Datasheet IRGS4056DPBF Specification

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 96197

IRGS4056DPbF

Features

• Low V

• Low switching losses

• Maximum Junction temperature 175 °C

• 5 µS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (I

• Positive V

• Ultra fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead Free Package

Trench IGBT Technology

CE (ON)

Temperature co-efficient

CE (ON)

LM

)

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to Low V

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

and Low Switching losses

CE (ON)

G

n-channel

C

V

= 600V

CES

IC = 12A, TC = 100°C

tSC ≥ 5µs, T

E

C

GC E

Gate Collector Emitter

D2Pak

V

G

CE(on)

E

C

typ. = 1.55V

J(max)

= 175°C

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 24

IC @ TC = 100°C Continuous Collector Current 12

I

CM

I

LM

IF @ TC = 25°C Diode Continous Forward Current 24

IF @ TC = 100°C Diode Continous Forward Current 12

I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 140 W

PD @ TC = 100°C Maximum Power Dissipation 70

T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulse Collector Current 48

Clamped Inductive Load Current

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage ±20 V

Transient Gate-to-Emitter Voltage ±30

Operating Junction and -55 to +175

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

c

e

48 A

48

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

(IGBT)

(Diode)

Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 1.07 °C/W

Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 3.66

Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––

Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––

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11/07/08

IRGS4056DPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆

V

GE(th)

gfe Forward Transconductance — 7.7 — S

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

E

on

E

off

E

total

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

total

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

RBSOA Reverse Bias Safe Operating Area FULL SQUARE

SCSOA Short Circuit Safe Operating Area 5 — — µs

Erec Reverse Recovery Energy of the Diode — 280 — µJ

t

rr

I

rr

Collector-to-Emitter Breakdown Voltage

/∆T

Temperature Coeff. of Breakdown Voltage —0.30—V/°C

J

600——V

—1.551.85

Collector-to-Emitter Saturation Voltage — 1.90 — V

—1.97—

Gate Threshold Voltage 4.0 — 6.5 V

/∆TJ

Threshold Voltage temp. coef ficient — -18 — mV/°C

Collector-to-Emitter Leakage Current — 2.0 25 µA

—475—

Diode Forward Voltage Drop — 2.10 3.10 V

—1.61—

Gate-to-Emitter Leakage Current — — ±100 nA

Parameter Min. Typ. Max. Units

Total Gate Charge (turn-on) — 25 38

Gate-to-Emitter Charge (turn-on) — 7.0 11 nC

Gate-to-Collector Charge (turn-on) — 11 16

Turn-On Switching Loss — 75 118

Turn-Off Switching Loss — 225 273 µJ

Total Switching Loss — 300 391

Turn-On delay time — 31 40

Rise time — 17 24 ns

Turn-Off delay time — 83 94

Fall time — 24 31

Turn-On Switching Loss — 185 —

Turn-Off Switching Loss — 355 — µJ

Total Switching Loss — 540 —

Turn-On delay time — 30 —

Rise time — 18 — ns

Turn-Off delay time — 102 —

Fall time — 41 —

Input Capacitance — 765 — pF

Output Capacitance — 52 —

Reverse Transfer Capacitance — 23 — f = 1.0Mhz

Diode Reverse Recovery Time — 68 — ns

Peak Reverse Recovery Current — 19 — A

Ref.Fig

= 0V, IC = 100µA

V

GE

V

= 0V, IC = 1mA (25°C-175°C) CT6

GE

I

= 12A, VGE = 15V, TJ = 25°C

C

I

= 12A, VGE = 15V, TJ = 150°C

C

= 12A, VGE = 15V, TJ = 175°C

I

C

V

= VGE, IC = 350µA

CE

= VGE, IC = 1.0mA (25°C - 175°C)

