Page 1
Provisional Data Sheet No. PD-9.882A
Next Data SheetIndex
Previous Datasheet
To Order
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSIST OR
[REF: MIL-PRF-19500/630]
-100 Volt, 0.30
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold v oltage stability
and breakdown voltage stability at total radiation doses as
high as 10
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications
up to 1 x 10
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the RAD
HARD process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weapons environments.
5
ΩΩ
Ω, RAD HARD HEXFET
ΩΩ
Rads (Si). Under identical pre- and post-radia-
5
Rads (Si) total dose. No compensation in gate
Product Summary
Part Number BVDSS RDS(on) ID
IRHF9130 -100V 0.30 Ω -6.5A
Features:
n Radiation Hardened up to 1 x 10
n Single Event Burnout (SEB) Hardened
12
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolera nt
n Identical Pre- and Post-Electrical Test Conditions
n Avalanche Energy Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter IRHF9130 Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -6.5
ID @ VGS = -12V , TC = 100°C Continuous Drain Current -4.1
I
DM
PD @ TC = 25°C Max. Power Dissipation 25 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.5
T
J
T
STG
Pulsed Drain Current -26
Linear Derating Factor 0.2 W/K
Gate-to-Source V oltage ±20 V
Single Pulse Avalanche Energy 165 mJ
Avalanche Current -6.5 A
Repetitive Avalanche Energy 2.5 mJ
Operating Junction -55 to 150
Storage T emperature Range
Lead T emperature 300
Weight 0.98 (typical) g
(0.063 in (1.6 mm) from case for 10 sec.)
IRHF9130
JANSR2N7389
P-CHANNEL
RAD HARD
5
Rads (Si)
Pre-Radiation
A
V/ns
o
C
Page 2
IRHF9130 Device Pre-Radiation
Next Data SheetIndex
Previous Datasheet
To Order
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0 mA
/∆TJTemperature Coefficient of Breakdown — -0.087 — V/°C Reference to 25°C, ID = -1.0 mA
Voltage
Static Drain-to-Source — — 0.30 VGS = 12V, ID =-4.1A
On-State Resistance — — 0.325 Ω VGS = 12V, ID = -6.5A
Gate Threshold V oltage -2.0 — -4.0 V VDS = VGS, ID = -1.0 mA
Forw ard Tr ansconductance 2.5 — — S ( )VDS ≥ -15V, IDS = -4.1A
Zero Gate Voltage Drain Current — — -25 VDS = 0.8 x Max Rating,VGS = 0V
— — -250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS = 20V
Total Gate Charge — — 35 VGS =-12V, ID = -6.5A
Gate-to-Source Charge — — 10 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 25
Turn-On Delay Time — — 30 VDD = -50V, ID = -6.5A,
Rise Time — — 70 RG = 7.5Ω
Turn-Off Delay Time — — 70
Fall Time — — 70
Internal Drain Inductance — 5.0 —
Internal Source Inductance — 13 —
Input Capacitance — 1100 — VGS = 0V, VDS = -25V
Output Capacitance — 310 — f = 1.0 MHz
Reverse Transfer Capacitance — 55 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — -6.5 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) — — -26 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — -3.0 V Tj = 25°C, IS = -6.5A, VGS = 0V
SD
t
Reverse Recovery Time — — 250 ns Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs
rr
Q
Reverse Recovery Charge — — 2.6 µCV
RR
t
Forward T urn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled b y LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
thJC
thJA
Junction-to-Case — — 5.0
Junction-to-Ambient — — 175
A
≤ -50V
DD
K/W
Typical socket mount
Page 3
IRHF9130 Device Radiation Characteristics
To Order
Next Data SheetIndex
Previous Datasheet
Radiation Perf ormance of P-Channel Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Every m a nufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of -12 volts per note 6 and a
bias condition equal to 80% of the device
V
DSS
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10
5
Rads (Si)
are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
Table 1. Low Dose Rate IRHF9130
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
Drain-to-Source Breakdown Voltage -100 —
Gate Threshold V oltage -2.0 -4.0 VGS = VDS, ID = -1.0 mA
Gate-to-Source Leakage Forward — -100
Gate-to-Source Leakage Reverse — 100 VGS = 20V
Zero Gate Voltage Drain Current — -25 µAVDS = 0.8 x Max Rating, VGS = 0V
Static Drain-to-Source — 0.30 Ω VGS = -12V, ID =-4.1A
On-State Resistance One
Diode Forward Voltage — -3.0 V TC = 25°C, IS = -6.5A,VGS = 0V
post-radiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 10
5
Rads (Si),
no change in limits are specified in DC parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier P-Channel radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
100K Rads (Si) Units Test Conditions
min. max.
V
nA
VGS = 0V, ID = -1.0 mA
VGS = -20V
12
Rads
Table 2. High Dose Rate
Parameter Min. Typ Max. Min. Typ. Max. Units Test Conditions
V
I
di/dt — — -800 — — -160 A/µsec Rate of rise of photo-current
L
Drain-to-Source Voltage — — -80 — — -80 V Applied drain-to-source voltage
DSS
PP
1
Table 3. Single Event Effects
Parameter Typ. Units Ion
BV
DSS
-100 V Ni 28 1 x 10
1011 Rads (Si)/sec 1012 Rads (Si)/sec
— -60 — — -60 — A Peak radiation induced photo-current
0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt
during gamma-dot
LET (Si) Fluence Range VDS Bias VGS Bias
(MeV/mg/cm
2
) (ions/cm2)(µm) (V) (V)
5
~41 -100 5
Page 4
IRHF9130 Device Radiation Characteristics
To Order
Next Data SheetIndex
Previous Datasheet
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ V
I
= -25V, Starting TJ = 25°C,
DD
EAS = [0.5 * L * (I
Peak IL = -6.5A, VGS = -12V, 25 ≤ RG ≤ 200Ω
≤ -6.5A, di/dt ≤ -140 A/µs,
SD
VDD ≤ BV
Suggested RG = 7.5Ω
, TJ ≤ 150°C
DSS
2
) * [BV
L
DSS
/(BV
DSS-VDD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
)]
Total Dose Irradiation with V
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with V
VDS = 0.8 rated BV
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-r ay
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process character ized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — TO-204AF (TO-39)
(pre-radiation)
DSS
GS
DS
Bias.
Bias.
All dimensions in millimeters (inches.)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
http://www.irf.com/ Data and specifications subject to change without notice. 4/96
Loading...