Datasheet irgs6b60k Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

PD - 94575

IRGB6B60K IRGS6B60K

IRGSL6B60K

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Positive VCE (on) Temperature Coefficient.

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

C

G

E

n-channel

TO-220AB

IRGB6B60K

V

= 600V

CES

IC = 7.0A, TC=100°C tsc > 10µs, TJ=150°C V

D2Pak

IRGS6B60K

CE(on)

typ. = 1.8V

IRGSL6B60K

TO-262

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 13 A IC @ TC = 100°C Continuous Collector Current 7.0 I

CM

I

LM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 90 W PD @ TC = 100°C Maximum Power Dissipation 36 T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 26 Clamped Inductive Load Current  26 Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Wt Weight ––– 1.44 ––– g

Junction-to-Case - IGBT ––– ––– 1.4 Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W Junction-to-Ambient, typical socket mount ––– ––– 62 Junction-to-Ambient (PCB Mount, steady state) ––– ––– 40

www.irf.com 1

10/28/02

IRG/B/S/SL6B60K

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Collector-to-Emitter Breakdown Voltage 6 0 0 ––– ––– V VGE = 0V, IC = 500µA

/∆T

Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)

J

Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 V IC = 5.0A, VGE = 15V

––– 2.20 2.50 I

= 5.0A,VGE = 15V, TJ = 150°C

C

Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage – – – -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)

Forward Transconductance ––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs Zero Gate Voltage Collector Current ––– 1.0 150 µA VGE = 0V, VCE = 600V

––– 200 500 V

= 0V, VCE = 600V, TJ = 150°C

GE

Gate-to-Emitter Leakage Current ––– –– – ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Qg Total Gate Charge (turn-on) – – – 18.2 ––– IC = 5.0A Qge Gate - Emitter Charge (turn-on) ––– 1. 9 ––– nC VCC = 400V Qgc Gate - Collector Charge (turn-on) ––– 9.2 ––– VGE = 15V E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

RBSOA Reverse Bias Safe Operting Area FULL SQUARE

SCSOA Short Circuit Safe Operting Area 10 ––– – ––

Turn-On Switching Loss ––– 110 210 µJ IC = 5.0A, VCC = 400V Turn-Off Switching Loss ––– 135 245 VGE = 15V,RG = 100Ω, L =1.4mH Total Switching Loss ––– 245 455 Ls = 150nH TJ = 25°C  Turn-On Delay Time ––– 25 34 IC = 5.0A, VCC = 400V Rise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH Turn-Off Delay Time ––– 21 5 230 ns Ls = 150nH, TJ = 25°C Fall Time ––– 13.2 22 Turn-On Switching Loss ––– 150 260 IC = 5.0A, VCC = 400V Turn-Off Switching Loss ––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH Total Switching Loss ––– 340 560 Ls = 150nH TJ = 150°C  Turn-On Delay Time ––– 28 37 IC = 5.0A, VCC = 400V Rise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH Turn-Off Delay Time ––– 24 0 255 ns Ls = 150nH, TJ = 150°C Fall Time ––– 18 27 Input Capacitance ––– 290 ––– VGE = 0V Output Capacitance ––– 34 ––– pF VCC = 30V Reverse Transfer Capacitance ––– 10 ––– f = 1.0MHz

TJ = 150°C, IC = 26A, Vp =600V VCC = 500V, V

=+15V to 0V,

GE

µs TJ = 150°C, Vp =600V, RG = 100Ω

VCC = 360V, VGE = +15V to 0V

RG = 100Ω

Ref.Fig.

5, 6,7 8,9,10 8,9,10 11

Ref.Fig.

