Page 1
PD - 93789A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF57130 100K Rads (Si) 0.08Ω 11.7A
IRHF53130 300K Rads (Si) 0.08Ω 11.7A
IRHF54130 600K Rads (Si) 0.08Ω 11.7A
IRHF58130 1000K Rads (Si) 0.10Ω 11.7A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
2
)). The combination
IRHF57130
100V, N-CHANNEL
TECHNOLOGY
RR
5
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 11.7
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.4
I
DM
PD @ TC = 25°C Max. Power Dissipation 25 W
V
GS
E
AS
I
AR
E
AR
dv/d t Peak Diode Recovery dv/dt ➂ 4.9
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ 47
Linear Derating Factor 0.2 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 173 mJ
Avalanche Current ➀ 11.7 A
Repetitive Avalanche Energy ➀ 2.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 0.98 (Typical) g
Pre-Irradiation
A
V/ns
o
C
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Page 2
IRHF57130 Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
D
bonded from Source Pin to Drain Pad
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.12 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.08 Ω VGS = 12V, ID = 7.4A
Resistance
Gate Threshold Voltage 2.0 — 4 . 0 V VDS = VGS, ID = 1.0mA
Forward Transconductance 8.7 — — S ( )VDS > 15V, IDS = 7.4A ➃
Zero Gate Voltage Drain Current — — 1 0 VDS= 80V ,VGS=0V
——25 VDS = 80V,
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 50 VGS =12V, ID = 11.7A
Gate-to-Source Charge — — 7.4 nC VDS = 50V
Gate-to-Drain (‘Miller’) Charge — — 20
Turn-On Delay Time — — 25 VDD = 50V, ID = 11.7A
Rise Time — — 100 RG = 7.5Ω
Turn-Off Delay Time — — 35
Fall Time — — 30
T otal Inductance — 7.0 — Measured from Drain lead (6mm /0.25in.
from package) with Source wires internally
Input Capacitance — 1038 — VGS = 0V , VDS = 25V
Output Capacitance — 362 — pF f = 1.0MHz
Reverse Transfer Capacitance — 45 —
Ω
µA
VGS = 0V, TJ = 125°C
nA
ns
nH
from package) to Source lead (6mm /0.25in.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 11.7
S
I
Pulse Source Current (Body Diode) ➀ —— 47
SM
VSDDiode Forward Voltage — — 1.5 V Tj = 25°C, IS = 11.7A, VGS = 0V ➃
t
Reverse Recovery Time — — 202 ns Tj = 25°C, IF = 11.7A, di/dt ≥ 100A/µs
rr
Q
Reverse Recovery Charge — — 982 µCV
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
≤ 25V ➃
DD
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
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Junction-to-Case — — 5.0
Junction-to-Ambient — — 175 Typical socket mount
°C/W
+ LD.
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Radiation Characteristics
Pre-Irradiation IRHF57130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability .
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter Up to 600K Rads(Si)
BV
Drain-to-Source Breakdown Voltage 100 — 100
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Gate Threshold Voltage ➃ 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA
Gate-to-Source Leakage Forward — 100 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
Zero Gate Voltage Drain Current — 10 — 10 µA VDS= 80V, V
Static Drain-to-Source ➃ — 0.064 — 0.08 Ω VGS = 12V, ID =7.4A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source ➃ — 0.08 — 0.10 Ω VGS = 12V, ID =7.4A
On-State Resistance (TO-39)
V
SD
1. Part numbers IRHF57130, IRHF53130 and IRHF54130
2. Part number IRHF58130
Diode Forward Voltage ➃ — 1.5 — 1.5 V VGS = 0V, IS = 11.7A
Min Max Min Max
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
1
1000K Rads (Si)2
—
V
Units
Test Conditions
VGS = 0V, ID = 1.0mA
nA
VGS = 20V
GS
=0V
T able 2. Single Event Effect Safe Operating Area
Io n LE T Energy Range
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br 36.7 309 39.5 100 100 100 100 100
I 59.8 341 32.5 100 100 100 35 25
Au 82.3 350 28.4 100 100 80 25 —
VDS (V)
120
100
VGS
80
60
40
20
0
-20-15-10-50
VDS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHF57130 Pre-Irradiation
1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
5.0V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
J
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
5.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
5.0V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
11.7A
°
T = 25 C
J
100
T = 150 C
J
10
D
I , Drain-to-Source Current (A)
V = 50V
15
DS
1
5 7 9 11 13 15
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
12V
Vs. Temperature
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Page 5
Pre-Irradiation IRHF57130
)
2000
1600
1200
800
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
f = 1MHz
C
+ C
C
C
+ C
C
iss
C
oss
C SHORTED
C, Capacitance (pF)
400
C
rss
0
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
11.7A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
V = 80V
DS
V = 50V
DS
V = 20V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
13
°
T = 25 C
10
J
°
T = 150 C
J
100
OPERATION IN THIS AREA LIMITED
BY R
DS(ON
10
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
, Drain Current (A)
D
I
1
Tc = 25°C
Tj = 150°C
10ms
Single Pulse
0.1
1 10 100 1000
V
Drain-to-Source Voltage (V)
DS,
Fig 8. Maximum Safe Operating Area
Forward Voltage
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Page 6
IRHF57130 Pre-Irradiation
12
10
8
6
4
D
I , Drain Current (A)
2
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
0.20
1
0.10
0.05
1 2
P
DM
t
1
t
2
0.02
0.01
0.1
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 7
Pre-Irradiation IRHF57130
A
15V
DRIVER
+
-
R
V
G
12V
20V
DS
L
D.U.T
.
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
400
TOP
I
D
5.2A
7.4A
320
240
V
DD
160
80
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
11.7A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
12 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
-
D
Fig 13b. Gate Charge Test Circuit
V
DS
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IRHF57130 Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ V
= 50V, star ting TJ = 25°C, L= 2.53 mH
DD
Peak IL = 11.7A, VGS = 12V
➂ I
≤ 11.7A, di/dt ≤ 216A/µs,
SD
VDD ≤ 100V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with V
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with V
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
GS
DS
Bias.
Bias.
Case Outline and Dimensions — T O-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 3/00
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