Datasheet IRK.F112 Datasheet (IOR)

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Bulletin I27091 rev.A 09/97

IRK.F112.. SERIES

FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR

Features

Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
Industrial standard package
UL E78996 approved

isolating voltage

RMS

Description

These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.

Major Ratings and Characteristics

Parameters IRK.F112.. Units

I

T(AV)

@ T

C

I

T(RMS)

I

TSM

I2t @ 50Hz 47.8 KA2s

2

I
t

q

t

rr

V
T

@ 50Hz 3090 A
@ 60Hz 3237 A

@ 60Hz 43.6 KA

√t 478 KA2√s

/ V

DRM

RRM

range - 40 to 125

J

112 A

90 °C

250 A

2

s

10 and 15 µs

2µs

up to 800 V

o

C

INT-A-pakä Power Modules

112 A

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1

IRK.F112.. Series

Bulletin I27091 rev. A 09/97

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

RRM/VDRM

Type number Code peak reverse voltage repetitive peak rev. voltage @ T

IRK.F112.. Series 30

04 400 400
08 800 800

Current Carrying Capacity

, maximum repetitive V

, maximum non- I

RSM

RRM/IDRM

VVmA

max.

= 125°C

J

I

Frequency f Units

180oel

TM

180oel

I

TM

100µs

I

TM

50Hz 220 220 350 550 2060 2900 A
400Hz 285 285 425 695 1230 1785 A
2500Hz 205 205 350 550 460 552 A
5000Hz 175 170 295 448 295 448 A
10000Hz 125 120 230 337 - - A

Recovery voltage Vr 50 50 50 50 50 50 V
Voltage before turn-on Vd 80% V

DRM

80% V

DRM

80% V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 90 60 90 60 90 60 °C
Equivalent values for RC circuit 47 Ω / 0.22 µF 47 Ω / 0.22 µF 47 Ω / 0.22 µF

On-state Conduction

Parameter IRK.F112.. Units Conditions

I

Maximum average on-state current 112 A 180° conduction, half sine wave

T(AV)

@ Case temperature 90 °C
Maximum RMS current 250 A TC = 90°C, as AC switch

I

T(RMS)

I

Maximum peak, one-cycle, 3090 A t = 10ms No voltage

TSM

non-repetitive surge current 3237 t = 8.3ms reapplied

2600 t = 10ms 100% V
2720 t = 8.3ms reapplied Sinusoidal half wave,

2

t Maximum I2t for fusing 47.8 KA2s t = 10ms No voltage Initial TJ = 125°C

I

43.6 t = 8.3ms reapplied

33.8 t = 10ms 100% V

30.8 t = 8.3ms reapplied

2

√t Maximum I2√t for fusing 478 KA2√s t = 0 to 10ms, no voltage reapplied

I

Low level value of threshold voltage 1.19 V (16.7% x π x I

V

T(TO)1

High level value of threshold voltage 1.43 (I > π x I

V

T(TO)2

r

Low level value of on-state slope resistance 1.67 mW (16.7% x π x I

t1

r

High level value of on-state slope resistance 1.12 (I > π x I

t2

V

Maximum on-state voltage drop 1.77 V Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse

TM

I

Maximum holding current 600 mA T

H

I

Typical latching current 1000 mA T

L

T(AV)

T(AV)

= 25°C, IT > 30 A

J

= 25°C, VA = 12V, Ra = 6Ω, Ig = 1A

J

2

RRM

RRM

< I < π x I

T(AV)

), TJ = TJ max.

< I < π x I

T(AV)

), TJ = TJ max.

), TJ = TJ max.

T(AV)

), TJ = TJ max.

T(AV)

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V

IRK.F112.. Series

Bulletin I27091 rev. A 09/97

Switching

Parameter IRK.F112.. Units Conditions

di/dt Maximum non-repetitive rate of rise 800 A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% V

TJ = 125°C

Maximum recovery time 2 µs ITM = 350A, di/dt = -25A/µs, V

t

rr

t

Maximum turn-off time N L ITM = 350A, TJ = 125°C, di/dt = -25A/µs,

q

10 15 µs V

Blocking

Parameter IRK.F112.. Units Conditions

dv/dt Maximum critical rate of rise of off-state 1000 V/µs T

voltage
RMS isolation voltage 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s

V

INS

Maximum peak reverse and off-state 30 mA TJ = 125°C, rated V

I

RRM

leakage current

I

DRM

Triggering

Parameter IRK.F112.. Units Conditions

P

Maximum peak gate power 60 W f = 50 Hz, d% = 50

GM

Maximum peak average gate power 10 W TJ = 125°C, f = 50Hz, d% = 50

P

G(AV)

