Datasheet IRGR4610DPBF Specification

→

IRGR4610DPbF

IRGS4610DPbF

IRGB4610DPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V

CES

= 600V

C

IC = 10A, TC = 100°C

E

G

D-Pak

tsc > 5µs, T

V

CE(on) typ.

= 175°C

jmax

= 1.7V @ 6A

G

n-channel

E

IRGR4610DPbF

GCE

Applications

• Appliance Drives

• Inverters

• UPS

Features Benefits

Low V

Square RBSOA and maximum junction temperature 175°C

Positive V parameters 5μs short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environmentally friendly

and switching losses

CE(ON)

temperature coefficient and tighter distribution of

CE(ON)

Gate Collector Em itter

High efficiency in a wide range of applications and switching frequencies

Improved reliability due to rugged hard switching performance and higher power capability

Excellent current sharing in parallel operation

C

G

D2-Pak

IRGS4610DPbF

C

E

C

G

TO-220AB

IRGB4610DPbF

E

Base part number Package Type Orderable Part Number

Standard Pack

Form Quantity

Tube 75 IRGR4610DPbF

D-PAK IRGR4610DPbF

Tape and Reel 2000 IRGR4610DTRPbF

Tape and Reel Right 3000 IRGR4610DTRRPbF

Tape and Reel Left 3000 IRGR4610DTRLPbF

Tube 50 IRGS4610DPbF

Tape and Reel Right 800 IRGS4610DTRRPbF

IRGS4610DPbF

D

2

PAK

Tape and Reel Left 800 IRGS4610DTRLPbF

IRGB4610DPbF TO-220AB Tube 50 IRGB4610DPbF

Absolute Maximum Ratings

Parameter Max. Units

V

CES

I

@ TC = 25°C Continuous Collector Current

C

I

@ TC = 100°C Continuous Collector Current

C

I

CM

I

LM

I

@ TC = 25°C Diode Continuous Forward Current

F

I

@ TC=100°C Diode Continuous Forward Current

F

I

FM

V

GE

P

@ TC =25° Maximum Power Dissipation W

D

P

@ TC =100° Maximum Power Dissipation

D

T

J

T

STG

Collector-to-Emitter Breakdown Voltage V

Pulsed Collector Current, VGE = 15V

Clamped Inductive Load Current, VGE = 20V

Diode Maximum Forward Current

f

c

Continuous Gate-to-Emitter Voltage V Transient Gate-to-Emitter Voltage

Operating Junction and

Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw TO-220

600

16

10

18

24

10

6

24 ± 20 ± 30

77

39

-40 to + 175

300

10lbf. In (1.1 N.m)

A

°C

Thermal Resistance

θ

(D2PAK)

h

Δ

GE

Δ

CE

R

JC

R

JC

R

CS

R

JA

θ

IRGR/S/B4610DPbF

Parameter Min. Typ. Max. Units

Thermal Resistance, Junction-to-Case -(IGBT)

Thermal Resistance, Junction-to-Case -(Diode)

Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220) ––– 0.5 –––

Thermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK)

Thermal Resistance, Junction-to-Ambient (D-PAK)

Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State)

d

h

––– ––– 1.9

––– ––– 6.3

––– ––– 50

––– ––– 110

––– ––– 40

°C/W

Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220)

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR )CES

V

(BR)CES

V

CE(on)

V

GE( th)

V

GE(th)

gfe Forward Transconductance — 5.8 — S V I

CES

V

FM

I

GES

Collector-to-Emitter Breakdown Voltage 600 — — V

/ΔTJTemperature Coeff. of Breakdown Voltage — 0.36 — V/°C

—1.72.0 I

Collector-to-Emitter Saturation Voltage — 2.07 — V IC = 6.0A, VGE = 15V, TJ = 150°C

—2.14— I

Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 150μA

/ΔTJ Threshold Voltage temp. coefficient —

Collector-to-Emitter Leakage Current

Diode Forward Voltage Drop

——25μAV

——250 —1.602.30 VIF = 6.0A

—1.30— I

-13

—mV/°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ± 20 V

––– ––– 62

V

= 0V, Ic =100 μA

GE

= 0V, Ic = 250μA ( 25 -175 oC )

V

= 6.0A, VGE = 15V, TJ = 25°C

C

= 6.0A, VGE = 15V, TJ = 175°C

C

= VGE, IC = 250μA ( 25 -175 oC )

V

= 25V, IC = 6.0A, PW =80μS

CE

= 0V,VCE = 600V

GE

V

= 0V, VCE = 600V, TJ =175°C

GE

= 6.0A, TJ = 175°C

F

e

Notes:

 VCC = 80% (V  Rθ is measured at TJ approximately 90°C.  Refer to AN-1086 for guidelines for measuring V  Pulse width limited by max. junction temperature.

