Datasheet irgr3b60kd2 Datasheet

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

G

n-channel

PD - 94601A

IRGR3B60KD2

C

E

V

= 600V

CES

IC = 4.2A, TC=100°C tsc > 10µs, TJ=150°C V

D-Pak

CE(on)

typ. = 1.9V

Absolute Maximum Ratings

Parameter Max. Units

V

CES

@ TC = 25°C Conti n uous Collector Cu r rent 7.8 A

I

C

I

@ TC = 100°C Continuous Collector Current 4.2

C

I

CM

I

LM

@ Tc = 25°C Diode Continous Forward Curre nt 6.0

I

F

I

@ Tc = 100°C Diode Continuous Forward Current 3.2

F

I

FM

V

GE

@ TC = 25°C Maximum Power Dissipation 52 W

P

D

P

@ TC = 100°C Maximum Power Dissipation 21

D

T

J

T

STG

Collector-to-Emitt e r Volta ge 600 V

Pulse Collecto r Current (Ref .F ig .C. T. 5) 15.6 Clamped Inductive Load current

Diode M ax imum For war d Cu r rent 15.6 Gate-to-Emitt er Volt age ±20 V

Operating Junction and -55 to +150 Stor ag e Temperat ur e Ra ng e °C Soldering Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)

c

15.6

Thermal / Mechanical Characteristics

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θJA

Wt Weight ––– 0.3 ––– g

Junction-to-Case- IGBT ––– ––– 2.4 °C/W Junction-to-Cas e- D iode ––– ––– 8. 8

Junction-to-Ambient, (PCB Mount)

d

––– ––– 50

www.irf.com 1

03/24/03

IRGR3B60KD2

C

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig.

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆

V

GE(th)

gfe Forwa rd Tr a nscond uc tance — 1.9 — S I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

RBSOA R everse Bias Safe Op er ating Area FULL SQUARE

SCSOA Short Cir c uit Saf e O pe r ating Are a 10 — — µs

Erec Reverse Recovery Energy of the Diode — 38 44 µJ t

rr

I

rr

 VCC = 80% (V  When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended

footprint and soldering techniques refer to application note #AN-994.

Collector-to-Emitter Breakdown Voltage

/∆T

Temperature Coeff. of Breakdown Voltage —0.32—V/°C

J

600——V

Collecto r-to-Emitter Voltag e — 1.9 2.4

—2.22.6V

Gate Threshold Voltage 3.5 4.5 5.5

/∆T

Threshol d Voltage temp. coefficient — -8.5 — mV/°

J

Zero Gate Voltage Collector Current — 1.0 150 µA

— 200 500

Diode Forward Volt age Drop — 1.5 1.8 V

—1.51.8

Gate-to-Emitter Leakage Current — — ±100 nA

Parameter Min. Typ. Max. Units Conditions Ref.Fig.

Total Gate C harge (tur n-on) — 13 20 Gate -t o - Em itter C ha r ge (turn-on ) — 1.5 2 .3 nC Gate-to-Collector Charge (turn-on) — 6.6 9.9 Turn- O n Sw itchin g Loss — 62 75 Turn-Off Switching Loss — 39 50 µJ Total Switch ing Los s — 100 120 Turn-On de lay tim e — 18 22 Rise time — 15 21 ns Turn-Off delay time — 110 120 Fall time — 68 80 Turn- O n Sw itchin g Loss — 91 100 Turn-Off Switching Loss — 98 140 µJ Total Switch ing Los s — 190 230 Turn-On de lay tim e — 18 22 Rise time — 17 22 ns Turn-Off delay time — 120 140 Fall time — 91 105 Inpu t Capac itance — 190 — Output Capacitance — 23 — pF Reverse Transfer Cap acitance — 6.6 — f = 1.0MHz

Diode R ev e r s e R ec o v er y Time — 77 84 n s Diode P e ak R ev erse Rec o v er y C ur rent — 4.8 5 .3 A

), VGE = 15V, L = 100µH, RG = 100Ω.

CES

 Energy losses include "tail" and diode reverse recovery.

