Datasheet irgs10b60kd Datasheet

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

G

n-channel

PD - 94382C

IRGB10B60KD IRGS10B60KD IRGSL10B60KD

C

E

V

= 600V

CES

IC = 12A, TC=100°C tsc > 10µs, TJ=150°C V

CE(on)

typ. = 1.8V

TO-220AB

IRGB10B60KD

D2Pak

IRGS10B60KD

TO-262

IRGSL10B60KD

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 22 IC @ TC = 100°C Continuous Collector Current 12 I

CM

I

LM

IF @ TC = 25°C Diode Continuous Forward Current 22 IF @ TC = 100°C Diode Continuous Forward Current 10 I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 156 PD @ TC = 100°C Maximum Power Dissipation 62 T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 44 Clamped Inductive Load Current 44 A

Diode Maximum Forward Current 44 Gate-to-Emitter Voltage ± 20 V

W

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

R

θJA

Wt Weight ––– 1.44 ––– g

Junction-to-Case - IGBT ––– ––– 0.8 Junction-to-Case - Diode ––– ––– 3.4 Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W Junction-to-Ambient, typical socket mount ––– ––– 62 Junction-to-Ambient (PCB Mount, steady state) ––– ––– 40

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6/24/02

IRG/B/S/SL10B60KD

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Qg Total Gate Charge (turn-on) ––– 38 ––– IC = 10A Qge Gate - Emitter Charge (turn-on) ––– 4.3 ––– nC VCC = 400V Qgc Gate - Collector Charge (turn-on) ––– 16.3 ––– VGE = 15V E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

RBSOA Reverse Bias Safe Operting Area FULL SQUARE

SCSOA Short Circuit Safe Operting Area 10 ––– –––

Erec Reverse Recovery energy of the diode – – – 245 330 µJ TJ = 150°C t

rr

I

rr

Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA

/∆T

Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)

J

Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 IC = 10A, VGE = 15V

––– 2.20 2.50 V IC = 10A, VGE = 15V TJ = 150°C

Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)

Forward Transconductance ––– 7.0 ––– S VCE = 50V, IC = 10A, PW=80µs Zero Gate Voltage Collector Current ––– 3.0 150 µA VGE = 0V, VCE = 600V

––– 300 700 V

= 0V, VCE = 600V, TJ = 150°C

GE

Diode Forward Voltage Drop ––– 1.30 1.45 IC = 10A

––– 1.30 1.45 V IC = 10A TJ = 150°C

Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Turn-On Switching Loss ––– 140 247 µJ IC = 10A, VCC = 400V Turn-Off Switching Loss ––– 250 360 VGE = 15V,RG = 47Ω, L = 200µH Total Switching Loss ––– 390 607 Ls = 150nH TJ = 25°C  Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V Rise Time ––– 20 29 VGE = 15V, RG = 47Ω, L = 200µH Turn-Off Delay Time ––– 230 262 ns Ls = 150nH, TJ = 25°C Fall Time ––– 23 32 Turn-On Switching Loss ––– 230 340 IC = 10A, VCC = 400V Turn-Off Switching Loss ––– 350 464 µJ VGE = 15V,RG = 47Ω, L = 200µH Total Switching Loss ––– 580 804 Ls = 150nH TJ = 150°C  Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V Rise Time ––– 20 28 VGE = 15V, RG = 47Ω, L = 200µH Turn-Off Delay Time ––– 250 274 ns Ls = 150nH, TJ = 150°C Fall Time ––– 26 34 Input Capacitance ––– 620 ––– VGE = 0V Output Capacitance ––– 62 ––– pF VCC = 30V Reverse Transfer Capacitance ––– 22 ––– f = 1.0MHz

TJ = 150°C, IC = 44A, Vp =600V VCC = 500V, VGE = +15V to 0V,

µs TJ = 150°C, Vp =600V,RG = 47Ω

VCC = 360V, VGE = +15V to 0V

Diode Reverse Recovery time ––– 90 105 ns VCC = 400V, IF = 10A, L = 200µH Diode Peak Reverse Recovery Current ––– 19 22 A VGE = 15V,RG = 47Ω, Ls = 150nH

RG = 47Ω

Ref.Fig.

5, 6,7 9,10,11 9,10,11 12

8

Ref.Fig.