V

CE

V

= 50V, IC = 12A, PW = 80µs

CE

= 0V, VCE = 600V

V

GE

= 0V, VCE = 600V, TJ = 175°C

V

GE

= 12A

I

F

I

= 12A, TJ = 175°C

F

= ±20V

V

GE

= 12A

I

C

V

= 15V CT1

GE

= 400V

V

CC

I

= 12A, VCC = 400V, VGE = 15V CT4

C

= 22Ω, L = 200µH, LS = 150nH, TJ = 25°C

R

G

Energy losses include tail & diode reverse recovery

= 12A, VCC = 400V, VGE = 15V

I

C

R

= 22Ω, L = 200µH, LS = 150nH, TJ = 25°C

G

= 12A, VCC = 400V, VGE=15V

I

C

R

=22Ω, L=100µH, LS=150nH, TJ = 175°C

G

Energy losses include tail & diode reverse recovery WF1, WF2

I

= 12A, VCC = 400V, VGE = 15V 14, 16

C

= 22Ω, L = 200µH, LS = 150nH

R

G

T

= 175°C WF1

J

V

= 0V 23

GE

= 30V

V

CC

T

= 175°C, IC = 48A

J

V

= 480V, Vp =600V

CC

f

Conditions

f

CT6

5,6,7

9,10,11

9, 10,

11, 12

8

Ref.Fig

24

CT4

13, 15

CT4

WF2

4

CT2

Rg = 22Ω, VGE = +15V to 0V

V

= 400V, Vp =600V 22, CT3

CC

Rg = 22Ω, VGE = +15V to 0V

T

= 175°C

J

= 400V, IF = 12A

V

CC

V

= 15V, Rg = 22Ω, L =200µH, Ls = 150nH WF3

GE

WF4

17, 18, 19

20, 21

Notes:

 V

= 80% (V

CC

), VGE = 20V, L = 100µH, RG = 22Ω.

CES

 This is only applied to TO-220AB package.  Pulse width limited by max. junction temperature.  Refer to AN-1086 for guidelines for measuring V

(BR)CES

safely.

2 www.irf.com

IRGS4056DPbF

25

20

15

) A

(

C

I

10

5

0

0 20 40 60 80 100 120 140 160 180

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

100

10

) A

(

C

I

1

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000 10000

VCE (V)

10µsec

100µsec

1msec

DC

Fig. 3 - Forward SOA

TC = 25°C, TJ ≤ 175°C; V

GE

=15V

150

125

100

) W

(

75

t o

t

P

50

25

0

0 20 40 60 80 100 120 140 160 180

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

100

) A

(

10

C

I

1

10 100 1000

VCE (V)

Fig. 4 - Reverse Bias SOA

TJ = 175°C; V

GE

=15V

45

40

35

30

)

25

A

(

E

20

C

I

15

10

5

0

0 1 2 3 4 5 6 7 8

V

CE

VGE = 18V

VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

(V)

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

45

40

CE

VGE = 18V

VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

(V)

35

30

)

25

A

(

E

20

C

I

15

10

5

0

0 1 2 3 4 5 6 7 8

V

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

www.irf.com 3

IRGS4056DPbF

45

VGE = 18V

40

VGE = 15V

35

VGE = 12V VGE = 10V

30

VGE = 8.0V

)

25

A

(

E

20

C

I

15

10

5

0

0 1 2 3 4 5 6 7 8

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 175°C; tp = 80µs

20

18

16

14

12

) V

(

10

E C

V

8

6

4

2

0

5 101520

V

Fig. 9 - Typical V

GE

(V)

CE

ICE = 6.0A

I

= 12A

CE

I

= 24A

CE

vs. V

GE

TJ = -40°C

20

18

16

14

12

) V

(

10

E C

V

8

6

4

2

0

5 101520

V

Fig. 11 - Typical V

GE

(V)

