Datasheet IRGS4615DPBF Specification

IRGS4615DPbF

→

IRGB4615DPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V

= 600V

CES

I

= 15A, TC = 100°C

C

tsc > 5µs, T

V

CE(on) typ.

jmax

= 1.55V @ 8A

= 175°C

G

n-channel

C

G

E

D2-Pak

IRGS4615DPbF

GCE

Applications

• Appliance Drives

• Inverters

• UPS

Features Benefits

Low V

Square RBSOA and maximum junction temperature 175°C

Positive V parameters 5μs short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environmentally friendly

and switching losses

CE(ON)

temperature coefficient and tighter distribution of

CE(ON)

Gate Collector Emitter

High efficiency in a wide range of applications and switching frequencies

Improved reliability due to rugged hard switching performance and higher power capability

Excellent current sharing in parallel operation

C

E

C

G

TO-220AB

IRGB4615DPbF

Base part number Package Type Orderable Part Number

IRGS4615DPbF Tube 50 IRGS4615DPbF IRGS4615DTRRPbF Tape and Reel Right 800 IRGS4615DTRRPbF IRGS4615DTRLPbF Tape and Reel Left 800 IRGS4615DTRLPbF

IRGB4615DPbF TO-220AB Tube 50 IRGB4615DPbF

D

2

PAK

Standard Pack

Form Quantity

Absolute Maximum Ratings

Parameter Max. Units

V

CES

I

@ TC = 25°C Continuous Collector Current

C

I

@ TC = 100°C Continuous Collector Current

C

I

CM

I

LM

I

=25°C Diode Continuous Forward Current

F@TC

I

=100°C Diode Continuous Forward Current

F@TC

I

FM

V

GE

P

@ TC =25° Maximum Power Dissipation W

D

P

@ TC =100° Maximum Power Dissipation

D

T

J

T

STG

Collector-to-Emitter Breakdown Voltage V

Pulsed Collector Current, VGE = 15V

Clamped Inductive Load Current, VGE = 20V

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage V Transient Gate-to-Emitter Voltage

Operating Junction and

Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw TO-220

f

c

600

23

15

24

32

14

9

32 ± 20 ± 30

99

50

-40 to + 175

300

10lbf. In (1.1 N.m)

A

°C

IRGS/B4615DPbF

Δ

GE

Δ

CE

Energy losses include tail and diode reverse recovery

CC

θ

Thermal Resistance, Junction-to-Case -(each IGBT)

θ

Thermal Resistance, Junction-to-Case -(each Diode)

θ

Thermal Resistance, Junction-to-Ambient (PCB mount D

PAK)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

JC

R

JC

R

CS

R

θJA

Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.5 –––

Thermal Resistance, Junction-to-Ambient ( Socket mount: TO-220)

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR )CES

V

(BR)CES

Collector-to-Emitter Breakdown Voltage 600 — — V

/ΔTJTemperature Coeff. of Breakdown Voltage — 0.3 — V/°C

—1.551.85

V

CE(on)

Collector-to-Emitter Saturation Voltage — 1.95 — V

—2.00—

V

GE( th)

V

GE(th)

Gate Threshold Voltage 4.0 — 6.5 V

/ΔTJ Threshold Voltage temp. coefficient —

-18 gfe Forward Transconductance — 5.6 — S I

V

I

CES

FM

GES

Collector-to-Emitter Leakage Current

Diode Forward Voltage Drop

Gate-to-Emitter Leakage Current — — ±100 nA

——25μA

—400— — 1.80 2.8 V —1.30—

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

Q Q Q E E E t

d(on)

t

r

t

d(off)

t

f

E E E t

d(on)

t

r

t

d(off)

t

f

C C C

g

ge

gc

on

off

tot al

on

off

tot al

ies

oes

res

Total Gate Charge (turn-on) — 19 — IC = 8.0A Gate-to-Emitter Charge (turn-on) — 5 — nC VCC = 400V Gate-to-Collector Charge (turn-on) — 8 — VGE = 15V Turn-On Switching Loss — 70 — IC = 8.0A, VCC = 400V, VGE = 15V Turn-Off Switching Loss — 145 — μJRG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C Total Switching Loss — Turn-On delay time — Rise time — Turn-Off delay time — Fall time —

