Datasheet IRGPS60B120KDP Datasheet (IRF)

IRGPS60B120KDP

G

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

• Super-247 Package.

• Lead-Free

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Significantly Less Snubber Required

• Excellent Current Sharing in Parallel Operation.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 105 IC @ TC = 100°C Continuous Collector Current 60 I

CM

I

LM

IF @ TC = 25°C Diode Continuous Forward Current 120 IF @ TC = 100°C Diode Continuous Forward Current 60 I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 595 PD @ TC = 100°C Maximum Power Dissipation 238 T

J

T

STG

Collector-to-Emitter Voltage 1200 V

Pulsed Collector Current 240 A Clamped Inductive Load Current  240

Diode Maximum Forward Current 240 Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Motor Control Co-Pack IGBT

C

E

N-channel

Super-247™

PD- 95913

V

= 1200V

CES

V

typ. = 2.50V

CE(on)

@ VGE = 15V,

ICE = 60A, Tj=25°C

W

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ––– 6.0 (0.21) ––– g (oz) Le Internal Emitter Inductance (5mm from package) ––– 13 ––– nH

Junction-to-Case - IGBT ––– ––– 0.20 Junction-to-Case - Diode ––– ––– 0.41 °C/W Case-to-Sink, flat, greased surface ––– 0.24 ––– Junction-to-Ambient, typical socket mount ––– ––– 40 Recommended Clip Force 20 (2) ––– ––– N(kgf)

www.irf.com 1

9/22/04

IRGPS60B120KDP

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA

/∆T

Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C)

J

Collector-to-Emitter Saturation Voltage ––– 2.33 2.50 IC = 50A VGE = 15V

––– 2.50 2.75 V I

= 60A

C

––– 2.79 3.1 IC = 50A, TJ = 125°C ––– 3.04 3.5 I

V

∆V

g I

fe

CES

GE(th)

Gate Threshold Voltage 4.0 5.0 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ––– -1 2 – – – mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C)

Forward Transconductance ––– 34.4 ––– S VCE = 50V, IC = 60A, PW=80µs Zero Gate Voltage Collector Current ––– ––– 500 µA VGE = 0V, VCE = 1200V

= 60A, TJ = 125°C

C

––– 650 1350 VGE = 0V, VCE = 1200V, TJ = 125°C

V

FM

Diode Forward Voltage Drop ––– 1.82 2.10 IC = 50A

––– 1.93 2.20 V IC = 60A ––– 1.96 2.20 IC = 50A, TJ = 125°C ––– 2.13 2.40 IC = 60A, TJ = 125°C

I

GES

Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Qg Total Gate Charge (turn-on) ––– 340 510 IC = 60A Qge Gate - Emitter Charge (turn-on) ––– 40 60 nC VCC = 600V Q E E E E E E t

d(on)

t

r

t

d(off)

t

f

C C C

gc on off tot on off tot

ies oes res

Gate - Collector Charge (turn-on) ––– 165 248 VGE = 15V Turn-On Switching Loss ––– 3214 4870 µJ IC = 60A, VCC = 600V Turn-Off Switching Loss ––– 4783 5450 VGE = 15V,RG = 4.7Ω, L =200µH Total Switching Loss ––– 8000 10320 Ls = 150nH TJ = 25°C Turn-On Switching Loss ––– 5032 6890 TJ = 125°C Turn-Off Switching Loss ––– 7457 8385 µJ Energy losses include "tail" and Total Switching Loss ––– 12500 15275 diode reverse recovery. Turn-On Delay Time ––– 72 94 IC = 15A, VCC = 600V Rise Time ––– 32 45 VGE = 15V, RG = 4.7Ω L =200µH Turn-Off Delay Time ––– 366 400 ns Ls = 150nH, TJ = 125°C Fall Time ––– 45 58 Input Capacitance ––– 4300 ––– VGE = 0V Output Capacitance ––– 395 ––– pF VCC = 30V Reverse Transfer Capacitance ––– 160 ––– f = 1.0MHz