17

CT1

CT4

12,14

WF1WF2

13, 15

CT4 WF1 WF2

16

4 CT2 CT3

WF3

Note  to  are on page 13

2 www.irf.com

IRG/B/S/SL6B60K

15

10

) A

(

C

I

5

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

100

90 80 70 60

) W

(

50

t

o

t

P

40 30 20 10

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

100

10

) A

(

C

I

1

DC

0.1 1 10 100 1000 10000

V

(V)

CE

10 µs

100 µs

1ms

Fig. 3 - Forward SOA

TC = 25°C; T

≤ 150°C

J

10

) A

C

I

1

0

10 100 1000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 150°C; V

GE

=15V

www.irf.com 3

IRG/B/S/SL6B60K

20 18

VGE = 18V VGE = 15V

16

VGE = 12V

14

VGE = 10V VGE = 8.0V

12

) A

(

10

E C

I

8 6 4 2 0

0123456

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

20 18

VGE = 18V VGE = 15V

16

VGE = 12V

14

VGE = 10V VGE = 8.0V

12

) A

(

10

E C

I

8 6 4 2 0

0123456

V

(V)

CE

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

20 18

VGE = 18V VGE = 15V

16

VGE = 12V

14

VGE = 10V VGE = 8.0V

12

) A

(

10

E C

I

8 6 4 2 0

0123456

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

4 www.irf.com

IRG/B/S/SL6B60K

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5 101520

V

Fig. 8 - Typical V

GE

ICE = 3.0A I

CE

I

CE

(V)

vs. V

CE

= 5.0A = 10A

GE

TJ = -40°C

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5101520

V

Fig. 9 - Typical V

GE

CE

ICE = 3.0A I

CE

I

CE

(V)

vs. V

= 5.0A = 10A

GE

TJ = 25°C

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5101520

V

Fig. 10 - Typical V

GE

ICE = 3.0A I

CE

I

CE

(V)

CE

= 5.0A = 10A

vs. V

GE

TJ = 150°C

40 35

TJ = 25°C TJ = 150°C

30 25

) A

(

20

E C

I

15 10

TJ = 150°C

5

TJ = 25°C

0

0 5 10 15 20

V

(V)

GE

Fig. 11 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

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IRG/B/S/SL6B60K

700

600

500

)

J

µ

400

(

y

g

r

e

300

n E

200

100

0

0 5 10 15 20

E

ON

IC (A)

Fig. 12 - Typ. Energy Loss vs. I

TJ = 150°C; L=1.4mH; VCE= 400V

RG= 100Ω; VGE= 15V

250

E

OFF

1000

td

OFF

)

s

100

n

( e m

i T

g

n

i

h

c

i w S

C

t

F

td

ON

t

10

R

1

0 5 10 15 20

IC (A)

Fig. 13 - Typ. Switching Time vs. I

C

TJ = 150°C; L=1.4mH; VCE= 400V

RG= 100Ω; VGE= 15V

1000

td

t

R

t

F

OFF

ON

G

E

200

)

150

J

µ

( y

g

r

e

n

100

E

50

0

0 50 100 150 200

OFF

RG (Ω)

E

ON

Fig. 14 - Typ. Energy Loss vs. R TJ = 150°C; L=1.4mH; VCE= 400V

ICE= 5.0A; VGE= 15V

)

s

100

n

( e m

i T

g

n

i

h

c

i w

10

S

1

0 50 100 150 200

RG (Ω)

G

Fig. 15 - Typ. Switching Time vs. R

TJ = 150°C; L=1.4mH; VCE= 400V

ICE= 5.0A; VGE= 15V

6 www.irf.com

IRG/B/S/SL6B60K

τ

1000

Cies

)

100

F

p

( e

c

n

a

t

i

c

a

p

a

10

C

1

1 10 100

V

CE

Coes

Cres

(V)

Fig. 16- Typ. Capacitance vs. V

VGE= 0V; f = 1MHz

10

CE

16 14

300V

12 10

)

V

(

8

E G

V

6 4 2 0

0 5 10 15 20

Q G, Total Gate Charge (nC)

Fig. 17 - Typical Gate Charge vs. V

I

= 5.0A; L = 600µH

CE

400V

GE

)

C

1

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.1

0.01

D = 0.50

0.20

0.10

0.05

0.01

0.02

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

Ci= τi/Ri

R

1

R

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.708 0.00022

τ

3

0.447 0.00089

τ

3

0.219 0.01037

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1

t1 , Rectangular Pulse Duration (sec)

Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

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IRG/B/S/SL6B60K

L

0

1K

DUT

VCC

80 V

L

+

-

DUT

480V

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Driver

DC

360V

DUT

Fig.C.T.2 - RBSOA Circuit

diode clamp /

DUT

- 5V

Rg

L

DUT /

DRIVER

VCC

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

V

CC

R =

I

CM

DUT

Rg

VCC

Fig.C.T.5 - Resistive Load Circuit

8 www.irf.com

IRG/B/S/SL6B60K

r

450 400 350

90% I

300

CE

250

(V)