215

30 15 95

20 Turn-On Switching Loss — 165 — IC = 8.0A, VCC = 400V, VGE = 15V Turn-Off Switching Loss — 240 — μJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 175°C Total Switching Loss — Turn-On delay time — Rise time — Turn-Off delay time — Fall time —

405

28

17

117

35 Input Capacitance — 535 — VGE = 0V Output Capacitance — 45 — VCC = 30V Reverse Transfer Capacitance — 15 — f = 1Mhz

RBSOA Reverse Bias Safe Operating Area FULL SQUARE V

SCSOA Short Circuit Safe Operating Area —5 μs

Erec Reverse recovery energy of the diode trr

Diode Reverse recovery time

—

165

60

Irr Peak Reverse Recovery Current — 14 — A V

Notes:

 VCC = 80% (V  Rθ is measured at TJ approximately 90°C.  Refer to AN-1086 for guidelines for measuring V  Pulse width limited by max. junction temperature.

 Values influenced by parasitic L and C in measurement  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application

note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

), VGE = 20V, L = 100 μH, RG = 47 Ω.

CES

(BR)CES

safely.

d

2

h

––– ––– 1.51 ––– ––– 3.66

––– ––– 40 ––– ––– 62

V

—mV/°C

= 0V, Ic =100 μA

GE

V

= 0V, Ic = 250μA ( 25 - 1 75oC )

= 8.0A, VGE = 15V, TJ = 25°C

I

C

= 8.0A, VGE = 15V, TJ = 150°C

I

C

= 8.0A, VGE = 15V, TJ = 175°C

I

C

= VGE, IC = 250μA

V

CE

= VGE, IC = 250μA ( 25 -175oC )

V

= 50V, IC = 8.0A, PW =80μs

V

CE

= 0V,VCE = 600V

V

GE

= 0V, VCE = 600V, TJ =175°C

V

GE

= 8.0A

I

F

= 8.0A, TJ = 175°C

I

F

= ± 20 V

V

GE

e

Conditions

— — IC = 8.0A, VCC = 400V —nsRG = 47Ω, L=1mH, LS= 150nH —T

= 25°C

J

—

— — IC = 8.0A, VCC = 400V —nsRG = 47Ω, L=1mH, LS= 150nH —T

= 175°C

J

—

pF

T

= 175°C, IC = 32A

J

= 480V, Vp =600V

CC

R

= 47Ω, VGE = +20V to 0V

G

V

= 400V, Vp =600V

μJ ns V

CC

R

= 47Ω, VGE = +15V to 0V

G

T

= 175oC

J

= 400V, IF = 8.0A

= 15V, Rg = 47Ω, L=1mH, LS=150nH

GE

—

°C/W

g

IRGS/B4615DPbF

24

22

20

18

16

14

) A

(

12

C

I

10

8

6

4

2

0

25 50 75 100 125 150 175

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

100

10

) A

(

C

I

1

DC

10μs

100μs

1ms

110

100

90

80

70

) W

60

(

t o

t

50

P

40

30

20

10

0

25 50 75 100 125 150 175

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

100

) A

10

C

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000

VCE (V)

Fig. 3 - Forward SOA, TC = 25°C; T

30

25

20

) A

(

15

E C

I

10

5

0

02468

V

J

CE

≤ 175°C

VGE = 18V

VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

(V)

1

10 100 1000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 175°C; V

30

25

20

) A

(

15

E C

I

10

5

0

02468

= 15V

CE

VGE = 18V

VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80μs

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80μs

IRGS/B4615DPbF

30

VGE = 18V

VGE = 15V

25

VGE = 12V VGE = 10V VGE = 8.0V

20

) A

(

15

E C

I

10

5

0

02468

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 175°C; tp = 80μs

20

18

16

V

GE

(V)