CT1

CT4

13,15

WF1WF2

14, 16

CT4 WF1 WF2

4 CT2 CT3

WF4

17,18,19

20, 21

CT4,WF3

Note  to  are on page 15

2 www.irf.com

IRG/B/S/SL10B60KD

25

20

15

) A

(

C

I

10

5

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

100

180 160 140 120

)

100

W

(

t

o

t

80

P

60 40 20

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

100

10

) A

(

C

I

1

0.1 1 10 100 1000 10000

DC

V

CE

(V)

Fig. 3 - Forward SOA

TC = 25°C; T

≤ 150°C

J

10 µs

20 µs

100 µs

1ms

10

) A

C

I

1

0

10 100 1000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 150°C; V

GE

=15V

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IRG/B/S/SL10B60KD

40

VGE = 18V

35

VGE = 15V VGE = 12V

30

VGE = 10V VGE = 8.0V

25

) A

(

20

E C

I

15 10

5 0

0123456

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

40

VGE = 18V

35

VGE = 15V VGE = 12V

30

VGE = 10V VGE = 8.0V

25

) A

(

20

E C

I

15 10

5 0

0123456

V

(V)

CE

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

40

VGE = 18V

35

VGE = 15V VGE = 12V

30

VGE = 10V VGE = 8.0V

25

) A

(

20

E C

I

15 10

5 0

0123456

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

40 35 30 25

) A

(

20

F

I

15 10

5 0

0.0 0.5 1.0 1.5 2.0 2. 5 3.0

-40°C 25°C 150°C

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

4 www.irf.com

IRG/B/S/SL10B60KD

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5 101520

V

Fig. 9 - Typical V

GE

ICE = 5.0A I

CE

I

CE

(V)

vs. V

CE

= 10A = 15A

GE

TJ = -40°C

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5101520

V

Fig. 10 - Typical V

GE

(V)

CE

ICE = 5.0A I

CE

I

CE

vs. V

GE

= 10A = 15A

TJ = 25°C

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5101520

V

Fig. 11 - Typical V

GE

ICE = 5.0A I

CE

I

CE

(V)

vs. V

CE

= 10A = 15A

GE

TJ = 150°C

80 70 60 50

) A

(

40

E C

I

30 20

TJ = 150°C

10

0

0 5 10 15 20

TJ = 25°C TJ = 150°C

V

GE

(V)

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

TJ = 25°C

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IRG/B/S/SL10B60KD

800 700 600

)

500

J

µ

(

y

400

g

r

e

n E

300 200 100

0

0 5 10 15 20 25

E

OFF

IC (A)

Fig. 13 - Typ. Energy Loss vs. I

TJ = 150°C; L=200µH; VCE= 400V

RG= 47Ω; VGE= 15V

500 450 400 350

)

300

J

µ

( y

250

g

r

e

n

200

E

150 100

50

0

0 50 100 150

E

RG (Ω)

E

OFF

ON

1000

td

OFF

)

s

n

( e m

i T

100

g

n

i

h

c

i w S

C

td

ON

t

F

t

10

R

0 5 10 15 20 25

IC (A)

Fig. 14 - Typ. Switching Time vs. I

C

TJ = 150°C; L=200µH; VCE= 400V

RG= 47Ω; VGE= 15V

1000

td

OFF

)

s

n

(

E

ON

e m

i T

100

g

n

i

h

c

i w S

10

0 50 100 150

RG (Ω)

td

ON

t

R

t

F

Fig. 15 - Typ. Energy Loss vs. R TJ = 150°C; L=200µH; VCE= 400V

ICE= 10A; VGE= 15V

G

Fig. 16 - Typ. Switching Time vs. R

TJ = 150°C; L=200µH; VCE= 400V

ICE= 10A; VGE= 15V

G

6 www.irf.com

IRG/B/S/SL10B60KD

25

20

15

) A

(

R R

I

10

5

0

R

10

Ω

G =

R

22

Ω

G =

R

47

Ω

G =

R

100

Ω

G =

0 5 10 15 20 25

IF (A)

Fig. 17 - Typical Diode I

RR

TJ = 150°C

25

20

15

) A

(

R R

I

10

5

vs. I

25

20

15

) A

(

R R

I

10

5

0

0 50 100 150

RG (

Ω)

F

Fig. 18 - Typical Diode I

RR

vs. R

G

TJ = 150°C; IF = 10A

) C

µ

(

R R

Q

1200 1100 1000

900 800 700 600 500

20A

5.0A

100

10A

47

Ω

22

10

Ω

0

0 500 1000 1500

diF /dt (A/µs)

Fig. 19- Typical Diode I

vs. diF/dt

RR

VCC= 400V; VGE= 15V;

400

0 500 1000 1500

diF /dt (A/µs)

Fig. 20 - Typical Diode Q

RR

VCC= 400V; VGE= 15V;TJ = 150°C

ICE= 10A; TJ = 150°C

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IRG/B/S/SL10B60KD

450

) F

p

( e

c

n

a

t

i

c

a

p

a C

1000

100

400

350

300

)

J

µ

250

( y

g

r

200

e

n E

150

100

50

0

0 5 10 15 20 25

IF (A)

Fig. 21 - Typical Diode E

RR

TJ = 150°C

Cies

) V

(

Coes

Cres

E G

V

16 14 12 10

vs. I

8 6 4 2

100

F

10

22

47

Ω

300V

400V

10

1 10 100

V

(V)

