Page 1
PD -
93788
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF57230 100K Rads (Si) 0.22Ω 7.3A
IRHF53230 300K Rads (Si) 0.22Ω 7.3A
IRHF54230 600K Rads (Si) 0.22Ω 7.3A
IRHF58230 1000K Rads (Si) 0.275Ω 7.3A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
2
)). The combination
IRHF57230
200V, N-CHANNEL
TECHNOLOGY
RR
5
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 7.3
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 4.5
I
DM
PD @ TC = 25°C Max. Power Dissipation 25 W
V
GS
E
AS
I
AR
E
AR
dv/d t Peak Diode Recovery dv/dt ➂ 7.0
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ 29
Linear Derating Factor 0.2 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 110 mJ
Avalanche Current ➀ 7.3 A
Repetitive Avalanche Energy ➀ 2.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 0.98 (Typical) g
Pre-Irradiation
A
V/ns
o
C
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Page 2
IRHF57230 Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
D
bonded from Source Pin to Drain Pad
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.25 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.22 Ω VGS = 12V, ID = 4.5A
Resistance
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
Forward Transconductance 7.0 — — S ( )VDS > 15V, IDS = 4.5A ➃
Zero Gate Voltage Drain Current — — 1 0 VDS= 160V ,VGS=0V
——25 VDS = 160V,
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 50 VGS =12V, ID = 7.3A
Gate-to-Source Charge — — 7.4 nC VDS = 100V
Gate-to-Drain (‘Miller’) Charge — — 2 0
Turn-On Delay Time — — 25 VDD = 100V, ID = 7.3A
Rise Time — — 100 RG = 7.5Ω
Turn-Off Delay Time — — 35
Fall Time — — 30
T otal Inductance — 7.0 — Measured from Drain lead (6mm /0.25in.
from package) with Source wires internally
Input Capacitance — 1030 — VGS = 0V , VDS = 25V
Output Capacitance — 187 — pF f = 1.0MHz
Reverse Transfer Capacitance — 18 —
Ω
µA
VGS = 0V, TJ = 125°C
nA
ns
nH
from package) to Source lead (6mm /0.25in.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 7.3
S
I
Pulse Source Current (Body Diode) ➀ —— 29
SM
VSDDiode Forward Voltage — — 1.5 V Tj = 25°C, IS = 7.3A, VGS = 0V ➃
t
Reverse Recovery Time — — 262 ns Tj = 25°C, IF = 7.3A, di/dt ≥ 100A/µs
rr
Q
Reverse Rec overy Charge — — 1.81 µCV
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
≤ 25V ➃
DD
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 5.0
Junction-to-Ambient — — 175 Typical socket mount
°C/W
+ LD.
Page 3
Radiation Characteristics
Pre-Irradiation IRHF57230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability .
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter Up to 600K Rads(Si)
BV
1. Part numbers IRHF57230, IRHF53230 and IRHF54230
2. Part number IRHF58230
Drain-to-Source Breakdown Voltage 200 — 200
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Gate Threshold Voltage ➃ 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA
Gate-to-Source Leakage Forward — 100 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
Zero Gate Voltage Drain Current — 10 — 10 µA VDS= 160V, V
Static Drain-to-Source ➃ — 0.204 — 0.255 Ω VGS = 12V, ID =4.5A
On-State Resistance (TO-3)
Static Drain-to-Source ➃ — 0.22 — 0.275 Ω VGS = 12V, ID =4.5A
On-State Resistance (TO-39)
Diode Forward Voltage ➃ — 1.5 — 1.5 V VGS = 0V, IS = 7.3A
Min Max Min Max
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
1
1000K Rads (Si)2
—
Units
Test Conditions
VGS = 0V, ID = 1.0mA
V
nA
VGS = 20V
GS
=0V
T able 2. Single Event Effect Safe Operating Area
Io n LE T Energy Range
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br 36.7 309 39.5 200 200 150 100 50
I 59.8 341 32.5 200 100 40 35 30
Au 82.3 350 28.4 50 35 25 — —
VDS (V)
250
200
150
VDS
100
50
0
0 - 5 - 10 -15 -20
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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Page 4
IRHF57230 Pre-Irradiation
100
10
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
5.0V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
100
T = 25 C
J
J
°
100
10
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
5.0V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
7.3A
2.0
°
T = 150 C
J
10
D
I , Drain-to-Source Current (A)
V = 50V
DS
15
1
5 6 7 8 9 10 11
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
12V
Vs. Temperature
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Page 5
Pre-Irradiation IRHF57230
1800
1500
1200
900
600
C, Capacitance (pF)
300
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C SHORTED
C
C
+ C
C
iss
C
oss
C
rss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
7.3A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
V = 160V
DS
V = 100V
DS
V = 40V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
13
10
°
T = 150 C
J
1
SD
I , Reverse Drain Current (A)
0.1
0.0 0.5 1.0 1.5 2.0 2.5
V ,Source-to-Drain Voltage (V)
SD
°
T = 25 C
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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Page 6
IRHF57230 Pre-Irradiation
R
D.U.T.
D
+
V
DD
-
8.0
6.0
4.0
V
DS
V
GS
R
G
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
I , Drain Current (A)
2.0
Fig 10a. Switching Time Test Circuit
V
DS
90%
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
°
10%
V
GS
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
thJC
0.20
1
0.10
0.05
1 2
P
DM
t
1
t
2
0.02
0.01
0.1
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 7
Pre-Irradiation IRHF57230
A
15V
DRIVER
+
-
R
G
12V
20V
V
DS
t
L
D.U.T
.
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
250
TOP
I
D
3.3A
4.6A
200
150
V
DD
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
7.3A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
12 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
-
D
Fig 13b. Gate Charge Test Circuit
V
DS
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Page 8
IRHF57230 Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ V
= 50V, star ting TJ = 25°C, L= 4.0 mH
DD
Peak IL = 7.3A, VGS = 12V
➂ I
≤ 7.3A, di/dt ≤ 320A/µs,
SD
VDD ≤ 200V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with V
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with V
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
GS
DS
Bias.
Bias.
Case Outline and Dimensions — T O-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 12/99
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