Datasheet IRHNA7064, IRHNA8064 Datasheet (International Rectifier)

Provisional Data Sheet No. PD-9.1416

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REPETITIVE A V ALANCHE AND dv/dt RATED

HEXFET

60 Volt, 0.015

International Rectifier’s RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail­ure. Additionally , under identical pre- and post-radia­tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFET s, such as volt­age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.

They are well-suited for applications such as switch­ing power supplies, motor controls, inverters, chop­pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.

12

Rads (Si)/Sec, and return to normal opera-

®

TRANSISTOR

ΩΩ

Ω, MEGA RAD HARD HEXFET

ΩΩ

Product Summary

Part Number BVDSS RDS(on) ID

IRHNA7064 60V 0.015Ω 75A*
IRHNA8064 60V 0.015Ω 75A*

Features:

■ Radiation Hardened up to 1 x 10

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Lightweight

IRHNA7064
IRHNA8064

N-CHANNEL

MEGA RAD HARD

6

Rads (Si)

Absolute Maximum Ratings

Pre-Radiation

Parameter IRHNA7064, IRHNA8064 Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 75*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 56

I

DM

PD @ TC = 25°C Max. Power Dissipation 300 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 4.5

T

J

T

STG

Notes: See page 4 *Current is limited by pin diameter

Pulsed Drain Current ➀ 356

Linear Derating Factor 2.0 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ 75* A
Repetitive Avalanche Energy ➀ 30 m J

Operating Junction -55 to 150
Storage Temperature Range -55 to150

Package Mounting Surface Temperature 300
Weight 3.3 (typical) g

(for 5 sec.)

A

V/ns

o

C

IRHNA7064, IRHNA8064 Devices Pre-Radiation

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV
R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

DSS

Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0 mA

/∆TJTemperature Coefficient of Breakdown — 0.048 — V/°C Reference to 25°C, ID = 1.0 mA

Voltage
Static Drain-to-Source — — 0.015 VGS = 12V, ID = 56A
On-State Resistance — — 0.018 Ω VGS = 12V, ID = 75A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 18 — — S ( )VDS > 15V, IDS = 56A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 260 VGS =12V, ID = 75A
Gate-to-Source Charge — — 60 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 86
Turn-On Delay Time — — 27 VDD = 30V, ID = 75A,
Rise Time — — 120 RG = 2.35Ω
Turn-Off Delay Time — — 76
Fall Time — — 93
Internal Drain Inductance — 8.7 —

Internal Source Inductance — 8.7 —

Input Capacitance — 7400 — VGS = 0V, VDS = 25V
Output Capacitance — 3200 — f = 1.0 MHz
Reverse Transfer Capacitance — 540 —

Ω

µA

nA

nC

ns

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

nH

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

pF

VGS = 0V, TJ = 125°C

Modified MOSFET
symbol showing the
internal inductances.

➃

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — 35 Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode) ➀ — — 284 integral reverse p-n junction rectifier.

SM

V

Diode Forward Voltage — — 3.0 V Tj = 25°C, IS = 75A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 220 ns Tj = 25°C, IF = 75A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 1.1 µCV

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R

thJC

R

thJ-PCB

Notes: See page 4

Junction-to-Case — — 0.42
Junction-to-PC board — TBD — soldered to a copper-clad PC board

K/W➄

A

≤ 50V ➃

DD

+ LD.

S

IRHNA7064, IRHNA8064 Devices Radiation Characteristics

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Radiation Performance of Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX­FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a

bias condition equal to 80% of the device

V

DSS

rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10

5

Rads (Si)
are identical and are presented in Table 1, column
1, IRHNA7064. The values in Table 1 will be met for
either of the two low dose rate test circuits that are

Table 1. Low Dose Rate ➅ ➆ IRHNA7064 IRHNA8064

BV

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)1

V

SD

Parameter

Drain-to-Source Breakdown Voltage 60 — 60 —
Gate Threshold Voltage ➃ 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0 mA
Gate-to-Source Leakage Forward — 100 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20V
Zero Gate Voltage Drain Current — 25 — 50 µAVDS = 0.8 x Max Rating, VGS = 0V
Static Drain-to-Source ➃ — 0.015 — 0.021 Ω VGS = 12V, ID = 56A
On-State Resistance One
Diode Forward Voltage ➃ — 3.0 — 3.0 V TC = 25°C, IS = 75A,VGS = 0V

100K Rads (Si) 1000K Rads (Si) Units Test Conditions ➉

min. max. min. max.

used. Both pre- and post-radiation performance are
tested and specified using the same drive circuitry
and test conditions in order to provide a direct com­parison. It should be noted that at a radiation level
of 1 x 10

5

Rads (Si), no change in limits are speci-

fied in DC parameters.
High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 10

12

Rads

(Si)/Sec.
International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.

V

nA

VGS = 0V, ID = 1.0 mA

VGS = 20V

Table 2. High Dose Rate ➇

Parameter Min. Typ Max. Min.Typ. Max. Units Test Conditions

V
I

PP

di/dt — 800 — — 160 — A/µsec Rate of rise of photo-current
L

Drain-to-Source Voltage — — 48 — — 48 V Applied drain-to-source voltage

DSS

1

Table 3. Single Event Effects ➈

Parameter Typ. Units Ion

BV

DSS

60 V Ni 28 1 x 10

1011 Rads (Si)/sec 1012 Rads (Si)/sec

— 140 — — 140 — A Peak radiation induced photo-current

0.1 — — 0.8 — — µH Circuit inductance required to limit di/dt

during gamma-dot

LET (Si) Fluence Range VDS Bias VGS Bias

(MeV/mg/cm

2

) (ions/cm2)(µm) (V) (V)

5

~41 60 -5

IRHNA7064, IRHNA8064 Devices Radiation Characteristics

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➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.
Refer to current HEXFET reliability report.

➁ @ V

➂ I

= 50V, Starting TJ = 25°C,

DD

EAS = [0.5 * L * (I
Peak IL = 75A, VGS = 12V

≤ 75A, di/dt ≤ 170 A/µs,

SD
VDD ≤ BV
Suggested RG = 2.35Ω

, TJ ≤ 150°C

DSS

2

) * [BV

L

DSS

/(BV

DSS-VDD

)]

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ K/W = °C/W

W/K = W/°C

Case Outline and Dimensions – SMD2

➅ Total Dose Irradiation with V

+12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.

➆ Total Dose Irradiation with V

VDS = 0.8 rated BV
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.

DSS

Bias.

GS

Bias.

DS

(pre-radiation)

➇ This test is performed using a flash x-ray

source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.

➈ Process characterized by independent laboratory.
➉ All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct
comparison for circuit applications.

Legend

1 - Drain
2 - Source
3 - Gate

Notes:

1. Dimensioning and Tolerancing per ANSI Y14.5M-1982

2. Controlling Dimension: Inch

3. Dimensions are shown in millimeters (Inches)
4 Dimension includes metallization flash
5 Dimension does not include metallization flash

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