Page 1
Bulletin I27097 rev. A 09/97
IRK.F102.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
Industrial standard package
UL E78996 approved
isolating voltage
RMS
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters IRK.F102.. Units
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I2t @ 50Hz 40.8 KA2s
2
I
t
q
t
rr
V
T
@ 50Hz 2850 A
@ 60Hz 3000 A
@ 60Hz 37.2 KA
√t 408 KA2√s
/ V
DRM
RRM
range - 40 to 125
J
105 A
90 °C
233 A
2
s
20 and 25 µs
2µs
up to 1200 V
o
C
INT-A-pakä Power Modules
105 A
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
RRM/VDRM
Type number Code peak reverse voltage repetitive peak rev. voltage @ T
IRK.F102.. Series 30
08 800 800
12 1200 1200
Current Carrying Capacity
, maximum repetitive V
, maximum non- I
RSM
RRM/IDRM
VVmA
max.
= 125°C
J
I
Frequency f Units
180oel
TM
180oel
I
TM
100µs
I
TM
50Hz 210 340 320 500 1590 2210 A
400Hz 265 415 395 625 975 1390 A
2500Hz 180 280 320 490 390 570 A
5000Hz 145 230 260 380 260 380 A
10000Hz 110 175 190 275 - - A
Recovery voltage Vr 50 50 50 50 50 50 V
Voltage before turn-on Vd 80% V
DRM
80% V
DRM
80% V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 90 60 90 60 90 60 °C
Equivalent values for RC circuit 47 Ω / 0.22 µF 47 Ω / 0.22 µF 47 Ω / 0.22 µF
On-state Conduction
Parameter IRK.F102.. Units Conditions
Maximum average on-state current 105 A 180° conduction, half sine wave
I
T(AV)
@ Case temperature 90 °C
Maximum RMS current 233 A TC = 90°C, as AC switch
I
T(RMS)
I
Maximum peak, one-cycle, 2850 A t = 10ms No voltage
TSM
non-repetitive surge current 3000 t = 8.3ms reapplied
2400 t = 10ms 100% V
2500 t = 8.3ms reapplied Sinusoidal half wave,
2
t Maximum I2t for fusing 40.8 KA2s t = 10ms No voltage Initial TJ = 125°C
I
37.2 t = 8.3ms reapplied
28.8 t = 10ms 100% V
26.3 t = 8.3ms reapplied
2
√t Maximum I2√t for fusing 408 KA2√s t = 0 to 10ms, no voltage reapplied
I
Low level value of threshold voltage 1.12 V (16.7% x π x I
V
T(TO)1
High level value of threshold voltage 1.28 (I > π x I
V
T(TO)2
r
Low level value of on-state slope resistance 2.43 mW (16.7% x π x I
t1
r
High level value of on-state slope resistance 2.00 (I > π x I
t2
Maximum on-state voltage drop 1.97 V Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse
V
TM
I
Maximum holding current 600 mA T
H
I
Typical latching current 1000 mA T
L
T(AV)
T(AV)
= 25°C, IT > 30 A
J
= 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
J
2
RRM
RRM
< I < π x I
T(AV)
), TJ = TJ max.
< I < π x I
T(AV)
), TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Switching
Parameter IRK.F102.. Units Conditions
di/dt Maximum non-repetitive rate of rise 800 A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% V
TJ = 25°C
Maximum recovery time 2 µs ITM = 350A, di/dt = -25A/µs, V
t
rr
t
Maximum turn-off time K J ITM = 350A, TJ = 125°C, di/dt = -25A/µs,
q
20 25 µs V
Blocking
Parameter IRK.F102.. Units Conditions
dv/dt Maximum critical rate of rise of off-state 1000 V/µs T
voltage
RMS isolation voltage 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s
V
INS
Maximum peak reverse and off-state 30 mA TJ = 125°C, rated V
I
RRM
leakage current
I
DRM
Triggering
Parameter IRK.F102.. Units Conditions
P
Maximum peak gate power 40 W f = 50 Hz, d% = 50
GM
Maximum peak average gate power 2 W TJ = 125°C, f = 50Hz, d% = 50
P
G(AV)
Maximum peak positive gate current 5 A TJ = 125°C, tp < 5ms
I
GM
Maximum peak negative gate voltage 5 V
- V
GM