ICE = 4.0A

I

= 8.0A

CE

I

= 16A

CE

vs. V

CE

GE

14

12

) V

(

10

E C

V

8

6

4

2

0

5101520

Fig. 9 - Typical V

TJ = -40°C

80

70

60

50

) A

(

40

F

I

30

20

10

0

0.0 1.0 2.0 3.0 4.0

-40°C 25°C 175°C

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80μs

20

18

16

V

GE

ICE = 4.0A

I

= 8.0A

CE

I

= 16A

CE

(V)

vs. V

CE

GE

14

12

) V

(

10

E C

V

8

6

4

2

0

5101520

Fig. 10 - Typical V

TJ = 25°C

20

18

16

V

GE

ICE = 4.0A

I

= 8.0A

CE

I

= 16A

CE

(V)

vs. V

CE

GE

14

12

) V

(

10

E C

V

8

6

4

2

0

5101520

Fig. 11 - Typical V

TJ = 175°C

35

30

25

)

20

A

(

E C

I

15

10

5

0

0 5 10 15

TJ = 25°C

TJ = 175°C

V

(V)

GE

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10μs

IRGS/B4615DPbF

500

450

400

350

) J

300

μ

(

y

250

g

r e n

200

E

150

100

50

0

0 5 10 15 20

E

Fig. 13 - Typ. Energy Loss vs. I

TJ = 175°C; L = 1mH; V

350

300

250

) J

μ

200

( y

g

r e

150

n E

100

50

OFF

E

ON

IC (A)

= 400V, RG = 47Ω; V

CE

E

OFF

E

ON

1000

) s

100

n

( e m

i T

g n

i h c

i w S

C

= 15V.

GE

td

OFF

t

F

td

ON

10

t

R

1

0 5 10 15 20

IC (A)

Fig. 14 - Typ. Switching Time vs. I

TJ = 175°C; L=1mH; VCE= 400V

C

RG= 47Ω; VGE= 15V

1000

) s n

( e m

i T

100

g n

i h c

i w S

td

t

OFF

ON

R

F

0

0 25 50 75 100 125

Fig. 15 - Typ. Energy Loss vs. R

TJ = 175°C; L = 1mH; V

30

25

20

) A

(

15

R R

I

10

5

0

0 5 10 15 20

Fig. 17 - Typical Diode I

TJ = 175°C

RG (Ω)

= 400V, I

CE

R

IF (A)

G =

10 Ω

22 Ω

47 Ω

100 Ω

RR

CE

vs. I

G

= 8A; V

F

GE

= 15V

10

0 25 50 75 100 125

RG (Ω)

Fig. 16- Typ. Switching Time vs. R

TJ = 175°C; L=1mH; VCE= 400V

25

20

15

) A

(

R R

I

10

5

0

0 25 50 75 100 125

Fig. 18 - Typical Diode I

ICE= 8A; VGE= 15V

RG (

Ω)

RR

TJ = 175°C; IF = 8.0A

vs. R

G

IRGS/B4615DPbF

25

20

15

) A

(

R R

I

10

5

0

0 500 1000

diF /dt (A/μs)

Fig. 19- Typical Diode I

vs. diF/dt

RR

VCC= 400V; VGE= 15V;

ICE= 8A; TJ = 175°C

500

450

400

350

) J

300

μ

( y

250

g

r e n E

10 Ω

200

22 Ω

150

47 Ω

100

100 Ω

50

0

0 5 10 15 20

IF (A)

1400

) C

n

(

Q

R R

1200

1000

800

600

100Ω

47

Ω

22Ω

400

200

0

0 500 1000 1500

diF /dt (A/μs)

Fig. 20 - Typical Diode Q

VCC= 400V; VGE= 15V; TJ = 175°C

18

16

14

12

10

Time (μs)

8

6

4

8 10 12 14 16 18

V

(V)

GE

10

8.0A

4.0A

RR

Ω

16A

80

70

60

50

40

Current (A)

30

20

10

Fig. 21 - Typical Diode E

TJ = 175°C

1000

)

100

F p

( e

c n a

t

i c a p a

10

C

RR

Cies

Coes

Cres

vs. I

F

Fig. 22- Typ. VGE vs Short Circuit Time

VCC=400V, TC =25°C

16

14

12

10

) V

(

8

E G

V

6

4

300V

400V

2

1

0 20 40 60 80 100

V

(V)

CE

Fig. 23- Typ. Capacitance vs. V

CE

VGE= 0V; f = 1MHz

0

0 5 10 15 20

Q G, Total Gate Charge (nC)