TJ = 150°C, IC = 240A, Vp =1200V

RBSOA Reverse Bias Safe Operting Area FULL SQUARE

VCC = 1000V, VGE = +15V to 0V RG = 4.7Ω TJ = 150°C, Vp =1200V

SCSOA Short Circuit Safe Operting Area 10 ––– ––– µs

VCC = 900V, VGE = +15V to 0V,

RG = 4.7Ω Erec Reverse Recovery energy of the diode ––– 3346 ––– µJ TJ = 125°C t

rr

I

rr

Diode Reverse Recovery time ––– 180 ––– ns VCC = 600V, IF = 60A, L =200µH Diode Peak Reverse Recovery Current –– – 50 ––– A VGE = 15V,RG = 4.7Ω, Ls = 150nH

2 www.irf.com

Ref.Fig.

5, 6 7, 9 10

11 9,10 11 ,12

8

Ref.Fig.

23

CT1

CT4 WF1 WF2

13,15

14, 16

CT4 WF1 WF2

22

4

CT2

CT3 WF4

17,18,19

20, 21

CT4,WF3

IRGPS60B120KDP

140

LIMITED BY PACKAGE

120

100

80

) A

(

C

I

60

40

20

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

1000

700

600

500

)

400

W

(

t

o

t

300

P

200

100

0

0 50 100 150 200

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

1000

100

) A

(

10

C

I

DC

1

0.1 1 10 100 1000 10000

V

(V)

CE

Fig. 3 - Forward SOA

TC = 25°C; T

≤ 150°C

JS

2 µs 10 µs

100 µs

1ms 10ms

100

) A

C

I

10

1

10 100 1000 10000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 150°C; V

GE

=15V

www.irf.com 3

IRGPS60B120KDP

120

VGE = 18V

) A

(

E C

I

100

VGE = 15V VGE = 12V VGE = 10V

80

VGE = 8.0V

60

40

20

0

012345

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

120

VGE = 18V

) A

( I

100

E C

VGE = 15V VGE = 12V VGE = 10V

80

VGE = 8.0V

60

40

20

0

012345

V

(V)

CE

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

120

VGE = 18V

) A

(

E C

I

100

VGE = 15V VGE = 12V VGE = 10V

80

VGE = 8.0V

60

40

20

0

012345

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 125°C; tp = 80µs

120

100

80

) A

(

60

F

I

40

20

0

0123

-40°C 25°C 125°C

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

4 www.irf.com

IRGPS60B120KDP

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5101520

V

Fig. 9 - Typical V

GE

ICE = 30A I

CE

I

CE

(V)

CE

= 60A = 120A

vs. V

GE

TJ = -40°C

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5 101520

V

Fig. 10 - Typical V

GE

(V)

CE

vs. V

ICE = 30A I

= 60A

CE

I

= 120A

CE

GE

TJ = 25°C

20 18 16 14

GE

ICE = 30A I

CE

I

CE

(V)

CE

= 60A = 120A

vs. V

GE

) V

12

(

E C

10

V

8 6 4 2

5 101520

V

Fig. 11 - Typical V

TJ = 125°C

500 450 400 350 300

) A

(

250

E C

I

200 150

TJ = 125°C

100

50

0

0 5 10 15 20

TJ = 25°C TJ = 125°C

V

(V)

GE

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

TJ = 25°C

www.irf.com 5

IRGPS60B120KDP

12000

10000

8000

)

J

µ

(

y

g

r

e

n E

6000

4000

2000

0

0 20406080100

E

OFF

IC (A)

Fig. 13 - Typ. Energy Loss vs. I

TJ = 125°C; L=200µH; VCE= 600V

RG= 4.7Ω; VGE= 15V

25000

1000

td

OFF

)

s

n

( e m

i T

100

g

n

i

h

c

E

ON

C

i w S

10

20 40 60 80 100

Fig. 14 - Typ. Switching Time vs. I

td

ON

t

F

t

R

IC (A)