Max. DC gate current required to trigger 20 0 m A TJ = 25°C, Vak 12V, Ra = 6
I
GT
DC gate voltage required to trigger 3 V
V
GT
DC gate current not to trigger 20 m A TJ = 125°C, rated V
I
GD
DC gate voltage not to trigger 0.25 V
V
GD
= 50V, dv/dt = 400V/µs linear to 80% V
R
= 125°C., exponential to = 67% V
J
DRM/VRRM
applied
DRM
= 50V, TJ = 25°C
R
DRM
applied
DRM
DRM
Thermal and Mechanical Specifications
Parameter IRK.F102.. Units Conditions
TJMax. junction operating temperature range - 40 to 125 °C
T
Max. storage temperature range - 40 to 150
stg
R
Max. thermal resistance, junction to 0.25 K/W Per junction, DC operation
thJC
case
Max. thermal resistance, case to 0.035 K/W Mounting surface flat and greased
R
thC-hs
heatsink Per module
T Mounting torque ± 10% IAP to heatsink 4 - 6 (35 - 53) Nm
busbar to IAP 4 - 6 (35 - 53) (lb*in)
wt Approximate weight 500 (17.8) g (oz)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
∆R
Conduction
thJC
(The following table shows the increment of thermal resistance R
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.016 0.011 K/W TJ = 125°C
120° 0.019 0.020
90° 0.024 0.026
60° 0.035 0.037
30° 0.060 0.060
Ordering Information Table
Device Code
IRK T F 10 2 - 08 H L N
1 2
1 - Module type
2 - Circuit configuration
3 - Fast SCR
4 - Current rating: I
5 - 1 = option with spacers and longer terminal screws
2 = option with standard terminal screws
6 - Voltage code: Code x 100 = V
7 - dv/dt code: H ≤ 400V/µs
8 -tq code: K ≤ 20µs
J ≤ 25µs
9 - None = Standard devices
N = Aluminum nitrade substrate
x 10 rounded
T(AV)
RRM
when devices operate at different conduction angles than DC)
thJC
3
4
5
6 7 8
(See Voltage Ratings Table)
8
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F102.. Series
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Bulletin I27097 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate and
cathode wire: UL 1385
- UL identification number for package:
UL 94V0
For all types A B C D E
IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85)
IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ----
IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF..
130
120
110
100
90
80
Maximum Allowable Case Temperature (°C
0 2040608010012
IRK.F102.. Ser ies
R (DC) = 0.17 K/W
thJC
Conduction Angle
30°
60°
90°
120°
180°
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
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130
120
110
100
90
80
Maximum Allowable Case Temperature (°C
0 20 40 60 80 100 120 140 160 18
Average On-state Current (A)
IRK.F102.. Se r ies
R (DC) = 0.17 K/W
thJC
30°
60°
90°
120°
Conduction Period
180°
DC
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IRK.F102.. Series
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Bulletin I27097 rev. A 09/97
200
180
160
140
120
100
Maximum Average On-state Power Loss (W
180°
120°
90°
60°
30°
RMS Limit
80
60
40
20
0
0 204060801001
Conduction An g le
IRK.F102.. Series
Per Junctio n
T = 125°C
J
Average On-state Current (A)
280
DC
180°
240
120°
90°
200
60°
30°
160
RMS Limi t
120
80
Con d uc t ion Period
IRK.F102.. Series
40
0
Maximum Average On-sta te Power Loss (W
0 20 40 60 80 100 120 140 160 18
Per Junction
T = 125°C
J
A vera g e On- s ta te C u rr en t ( A)
Fig. 4 - On-state Power Loss CharacteristicsFig. 3 - On-state Power Loss Characteristics
2600
2400
2200
2000
1800
At Any Rated Load Cond ition And With
Rated V App lied Follow ing S urge .
