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PD - 93857A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF57230SE 100K Rads (Si) 0.24Ω 7.0A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
2
)). The combination
IRHF57230SE
200V, N-CHANNEL
TECHNOLOGY
44
#
c
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 7.0
ID @ VGS = 12V , TC = 100°C Continuous Drain Current 4.5
I
DM
PD @ TC = 25°C Max. P ower Dissipation 25 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recov ery dv/dt ➂ 4.2
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ 28
Linear Derating Factor 0.2 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 130 mJ
Avalanche Current ➀ 7.0 A
Repetitive Av alanche Energy ➀ 2.5 mJ
Operating Junction -55 to 150
Storage T emperature Range
Lead Temperature 300 ( 0.063 in./1.6mm from case for 10s)
Weight 0.98(Typical) g
Pre-Irradiation
A
V/ns
o
C
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IRHF57230SE Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
D
bonded from Source Pin to Drain Pad
C
iss
C
oss
C
rss
Drain-to-Source Breakdown V oltage 200 — — V VGS = 0V, ID = 1.0mA
/∆TJT emperature Coefficient of Breakdown — 0.26 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.24 Ω VGS = 12V, ID = 4.5A
Resistance
Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0mA
Forward T ransconductance 4.2 — — S ( )VDS > 15V, IDS = 4.5A ➃
Zero Gate V oltage Drain Current — — 10 VDS= 160V ,VGS=0V
——25 VDS = 160V,
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
T otal Gate Charge — — 47 VGS =12V, ID = 7.0A
Gate-to-Source Charge — — 12 nC VDS = 100V
Gate-to-Drain (‘Miller’) Charge — — 16
T urn-On Delay Time — — 21 VDD = 100V , ID = 7.0A
Rise Time — — 37 VGS =12V, RG = 7.5Ω
Turn-Off Delay Time — — 2 9
Fall Time — — 29
T otal Inductance — 7.0 — Measured from Drain lead (6mm /0.25in.
from package) with Source wires internally
Input Capacitance — 1014 — VGS = 0V, VDS = 25V
Output Capacitance — 182 — pF f = 1.0MHz
Reverse T ransf er Capacitance — 8.8 —
Ω
µA
VGS = 0V, TJ = 125°C
nA
ns
nH
from package) to Source lead (6mm /0.25in.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 7.0
S
I
Pulse Source Current (Body Diode) ➀ —— 28
SM
V
Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 7.0A, VGS = 0V ➃
SD
t
Reverse Recov ery Time — — 274 ns Tj = 25°C, IF = 7.0A, di/dt ≥ 100A/µs
rr
Q
Reverse Recovery Charge — — 2.2 µCV
RR
t
Forward T urn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
≤ 25V ➃
DD
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
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Junction-to-Case — — 5.0
Junction-to-Ambient — 175 — Typical socket mount
°C/W
+ LD.
S
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Radiation Characteristics
IRHF57230SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability .
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
T able 1. Electrical Characteristics @ Tj = 25°C, Post T otal Dose Irradiation ➄➅
Parameter 100K Rads (Si) Units Test Conditions
Min Max
BV
V
I
I
I
R
R
V
GS(th)
GSS
GSS
DSS
DS(on)
DS(on)
SD
Drain-to-Source Breakdown V oltage 200 —
DSS
Gate Threshold Voltage 2.0 4.5 VGS = VDS, ID = 1.0mA
Gate-to-Source Leakage Forward — 100
Gate-to-Source Leakage Reverse — -100 VGS = -20V
Zero Gate V oltage Drain Current — 10 µA VDS= 160V, VGS=0V
Static Drain-to-Source
On-State Resistance (TO-3) — 0.222 Ω VGS = 12V, ID = 4.5A
Static Drain-to-Source
On-State Resistance (TO-39) — 0.24 Ω VGS = 12V, ID = 4.5A
Diode Forward V oltage — 1.5 V VGS = 0V, ID = 7.0A
V
nA
VGS = 0V, ID = 1.0mA
VGS = 20V
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
T able 2. Single Event Effect Safe Operating Area
Io n LET Energy Range
MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br 36.7 309 39.5 200 200 200 200 200
I 59.8 341 32.5 200 200 200 185 120
Au 82.3 350 28.4 200 200 150 50 25
250
200
150
VDS
100
50
0
0 -5 -10 -15 -20
VGS
VDS (V)
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHF57230SE Pre-Irradiation
100
10
1
Drain-to-Source Current (A)
’
D
0.1
I
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
5.0V
5.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
5.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
5.0V
°
Fig 2. Typical Output Characteristics
2.5
7.0A
I =
D
2.0
°
T = 150 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
15
V = 50V
DS
0.1
4 6 8 10 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
12V
Vs. Temperature
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Pre-Irradiation
IRHF57230SE
2000
1600
1200
800
C, Capacitance (pF)
400
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
7.0A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
V = 160V
DS
V = 100V
DS
V = 40V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
13
10
°
T = 150 C
J
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
SD
°
T = 25 C
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 150°C
Single Pulse
0.1
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µs
1ms
1
0ms
Forward Voltage
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IRHF57230SE Pre-Irradiation
8.0
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
Thermal Response (Z )
0.20
1
0.10
0.05
0.02
0.01
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 7
A
Pre-Irradiation
IRHF57230SE
15V
DRIVER
+
-
R
V
G
V
20V
GS
DS
L
D.U.T
.
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
300
TOP
BOTTOM
200
V
DD
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
I
D
3.1A
4.4A
7.0A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
12 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
-
D
Fig 13b. Gate Charge Test Circuit
V
DS
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IRHF57230SE Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ V
= 50V , starting TJ = 25°C, L= 5.3mH
DD
Peak IL = 7.0A, VGS = 12V
➂ I
≤ 7.0A, di/dt ≤ 219A/µs,
SD
VDD ≤ 200V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with V
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ T otal Dose Irradiation with V
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
DS
GS
Bias.
Bias.
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
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