Page 1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low V
• Low Switching Losses
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for I
• Positive V
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
Trench IGBT Technology
CE (on)
Temperature Coefficient.
CE (on)
LM
G
n-channel
IRGPS4067DPbF
C
tSC ≥ 5µs, T
E
I
C(Nominal)
V
CE(on)
V
= 600V
CES
= 120A
J(max)
typ. = 1.70V
= 175°C
Benefits
C
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low V
and Low Switching Losses
CE (ON)
• Rugged Transient Performance for Increased Reliability
E
C
G
• Excellent Current Sharing in Parallel Operation
• Low EMI
Super-247
GC E
Gate Collector Emitter
Absolute Maximum Ratings
Parameter Max. Units
V
CES
@ TC = 25°C Continuous Collector Current
I
C
IC @ TC = 100°C Continuous Collector Current
I
NOMINAL
I
CM
I
LM
@ TC = 25°C Diode Continous Forward Current 240
I
F
@ TC = 100°C Diode Continous Forward Current 160
I
F
I
FM
V
GE
@ TC = 25°C Maximum Power Dissipation 750 W
P
D
@ TC = 100°C Maximum Power Dissipation 375
P
D
T
J
T
STG
Collector-to-Emitter Voltage 600 V
g
240
g
160
Nominal Current 120
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
Operating Junction and -55 to +175
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
d
c
360
480 A
480
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
(IGBT)
(Diode)
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
f
f
––– ––– 0.20
––– ––– 0.63 °C/W
1
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Page 2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parame te r Min. Typ. Max . Units Conditions
V
(BR)CES
∆
V
V
CE(on)
V
GE (t h)
∆
V
(BR )CES
GE ( t h )
/∆T
/∆TJ
Collector-to-Emitter B reakdown Vol tage
J
T emperat ur e Co eff . o f B r eakdown Vo lt age
Collector-to-Emitter Saturation Voltage — 2.15 — V IC = 120A, VGE = 15V, TJ = 150°C
Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 5.6mA
Threshold Voltage temp. coefficient — -17 — mV/°C VCE = VGE, IC = 5.6mA (25°C - 175°C)
gfe Forward Transconductance — 77 — S V
I
V
I
CES
FM
GE S
Collector-to-Emitter Leakage Current — 1.0 150 µA VGE = 0V, VCE = 600V
Diode Forward Voltage Drop — 2.4 3.0 V IF = 120A
Gate-to-Emitter Leakage Current — — ±400 nA VGE = ±20V
600 — — V V
—0.27—V/°CVGE = 0V, IC = 4.0mA (25°C-175°C)
— 1.70 2.05 I
—2.20— I
—2.3—mAV
—1.9— I
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max.hUnits
Q
g
Q
ge
Q
gc
E
on
E
off
E
tota l
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tota l
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
SCSOA Short Circuit Safe Operating Area 5 — — µs V
Erec Reverse Recovery Energy of the Diode — 500 — µJ T
t
rr
I
rr
Total Gate Charge (turn-on) — 240 360 IC = 120A
Gate-to-Emitter Charge (turn-on) — 70 105 nC VGE = 15V
Gate-to-Collector Charge (turn-on) — 90 135 VCC = 400V
Turn-On Switching Loss — 5750 7990 IC = 120A, VCC = 400V, VGE = 15V
Turn-Off Switching Loss — 3430 4360 µJ RG = 4.7Ω, L = 66µH, TJ = 25°C
Total Switching Loss — 9180 12350
Turn-On delay time — 80 100 IC = 120A, VCC = 400V, VGE = 15V
Rise time — 70 125 ns RG = 4.7Ω, L = 66µH, TJ = 25°C
Turn-Off delay time — 190 220
Fall time — 40 60
Turn-On Switching Loss — 7740 — IC = 120A, VCC = 400V, VGE=15V
Turn-Off Switching Loss — 4390 — µJ RG=4.7Ω, L=66µH, TJ = 175°C
Total Switching Loss — 12130 —
Turn-On delay time — 80 — IC = 120A, VCC = 400V, VGE = 15V
Rise time — 75 — ns RG = 4.7Ω, L = 66µH
Turn-Off delay time — 230 — TJ = 175°C
Fall time — 55 —
Input Capacitance — 7750 — pF VGE = 0V
Output Capacitance — 550 — VCC = 30V
Reverse Transfer Capacitance — 225 — f = 1.0Mhz
Diode Reverse Recov ery Time — 130 — ns VCC = 400V, IF = 120A
Peak Reverse Recovery Current — 36 — A VGE = 15V, Rg = 4.7Ω, L =100µH
IRGPS4067DPbF
= 0V, IC = 100µA
GE
= 120A, VGE = 15V, TJ = 25°C
C
= 120A, VGE = 15V, TJ = 175°C
C
= 50V, IC = 120A
CE
= 0V, VCE = 600V, TJ = 175°C
GE
= 120A, TJ = 175°C
F
Energy loss es include tail & diode reverse recovery
Energy loss es include tail & diode reverse recovery
T
= 175°C, IC = 480A
J
= 480V, Vp =600V
CC
Rg = 4.7Ω, V
= 400V, Vp =600V
CC
Rg = 4.7Ω, V
= 175°C
J
e
Conditions
= +20V to 0V
GE
= +15V to 0V
GE
Notes:
V
= 80% (V
CC
), VGE = 20V, L = 66µH, RG = 4.7Ω, tested in production ILM ≤ 400A.