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
3000
2800
2600
2400
2200
2000
Maxim um N o n Repet itive Surge Curren
Versus Pulse Train Du rat io n. Cont ro
Of Condu ction Ma y Not Be Maintaine d
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
1800
1600
IRK.F102.. Series
Peak Hal f Sine Wave On- state Cu rrent (A
Per Junction
1400
11010
Number Of Equal Amplitude Half Cycle Curre nt Pulses (N
IRK.F102 .. Series
1600
Per Junction
Peak Half Sine Wave On-state Current (A
1400
0.01 0.1
Pulse Tr a in Durat ion (s)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1000
T = 25°C
J
100
T = 125°C
J
IRK.F102.. Series
Instantaneous On-state Current (A)
10
0.511.522.533.544.555
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance Z
Per Junction
6
1
Steady State Value
R = 0.17 K/W
thJC
(DC Operation)
thJC
0.1
0.01
IRK.F102.. Series
Per Junction
Transien t Therm al Imp edance Z (K /W
0.001
0.001 0.01 0.1 1 10 1
Square Wave Pul se Duration (s)
thJC
Characteristic
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IRK.F102.. Series
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Bulletin I27097 rev. A 09/97
200
IRK.F102.. Series
180
T = 125°C
J
160
140
120
100
I = 500 A
TM
300 A
200 A
100 A
80
60
40
20
10 20 30 40 50 60 70 80 90 10
Maximum Reverse Recovery Charge - Qrr (µC
R a te Of Fa ll Of On -s ta t e Curr en t - d i/dt (A/µs
50 A
160
IRK.F102.. Series
T = 125 °C
140
J
I = 500 A
TM
120
100
80
60
40
20
Maximum Reverse Recovery Current - Irr (A
10 20 30 40 50 60 70 80 90 10
Rate Of Fall Of On-st a te Curr en t - di/dt (A/µ
Fig. 9 - Reverse Recovery Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics
1E4
IRK.F102.. Series
Sinusoidal Pu lse
T = 90 °C
C
tp
1E3
1000
2500
Peak On-state Current (A)
5000
400
Snu bb e r circ uit
R = 47 ohms
s
C = 0.22 µF
s
V = 80% V
D
50 Hz
150
DRM
tp
IRK.F102. . Series
S inuso idal Pulse
T = 60 °C
C
2500
5000
1000
Snu bber circ uit
R = 47 ohms
C = 0. 22 µF
V = 80% V
400
s
s
D
100 A
50 A
150
300 A
200 A
DRM
50 Hz
1E2
1E1 1E 2 1E3 1E
Pulse Basewidth (µs)
1E4
11E21E31E
1E1
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
1E4
IRK.F102.. Series
Trapezoidal Pulse
T = 90°C, di/dt 50A/µs
C
tp
1E3
400
1000
P eak On -state Curr en t ( A)
1E2
1E1 1E2 1E3 1E
2500
5000
Pulse Basewidth (µs)
150
Snu bber circuit
R = 47 ohms
s
s
C = 0. 22 µF
V = 80% V
D
50 Hz
IRK.F102.. Series
Trape zoi d al Pu ls e
T = 90°C, di/dt 100A/µs
C
DRM
1E4
tp
400
150
1000
2500
5000
E1 1E2 1E3 1E
1E1
Pulse Basew idth (µs)
Snu bber circuit
R = 47 ohms
s
s
C = 0. 22 µF
V = 80% V
D
50 Hz
DRM
Fig. 12 - Frequency Characteristics
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IRK.F102.. Series
1
4
4
1
4
0
Bulletin I27097 rev. A 09/97
1E4
IRK.F102.. Series
Tr apezoida l Puls e
T = 6 0 °C, di/dt 50A/µs
C
tp
1E3
400
1000
2500
Peak On-state Current (A)
1E2
1E1 1E2 1E3 1E4
5000
150
Snubber circuit
R = 47 ohms
s
C = 0.22 µF
s
V = 80% V
D
50 Hz
Pulse Basewi dth (µs)
Fig. 13 - Frequency Characteristics
1E4
10 j oules per pulse
5
2.5
1
1E3
0.5
0.25
0.1
0.05
1E2
Peak On-state Current (A)
1E1
1E1 1E2 1E3 1E
IRK.F102.. Series
Sinus oid al pulse
tp
Pulse Basewidth (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
IRK.F102.. Series
Trapezo id al Pulse
T = 60°C, di/dt 100A/µs
C
DRM
1E4
tp
150
400
1000
2500
5000
E1 1 E2 1E 3 1E
1E1
Pul s e Basewi dth (µs)
10 joules per pulse
5
2.5
1
0.5
0.25
0.1
0.05
IRK .F 1 02.. Se rie s
Trapezoi da l Pulse
di/dt 50A/ µs
tp
1E4
1E1
E1 1E2 1E3 1E
Pulse Basewidth (µs)
Snubber cir cuit
R = 47 ohms
s
s
C = 0.22 µF
V = 80% V
D
DRM
50 Hz
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 20ohms
tr<=1 µs
10
Tj=25 °C
Tj=125 °C
(b)
(a)
Tj=-40 °C
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
1
(1)
VGD
Instantaneous Gate Voltage (V)
0.1
IGD
IRK.F102.. Series Frequenc y L imi te d by PG( AV)
0.01 0.1 1 10 10
(2) (3)
(4)
Instantane o us Gate Current (A)
Fig. 15 - Gate Characteristics
8
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