Datasheet IRHM7064, IRHM8064 Datasheet (International Rectifier)

Provisional Data Sheet No. PD-9.1564

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REPETITIVE A V ALANCHE AND dv/dt RATED

HEXFET

60 Volt, 0.021

International Rectifier’s RAD HARD technology HEXFET s
demonstrate virtual immunity to SEE failure. Addition­ally , under identical pre- and post-radiation test condi­tions, International Rectifier’s RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 10
(Si) total dose. No compensation in gate drive circuitry is
required. These devices are also capable of surviving
transient ionization pulses as high as 1 x 10
Sec, and return to normal operation within a few micro­seconds. Since the RAD HARD process utilizes Interna­tional Rectifier’s patented HEXFET technology , the user
can expect the highest quality and reliability in the indus­try .

RAD HARD HEXFET transistors also feature all of the well­established advantages of MOSFETs, such as voltage con­trol, very fast switching, ease of paralleling and temperature
stability of the electrical parameters.

They are well-suited for applications such as switch­ing power supplies, motor controls, inverters, chop­pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.

®

TRANSISTOR

ΩΩ

Ω, MEGA RAD HARD HEXFET

ΩΩ

5

Rads

12

Rads (Si)/

Product Summary

Part Number BVDSS RDS(on) ID

IRHM7064 60V 0.021Ω 35A*
IRHM8064 60V 0.021Ω 35A*

Features:

■ Radiation Hardened up to 1 x 10

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Electrically Isolated

■ Ceramic Eyelets

IRHM7064
IRHM8064

N-CHANNEL

MEGA RAD HARD

6

Rads (Si)

Absolute Maximum Ratings

Pre-Radiation

Parameter IRHM7064, IRHM8064 Units

ID @ VGS = 12V , TC = 25°C Continuous Drain Current 35*

ID @ VGS = 12V , TC = 100°C Continuous Drain Current 35*

I

DM

PD @ TC = 25°C Max. Power Dissipation 250 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 4.5

T

J

T

STG

Notes: See page 4 *Current is limited by pin diameter

Pulsed Drain Current ➀ 284

Linear Derating Factor 2.0 W/K ➄
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy ➁ 500 m J
Avalanche Current ➀ 35 A
Repetitive Avalanche Energy ➀ 25 m J

Operating Junction -55 to 150
Storage T emperature Range

Lead Temperature
Weight 9.3 (typical) g

300 (0.063 in (1.6mm) from case for 10 sec.)

A

V/ns

o

C

IRHM7064, IRHM8064 Devices Pre-Radiation

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV
∆BV

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

DSS

DSS

Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0 mA

/∆TJTemperature Coefficient of Breakdown — 0.048 — V/°C Reference to 25°C, ID = 1.0 mA

Voltage
Static Drain-to-Source — — 0.021 VGS = 12V , ID = 35A
On-State Resistance Ω
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 18 — — S ( )VDS > 15V, IDS = 35A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
T otal Gate Charge — — 260 VGS =12V , ID = 35A
Gate-to-Source Charge — — 60 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 86
Turn-On Delay T ime — — 27 VDD = 30V , ID = 35A,
Rise Time — — 120 RG = 2.35Ω
Turn-Off Delay Time — — 76
Fall Time — — 93
Internal Drain Inductance — 8.7 —

Internal Source Inductance — 8.7 —

Input Capacitance — 7400 — VGS = 0V, VDS = 25V
Output Capacitance — 3200 — f = 1.0 MHz
Reverse Transfer Capacitance — 540 —

Ω

µA

nA

nC

ns

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

nH

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

pF

VGS = 0V, TJ = 125°C

Modified MOSFET
symbol showing the
internal inductances.

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — 35 Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode) ➀ — — 284 integral reverse p-n junction rectifier.

SM

V

Diode Forward Voltage — — 3.0 V Tj = 25°C, IS = 35A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 220 ns Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 1.1 µCV

RR

t

Forward T urn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R

thJC

R

thJ-PCB

R

thCS

Junction-to-Case — — 0.50
Junction-to-PC board — — 48

Case-to-Sink — 0.21 — typical socket mount

A

≤ 50V ➃

DD

+ LD.