CES
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
is measured at TJ of approximately 90°C.
θ
(BR)CES
safely.
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is 120A. Note that current limitations arising from heating of the device leads may occur.
Maximum limits are based on statistical sample size characterization.
2
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 27, 2014
Page 3
250
200
IRGPS4067DPbF
220
200
180
160
)
A
(
t
n
e
r
r
u
C
d
a
o
L
140
120
100
Square Wave:
V
CC
80
60
40
20
0.1 1 10 100
I
Diode as specified
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
800
700
600
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 375W
150
)
A
(
C
I
100
50
0
25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
100
)
A
(
10
C
I
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10 100 1000 10000
VCE (V)
10µsec
100µsec
1msec
DC
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; V
GE
=15V
500
)
W
(
t
400
o
t
P
300
200
100
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 3 - Power Dissipation vs. Case
Temperature
1000
100
)
A
C
I
10
1
10 100 1000
V
(V)
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; V
GE
=20V
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 27, 20143
Page 4
IRGPS4067DPbF
350
300
250
VGE = 18V
)
200
A
(
E
C
150
I
100
50
0
0 1 2 3 4 5 6 7 8 9 10
V
CE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
(V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
350
300
250
VGE = 18V
)
200
A
(
E
C
150
I
100
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
350
300
250
)
200
A
(
E
C
150
I
100
50
0
0 2 4 6 8 10
V
CE
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
(V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
600
-40°C
25°C
175°C
)
A
(
I
500
400
300
F
200
50
0
0 2 4 6 8 10
V
(V)
CE
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
25
20
15
)
V
(
E
C
V
10
5
0
5 101520
V
Fig. 10 - Typical V
GE
(V)
CE
vs. V
ICE = 60A
I
= 120A
CE
I
= 195A
CE
GE
TJ = -40°C
100
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
Fig. 9 - Typ. Diode Forward Characteristics
tp = 80µs
25
20
15
)
V
(
E
C
V
10
5
0
5 101520
V
Fig. 11 - Typical V
GE
ICE = 60A
I
CE
I
CE
(V)
CE
= 120A
= 195A
vs. V
GE
TJ = 25°C
4
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Page 5
IRGPS4067DPbF
25
20
15
)
V
(
E
C
V
10
5
0
5 101520
Fig. 12 - Typical V
TJ = 175°C
30000
25000
20000
)
J
µ
(
y
15000
g
r
e
n
E
10000
5000
0
0 50 100 150 200 250
Fig. 14 - Typ. Energy Loss vs. I
TJ = 175°C; L = 66µH; V
30000
ICE = 60A
I
= 120A
CE
I
= 195A
CE
V
(V)
GE
vs. V
CE
E
ON
E
IC (A)
= 400V, RG = 4.7Ω; V
CE
GE
OFF
350
)
A
300
(
t
n
e
r
r
250
u
C
r
e
t
200
t
i
m
E
-
150
o
t
-
r
o
t
c
100
e
l
l
o
C
,
50
C
I
TJ = -40°C
TJ = 25°C
TJ = 175°C
0
3456789101112
V
Gate-to-Emitter Voltage (V)
GE,
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
1000
td
OFF
)
s
n
(
e
m
i
T
100
g
n
i
h
c
i
w