 Values influenced by parasitic L and C in measurement  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application

note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

), VGE = 20V, L = 1.0mH, RG = 100Ω.

CES

(BR)CES

safely.

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

Q

g

Q

ge

Q

gc

E

on

E

off

E

tot al

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

tot al

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

RBSOA Reverse Bias Safe Operating Area FULL SQUARE V

Erec Reverse recovery energy of the diode trr

Irr Peak Reverse Recovery Current — 12 — A V

Total Gate Charge (turn-on) — 13 — IC = 6.0A Gate-to-Emitter Charge (turn-on) — 3.0 — nC VCC = 400V Gate-to-Collector Charge (turn-on) — 6.4 — VGE = 15V Turn-On Switching Loss — 56 — IC = 6.0A, VCC = 400V, VGE = 15V Turn-Off Switching Loss — 122 — μJRG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C Total Switching Loss — Turn-On delay time — Rise time — Turn-Off delay time — Fall time —

178

— Energy losses include tail and diode reverse recovery — IC = 6.0A, VCC = 400V

27

—nsRG = 47Ω, L=1mH, LS= 150nH

11

—T

75

—

17 Turn-On Switching Loss — 140 — IC = 6.0A, VCC = 400V, VGE = 15V Turn-Off Switching Loss — 189 — μJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 175°C Total Switching Loss — Turn-On delay time — Rise time — Turn-Off delay time — Fall time —

329

— Energy losses include tail and diode reverse recovery — IC = 6.0A, VCC = 400V

26

—nsRG = 47Ω, L=1mH, LS= 150nH

12

—T

95

—

32 Input Capacitance — 350 — VGE = 0V Output Capacitance — 29 — VCC = 30V

pF

Reverse Transfer Capacitance — 10 — f = 1Mhz

μs

—SCSOA Short Circuit Safe Operating Area —5

Diode Reverse recovery time

—

178

74

—

μJ ns V

IRGR/S/B4610DPbF

Conditions

= 25°C

J

= 175°C

J

= 175°C, IC = 24A

T

J

= 500V, Vp =600V

CC

= 100Ω, VGE = +20V to 0V

R

G

= 400V, Vp =600V

V

CC

= 100Ω, VGE = +15V to 0V

R

G

= 175oC

T

J

= 400V, IF = 6.0A

CC

= 15V, Rg = 47Ω, L=1mH, LS=150nH

GE

g

IRGR/S/B4610DPbF

18

16

14

12

)

10

A

(

C

I

8

6

4

2

0

25 50 75 100 125 150 175

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

100

80

70

60

50

) W

(

t

40

o

t

P

30

20

10

0

25 50 75 100 125 150 175

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

100

10

) A

(

C

I

1

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000

100μsec

DC

VCE (V)

Fig. 3 - Forward SOA,

TC = 25°C, T

20

15

) A

(

10

E C

I

≤ 175°C, V

J

Top VGE = 18V

Bottom VGE = 8.0V

10μsec

= 15V

GE

VGE = 15V

VGE = 12V

VGE = 10V

10

) A

C

I

1

0

10 100 1000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 175°C, V

20

15

) A

(

10

E C

I

= 20V

GE

Top VGE = 18V

Bottom VGE = 8.0V

VGE = 15V

VGE = 12V

VGE = 10V

5

0

0 2 4 6 8 10

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80μs

5

0

0 2 4 6 8 10

V

(V)

CE

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80μs

IRGR/S/B4610DPbF

20

15

) A

(

10

E C

I

5

0

0 2 4 6 8 10

V

CE

Top VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

Bottom VGE = 8.0V

(V)

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 175°C; tp = 80μs

10

8

20

18

16

14

12

) A

(

10

F

I

8

6

4

2

0

0.0 1.0 2.0 3.0

-40°C 25°C

175°C

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80μs

10

8

6

) V

(

E C

V

4

2

0

5 101520

V

Fig. 9 - Typical V

GE

ICE = 3.0A

I

CE

I

CE

(V)

vs. V

CE

= 6.0A

= 12A

GE

TJ = -40°C

10

8

ICE = 3.0A

6

) V

(

E C

V

4

2

0

5 101520

V

GE

Fig. 11 - Typical V

(V)

CE

I

CE

I

CE

vs. V

= 6.0A

= 12A

GE

TJ = 175°C

6

) V

(

E C

V

4

2

0

5 101520

V

GE

ICE = 3.0A

I

(V)