2 www.irf.com

V

= 0V, IC = 500µA

GE

= 0V, IC = 1mA (25°C-150° C )

V

GE

I

= 3.0A, VGE = 15V

C

= 3.0A, VGE = 15V, TJ = 150°C

I

C

V

= VGE, IC = 250µA

CE

VCE = VGE, IC = 1mA (25°C -150°C) V

= 50V, IC = 3.0A, PW = 80µ s

CE

= 0V, VCE = 600V

V

GE

= 0V, VCE = 600V, TJ = 150°C

V

GE

= 3.0A, VGE = 0V

I

F

I

= 3.0A, VGE = 0V, TJ = 150°C

F

V

= ±20V, VCE = 0V

GE

I

= 3.0A

C

= 400V

V

CC

V

= 15V

GE

= 3.0A, VCC = 400V

I

C

V

= 15V, RG = 100Ω, L = 2.5mH

GE

= 25°C

T

J

I

= 3.0A, VCC = 400V

C

V

GE

T

= 25°C

J

I

= 3.0A, VCC = 400V

C

V

GE

T

= 150°C

J

= 3.0A, VCC = 400V

I

C

V

GE

= 150°C

T

J

V

GE

V

CC

T

= 150°C, IC = 15.6A, Vp = 600V

J

e

= 15V, RG = 100Ω, L = 2.5mH

e

= 15V, RG = 100Ω, L = 2.5mH

= 0V = 30V

VCC=500V,VGE=+15V to 0V,RG = 100 T

= 150°C, Vp = 600 V, RG = 100Ω

J

VCC=360V,VGE = +15V to 0V T

= 150°C

J

V

= 400V, IF = 3.0A, L = 2.5mH

CC

= 15V, RG = 100

V

GE

Ω

5,6,7 9,10,11 9,10,11

12

8

23

CT1

CT4

13,15

WF1,WF2

14,16

CT4 WF1 WF2

22

4 CT2 CT3

WF4

17,18,19

20,21

CT4,WF3

IRGR3B60KD2

10

8

6

) A

(

C

I

4

2

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

100

60

50

40

) W

(

30

t

o

t

P

20

10

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

100

10

10 µs

) A

(

1

C

I

0.1

0.01 1 10 100 1000 10000

V

CE

100 µs

1ms 10ms

DC

(V)

Fig. 3 - Forward SOA

TC = 25°C; T

≤ 150°C

J

10

) A

C

I

1

0

10 100 1000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 150°C; V

GE

=15V

www.irf.com 3

IRGR3B60KD2

25

VGE = 18V VGE = 15V

20

VGE = 12V VGE = 10V VGE = 8.0V

15

) A

(

E C

I

10

5

0

0 2 4 6 8 10 12

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

25

VGE = 18V VGE = 15V

20

VGE = 12V VGE = 10V VGE = 8.0V

15

) A

(

E C

I

10

5

0

0 2 4 6 8 10 12

V

(V)

CE

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

25

VGE = 18V

20

15

) A

(

E C

I

10

5

0

VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

0 2 4 6 8 10 12

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

20

15

) A

(

F

I

10

5

0

0.0 1.0 2.0 3.0 4.0

Fig. 8 - Typ. Diode Forward Characteristics

-40°C 25°C

150°C

VF (V)

tp = 80µs

4 www.irf.com

IRGR3B60KD2

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5101520

V

Fig. 9 - Typical V

GE

ICE = 1.5A I

CE

I

CE

(V)

CE

= 3.0A = 6.0A

vs. V

GE

TJ = -40°C

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5101520

V

GE

ICE = 1.5A I

CE

I

CE

(V)

= 3.0A = 6.0A

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5 101520

V

Fig. 10 - Typical V

GE

ICE = 1.5A I

CE

I

CE

(V)

vs. V

CE

= 3.0A = 6.0A

GE

TJ = 25°C

25

)

Α

20

(

t

n

e

r

u C

15

e

c

r

u

o S

-

10

o

t

-

n

i

a

r D

,

5

D

I

0

0 5 10 15 20

VGS, Gate-t o-Source Voltage (V)

