Page 1

IRGPS60B120KDP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 105
IC @ TC = 100°C Continuous Collector Current 60
I
CM
I
LM
IF @ TC = 25°C Diode Continuous Forward Current 120
IF @ TC = 100°C Diode Continuous Forward Current 60
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 595
PD @ TC = 100°C Maximum Power Dissipation 238
T
J
T
STG
Collector-to-Emitter Voltage 1200 V
Pulsed Collector Current 240 A
Clamped Inductive Load Current 240
Diode Maximum Forward Current 240
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Motor Control Co-Pack IGBT
C
E
N-channel
Super-247™
PD- 95913
V
= 1200V
CES
V
typ. = 2.50V
CE(on)
@ VGE = 15V,
ICE = 60A, Tj=25°C
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ––– 6.0 (0.21) ––– g (oz)
Le Internal Emitter Inductance (5mm from package) ––– 13 ––– nH
Junction-to-Case - IGBT ––– ––– 0.20
Junction-to-Case - Diode ––– ––– 0.41 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 40
Recommended Clip Force 20 (2) ––– ––– N(kgf)
www.irf.com 1
9/22/04
Page 2

IRGPS60B120KDP
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA
/∆T
Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C)
J
Collector-to-Emitter Saturation Voltage ––– 2.33 2.50 IC = 50A VGE = 15V
––– 2.50 2.75 V I
= 60A
C
––– 2.79 3.1 IC = 50A, TJ = 125°C
––– 3.04 3.5 I
V
∆V
g
I
fe
CES
GE(th)
GE(th)
Gate Threshold Voltage 4.0 5.0 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ––– -1 2 – – – mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C)
Forward Transconductance ––– 34.4 ––– S VCE = 50V, IC = 60A, PW=80µs
Zero Gate Voltage Collector Current ––– ––– 500 µA VGE = 0V, VCE = 1200V
= 60A, TJ = 125°C
C
––– 650 1350 VGE = 0V, VCE = 1200V, TJ = 125°C
V
FM
Diode Forward Voltage Drop ––– 1.82 2.10 IC = 50A
––– 1.93 2.20 V IC = 60A
––– 1.96 2.20 IC = 50A, TJ = 125°C
––– 2.13 2.40 IC = 60A, TJ = 125°C
I
GES
Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ––– 340 510 IC = 60A
Qge Gate - Emitter Charge (turn-on) ––– 40 60 nC VCC = 600V
Q
E
E
E
E
E
E
t
d(on)
t
r
t
d(off)
t
f
C
C
C
gc
on
off
tot
on
off
tot
ies
oes
res
Gate - Collector Charge (turn-on) ––– 165 248 VGE = 15V
Turn-On Switching Loss ––– 3214 4870 µJ IC = 60A, VCC = 600V
Turn-Off Switching Loss ––– 4783 5450 VGE = 15V,RG = 4.7Ω, L =200µH
Total Switching Loss ––– 8000 10320 Ls = 150nH TJ = 25°C
Turn-On Switching Loss ––– 5032 6890 TJ = 125°C
Turn-Off Switching Loss ––– 7457 8385 µJ Energy losses include "tail" and
Total Switching Loss ––– 12500 15275 diode reverse recovery.
Turn-On Delay Time ––– 72 94 IC = 15A, VCC = 600V
Rise Time ––– 32 45 VGE = 15V, RG = 4.7Ω L =200µH
Turn-Off Delay Time ––– 366 400 ns Ls = 150nH, TJ = 125°C
Fall Time ––– 45 58
Input Capacitance ––– 4300 ––– VGE = 0V
Output Capacitance ––– 395 ––– pF VCC = 30V
Reverse Transfer Capacitance ––– 160 ––– f = 1.0MHz
TJ = 150°C, IC = 240A, Vp =1200V
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
VCC = 1000V, VGE = +15V to 0V
RG = 4.7Ω
TJ = 150°C, Vp =1200V
SCSOA Short Circuit Safe Operting Area 10 ––– ––– µs
VCC = 900V, VGE = +15V to 0V,
RG = 4.7Ω
Erec Reverse Recovery energy of the diode ––– 3346 ––– µJ TJ = 125°C
t
rr
I
rr
Diode Reverse Recovery time ––– 180 ––– ns VCC = 600V, IF = 60A, L =200µH
Diode Peak Reverse Recovery Current –– – 50 ––– A VGE = 15V,RG = 4.7Ω, Ls = 150nH
2 www.irf.com
Ref.Fig.
5, 6
7, 9
10
11
9,10
11 ,12
8
Ref.Fig.
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
Page 3

IRGPS60B120KDP
140
LIMITED BY PACKAGE
120
100
80
)
A
(
C
I
60
40
20
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
700
600
500
)
400
W
(
t
o
t
300
P
200
100
0
0 50 100 150 200
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
100
)
A
(
10
C
I
DC
1
0.1
1 10 100 1000 10000
V
(V)
CE
Fig. 3 - Forward SOA
TC = 25°C; T
≤ 150°C
JS
2 µs
10 µs
100 µs
1ms
10ms
100
)
A
C
I
10
1
10 100 1000 10000
V
(V)
CE
Fig. 4 - Reverse Bias SOA
TJ = 150°C; V
GE
=15V
www.irf.com 3
Page 4