Fig. 10 - Typical V

TJ = 25°C

20

)

18

A

( t

16

n e

r

14

u C r

12

e

t

i m

10

E

o

t

8

-

r o

t c

6

e

l

l o

4

C

, C

I

2

0

4 6 8 10121416

TJ = 25°C

TJ = 175°C

V

Gate-to-Emitter Voltage (V)

GE,

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10μs

CE

= 6.0A

= 12A

vs. V

GE

IRGR/S/B4610DPbF

400

350

300

) J

μ

250

( y

g

r e

200

n E

150

100

50

02468101214

Fig. 13 - Typ. Energy Loss vs. I

TJ = 175°C; L = 1mH; V

220

200

180

)

160

J

μ

( y

140

g

r e n E

120

100

E

OFF

E

OFF

E

ON

IC (A)

= 400V, RG = 47Ω; V

CE

E

ON

1000

td

) s

100

n

( e m

i T

g n

i h c

i w

10

S

1

C

= 15V.

GE

OFF

t

F

td

ON

t

R

2 4 6 8 10 12 14

IC (A)

Fig. 14 - Typ. Switching Time vs. I

C

TJ = 175°C; L=1mH; VCE= 400V

RG= 47Ω; VGE= 15V

1000

) s

100

n

( e m

i T

g n

i h c

i w

10

S

td

OFF

t

F

td

ON

t

R

80

60

0 25 50 75 100 125

Fig. 15 - Typ. Energy Loss vs. R

TJ = 175°C; L = 1mH; V

30

25

20

) A

(

15

R R

I

10

5

0

2 4 6 8 10 12 14

Rg (Ω)

= 400V, I

CE

IF (A)

1

0 25 50 75 100 125

RG (Ω)

G

= 6.0A; V

CE

R

10Ω

G =

R

22Ω

G =

R

47Ω

G =

R

100Ω

G =

GE

= 15V

) A

(

I

Fig. 16- Typ. Switching Time vs. R

TJ = 175°C; L=1mH; VCE= 400V

ICE= 6.0A; VGE= 15V

22

20

18

16

14

R R

12

10

8

6

0 25 50 75 100 125

RG (Ω)

G

Fig. 17 - Typical Diode I

TJ = 175°C

RR

vs. I

F

Fig. 18 - Typical Diode I

TJ = 175°C; IF = 6.0A

RR

vs. R

G

IRGR/S/B4610DPbF

20

18

16

)

14

A

(

R R

I

12

10

8

6

0 200 400 600 800 1000 1200

diF /dt (A/μs)

Fig. 19- Typical Diode I

vs. diF/dt

RR

VCC= 400V; VGE= 15V;

ICE= 6.0A; TJ = 175°C

350

300

RG = 10

250

) J

μ

( y

200

g

r e n E

150

100

RG = 22

RG = 47

RG = 100

1200

1000

)

800

C n

(

R R

600

Q

100

Ω

400

200

0 500 1000 1500

Fig. 20 - Typical Diode Q

47

Ω

3.0A

12A

22

Ω

6.0A

diF /dt (A/μs)

RR

10

Ω

VCC= 400V; VGE= 15V; TJ = 175°C

20

T

Ω

15

) s

μ

(

10

e m

i T

5

sc

I

sc

50

40

30

20

C u

r

e n t (

A )

50

2 4 6 8 10 12 14

IF (A)

Fig. 21 - Typical Diode E

TJ = 175°C

1000

)

100

F p

( e

c n a

t

i c a p a

10

C

1

0 100 200 300 400 500

V

(V)

CE

Fig. 23- Typ. Capacitance vs. V

VGE= 0V; f = 1MHz

RR

Cies

vs. I

Coes

Cres

0

8 1012141618

VGE (V)

F

Fig. 22- Typ. VGE vs. Short Circuit Time

10

VCC=400V, TC =25°C

16

V

= 400V

CES

V

= 300V

CES

= 6.0A, L=600μH

GE

CE

14

) V

( e

12

g a

t

l o V

10

r e

t

i

8

m E

o

t

-

6

e

t a

G

4

,

E G

V

2

0

0 2 4 6 8 10 12 14

Q G, Total Gate Charge (nC)

Fig. 24 - Typical Gate Charge vs. V

I

CE

IRGR/S/B4610DPbF

τ

10

)