TJ = 25°C

TJ = 150°C

Fig. 11 - Typical V

TJ = 150°C

CE

vs. V

GE

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

www.irf.com 5

IRGR3B60KD2

250

200

)

J

150

µ

(

y

g

r

e

n

100

E

50

0

01234567

IC (A)

Fig. 13 - Typ. Energy Loss vs. I

TJ = 150°C; L=2.5mH; VCE= 400V

RG= 100Ω; VGE= 15V

1000

E

ON

)

s

n

( e

E

OFF

m

i T

100

g

n

i

h

c

i w S

10

0 1 2 3 4 5 6 7 8

IC (A)

C

Fig. 14 - Typ. Switching Time vs. I

td

t

F

t

R

td

OFF

ON

C

TJ = 150°C; L=2.5mH; VCE= 400V

RG= 100Ω; VGE= 15V

250

200

)

150

J

µ

( y

g

r

e

n

100

E

50

0

0 100 200 300 400 500

RG (Ω)

Fig. 15 - Typ. Energy Loss vs. R TJ = 150°C; L=2.5mH; VCE= 400V

ICE= 3.0A; VGE= 15V

E

ON

E

OFF

G

1000

)

s

n

( e m

i T

100

g

n

i

h

c

i w S

td

OFF

t

F

t

R

td

ON

10

0 100 200 300 400 500

RG (Ω)

Fig. 16 - Typ. Switching Time vs. R

TJ = 150°C; L=2.5mH; VCE= 400V

ICE= 3.0A; VGE= 15V

G

6 www.irf.com

IRGR3B60KD2

6

5

4

) A

(

R R

I

3

2

1

0 1 2 3 4 5 6 7 8

IF (A)

Fig. 17 - Typical Diode I

TJ = 150°C

6

RR

R

G =

R

G =

vs. I

100Ω

200

330

470

F

6

5

4

)

Ω

A

(

3

R R

I

2

1

0

0 100 200 300 400 500

RG (

Ω)

Fig. 18 - Typical Diode I

RR

vs. R

G

TJ = 150°C; IF = 3.0A

400

5

4

) A

(

3

R R

I

2

1

0

50 100 150 200 250 300

diF /dt (A/µs)

Fig. 19- Typical Diode I

vs. diF/dt

RR

VCC= 400V; VGE= 15V;

IF = 3.0A; TJ = 150°C

350

300

250

) C

µ

(

200

R R

Q

150

100

50

0

0 50 100 150 200 250 300 350

470

200Ω

330Ω

Ω

diF /dt (A/µs)

Fig. 20 - Typical Diode Q

VCC= 400V; VGE= 15V;TJ = 150°C

100Ω

6.0A

3.0A

1.5A

RR

www.irf.com 7

IRGR3B60KD2

70

100

60

)

50

J

µ

( y

g

r

e

n

40

E

30

20

0 1 2 3 4 5 6 7

Ω

200Ω

330Ω

470Ω

IF (A)

Fig. 21 - Typical Diode E

1000

Cies

)

100

F

p

( e

c

n

a

t

i

c

a

p

a

10

C

1

0 20 40 60 80 100

Coes

Cres

V

CE

(V)

TJ = 150°C

vs. I

RR

16

14

12

10

) V

(

8

E G

V

6

4

2

0

F

300V

0 2 4 6 8 10 12 14

Q G, Total Gate Charge (nC)

400V

Fig. 22- Typ. Capacitance vs. V

VGE= 0V; f = 1MHz

CE

Fig. 23 - Typical Gate Charge vs. V

I

= 3.0A; L = 600µH

CE

GE

8 www.irf.com

IRGR3B60KD2

τ

10

)

C

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.01

D = 0.50

0.1

1

0.20

τ

0.10

0.05

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

2

R

1

2

τ

2

τ

2

Ri (°C/W) τi (sec)

τ

C

0.990

1.412 0.000426

0.000087

0.02

0.01 SINGLE PULSE

( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zt hjc + Tc

t1 , Rectangular Pulse Dur ation (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

100

)