CE

vs. V

ICE = 6.0A

I

= 12A

CE

I

= 24A

CE

GE

TJ = 175°C

80

70

60

50

) A

(

40

F

I

30

20

10

0

0.0 1.0 2.0 3.0 4.0

-40°c 25°C

175°C

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

20

18

16

14

12

) V

(

10

E C

V

8

6

4

2

0

5 101520

V

Fig. 10 - Typical V

GE

ICE = 6.0A

I

CE

I

CE

(V)

CE

= 12A

= 24A

vs. V

GE

TJ = 25°C

50

TJ = 25°C

40

30

) A

(

E C

I

20

10

0

0 5 10 15

TJ = 175°C

V

(V)

GE

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

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IRGS4056DPbF

800

700

600

)

500

J µ

( y

400

g

r e n E

300

200

100

0

0 102030

Fig. 13 - Typ. Energy Loss vs. I

TJ = 175°C; L = 200µH; V

500

450

400

350

) J µ

300

( y

g

r

250

e n E

200

150

100

50

0 25 50 75 100 125

E

OFF

Fig. 15 - Typ. Energy Loss vs. R

TJ = 175°C; L = 200µH; V

25

E

OFF

E

ON

IC (A)

= 400V, RG = 22Ω; V

CE

E

ON

Rg (Ω)

= 400V, I

CE

C

G

= 12A; V

GE

= 15V

1000

td

) s n

( e m

i T

g n

i h c

i w S

100

10

1

OFF

t

F

td

ON

t

R

5 10 15 20 25

Fig. 14 - Typ. Switching Time vs. I

TJ = 175°C; L = 200µH; V

1000

) s n

( e m

i T

100

g n

i h c

i w S

10

td

OFF

t

F

td

ON

t

R

0 25 50 75 100 125

Fig. 16 - Typ. Switching Time vs. R

TJ = 175°C; L = 200µH; V

25

IC (A)

= 400V, RG = 22Ω; V

CE

RG (Ω)

= 400V, I

CE

C

G

= 12A; V

GE

= 15V

GE

= 15V

G =

IF (A)

22

47

100

10

Ω

20

Ω

) A

(

15

Ω

F

R R

I

10

5

0 25 50 75 100 125

Ω)

RG (

Fig. 18 - Typ. Diode IRR vs. R

G

TJ = 175°C

20

15

) A

(

R R

I

10

5

0

0 10 20 30

R

Fig. 17 - Typ. Diode IRR vs. I

TJ = 175°C

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IRGS4056DPbF

25

20

15

) A

(

R R

I

10

5

0

0 500 1000 1500

diF /dt (A/µs)

Fig. 19 - Typ. Diode IRR vs. diF/dt

VCC = 400V; VGE = 15V; IF = 12A; TJ = 175°C

400

Ω

350

300

)

250

J µ

( y

200

g

r e n E

150

100

50

0

RG = 10

RG = 47

RG = 100

IF (A)

Ω

RG = 22

0 10 20 30

1400

1200

24A

1000

) C

µ

(

800

R R

Q

600

400

200

0 500 1000 1500

47Ω

100Ω

22Ω

12A

6.0A

diF /dt (A/µs)

Fig. 20 - Typ. Diode QRR vs. diF/dt

VCC = 400V; VGE = 15V; TJ = 175°C

20

18

16

14

)

12

s µ

(

10

e m

i T

8

6

4

2

0

8 1012141618

VGE (V)

10Ω

120

110

100

90

80

70

60

50

40

30

20

C u

r

e n t (

A )

Fig. 21 - Typ. Diode ERR vs. I

TJ = 175°C

10000

)

1000

F p

( e

c n a

t

i c a p a

100

C

10

0 20 40 60 80 100

V

CE

Fig. 23 - Typ. Capacitance vs. V

VGE= 0V; f = 1MHz

F

Cies

Coes

Cres

(V)