C

TJ = 125°C; L=200µH; VCE= 600V

RG= 4.7Ω; VGE= 15V

10000

td

t

R

t

OFF

ON

F

G

20000

E

ON

)

J

15000

µ

( y

g

r

e

n

10000

E

5000

0

0 50 100 150

RG (Ω)

E

OFF

Fig. 15 - Typ. Energy Loss vs. R TJ = 125°C; L=200µH; VCE= 600V

ICE= 60A; VGE= 15V

)

s

1000

n

( e m

i T

g

n

i

h

c

i w

100

S

10

0 50 100 150

RG (Ω)

G

Fig. 16 - Typ. Switching Time vs. R

TJ = 125°C; L=200µH; VCE= 600V

ICE= 60A; VGE= 15V

6 www.irf.com

IRGPS60B120KDP

70

R

4.7

Ω

R

R R

G =

G = G =

22

47 100

Ω

IF (A)

RR

60

50

)

40

A

(

R R

I

30

20

10

0

0 20 40 60 80 100

Fig. 17 - Typical Diode I

TJ = 125°C

60

R

4.7

G =

50

40

R

22

Ω

) A

(

30

R R

I

20

10

0

G =

R

47

Ω

G =

R

100

Ω

G =

0 500 1000 1500

diF /dt (A/µs)

vs. I

Ω

60

50

40

) A

(

30

R R

I

20

10

0

0 50 100 150

RG (

Ω)

F

Fig. 18 - Typical Diode I

RR

vs. R

G

TJ = 125°C; IF = 60A

12

4.7

11

22

47

Ω

diF /dt (A/µs)

10

9

)

8

C

µ

(

7

R R

100

6

Q

5 4 3 2

0 500 1000 1500

Ω

90A

60A

30A

Fig. 19- Typical Diode I

VCC= 600V; VGE= 15V;

vs. diF/dt

RR

Fig. 20 - Typical Diode Q

RR

VCC= 600V; VGE= 15V;TJ = 125°C

ICE= 60A; TJ = 125°C

www.irf.com 7

IRGPS60B120KDP

4000

3500

3000

)

J

µ

( y

g

r

e

n E

2500

2000

1500

1000

500

0

4.7

22

Ω

47

Ω

100

0 20 40 60 80 100

Ω

IF (A)

Fig. 21 - Typical Diode E

10000

)

1000

F

p

( e

c

n

a

t

i

c

a

p

a

100

C

10

0 20 40 60 80 100

V

CE

Cies

Coes

Cres

(V)

TJ = 125°C

vs. I

RR

) V

(

E G

V

F

16 14 12 10

8 6 4 2 0

0 50 100 150 200 250 300 350 400

Q G, Total Gate Charge (nC)

600V

800V

Fig. 22- Typ. Capacitance vs. V

VGE= 0V; f = 1MHz

CE

Fig. 23 - Typical Gate Charge vs. V

I

= 60A; L = 600µH

CE

GE

8 www.irf.com

IRGPS60B120KDP

10

)

C

J

h

t

1

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

D = 0.50

0.20

0.1

0.01

0.10

0.05

0.01

0.02

1E-005 0.0001 0.001 0.01 0.1 1

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 24. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)

10

)

C

J

h

t

1

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

D = 0.50

0.20

0.1

0.01

0.10

0.05

0.01

0.02

1E-005 0.0001 0.001 0.01 0.1 1

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 25. Normalized Transient Thermal Impedance, Junction-to-Case (DIODE)

www.irf.com 9

IRGPS60B120KDP

L

0

1K

DUT

VCC

80 V

L

DUT

1000V

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-on)

Driver

D C

900V

DUT

Fig.C.T.2 - RBSOA Circuit

diode clamp /

DUT

- 5V

Rg

L

DUT /

DRIVER

Fig.C.T.3 - RBSOA Circuit Fig.C.T.4 - RBSOA Circuit

V

CC

R =

I

CM

DUT

Rg

VCC

Fig.C.T.5 - RBSOA Circuit

10 www.irf.com

IRGPS60B120KDP

ICE (A)