10

C

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.1

1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

R

1

R

2

3

R

2

τ

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

2.301

C

τ

3

4.212 0.001440

τ

3

0.000156

2.278 0.028166

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zt hjc + Tc

0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Dur ation (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

www.irf.com 9

IRGR3B60KD2

0

1K

DUT

L

VCC

80 V

+

-

DUT

480V

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Driver

DC

360V

DUT

Fig.C.T.2 - RBSOA Circuit

diode clamp /

DUT

- 5V

Rg

L

DUT /

DRIVER

VCC

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

V

CC

R =

I

CM

DUT

Rg

VCC

Fig.C.T.5 - Resistive Load Circuit

10 www.irf.com

IRGR3B60KD2

600

tf

500

400

300

Vce (V)

200

100

0

-100

0.3 0.5 0.7 0.9

Eoff Loss

Time (uS)

Vce

90% Ice

5% Vce

5% Ice

Ice

Fig. WF1- Typ. Turn-off Loss Waveform

@ TJ = 150°C using Fig. CT.4

100

9

7.5

6

4.5

3

1.5

0

-1.5

15

600

tr

500

400

300

Ice (A)

Vce (V)

200

100

0

-100

0.8 1 1.2 1.4

Eon Loss

Vce

Ice 90% Ice 10% Ice

5% Vce

Time (uS)

12 11 10 9 8 7 6 5

Ice (A)

4 3 2 1 0

-1

-2

Fig. WF2- Typ. Turn-on Loss Waveform

@ TJ = 150°C using Fig. CT.4

500

50

0

-100

Q

-200

Vf (V)

-300

-400 Peak

I

-500

-600

RR

0.00 0.10 0.20 0.30 0.40 0.50

RR

t

RR

Time (uS)

10% Peak I

RR

Fig. WF3- Typ. Diode Recovery Waveform

@ TJ = 150°C using Fig. CT.4

12

9

6

If (A)

3

0

-3

-6

450

Vce

(V)

CE

V

400

350

300

250

Ice

200

150

100

50

0

30 40 50 60 70

Time (uS)

Fig. WF4- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3

45

40

35

30

25

20

15

10

5

0

www.irf.com 11

(A)

CE

I

IRGR3B60KD2

TO-252AA (D-Pak) Package Outline

Dimensions are shown in millimeters (inches)

6.73 (.265)

6.35 (.250)

5.46 (.215)

5.21 (.205)

1.02 (.040)

1.64 (.025)

1.52 (. 060)

1.15 (. 045)

1.14 (.045)

2X

0.76 (.030)

2.28 (.090)

- A -

4

1 2 3

3X

4.57 (. 180)

1.27 (.050)

0.88 (.035)

6.22 (.245)

5.97 (.235)

- B -

0.89 (.035)

0.64 (.025)

0.25 (.010) M A M B

2.38 (.094)

2.19 (.086)

10.42 (.410)

9.40 (.370)

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIME NSIO N : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).

1.14 (.045)

0.89 (.035)

0.58 (.023)

0.46 (.018)

6.45 (.245)

5.68 (.224)

0.51 (.020) MIN.

0.58 (. 023)

0.46 (. 018)

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

TO-252AA (D-Pak) Part Marking Information

Notes : This part marking information applies to devices produced before 02/26/2001

EXAMPLE:

Notes: T his part marking information applies to devices produced after 02/26/2001

EXAMPLE:

12 www.irf.com

THIS IS AN IRFR120 WITH ASSEMBLY

LOT CODE 9U 1P

THIS IS AN IRFR120 WI T H AS S EMB L Y LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A"

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

INTERNAT IONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

IRFU120

9U 1P

IRF U120

916A

DATE CODE

016

3412

YE AR = 0 WE E K = 16

PART NUMBER

DATE CODE YEAR 9 = 1999 WEEK 16 LINE A

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

IRGR3B60KD2

TR

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS AR E SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

FEED DIRECTION

8.1 ( .318 )

7.9 ( .312 )

TRR

16 mm

TRL

16.3 ( .641 )

15.7 ( .619 )

FEED DIRECTION

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.03/03

www.irf.com 13