Maximum peak positive gate current 10 A TJ = 125°C, tp < 5ms

I

GM

Maximum peak negative gate voltage 5 V

- V

GM

Max. DC gate current required to trigger 20 0 m A TJ = 25°C, Vak 12V, Ra = 6

I

GT

DC gate voltage required to trigger 3 V

V

GT

DC gate current not to trigger 20 m A TJ = 125°C, rated V

I

GD

DC gate voltage not to trigger 0.25 V

V

GD

= 50V, dv/dt = 400V/µs linear to 80% V

R

= 125°C., exponential to 67% V

J

DRM/VRRM

DRM

= 50V, TJ = 25°C

R

applied

applied

DRM

DRM

DRM

Thermal and Mechanical Specifications

Parameter IRK.F112.. Units Conditions

TJMax. junction operating temperature range - 40 to 125 °C
T

Max. storage temperature range - 40 to 150

stg

R

Max. thermal resistance, junction to 0.17 K/W Per junction, DC operation

thJC

case
Max. thermal resistance, case to 0.035 K/W Mounting surface flat and greased

R

thC-hs

heatsink Per module

T Mounting torque ± 10% IAP to heatsink 4 - 6 (35 - 53) Nm

busbar to IAP 4 - 6 (35 - 53) (lb*in)

wt Approximate weight 500 (17.8) g (oz)

A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound

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3

IRK.F112.. Series

Bulletin I27091 rev. A 09/97

∆R

Conduction

thJC

(The following table shows the increment of thermal resistance R

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

180° 0.015 0.012 K/W TJ = 125°C
120° 0.018 0.020

90° 0.024 0.027
60° 0.036 0.037

30° 0.060 0.060

Ordering Information Table

Device Code

IRK T F 11 2 - 08 H L N

1 2

1 - Module type
2 - Circuit configuration
3 - Fast SCR
4 - Current rating: I
5 - 1 = option with spacers and longer terminal screws

2 = option with standard terminal screws

6 - Voltage code: Code x 100 = V
7 - dv/dt code: H ≤ 400V/µs
8 -tq code: N ≤ 10µs

L ≤ 15µs

9 - None = Standard devices

N = Aluminum nitrade substrate

x 10 rounded

T(AV)

RRM

when devices operate at different conduction angles than DC)

thJC

3

4

5

6 7 8

(See Voltage Ratings Table)

9

NOTE: To order the Optional Hardware see Bulletin I27900

4

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IRK.F112.. Series

0

)

0

)

Bulletin I27091 rev. A 09/97

Outline Table

- All dimensions in millimeters (inches)

- Dimensions are nominal

- Full engineering drawings are available
on request

- UL identification number for gate and
cathode wire: UL 1385

- UL identification number for package:
UL 94V0

For all types A B C D E

IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85)
IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ----

IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF..

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C

0 2040608010012

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

IRK.F1 12.. Serie s
R (DC) = 0.17 K/W

thJC

Conduction Angle

30°

60°

90°

120°

180°

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130

120

110

100

90

80

70

Ma xi mum A llowable C as e Temperatu re (°C

0 40 80 120 160 20

Average On-st ate Cu r ren t (A)

Fig. 2 - Current Ratings Characteristics

IRK.F112.. Ser ies
R (DC) = 0.17 K/W

30°

60°

90°

120°

thJC

Conduction Period

180°

DC

5

IRK.F112.. Series

20

)

80

)

0

)

)

1

)

l

.

t

5

0

Bulletin I27091 rev. A 09/97

200
180
160
140

180°

120°

90°
60°
30°

120

RMS Limit

100

80
60
40
20

0

Maximum Average On-state Power Loss (W

0 204060801001

Conduction Angle

IRK.F112.. Series
Per Junction
T = 125°C

J

Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

2800

2600

2400
2200

2000

1800
1600

1400

Peak Half Sine Wa ve On-s t a te C urrent (A

1200

Number Of Equal Amplitude Half Cycle Current Pulses (N

At Any Rated Load Con dit ion And With

Rated V Applied Following Surge.

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

IRK.F112.. Series
Per Junctio n

11010

280

DC

240

200

160

120

180°

120°

90°
60°
30°

RMS Limi t

Conduction P eriod

80

IRK.F112.. Series

40

0

Maximum Average On-state Power Loss (W

0 204060801001201401601

Per Junction
T = 125°C

J

Average On- s ta te C u rr ent (A )

Fig. 4 - On-state Power Loss Characteristics

3200
3000
2800
2600
2400

Maximum Non R epetitive Surge Curre n

Versus Pulse Tra in Duration. Contro

Of Condu ction Ma y Not Be Maintained

Init ial T = 125 °C

No Voltage Reapplied
Rated V Re appl ied

2200
2000
1800
1600

IRK.F112.. Series

1400

Peak Half Sine Wave On-state Current (A

Per Junction

1200

0.01 0.1
Pulse Train Duration (s)

RRM

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

J

10000

1000

T = 25°C

J

T = 125°C

100

Instantaneous On-state Current (A)