RRQRR

CEICE

Fig. WF1 - Typ. Turn-off Los s Waveform

@ Tj=125°C using Fig. CT.4

900 800 700

90% I

CE

600

tr

500

(V)

400

CE

V

300 200

5% V

100

0

CE

5% I

Eoff Loss

CE

-100

-0.50 0.50 1.50 2.50

Time (µs)

Fig. W F .3 - Typ. Diode Recovery

Waveform

@ Tj=125°C us i ng Fig. CT .4

90 80 70 60 50 40 30 20 10 0

-10

Fig. WF2 - T yp. Turn-On Loss Waveform

@ T j=125 ° C u sing F ig. CT.4

800 700

600

TEST CURRENT

500

(V)

CE

V

400 300 200

90% test current

10% test current

tr

100

0

Eon Loss

-100

4.10 4.30 4.50 4.70

Time (µs)

Fig. WF.4 - Typ. S.C. Waveform

@ TC= 1 50° C using Fig. CT .3

5% V

120 105

90

75 60

(A)

CE

45

I

30

CE

15 0

-15

400

200

0

t

-200

(V)

F

V

-400

Peak

-600

I

RR

-800

-1000

-0.25 0.25 0.75

time (µS)

10%

Peak

I

RR

80

60

40

20

0

-20

-40

-60

(A)

F

I

1000

900 800 700 600

(V)

500

CE

V

400 300 200 100

0

-5.00 0.00 5.00 10.00 15.00

V

time (µS)

500 450 400 350 300 250 200 150 100 50 0

www.irf.com 11

(A)

CE

I

IRGPS60B120KDP

Super-247™ Package Outline

5.50 [.216]

4.50 [.178]

2X R

3.00 [.118]

2.00 [.079]

20.80 [.818]

19.80 [.780]

16.10 [.632]

15.10 [.595]

A

0.13 [.005]

2.15 [.084]

1.45 [.058]

4

16.10 [.633]

15.50 [.611]

0.25 [.010]

13.90 [.547]

13.30 [.524]

BA

1.30 [.051]

4

0.70 [.028]

C

14.80 [.582]

13.80 [.544]

5.45 [.215] 2X

12

3

4.25 [.167]

3.85 [.152]

1.60 [.062]

3X

1.45 [.058]

0.25 [.010] B A

B

Ø 1.60 [.063]

1.30 [.051]

3X

1.10 [.044]

NOTES :

1. DIMENSIONING A ND TOLERANCING PER ASME Y14.5M-1994.

2. DIMENS IONS ARE S HOWN IN MIL L I ME T E RS [INCHES ]

3. CONT ROLLING DIMENSION: MILLIMETER

4. OUTLINE CO NFORM S TO JEDEC OUTLINE TO-274AA

2.35 [.092]

1.65 [.065]

SEC TI ON E-E

MAX.

Super-247 (TO-274AA) Part Marking Information

EXAMPLE: THIS IS AN IRFPS37N50A WITH

Notes:



VCC = 80% (V

 Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 105A.

), VGE = 20V, L = 100 µH, RG = 4.7Ω.

CES

ASSEMBLY LOT COD E 178 9

ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C"

INTERNATIONAL RECTIFIER LOGO

ASSEMBLY LOT CODE

Note: "P" in assembly line position

indicates "Lead-Fr e e"

This product has been designed and qualified for the industrial market.

PART NUMBER

IRFPS37N50A

719C

89

17

DATE CODE YEAR 7 = 1997

WEEK 19 LINE C

TOP

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

EE

LE AD AS S IGNME NT S

MOSFE T

1 - GAT E 2 - DRAIN 3 - SOUR CE 4 - DRAIN

IGBT

1 - G ATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.09/04

12 www.irf.com

Datasheet IRGPS60B120KDP Datasheet (IRF) [ru]