CE

Fig. 22 - VGE vs. Short Circuit Time

VCC = 400V; TC = 25°C

16

V

14

) V

( e

12

g a

t

l o V

10

r e

t

i

8

m E

o

t

-

6

e

t a

G

4

,

E G

V

2

0

0 5 10 15 20 25 30

Q G, Total Gate Charge (nC)

CES

V

CES

= 300V

= 400V

Fig. 24 - Typical Gate Charge vs. V

I

= 12A; L = 600µH

CE

GE

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IRGS4056DPbF

τ

10

)

1

C J h

t

Z (

e s n o p s e

R l a

m

r e

0.01

h T

0.001

0.1

D = 0.50

0.20

R

0.10

0.05

0.02

0.01 SINGLE PULSE

( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

1

R

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.358 0.000171

τ

3

0.424 0.001361

τ

3

0.287 0.009475

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

)

C J h

t

Z (

e s n o p s e

R l a

m

r e h

0.01

T

0.001

0.1

D = 0.50

1

0.20

0.10

0.05

R

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

1

R

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.821094 0.000233

τ

3

1.913817 0.001894

τ

3

0.926641 0.014711

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

www.irf.com 7

IRGS4056DPbF

0

1K

DUT

L

VC C

80 V

DUT

480V

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off)

diode clamp /

Fig.C.T.2 - RBSOA Circuit

DUT

4x

DC

360V

DUT

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

V

R =

I

CM

CC

- 5V

DRIVER

Rg

C f or ce

L

DUT /

VCC

400µH

D1 10K

C sense

DUT

VCC

G f orce DUT

0.0075µ

Rg

E sense

E force

Fig.C.T.5 - Resistive Load Circuit

Fig.C.T.6 - BVCES Filter Circuit

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IRGS4056DPbF

5

0

C

500

400

300

2

20

15

tf

90% I

5% I

5% V

E

OFF

CE

10

CE

5

CE

0

Loss

-5

(V)

200

CE

V

100

-100

0

-0.50 0.00 0.50 1.00 1.50 2.00

Time(µs)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175°C using Fig. CT.4

50

400

5

40

tr

300

(V)

200

CE

V

100

-100

0

90% test

TEST

10% test

5% V

E

ON

30

20

10

CE

0

-10

11.70 11.80 11.90 12.00 12.10

Time (µs)

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175°C using Fig. CT.4

25

20

Q

RR

15

t

RR

10

5

0

(A)

RR

I

-10

-5 Peak

I

RR

10% Pea k

I

RR

-15

-20

-25

-0.05 0.05 0.15

time (µS)

Fig. WF3 - Typ. Diode Recovery Waveform

@ TJ = 175°C using Fig. CT.4

500

400

V

E

300

I

CE

(V)

200

CE

V

100

0

-100

-5.00 0.00 5.00 10.00

time (µS)

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 25°C using Fig. CT.3

250

200

150

100

50

0

-50

(A)

CE

I

www.irf.com 9

IRGS4056DPbF

2

D

Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

D2Pak (TO-263AB) Part Marking Information

7+,6,6$1,5)6:,7+ /27&2'(

$66(0%/('21:: ,17+($66(0%/</,1(/

,17(51$7,21$/

5(&7,),(5

/2*2

$66(0%/< /27&2'(

)6

25

,17(51$7,21$/

5(&7,),(5

/2*2

$66(0%/< /27&2'(

)6

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

3$57180%(5

'$7(&2'( 3 '(6,*1$7(6/($')5((

352'8&7237,21$/ <($5  :((. $ $66(0%/<6,7(&2'(

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3$57180%(5

'$7(&2'( <($5  :((. /,1(/

D2Pak (TO-263AB) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

IRGS4056DPbF

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

FEED DIRECTION

330.00 (14.173) MAX.

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

13.50 (.532)

12.80 (.504)

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362) MIN.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawing please refer to IR website at

26.40 (1.039)

24.40 (.961)

3

http://www.irf.com/package/

30.40 (1.197) MAX.

4

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 11/2008

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