Page 1
Provisional Data Sheet No. PD-9.1395
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REPETETIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
-200 Volt, 0.8
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold v oltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications
up to 1 x 105 Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weap-
ons environments.
ΩΩ
Ω, RAD HARD HEXFET
ΩΩ
IRHM9230
P-CHANNEL
RAD HARD
Product Summary
Part Number BV
DSS
IRHM9230 -200V 0.8Ω -6.5A
Features:
■ Radiation Hardened up to 1 x 105 Rads (Si)
12
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Ceramic Eyelets
■ Electrically Isolated
R
DS(on)
I
D
Absolute Maximum Ratings
Parameter IRHM9230 Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -6.5
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -4.1
I
DM
PD @ TC = 25°C Max. Power Dissipation 75 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0
T
J
T
STG
Notes: See page 4
Pulsed Drain Current -26
Linear Derating Factor 0.2 W/K
Gate-to-Source V oltage ±20 V
Single Pulse Avalanche Energy 330 mJ
Avalanche Current -6.5 A
Repetitive Avalanche Energy 7.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1 .6mm) from case for 10s)
Weight 9.3 (typical) g
Pre-Radiation
A
V/ns
o
C
Page 2
IRHM9230 Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0 mA
/∆TJTemperature Coefficient of Breakdown — -0.10 — V/°C Reference to 25°C, ID = -1.0 mA
Voltage
Static Drain-to-Source — — 0.8 VGS = -12V, ID = -4.1A
On-State Resistance — — 0.92 Ω VGS = -12V, ID = -6.5A
Gate Threshold V oltage -2.0 — -4.0 V VDS = VGS, ID = -1.0 mA
Forw ard Tr ansconductance 2.2 — — S ( ) VDS > -15V, IDS = -6.5A
Zero Gate Voltage Drain Current — — -25 VDS = 0.8 x Max. Rating,VGS = 0V
— — -250 VDS = 0.8 x Max. Rating
Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS = 20V
Total Gate Charge — — 35 VGS = -12V, ID = -6.5A
Gate-to-Source Charge — — 10 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 25
Turn-On Delay Time — — 50 VDD = -100V, ID = -6.5A, RG = 2.35Ω
Rise Time — — 90
Turn-Off Delay Time — — 90
Fall Time — — 90
Internal Drain Inductance — 5.0 —
Internal Source Inductance — 15 —
Input Capacitance — 1100 — VGS = 0V, VDS = -25V
Output Capacitance — 310 — f = 1.0 MHz
Reverse Transfer Capacitance — 5 5 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current — — -6.5 Modified MOSFET symbol
S
(Body Diode)
I
Pulse Source Current — — -26
SM
(Body Diode) ➀
V
Diode Forward V oltage — — -5.0 V Tj = 25°C, IS = -6.5A, VGS = 0V
SD
t
Reverse Recovery Time — — 400 ns Tj = 25°C, IF = -6.5A, di/dt ≤ -100 A/µs
rr
Q
Reverse Recovery Charge — — 3.0 µCV
RR
t
Forward T urn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
thJC
thJA
Junction-to-Case — — 1.67
Junction-to-Ambient — 30 —
Notes: See page 4
showing the integral Reverse
p-n junction rectifier.
A
K/W
≤ -50V
DD
Page 3
IRHM9230 Device Radiation Characteristics
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Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test method
1019. International Rectifier has imposed a standard
gate voltage of -12 volts per note 6 and a V
condition equal to 80% of the device rated voltage per
note 7. Pre- and post-radiation limits of the devices
irradiated to 1 x 10
5
Rads (Si) are identical and are
presented in Table 1. The v alues in Table 1 will be met
for either of the two low dose rate test circuits that are
used.
Table 1. Low Dose Rate
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
Drain-to-Source Breakdown Voltage -200 — VGS = 0V, ID = -1.0 mA
Gate Threshold V oltage -2.0 -4.0 VGS = VDS, ID = -1.0 mA
Gate-to-Source Leakage Forward — -100 VGS = -20V
Gate-to-Source Leakage Reverse — 100 VGS = 20V
Zero Gate Voltage Drain Current — -25 µA VDS = 0.8 x Max Rating, VGS = 0V
Static Drain-to-Source — 0.8 Ω VGS = -12V, ID = -4.1A
On-State Resistance One
Diode Forward Voltage — -5.0 V TC = 25°C, IS = -6.5A,VGS = 0V
bias
DSS
IRHM9230
100K Rads (Si)
min. max.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as stated
in MIL-PRF-19500 Group D. International Rectifier PChannel radiation hardened HEXFETs have been
characterized in heavy ion Single Event Effects
environment and the results are shown in Table
Units Test Conditions
V
nA
3.
5
Table 2. High Dose Rate
Parameter
V
I
di/dt — -800 — — -160 — A/µsec Rate of rise of photo-current
L
Drain-to-Source Voltage — — -160 — — -160 V Applied drain-to-source voltage
DSS
PP
1
Table 3. Single Event Effects
Parameter Typ. Units Ion (MeV/mg/cm2) (ions/cm2)(µm) (V) (V)
BV
DSS
-200 V Ni 2 8 1 x 10
11
Rads (Si)/sec1012 Rads (Si)/sec
10
Min. Typ Max. Min.Typ. Max.
— -100 — — -100 — A Peak radiation induced photo-current
1 — — 20 — µH Circuit inductance required to limit di/dt
Units Test Conditions
during gamma-dot
LET (Si) Fluence Range VDS Bias VGS Bias
5
~41 -200 5
Page 4
IRHM9230 Device Radiation Characteristics
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Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = -50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I
Peak IL = -6.5A, VGS = -12V, 25 ≤ R
2
L
) * [B
VDSS
/(B
VDSS-VDD
G
)]
≤ 200 Ω
ISD ≤ -6.5A, di/dt ≤ -140 A/µs,
VDD ≤ B
Suggested RG = 2.35Ω
VDSS
, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
Case Outline and Dimensions
LEGEND
1 DRAIN
2 SOURCE
3 GATE
NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982
2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and (Inches)
Total Dose Irradiation with VGS Bias.
-12 volt V
irradiation per MIL-STD-750, method 1019.
applied and VDS = 0 during
GS
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated B
applied and V
MlL-STD-750, method 1019.
GS
(pre-radiation)
VDSS
= 0 during irradiation per
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process character ized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Optional leadforms for outline TO-254
LEGEND
1 DRAIN
2 SOURCE
3 GATE
NOTES:
1 DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M-1982
2 ALL DIMENSIONS ARE SHOWN IN
MILLIMETERS (INCHES)
3 LEADFORM IS AVAILABLE IN EITHER
ORIENTATION:
Example: 3.1 IRHM7160D
3.2 IRHM7160U
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide
packages shall not be placed in acids that will produce fumes
containing beryllium.
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CA UTION
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
http://www.irf.com/ Data and specifications subject to change without notice. 4/96
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