= 125°C
J
= - 40°C
J
= 25°C
J
= 125°C
J
T
= 125oC,
J
rated V
= 125oC,
T
J
rated V
= 125 oC, gate open circuit
J
= 125oC, linear to 0.67 V
J
DRM
DRM
applied
applied
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
DRM
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
o
o
90
o
60
o
30
,
°C/W
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Page 4
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
Ordering Information Table
Device Code
IRK U 91 / 16 A S90
1
2 3
1 - Module type
2 - Circuit configuration (See Circuit Configuration table)
3 - Current code * *
4 - Voltage code (See Voltage Ratings table)
5 - A : Gen V
6 - dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
IRK.92 types
With no auxiliary cathode
5
4
6
* * Available with no auxiliary cathode.
To specify change: 91 to 92
71 to 72
e.g. : IRKU92/16A etc.
Dimensions are in millimeters and [inches]
IRKU
G1
(4) (5)
(1)
+
-
(2)
-
(3)
K1
K2
G2
(7)
(6)
IRKV
G1
(4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900
4
(1)
-
+
(2)
+
(3)
K2
G2
K1
(7)
(6)
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Page 5
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
130
120
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
110
100
90
30°
80
70
Maximum Allowable Case Temperature (°C)
0 1020304050607080
Conduction Angl e
60°
90°
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
120
180°
100
120°
90°
60°
80
60
40
20
0
Maximum Average On-state Power Loss (W)
0 1020304050607080
30°
RMS Limit
Conduction Angle
IRK.71.. Series
Per Jun ction
T = 125°C
J
Aver age On-state Current (A)
120°
180°
130
120
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
110
Conduction Period
100
90
30°
60°
80
70
Maximum Allowable Case Temperature (°C)
0 20 40 60 80 100 120
90°
120°
180°
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
140
DC
180°
120
120°
100
90°
60°
30°
80
RMS Limit
60
40
20
0
Maximum Average On-state Power Loss (W)
0 20 40 60 80 100 120
Conduction Period
IRK.71.. Series
Per Junction
T = 125°C
J
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
1600
At Any Rated Load Condition And With
1500
1400
1300
1200
1100
1000
Peak Half Sine Wave On-state Current (A)
Number Of Equa l Amplitu de Half Cy cle Cu rr ent Pul ses (N)
Rated V Applied Following Surge.
RRM
900
IRK.71 .. Series
800
Per Junction
700
110100
Initial T = 125°C
J
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
1800
Maximum Non Repetitive Surge Current
Versus Pul se Train Duration. Control
Of Conduction May Not Be Maintained.
1600
1400
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
1200
1000
800
IRK.7 1 .. Series
Per Junction
Peak Half Sine Wave On-state Current (A)
600
0.01 0.1 1
Pulse Tr a in Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
DC
J
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Page 6
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
600
500
400
300
200
100
Maximum Total Power Loss (W)
0
0 20 40 60 80 100 120 140 160 180
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
180°
(Sine)
180°
(Rect)
2 x IRK.71.. Series
Single Phase Bridge
Connected
T = 125°C
J
Total Output Current (A)
R
t
h
S
A
= 0
.1 K
/
W
0
.
2
0
.
3
0
.
5
1
K
2
K
- D
K
/
K
/
W
K
/
/
W
/
W
e
W
W
lta
R
0 20 40 60 80 100 120 140
Maximum Al lowable Ambient Temperature (°C)
600
500
400
I
o
300
200
100
Maximum Total Power Loss (W)
0
0 50 100 150 200 250 300
Total Output Cu rrent (A)
130
120
IRK.91.. Series
R (DC) = 0.27 K/W
thJC
110
Conduction Angle
100
90
30°
60°
90°
80
70
Maximum Allowable Ca se Temperature (°C)
0 20 40 60 80 100
Average On-state Current (A)
Fig. 9 - Current Ratings Characteristics
R
t
h
S
A
=
0
.
1
60°
(Rect)
3 x IRK.71.. Series
6-Pulse Midpoint
0
.
2
K
/
0
.
3
K
/
0
.
5
K
1
K
/
W
K
/
W
W
W
/
W
-
Connection Bridge
T = 125°C
J
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
130
120
110
100
90
120°
180°
80
70
Maximum Allowable Cas e Temperature (°C)
0 20 40 60 80 100 120 140 160
Fig. 10 - Current Ratings Characteristics
D
e
l
t
a
R
IRK.91.. Series
R (DC) = 0.27 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
Average On-state Current (A)
DC
6
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Page 7
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
140
180°
120
100
80
120°
90°
60°
30°
RMS Limit
60
40
20
0
Maximum Average On-state Power Loss (W)
020406080100
Conduction Angle
IRK.91.. Series
Per Junc tion
T = 125°C
J
Average On-state Current (A)
Fig. 11 - On-state Power Loss Characteristics
1600
At Any Rated Load Condition And With
1500
Rated V Applied Following Surge.
