Datasheet IRKL26-04 Specification

Bulletin I27130 rev. G 10/02

IRK.26 SERIES

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Features

High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500V

isolating voltage

RMS

Mechanical Description

The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads.

ADD-A-pakTM GEN V Power Modules

Benefits

Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded

The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules.

27 A

Electrical Description

These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.

Major Ratings and Characteristics

Parameters IRK.26 Units

I

or I

T(AV)

F(AV)

@ 85°C

I

(*) 60 A

O(RMS)

I

@ 50Hz 400 A

TSM

I

@ 60Hz 420 A

FSM

I2t @ 50Hz 800 A2s

@ 60Hz 730 A2s I2√t 8000 A2√s V

range 400 to 1600 V

RRM

T

STG

T

J

(*) As AC switch.

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27 A

- 40 to 125

- 40 to125

o

C

o

C

1

IRK.26 Series

Bulletin I27130 rev. G 10/02

ELECTRICAL SPECIFICATIONS

Voltage Ratings

V

, maximum V

RRM

Type number

Voltage repetitive non-repetitive peak off-state voltage, I

Code peak reverse voltage peak reverse voltage gate open circuit 125°C

-VVVmA

04 400 500 400 06 600 700 600 08 800 900 800

IRK.26 10 1000 1100 1000 15

12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600

On-state Conduction

Parameters IRK.26 Units Conditions

I

Max. average on-state

T(AV)

current (Thyristors) 27 180

I

Max. average forward 27 T

F(AV)

current (Diodes)

I

Max. continuous RMS

O(RMS

)

on-state current.

As AC switch

I

Max. peak, one cycle 400 t=10ms No voltage

TSM

or non-repetitive on-state 420 t=8.3ms reapplied I

or forward current 335 t=10ms 100% V

FSM

2

I

t Max. I2t for fusing 800 t=10ms No voltage

2

I

√t Max. I2√t for fusing (1) 8000 A2√s t= 0.1 to 10ms, no voltage reappl. TJ =TJ max

Max. value of threshold 0.92 Low level (3)

V

T(TO)

voltage (2) 0.95 High level (4)

r

Max. value of on-state 12.11 Low level (3)

t

slope resistance (2) 11.82 High level (4)

V

Max. peak on-state or I

TM

forward voltage I

V

FM

di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V

of rise of turned on 150 A/µs I

current t

I

Max. holding current 200 TJ = 25oC, anode supply = 6V,

H

Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load

I

L

(1) I2t for time t (4) I > π x I

AV

= I2√t

x √tx(2) Average power = V

x

60

350 t=8.3ms reapplied 470 t=10ms T 490 t=8.3ms no voltage reapplied

730 t=8.3ms reapplied 560 t=10ms 100% V

510 t=8.3ms reapplied 1100 t=10ms T 1000 t=8.3ms no voltage reapplied

1.95 V

x I

T(TO)

T(AV)

2

, maximum V

RSM

A

A2s

V

mΩ

mA

+ r

x (I

t

T(RMS)

, max. repetitive I

DRM

o

conduction, half sine wave,

= 85oC

C

or

I

(RMS)

RRM

Initial T

= 25oC,

J

Initial TJ = TJ max.

RRM

= 25oC,

J

TJ = TJ max

= TJ max

T

J

= π x I

TM

T(AV)

= π x I

FM

F(AV)

=π x I

TM

< 0.5 µs, tp > 6 µs

r

T(AV)

, I

= 500mA,

g

TJ = 25oC

,

DRM

resistive load, gate open circuit

2

)

(3) 16.7% x π x I

< I < π x I

AV

Sinusoidal

half wave,

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= TJ max.