CE

Fig. 22- Typ. Capacitance vs. V

CE

VGE= 0V; f = 1MHz

0

0 10203040

Q G, Total Gate Charge (nC)

Fig. 23 - Typical Gate Charge vs. V

I

= 10A; L = 600µH

CE

GE

8 www.irf.com

IRG/B/S/SL10B60KD

τ

1

)

C

J

h

t

0.1

Z (

e

s

n

o

p

s

e R

l

a

0.01

m

r

e

h T

D = 0.50

0.20

0.10

0.05

0.01

0.02

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

Ci= τi/Ri

R

1

R

1

τ

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.285 0.000134

τ

3

0.241 0.000565

τ

3

0.288 0.0083

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

t1 , Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

)

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

C

J

h

t

0.001

D = 0.50

1

0.1

0.01

0.20

0.10

0.05

0.01

0.02

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

R

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.846 0.000149

τ

3

1.830 0.001575

τ

3

1.143 0.027005

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRG/B/S/SL10B60KD

L

0

1K

DUT

VCC

80 V

L

+

-

DUT

480V

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Driver

DC

360V

DUT

Fig.C.T.2 - RBSOA Circuit

diode clamp /

DUT

- 5V

Rg

L

DUT /

DRIVER

VCC

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

V

CC

R =

I

CM

DUT

Rg

VCC

Fig.C.T.5 - Resistive Load Circuit

10 www.irf.com

IRG/B/S/SL10B60KD

r

600

500

400

90% I

CE

300

5% V

tf

CE

5% I

CE

(V)

CE

V

200

100

0

-100

Eoff Loss

-0.20 0.00 0.20 0.40 0.60 0.80

time(µs)

Fig. WF1- Typ. Turn-off Loss Waveform

@ TJ = 150°C using Fig. CT.4

100

Q

0

t

RR

10%

Peak

IRR

(V)

F

V

-100

-200

-300

-400

Peak

I

RR

12

10

8

6

4

2

0

-2

15

10

5

0

-5

-10

(A)

CE

I

(A)

F

I

600

500

400

TEST CURRENT

300

(V)

CE

V

200

100

t

90% tes t current

10% test current

5% V

CE

0

Eon Loss

-100

15.90 16.00 16.10 16.20

time (µs)

Fig. WF2- Typ. Turn-on Loss Waveform

@ TJ = 150°C using Fig. CT.4

400

V

350

300

250

(V)

200

CE

V

150

100

CE

I

CE

100

50

30

25

20

15

10

5

0

-5

(A)

CE

I

(A)

CE

I

-500

-600

-0.15 -0.05 0.05 0.15 0. 25

time (µS)

Fig. WF3- Typ. Diode Recovery Waveform

@ TJ = 150°C using Fig. CT.4

-15

-20

50

0

-5.00 0.00 5.00 10.00 15.00

time (µS)

Fig. WF4- Typ. S.C Waveform

@ TJ = 150°C using Fig. CT.3

0

www.irf.com 11

IRG/B/S/SL10B60KD

E

X

A

M

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0

1

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1

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8

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1

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=

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TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTL INE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

10.29 (.405)

4

1 2 3

3X

0.36 (.014) M B A M

6.47 (.255)

6.10 (.240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

LEAD ASSIGNMENTS

HEXFET

LEAD AS S IGNM E NT S

1- GATE

1 - GATE

2- DRAIN

2 - DRAIN

3- SOURCE 4- DRAIN

3 - SOURCE 4 - DRAIN

0.55 (.022)

3X

0.46 (.018)

IGBTs, CoPACK

1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR

TO-220AB Part Marking Information

12 www.irf.com

D2Pak Package Outline

F

5

3

0

S

T

H

I

S

I

S

A

N

I

R

F

5

3

0

S

W

I

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L

O

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C

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D

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8

0

2

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A

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B

L

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D

O

N

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0

2

,

2

0

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A

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T

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U

M

B

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R

D

A

T

E

C

O

D

E

Y

E

A

R

0

=

2

0

W

E

K

0

2

L

I

N

E

L

IRG/B/S/SL10B60KD

D2Pak Part Marking Information

www.irf.com 13

IRG/B/S/SL10B60KD

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

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L

3

1

0

3

L

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1

7

8

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Y

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A

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E

W

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1

9

L

I

N

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C

L

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T

C

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D

E

Y

E

A

R

7

=

1

9

7

A

S

E

M

B

L

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D

O

N

W

1

9

,

1

9

7

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TO-262 Package Outline

IGBT

1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR

TO-262 Part Marking Information

14 www.irf.com

D2Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

IRG/B/S/SL10B60KD

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

60.0 0 (2.362) MIN.

30.40 (1.197) MAX.

4

Notes:



This is only applied to TO-220AB package

 This is applied to D

2

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

 Energy losses include "tail" and diode reverse recovery.

TO-220 package is not recommended for Surface Mount Application

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 6/02

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