Fig. 24 - Typical Gate Charge vs. V

I

= 8A, L=600μH

CE

GE

IRGS/B4615DPbF

τι

(sec)

τ

τι

(sec)

τ

10

)

1

C J h

t Z (

e s n o p s e

R l a

m

r e h

0.01

T

0.001

D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

Ci= τi/Ri

1

Ci= τi/Ri

R

1

R

1

R

2

3

R

2

τ

2

τ

2

Ri (°C/W)

R

3

τ

C

0.555579 0.000216

τ

3

τ

3

0.590565 0.00117

0.365255 0.009076

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

)

C J h

t Z (

e s n o p s e

R l a

m

r e h T

0.1

0.01

D = 0.50

1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

Ci= τi/Ri

τ

1

Ci= τi/Ri

R

1

R

1

R

2

3

R

2

τ

2

τ

2

Ri (°C/W)

R

3

τ

C

0.821094 0.000233

τ

3

τ

3

1.913817 0.001894

0.926641 0.014711

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

IRGS/B4615DPbF

L

0

1K

DUT

VCC

80 V

+

-

Rg

DUT

480V

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - Typical Filter Circuit for

V

(BR)CES

Measurement

IRGS/B4615DPbF

tf

Loss

tr

IRRQRRt

RR

VCEI

CE

500

400

90% I

(V)

CE

V

300

200

5% I

CE

100

5% V

CE

0

E

Loss

OFF

-100

-0.40 0.10 0.60 1.10

Time(μs)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175°C using Fig. CT.4

25

20

15

10

5

0

-5

500

400

(V)

CE

V

300

200

100

90% test

10% test current

5% V

TEST

CE

0

E

ON

-100

11.70 11.90 12.10

Time (μs)

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175°C using Fig. CT.4

25

20

15

10

5

0

-5

15

10

5

0

(A)

RR

I

-5 Peak

10%

Peak

I

RR

-10

-15

-20

-0.05 0.05 0.15

time (μS)

WF.3- Typ. Reverse Recovery Waveform

@ TJ = 175°C using CT.4

500

400

300

(V)

200

CE

V

100

0

-100

-5.00 0.00 5.00 10.00

time (μ S)

WF.4- Typ. Short Circuit Waveform

@ TJ = 25°C using CT.3

100

80

60

40

20

0

-20

(A)

CE

I

IRGS/B4615DPbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

EXAMPLE : T HIS IS AN IRF1010

LOT CODE 1789 ASS E MBLE D ON WW 19, 2000 IN T HE ASS EMBL Y LINE "C"

Note: "P" in ass embly line position

indi cates "L ead - F r ee"

INTERNATIONAL

RECTIF IER

LOGO

AS S E MB L Y LOT CODE

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

PART NUMBER

DAT E CODE YEAR 0 = 2000 WE E K 19 LINE C

2

D

Pak Package Outline

Dimensions are shown in millimeters (inches)

IRGS/B4615DPbF

D2Pak Part Marking Information

THIS IS AN IRF530S WITH

LOT CODE 8024 ASS EMBLE D ON WW 02, 2000 IN THE ASSEMBLY LINE "L"

OR

INTERNAT IONAL

RECTIFIER

LOGO

AS S E M B L Y LOT CODE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

INTERNAT IONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

F530S

PART NUMBER

DAT E CODE P = DES IGNATES LEAD - FREE

YEAR 0 = 2000 WE E K 0 2 A = ASSEMBLY SITE CODE

PART NUMBER

DAT E CODE YEAR 0 = 2000 WE E K 0 2 LINE L

PRODUCT (OPT IONAL)

D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches))

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

IRGS/B4615DPbF

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

FEED DIRECTION

330.00 (14.173) MAX.

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

13.50 (.532)

12.80 (.504)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362) MIN.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

3

30.40 (1.197) MAX.

4

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRGS/B4615DPbF

Date

Comments

•

Updated package outline on page 10.

Qualification Information

Qualification Level

Moisture Sensitivity Level

RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release

†

Industrial

(per JEDEC JESD47F)

D2Pak

TO-220 N/A

††

MSL1

Revision History

11/ 14/ 2014

Added note fto IFM Diode Maximum Forward Current on page 1.

•

Added note

g

to switching losses test condition on page 2.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/