1

C J h

t

Z (

e s n o

0.1

p s e

R l a

m

r e h

0.01

T

0.001

D = 0.50

0.20

0.10

0.05

0.02

0.01

τ

J

τ

J

τ

1

Ci= τi/Ri

R

1

2

R

1

τ

1

2

3

R

2

3

τ

3

τ

2

3

Ri (°C/W) τi (sec)

4

R

4

0.0415 0.000005

τ

C

τ

0.7262 0.000076

4

τ

4

0.7721 0.000810

0.4016 0.004929

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

)

C J h

t

Z (

e s n o p s e

R l a

0.1

m

r e h T

D = 0.50

1

0.20

0.10

R

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

1

2

R

1

2

τ

2

τ

2

R

3

R

3

τ

3

τ

3

Ri (°C/W) τi (sec)

4

R

4

0.2195 0.000023

τ

C

τ

1.7733 0.000165

4

τ

4

2.9352 0.001493

1.3704 0.013255

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

IRGR/S/B4610DPbF

L

0

1K

DUT

VCC

80 V

+

-

Rg

DUT

480V

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - Typical Filter Circuit for

V

(BR)CES

Measurement

IRGR/S/B4610DPbF

t

Q

tf

600

500

400

300

(V)

CE

V

200

100

90% I

CE

5% I

CE

5% V

CE

0

Eoff Loss

-100

-0.2 0 0.2 0.4 0.6 0.8 1

time(μs)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175°C using Fig. CT.4

12

10

8

6

4

2

0

-2

600

500

tr

TEST

CURRENT

400

90% test

cur rent

5% V

CE

(V)

CE

V

300

200

100

10% test

cur rent

0

Eon Loss

-100

4.3 4.5 4.7

time (μs)

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175°C using Fig. CT.4

30

25

20

15

10

5

0

-5

100

0

-100

-200

(V)

F

V

-300

Pea k

I

RR

10% Pea k

IRR

-400

-500

-600

-0.05 0.05 0.15 0.25

time (μS)

WF.3- Typ. Diode Recovery Waveform

@ TJ = 175°C using CT.4

15

10

5

0

-5

-10

-15

-20

500

450

V

CE

400

350

300

250

I

Vce (V)

200

CE

150

100

50

0

-2-1012345678

Time (uS)

WF.4- Typ. Short Circuit Waveform

@ TJ = 25°C using CT.3

80

70

60

50

40

30

20

10

0

-10

-20

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

IRGR/S/B4610DPbF

D-Pak (TO-252AA) Part Marking Information

EXAMPLE:

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE AS SEMBLY LINE "A"

INTERNAT IONAL

RECTIFIER

LOGO

ASSEMBLY

LOT CODE

IRFU120

916A

PART NUMBER

DATE CODE YE AR 9 = 1999

3412

WEEK 16 LINE A

IRGR/S/B4610DPbF

D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))

TR

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

8.1 ( .318 )

7.9 ( .312 )

TRR

TRL

16.3 ( .641 )

15.7 ( .619 )

FEED DIRECTION

13 INCH

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

16 mm

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

2

D

Pak Package Outline

Dimensions are shown in millimeters (inches)

IRGR/S/B4610DPbF

D2Pak Part Marking Information

THIS IS AN IRF530S WITH

LOT CODE 8024 ASS EMBLE D ON WW 02, 2000 IN THE ASSEMBLY LINE "L"

OR

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

F530S

PART NUMBE R

DAT E CODE P = DESIGNATES LEAD - FREE

YEAR 0 = 2000 WE E K 0 2 A = ASSEMBLY SITE CODE

PART NUMBER

DAT E CODE YEAR 0 = 2000 WE E K 0 2 LINE L

PRODUCT (OPT IONAL)

D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches))

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

IRGR/S/B4610DPbF

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

FEED DIRECTION

330.00 (14.173) MAX.

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

13.50 (.532)

12.80 (.504)

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362) MIN.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

3

30.40 (1.197) MAX.

4

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRGR/S/B4610DPbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010

LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN THE ASS EMBLY LINE "C"

Note: "P" in assembly line position

in dicates "L ead - F ree"

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

INTE RNAT IONAL

RECTIF IER

LOGO

AS S E M B L Y LOT CODE

PART NU MB ER

DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C

IRGR/S/B4610DPbF

Date

Comments

•

Updated package outline on page 15.

Qualification Information

Qualification Level

Moisture Sensitivity Level

†

Industrial

††

MSL1

D-Pak

2

Pak

D

(per JEDEC JESD47F)

TO-220 N/A

RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release

Revision History

11/ 14/ 2014

Added note fto IFM Diode Maximum Forward Current on page 1.

•

Removed note

f

to switching losses test condition on page 3.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/