200

CE

V

150 100

tf

5% V

CE

5% I

CE

50

0

-50

Eoff Loss

-0.20 0.30 0.80

time(µs)

Fig. WF1- Typ. Turn-off Loss Waveform

@ TJ = 150°C using Fig. CT.4

500

9

500

25

8

(V)

CE

V

400

300

200

100

TEST CURRENT

90% test current

t

10% test current

5% V

7 6 5 4

(A)

CE

I

3 2 1

0

-1

-100

Eon Los s

20

15

10

(A)

CE

I

5

CE

0

-5

16.00 16.10 16.20 16.30 16.40

time (µs)

Fig. WF2- Typ. Turn-on Loss Waveform

@ TJ = 150°C using Fig. CT.4

50

400

V

CE

I

300

(V)

CE

V

200

100

0

-5.00 0.00 5.00 10.00 15.00

CE

time (µS)

40

30

20

10

0

(A)

CE

I

Fig. WF3- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3

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IRG/B/S/SL6B60K

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

F

1

0

1

0

L

O

T

C

O

D

E

1

7

8

9

A

S

E

M

B

L

E

D

O

N

W

1

9

,

1

9

7

I

N

T

H

E

A

S

E

M

B

L

Y

L

I

N

E

"

C

"

I

N

T

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R

N

A

T

I

O

N

A

L

R

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C

T

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F

I

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R

L

O

G

O

A

S

E

M

B

L

Y

L

O

T

C

O

D

E

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

Y

E

A

R

7

=

1

9

7

W

E

K

1

9

L

I

N

E

C

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DI MENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT I NC LUD E BURR S.

2X

10.29 (.405)

4

1 2 3

3X

0.36 (.014) M B A M

6.47 (.255)

6.10 (.240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

HEXFET

1- GATE 2- DRAIN 3- SOURCE 4- DRAIN

3X

LEAD ASSIGNMENTS

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.55 (.022)

0.46 (.018)

IGBTs, CoPACK

1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR

TO-220AB Part Marking Information

10 www.irf.com

D2Pak Package Outline

F

5

3

0

S

T

H

I

S

I

S

A

N

I

R

F

5

3

0

S

W

I

T

H

L

O

T

C

O

D

E

8

0

2

4

A

S

E

M

B

L

E

D

O

N

W

0

2

,

2

0

I

N

T

H

E

A

S

E

M

B

L

Y

L

I

N

E

"

L

"

A

S

E

M

B

L

Y

L

O

T

C

O

D

E

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

Y

E

A

R

0

=

2

0

W

E

K

0

2

L

I

N

E

L

IRG/B/S/SL6B60K

D2Pak Part Marking Information

www.irf.com 11

IRG/B/S/SL6B60K

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

L

3

1

0

3

L

O

T

C

O

D

E

1

7

8

9

A

S

E

M

B

L

Y

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

W

E

K

1

9

L

I

N

E

C

L

O

T

C

O

D

E

Y

E

A

R

7

=

1

9

7

A

S

E

M

B

L

E

D

O

N

W

1

9

,

1

9

7

I

N

T

H

E

A

S

E

M

B

L

Y

L

I

N

E

"

C

"

L

O

G

O

R

E

C

T

I

F

I

E

R

I

N

T

E

R

N

A

T

I

O

N

A

L

TO-262 Package Outline

IGBT

1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR

TO-262 Part Marking Information

12 www.irf.com

D2Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

IRG/B/S/SL6B60K

0.368 (.0145)

0.342 (.0135)

15.42 (.609)

15.22 (.601)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

60.0 0 (2.362) MIN.

30.40 (1.197) MAX.

4

Notes:



VCC= 80% (V

), VGE =15V, L = 28µH, RG = 22Ω

CES

 This is only applied to TO-220AB package  This is applied to D

For recommended footprint and soldering techniques refer to application note #AN-994.

2

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

 Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE.

TO-220 package is not recommended for Surface Mount Application

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 10/02

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