IRGPS60B120KDP
120
VGE = 18V
)
A
(
E
C
I
100
VGE = 15V
VGE = 12V
VGE = 10V
80
VGE = 8.0V
60
40
20
0
012345
V
(V)
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
120
VGE = 18V
)
A
(
I
100
E
C
VGE = 15V
VGE = 12V
VGE = 10V
80
VGE = 8.0V
60
40
20
0
012345
V
(V)
CE
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
120
VGE = 18V
)
A
(
E
C
I
100
VGE = 15V
VGE = 12V
VGE = 10V
80
VGE = 8.0V
60
40
20
0
012345
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
120
100
80
)
A
(
60
F
I
40
20
0
0123
-40°C
25°C
125°C
VF (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
4 www.irf.com
Page 5

IRGPS60B120KDP
20
18
16
14
12
)
V
(
10
E
C
V
8
6
4
2
0
5101520
V
Fig. 9 - Typical V
GE
ICE = 30A
I
CE
I
CE
(V)
CE
= 60A
= 120A
vs. V
GE
TJ = -40°C
20
18
16
14
12
)
V
(
10
E
C
V
8
6
4
2
0
5 101520
V
Fig. 10 - Typical V
GE
(V)
CE
vs. V
ICE = 30A
I
= 60A
CE
I
= 120A
CE
GE
TJ = 25°C
20
18
16
14
GE
ICE = 30A
I
CE
I
CE
(V)
CE
= 60A
= 120A
vs. V
GE
)
V
12
(
E
C
10
V
8
6
4
2
5 101520
V
Fig. 11 - Typical V
TJ = 125°C
500
450
400
350
300
)
A
(
250
E
C
I
200
150
TJ = 125°C
100
50
0
0 5 10 15 20
TJ = 25°C
TJ = 125°C
V
(V)
GE
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
TJ = 25°C
www.irf.com 5
Page 6

IRGPS60B120KDP
12000
10000
8000
)
J
µ
(
y
g
r
e
n
E
6000
4000
2000
0
0 20406080100
E
OFF
IC (A)
Fig. 13 - Typ. Energy Loss vs. I
TJ = 125°C; L=200µH; VCE= 600V
RG= 4.7Ω; VGE= 15V
25000
1000
td
OFF
)
s
n
(
e
m
i
T
100
g
n
i
h
c
E
ON
C
i
w
S
10
20 40 60 80 100
Fig. 14 - Typ. Switching Time vs. I
td
ON
t
F
t
R
IC (A)
C
TJ = 125°C; L=200µH; VCE= 600V
RG= 4.7Ω; VGE= 15V
10000
td
td
t
R
t
OFF
ON
F
G
20000
E
ON
)
J
15000
µ
(
y
g
r
e
n
10000
E
5000
0
0 50 100 150
RG (Ω)
E
OFF
Fig. 15 - Typ. Energy Loss vs. R
TJ = 125°C; L=200µH; VCE= 600V
ICE= 60A; VGE= 15V
)
s
1000
n
(
e
m
i
T
g
n
i
h
c
i
w
100
S
10
0 50 100 150
RG (Ω)
G
Fig. 16 - Typ. Switching Time vs. R
TJ = 125°C; L=200µH; VCE= 600V
ICE= 60A; VGE= 15V
6 www.irf.com
Page 7

IRGPS60B120KDP
70
R
4.7
Ω
R
R
R
G =
G =
G =
G =
22
47
100
Ω
Ω
Ω
IF (A)
RR
60
50
)
40
A
(
R
R
I
30
20
10
0
0 20 40 60 80 100
Fig. 17 - Typical Diode I
TJ = 125°C
60
R
4.7
G =
50
40
R
22
Ω
)
A
(
30
R
R
I
20
10
0
G =
R
47
Ω
G =
R
100
Ω
G =
0 500 1000 1500
diF /dt (A/µs)
vs. I
Ω
60
50
40
)
A
(
30
R
R
I
20
10
0
0 50 100 150
RG (
Ω)
F
Fig. 18 - Typical Diode I
RR
vs. R
G
TJ = 125°C; IF = 60A
12
4.7
11
22
47
Ω
Ω
Ω
diF /dt (A/µs)
10
9
)
8
C
µ
(
7
R
R
100
6
Q
5
4
3
2
0 500 1000 1500
Ω
90A
60A
30A
Fig. 19- Typical Diode I
VCC= 600V; VGE= 15V;
vs. diF/dt
RR
Fig. 20 - Typical Diode Q
RR
VCC= 600V; VGE= 15V;TJ = 125°C
ICE= 60A; TJ = 125°C
www.irf.com 7
Page 8