RRM
1400
1300
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1200
1100
1000
900
IRK.9 1 .. Series
800
Per Junction
Peak Half Sine Wave On-state Current (A)
700
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 13 - Maximum Non-Repetitive Surge Current
180
DC
160
180°
120°
140
90°
60°
120
30°
100
RMS Limit
80
60
40
20
0
Maximum Average On-state Power Loss (W)
0 20 40 60 80 100 120 140 160
Conduction Period
IRK.91.. Series
Per Jun c tion
T = 125°C
J
Average On-state Current (A)
Fig. 12 - On-state Power Loss Characteristics
1800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
1600
1400
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
1200
1000
800
IRK.91 .. S e ries
Per Junction
Peak Half Sine Wave On-state Current (A)
600
0.01 0.1 1
Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
J
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600
180°
500
400
(Sine)
180°
(Rect)
300
200
2 x IRK.91.. Serie s
100
Maximum Total Po wer Loss (W)
0
0 40 80 120 160 200
Single Phase B ridge
Connected
T = 125°C
J
Total Output Current (A)
R
t
h
S
A
=
0
.
1
K
/
0
.
2
K
0
.
3
K
0
.
5
K
1
K
/
2
K
/
W
-
/
W
/
W
/
W
W
W
D
e
l
t
a
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Fig. 15 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
R
7
Page 8
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
1000
100
700
R
t
h
S
A
600
500
I
o
(Rect)
400
300
200
3 x IRK.91.. Series
6-Pulse Midpoint
100
Maximum Total Power Loss (W)
0
0 40 80 120 160 200 240 280 320 360
Connection Bridge
T = 125°C
J
Total Output Current (A)
60°
=
0
.
1
K
/
W
0
.
2
K
/
0
.
3
K
/
0
.
5
K
/
1
K
/
W
-
D
e
l
W
W
W
t
a
R
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-state Power Loss Characteristics
1000
100
T = 25°C
T = 25°C
10
J
T = 125°C
J
10
J
T = 125°C
J
Instantaneous On-state Curr ent ( A)
1
0.511.522.533.54
IRK.71.. Series
Per Junctio n
Instantaneous On-state Voltage (V)
Instantaneous On-state C urrent (A)
1
0.511.522.533.5
Instantaneous On-state Voltage (V)
IRK.91.. Series
Per Junction
Fig. 18 - On-state Voltage Drop CharacteristicsFig. 17 - On-state Voltage Drop Characteristics
700
600
IRK.71.. Series
IRK.91.. Series
T = 125 °C
J
I = 200 A
TM
100 A
500
400
50 A
300
200
100
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of On-state Current - di/dt (A/µs)
20 A
10 A
Fig. 19 - Recovery Charge Characteristics
8
140
120
IRK.71.. Series
IRK.91.. Series
T = 125 °C
J
I = 200 A
100
80
60
40
20
Maximum Reverse Recovery Current - Irr (A)
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 20 - Recovery Current Characteristics
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TM
100 A
50 A
20 A
10 A
Page 9
Bulletin I27135 rev. F 10/02
1
Steady State Value:
R = 0.33 K/W
thJC
Transient Thermal Impedance Z ( K/ W )
Instantaneous Gate Voltage (V)
thJC
R = 0.27 K/W
thJC
(DC Operation)
(a)
TJ = -40 °C
IRK.71.. Series
IRK.91.. Series
Per Junction
Characteristics
thJC
(1) PGM = 200 W, tp = 300 µ s
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(4) (3) (2) (1)
Frequency Limited by PG(AV)
0.1
0.01
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 21 - Thermal Impedance Z
100
Rectangular gate pulse
a)Recommended load line for
rated di/d t: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recomme nde d load line fo r
<= 30% rated di/dt: 1 5 V, 40 ohms
10
tr = 1 µs , tp >= 6 µs
(b)
TJ = 25 °C
TJ = 125 °C
1
VGD
IGD
0.1
0.001 0.01 0.1 1 10 100 1000
IRK.71../.91.. Series
Instantaneous Gate Current (A)
IRKU/V71, 91 Series
Fig. 22 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
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