S

K/W➄

IRHM7064, IRHM8064 Devices Radiation Characteristics

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Radiation Performance of Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability . The hard­ness assurance program at International Rectifier
uses two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a

bias condition equal to 80% of the device

V

DSS

rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10

5

Rads (Si)
are identical and are presented in Table 1, column
1, IRHM7064. The values in Table 1 will be met for ei­ther of the two low dose rate test circuits that are
used.

Table 1. Low Dose Rate ➅ ➆ IRHM7064 IRHM8064

BV

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)1

V

SD

Parameter

Drain-to-Source Breakdown V oltage 100 — 100 —
Gate Threshold Voltage ➃ 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0 mA
Gate-to-Source Leakage Forward — 1 00 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20V
Zero Gate Voltage Drain Current — 25 — 50 µAVDS = 0.8 x Max Rating, VGS = 0V
Static Drain-to-Source ➃ — 0.021 — 0.029 Ω VGS = 12V , ID = 35A
On-State Resistance One
Diode Forward V oltage ➃ — 3.0 — 3.0 V TC = 25°C, IS = 35A,VGS = 0V

100K Rads (Si) 1000K Rads (Si) Units Test Conditions ➉

min. max. min. max.

Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10

5

Rads (Si), no change in limits are specified in DC pa­rameters.

High dose rate testing may be done on a special re­quest basis, using a dose rate up to 1 x 10

12

Rads

(Si)/Sec.
International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.

V

nA

VGS = 0V , ID = 1.0 mA

VGS = 20V

Table 2. High Dose Rate ➇

Parameter Min. Typ Max. Min. Typ. Max. Units Test Conditions

V
I

di/dt — 800 — — 160 — A/µsec Rate of rise of photo-current
L

Drain-to-Source Voltage — — 48 — — 48 V Applied drain-to-source voltage

DSS

PP

1

Table 3. Single Event Effects ➈

Parameter Typ. Units Ion

BV

DSS

60 V Ni 28 1 x 10

1011 Rads (Si)/sec 1012 Rads (Si)/sec

— 140 — — 140 — A Peak radiation induced photo-current

0.1 — — 0.8 — — µH Circuit inductance required to limit di/dt

during gamma-dot

LET (Si) Fluence Range VDS Bias VGS Bias

(MeV/mg/cm

2

) (ions/cm2)(µm) (V) (V)

5

~41 60 -5

IRHM7064, IRHM8064 Devices Radiation Characteristics

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➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.
Refer to current HEXFET reliability report.

➁ @ V

➂ I

= 25V, Starting TJ = 25°C,

DD

EAS = [0.5 * L * (I
Peak IL = 35A, VGS = 12V, 25 ≤ RG ≤ 200Ω

≤ 35A, di/dt ≤ 170 A/µs,

SD
VDD ≤ BV
Suggested RG = 2.35Ω

, TJ ≤ 150°C

DSS

2

) * [BV

L

DSS

/(BV

DSS-VDD

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ K/W = °C/W

W/K = W/°C

)]

➅ Total Dose Irradiation with V

➆ Total Dose Irradiation with V

➇ This test is performed using a flash x-ray

➈ Process characterized by independent laboratory.
➉ All Pre-Radiation and Post-Radiation test

Case Outline and Dimensions – TO-254AA

3

2

1

Conforms to JEDEC Outline TO-254AA

Bias.

+12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.

VDS = 0.8 rated BV
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.

source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.

conditions are identical to facilitate direct
comparison for circuit applications.

DSS

GS

Bias.

DS

(pre-radiation)

Optional leadforms for outline TO-254

CAUTION

BERYLLIA W ARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, ma­chined, or have other operations performed on them which will pro­duce beryllia or beryllium dust. Furthermore, beryllium oxides pack­ages shall not be placed in acids that will produce fumes containing
beryllium.

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

Legend:

1 - Drain
2 - Source
3 - Gate

Notes:

1. Dimensioning and Tolerancing per
ANSI Y14.5M-1982

2. All dimensions are shown in millimeters (inches).

3. Leadform is available in either orientation.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

http://www.irf.com/ Data and specifications subject to change without notice. 10/96