10

0.511.522.533.544.5
Instantaneous On-state Voltage (V)

Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance Z

J

IRK.F112.. Series
Per Junction

6

1

Stead y St ate Value
R = 0.17 K/W

thJC

(DC Operation)

thJC

0.1

0.01

IRK.F112.. Series
Per Junction

Transien t Thermal Impedance Z (K/W)

0.001

0.001 0.01 0.1 1 10 10
Square Wave Pulse Durat ion (s)

thJC

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Characteristic

IRK.F112.. Series

0

)

)

0

)

s)

4

E

4

4

E

4

Bulletin I27091 rev. A 09/97

160

140

IRK.F112.. Se r ies
T = 125 °C

J

I = 500 A

TM

120

100

80

60

40

20

10 20 30 40 50 60 70 80 90 10

Maximum Reverse Recovery Charge - Qrr (µC

Rate Of Fal l Of On -state C ur ren t - di/ dt (A/µs

300 A

200 A

100 A

50 A

140

IRK.F112.. Ser ies
T = 125 °C

J

120

100

80

I = 50 0 A

TM

300 A
200 A
100 A

50 A

60

40

20

Maximum Reverse Recovery Current - Irr (A

10 20 30 40 50 60 70 80 90 10

Rate Of Fall Of On-state Current - di/dt (A/µ

Fig. 9 - Reverse Recovery Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics

1E4

1E3

IRK.F112.. Series
Sinusoidal Pulse
T = 90 °C

tp

C

1000

2500

5000

400

Snu bber circ uit
R = 47 ohms

s
s

C = 0.22 µF

V = 80% V

D

50 Hz

150

Peak On-s ta te Current (A )

1E2

1E1 1E 2 1E3 1E

Pulse Basewi dth (µs)

DRM

1000

2500

5000

1E1

11E21E31E

1E4

Pulse Basewidth (µs)

400

tp

Snu bbe r circ u it
R = 47 ohms
C = 0.22 µF

V = 80% V

150

IRK.F112.. Series
Sinusoid al Puls e
T = 60 °C

C

Fig. 11 - Frequency Characteristics

s
s

D

50 Hz

DRM

1E4

1E3

IRK.F112.. Series
Trapezoidal Pulse
T = 90°C, di/dt 50A/µs

tp

C

2500

1000

400

150

50 Hz

Snubber c ircuit
R = 47 ohms

s

C = 0.22 µF

s

V = 80% V

D

DRM

Peak On-state Cu r rent ( A)

5000

1E2

1E1 1E2 1E3 1E

Pulse Basewi dth (µs)

1E4

11E21E31E

1E1

IRK.F112.. Seri es
Tr a p e z o id al Pu l se
T = 90°C, di/dt 100A/µs

C

tp

2500

5000

Pulse Basewidth ( µs)

1000

400

Snubber circuit
R = 22 ohms
C = 0. 15 µF

V = 80% V

50 Hz

150

s
s

DRM

D

Fig. 12 - Frequency Characteristics

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IRK.F112.. Series

4

1

4

1

4

0

Bulletin I27091 rev. A 09/97

1E4

1E3

IRK.F112.. Series
Trapezoidal Pulse
T = 60°C, di/d t 50A/µs

C

tp

2500

5000

1000

400

S nu b ber circu it
R = 47 ohms

s

C = 0.22 µF

s

V = 80% V

D

50 Hz

150

Peak On - s ta te Curren t (A)

1E2

1E1 1E2 1E3 1E

Pulse B asewidth (µs)

Fig. 13 - Frequency Characteristics

1E4

10 joules per pulse

5

2.5

1

0.05

0.1

0.25

0.5

1E3

1E2

Pe a k On - s ta te Current (A )

1E1

1E1 1E2 1E3 1E4

IRK.F112.. Series
Sinus oid al pulse

tp

Pulse Basewi dth (µs)

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

DRM

400

S nu b ber circu it
R = 47 ohms

s
s

C = 0. 22 µF
V = 80% V

D

150

IRK.F112.. Series
Trapezoidal Pulse
T = 60°C, di/dt 100A/µs

C

tp

1000

2500

5000

1E4

E1 1E2 1E3 1E

1E1

Pulse Basewidth (µs)

10 jou l e s per pulse

5

2. 5

1

0. 5

0. 25

0.1

0. 05

IRK.F112..Series
Trapezoi da l Pulse
di/dt 50A/µs

tp

1E4

1E1

E1 1E2 1E3 1E

Pulse Ba s ewid t h (µs )

DRM

50 Hz

100

Rectangular gate pulse

a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

(b)

Tj=25 °C

Tj=125 °C

(a)

Tj=-40 °C

(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms

1

(1)

(2)

(3) (4)

VGD

Instantane ous Gate Voltage (V)

0.1

IG D

0.01 0.1 1 10 10

IRK.F112. . Ser ie s Frequency Limited by PG(AV )

Instantaneous Gate Current (A)

Fig. 15 - Gate Characteristics

8

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