J

AV

RRM DRM

I

(RMS)

Bulletin I27130 rev. G 10/02

Triggering

Parameters IRK. 26 Units Conditions

PGMMax. peak gate power 10

Max. average gate power 2.5

P

G(AV)

I

Max. peak gate current 2.5 A

GM

-V

Max. peak negative

GM

gate voltage

Max. gate voltage

V

GT

required to trigger

Max. gate current

I

GT

required to trigger Max. gate voltage

V

GD

that will not trigger

I

Max. gate current

GD

that will not trigger

10

4.0 T

2.5 T

1.7 T 270 T

150 mA TJ = 25°C

80 T

0.25 V

6mA

W

= - 40°C

V

J

= 25°C

J

= 125°C

J

= - 40°C

J

= 125°C

J

T

= 125oC,

J

rated V

= 125oC,

T

J

rated V

DRM

applied

Blocking

Parameters IRK. 26 Units Conditions

Max. peak reverse and

I

RRM

I

off-state leakage current 15 mA T

DRM

at V

, V

RRM

DRM

V

RMS isolation voltage 2500 (1 min) V 50 Hz, circuit to base, all terminals

INS

3500 (1 sec) shorted

dv/dt Max. critical rate of rise 500 V/µsT

= 125oC, gate open circuit

J

= 125oC, linear to 0.67 V

J

IRK.26 Series

Anode supply = 6V resistive load

,

DRM

(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.

Thermal and Mechanical Specifications

Parameters IRK.26 Units Conditions

TJJunction operating

temperature range

T

Storage temp. range - 40 to 125

stg

Max. internal thermal

R

thJC

resistance, junction 0.31 Per module, DC operation to case Typical thermal resistance

R

thCS

case to heatsink

T Mounting torque ± 10%

to heatsink busbar 3

wt Approximate weight 110 (4) gr (oz)

Case style TO-240AA JEDEC

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance R

Devices Units

180

Sine half wave conduction Rect. wave conduction

o

120

o

90

IRK.26 0.23 0.27 0.34 0.48 0.73 0.17 0.28 0.36 0.49 0.73 °C/W

- 40 to 125

o

60

°C

K/W

0.1

5

Nm

when devices operate at different conduction angles than DC)

thJC

o

30

180o120

Mounting surface flat, smooth and greased

A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound

o

90

60

o

30

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3

IRK.26 Series

Bulletin I27130 rev. G 10/02

Ordering Information Table

Device Code

IRK T 26 / 16 A S90

1

2 3

1 - Module type 2 - Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: S90 = dv/dt 1000 V/µs

No letter = dv/dt 500 Vµs

5

4

Outline Table

IRK.27 types

With no auxiliary cathode

6

* * Available with no auxiliary cathode.

To specify change: 26 to 27

e.g. : IRKT27/16A etc.

Dimensions are in millimeters and [inches]

IRKT IRKH IRKL

(4) (5)

(1)

~

+

(2)

-

(3)

K1G1

K2 G2

(7)

(6)

G1

(4) (5)

(1)

~

+

(2)

-

(3)

K1

NOTE: To order the Optional Hardware see Bulletin I27900

4

(1)

~

+

(2)

-

(3)

K2

(7)G2(6)

IRKN

G1

(4) (5)

(1)

-

+

(2)

+

(3)

K1

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IRK.26 Series

Bulletin I27130 rev. G 10/02

130

IRK.26.. Series R (DC) = 0.62 K/W

thJC

120

110

100

30°

90

80

Maxi mum Allowable Case Temperatur e (°C)

0 5 10 15 20 25 30

Conduction A ng le

60°

90°

120°

Average On-state Current (A)

180°

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C)

0 1020304050

IRK.26.. Series R (DC) = 0.62 K/W

thJC

Conduct ion Pe ri od

30°

60°

90°

120°

Average On-s tate C urrent (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

50

180° 120°

40

30

20

10

0

Maximum Average On-state Power Loss (W)

90° 60° 30°

RMS Limit

Conducti on A ngle

IRK.26.. Series Per Junction T = 125°C

J

0 5 10 15 20 25 30

Aver age On-sta te Current (A)

70

DC

180°

60

120°

90°

50

60° 30°

40

30

20

Conduction Period

10

0

Maximum Average On-state Power Loss (W)

01020304050

Average On-s tate Curre nt (A)

Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics

180°

RMS Limit

IRK.26.. Series Per Junction T = 125°C

J

DC

400

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

350

Initial T = 125°C

J

@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

300

250

200

IRK.26.. Series

Peak Half Si ne Wave On-state Current (A)

Per Junction

150

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

400

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

350

No Voltage Reapplied

300

250

200

IRK.26.. Series

Peak Half Sine Wave On-state Current (A)

Per Junctio n

150

0.01 0.1 1 Pulse Train Duration (s)

Rated V Reapplied

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

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Initial T = 125°C

J

RRM

5

IRK.26 Series

Bulletin I27130 rev. G 10/02

100

90 80 70

180° 120°

90° 60° 30°

60 50 40

Conduction Angle

30 20 10

Maximum Total On-state Power Loss (W)

0

10 20 30 40 50 60

IRK.26.. Series

Per Module

T = 125°C

J

Total RMS Output Current (A)

Fig. 7 - On-state Power Loss Characteristics

250

200

150

100

50

Maximum Total Power Loss (W)

0

0 102030405060

180°

(Sine)

180°

(Rect)

2 x IRK.26.. Series

Single Phase Bridge

Connected

T = 125°C

J

Total Output C urrent (A )

Fig. 8 - On-state Power Loss Characteristics

R

0

.

0

5

.

7

K

1

/

W

K

/

W

1

.

5

K

/

W

2

K

/

W

3

K

/

W

4

K

/

W

8

K/

W

t

.

h

3

S

K

A

K

/

W

/

W

=

0

.

1

K /

W

D

e

l

t

a

R

0 20 40 60 80 100 120 140

Maximum Allowab l e Ambient Temperat ure (°C)

R

t

0

h

.

S

2

0

.

3

K

/

W

0

.

5

K

/

W

0

.

7

K

/

W

1

K

/

W

1

.

5

K

/

W

3

K/

W

8

K

/

W

A

K

/

=

W

0

.

1

K

/

W

-

D

e

l

t

a

R

0 20 40 60 80 100 120 140

Maximum Allowabl e Ambient Temperature (°C)

350

300

250

200

120°

(Rect)

150

100

3 x IRK.26.. Series

Three Phase Bridge

Maximum Total Power Loss (W)

50

0

0 1020304050607080

Connected

T = 125°C

J

Total Output Current (A)

0

.

3

K

/

W

0

.

4

K

/

W

0.

5

K

/

W

0

.

7

K

/

W

1

K

/

W

1

.

5

K

/

W

3

K

/

W

0 20406080100120140

Maximum Allowable Ambient Temperatur e (°C)

R

t

h

0

S

.

A

2

K

=

/

W

0

.

1

K

/

W

D

e

l

t

a

R

Fig. 9 - On-state Power Loss Characteristics

6

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1

thJC

0.1

1000

100

10

Instantaneous On-state Current (A)

1

01234567

Fig. 10 - On-state Voltage Drop Characteristics

Steady State Value: R = 0.62 K/W

thJC

(DC Operation)

T = 25°C

J

T = 125°C

J

IRK.26.. Series Per Junction

Insta ntaneous O n -state Voltage (V)

IRK.26 Series

Bulletin I27130 rev. G 10/02

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IRK.26.. Series

Transient Thermal Impeda nce Z (K/W)

0.01

0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s)

Characteristics

thJC

(1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms

100

Rectangular gate pulse a)Recommended load line for

rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/dt: 20 V, 65 ohms

10

tr = 1 µs, tp >= 6 µs

Fig. 11 - Thermal Impedance Z

(a)

(b)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

1

(3) (2) (1)

(4)

Instantaneous Gate Voltage (V)

VGD

IGD

0.1

0.001 0.01 0.1 1 10 100 1000

IRK.26.. Series

Frequency Li m ited by PG(AV)

Instantaneous Gate Current (A)

Fig. 12- Gate Characteristics

7

IRK.26 Series

Bulletin I27130 rev. G 10/02

This product has been designed and qualified for Industrial Level.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

8

Data and specifications subject to change without notice.

Qualification Standards can be found on IR's Web site.

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 10/02

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