IRGPS60B120KDP
4000
3500
3000
)
J
µ
(
y
g
r
e
n
E
2500
2000
1500
1000
500
0
4.7
22
Ω
47
Ω
100
0 20 40 60 80 100
Ω
Ω
IF (A)
Fig. 21 - Typical Diode E
10000
)
1000
F
p
(
e
c
n
a
t
i
c
a
p
a
100
C
10
0 20 40 60 80 100
V
CE
Cies
Coes
Cres
(V)
TJ = 125°C
vs. I
RR
)
V
(
E
G
V
F
16
14
12
10
8
6
4
2
0
0 50 100 150 200 250 300 350 400
Q G, Total Gate Charge (nC)
600V
800V
Fig. 22- Typ. Capacitance vs. V
VGE= 0V; f = 1MHz
CE
Fig. 23 - Typical Gate Charge vs. V
I
= 60A; L = 600µH
CE
GE
8 www.irf.com
Page 9

IRGPS60B120KDP
10
)
C
J
h
t
1
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.01
0.02
1E-005 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
( THERMAL RESPONSE )
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 24. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
10
)
C
J
h
t
1
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.01
0.02
1E-005 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
( THERMAL RESPONSE )
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 25. Normalized Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com 9
Page 10

IRGPS60B120KDP
L
0
1K
DUT
VCC
80 V
L
DUT
1000V
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-on)
Driver
D
C
900V
DUT
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
- 5V
Rg
L
DUT /
DRIVER
Fig.C.T.3 - RBSOA Circuit Fig.C.T.4 - RBSOA Circuit
V
CC
R =
I
CM
DUT
Rg
VCC
VCC
Fig.C.T.5 - RBSOA Circuit
10 www.irf.com
Page 11

IRGPS60B120KDP
Fig. WF1 - Typ. Turn-off Los s Waveform
@ Tj=125°C using Fig. CT.4
900
800
700
90% I
CE
600
tr
500
(V)
400
CE
V
300
200
5% V
100
0
CE
5% I
Eoff Loss
CE
-100
-0.50 0.50 1.50 2.50
Time (µs)
Fig. W F .3 - Typ. Diode Recovery
Waveform
@ Tj=125°C us i ng Fig. CT .4
90
80
70
60
50
40
30
20
10
0
-10
Fig. WF2 - T yp. Turn-On Loss Waveform
@ T j=125 ° C u sing F ig. CT.4
800
700
600
TEST CURRENT
500
(V)
CE
V
400
300
200
90% test current
10% test current
tr
100
0
Eon Loss
-100
4.10 4.30 4.50 4.70
Time (µs)
Fig. WF.4 - Typ. S.C. Waveform
@ TC= 1 50° C using Fig. CT .3
5% V
120
105
90
75
60
(A)
CE
45
I
30
CE
15
0
-15
400
200
0
t
-200
(V)
F
V
-400
Peak
-600
I
RR
-800
-1000
-0.25 0.25 0.75
time (µS)
10%
Peak
I
RR
80
60
40
20
0
-20
-40
-60
(A)
F
I
1000
900
800
700
600
(V)
500
CE
V
400
300
200
100
0
-5.00 0.00 5.00 10.00 15.00
V
time (µS)
500
450
400
350
300
250
200
150
100
50
0
www.irf.com 11
(A)
CE
I
Page 12

IRGPS60B120KDP
Super-247™ Package Outline
5.50 [.216]
4.50 [.178]
2X R
3.00 [.118]
2.00 [.079]
20.80 [.818]
19.80 [.780]
16.10 [.632]
15.10 [.595]
A
0.13 [.005]
2.15 [.084]
1.45 [.058]
4
16.10 [.633]
15.50 [.611]
0.25 [.010]
13.90 [.547]
13.30 [.524]
BA
1.30 [.051]
4
0.70 [.028]
C
14.80 [.582]
13.80 [.544]
5.45 [.215]
2X
12
3
4.25 [.167]
3.85 [.152]
1.60 [.062]
3X
1.45 [.058]
0.25 [.010] B A
B
Ø 1.60 [.063]
1.30 [.051]
3X
1.10 [.044]
NOTES :
1. DIMENSIONING A ND TOLERANCING PER ASME Y14.5M-1994.
2. DIMENS IONS ARE S HOWN IN MIL L I ME T E RS [INCHES ]
3. CONT ROLLING DIMENSION: MILLIMETER
4. OUTLINE CO NFORM S TO JEDEC OUTLINE TO-274AA
2.35 [.092]
1.65 [.065]
SEC TI ON E-E
MAX.
Super-247 (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
Notes:
VCC = 80% (V
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
), VGE = 20V, L = 100 µH, RG = 4.7Ω.
CES
ASSEMBLY LOT COD E 178 9
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL RECTIFIER
LOGO
ASSEMBLY LOT CODE
Note: "P" in assembly line position
indicates "Lead-Fr e e"
This product has been designed and qualified for the industrial market.
PART NUMBER
IRFPS37N50A
719C
89
17
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
TOP
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
EE
LE AD AS S IGNME NT S
MOSFE T
1 - GAT E
2 - DRAIN
3 - SOUR CE
4 - DRAIN
IGBT
1 - G ATE
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
12 www.irf.com
Page 13