S
10
C
GE
= 15V
TJ = 175°C; L = 66µH; V
10000
td
ON
t
F
t
R
0 50 100 150 200 250
IC (A)
Fig. 15 - Typ. Switching Time vs. I
= 400V, RG = 4.7Ω; V
CE
C
GE
= 15V
25000
20000
)
J
µ
(
y
15000
g
r
e
n
E
10000
5000
E
ON
E
OFF
0
0 20406080100
Fig. 16 - Typ. Energy Loss vs. R
TJ = 175°C; L = 66µH; V
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 27, 20145
= 400V, I
CE
Rg (Ω)
= 120A; V
CE
)
s
1000
n
(
e
m
i
T
g
n
i
h
c
i
w
100
S
G
= 15V
GE
TJ = 175°C; L = 66µH; V
td
OFF
td
ON
t
F
10
0 20 40 60 80 100
RG (Ω)
Fig. 17 - Typ. Switching Time vs. R
= 400V, I
CE
= 120A; V
CE
t
R
G
= 15V
GE
Page 6
IRGPS4067DPbF
40
R
4.7Ω
G =
35
R
10Ω
)
A
(
30
R
R
I
25
20
G =
R
20Ω
G =
R
50Ω
G =
0 50 100 150 200 250
IF (A)
Fig. 18 - Typ. Diode IRR vs. I
TJ = 175°C
40
35
40
35
)
A
(
30
R
R
I
25
20
0 10 20 30 40 50
RG (Ω)
F
Fig. 19 - Typ. Diode IRR vs. R
G
TJ = 175°C
4500
4000
4.7Ω
)
A
(
30
R
R
I
25
20
350 400 450 500 550 600
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 120A; TJ = 175°C
800
700
600
)
J
µ
500
(
y
g
r
e
n
E
400
300
RG = 4.7
RG = 10
Ω
Ω
RG = 20
Ω
)
3500
C
n
(
Q
R
R
3000
2500
2000
240A
50Ω
200 300 400 500 600 700 800
10Ω
20Ω
diF /dt (A/µs)
120A
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
18
16
14
12
)
s
µ
(
10
e
m
i
T
8
6
60A
1000
900
800
700
600
500
400
C
u
r
r
e
n
t
(
A
)
200
100
0 50 100 150 200 250
Fig. 22 - Typ. Diode ERR vs. I
RG = 50
IF (A)
Ω
F
TJ = 175°C
6
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4
2
8 10121416
VGE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
300
200
Page 7
IRGPS4067DPbF
τ
τ
100000
)
10000
F
p
(
e
c
n
a
t
i
c
a
p
a
1000
C
100
0 20 40 60 80 100
V
CE
Fig. 24 - Typ. Capacitance vs. V
VGE= 0V; f = 1MHz
1
)
0.1
C
J
h
t
Z
(
e
s
n
o
0.01
p
s
e
R
l
a
m
r
e
h
0.001
T
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
(V)
Cies
Coes
Cres
CE
R
1
R
τ
J
τ
J
τ
1
Ci= τi/Ri
1
τ
1
t1 , Rectangular Pulse Duration (sec)
16
V
V
CES
CES
= 300V
= 400V
14
)
V
(
e
12
g
a
t
l
o
V
10
r
e
t
t
i
8
m
E
o
t
-
6
e
t
a
G
4
,
E
G
V
2
0
0 50 100 150 200 250
Q G, Total Gate Charge (nC)
Fig. 25 - Typical Gate Charge vs. V
I
= 120A; L = 100µH
CE
R
R
R
2
3
R
R
2
3
τ
τ
2
3
τ
τ
2
3
Ri (°C/W) τi (sec)
4
R
4
0.04418 0.000167
τ
C
τ
4
0.01606 0.000167
τ
4
0.06827 0.000873
0.06827 0.007828
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
GE
D = 0.50
)
C
J
h
t
Z
(
e
s
n
o
0.01
p
s
e
R
l
a
m
r
e
h
0.001
T
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
R
R
1
2
R
1
τ
2
3
R
R
2
3
τ
3
τ
τ
2
3
Ri (°C/W) τi (sec)
4
R
4
0.00441 0.000008
τ
C
τ
0.22783 0.000836
4
τ
4
0.27340 0.004982
0.12494 0.026498
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 27, 20147
Page 8
IRGPS4067DPbF
e
L
L
80 V
0
VCCDUT
1K
+
-
Rg
DUT
VCC
Fig.C.T.1 - Gate Charge Circuit (turn-off)
4X
DC
VCC
DUT
SCSOA
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
-5V
DUT /
DRIVER
Rg
Fig.C.T.4 - Switching Loss Circuit
C force
VCC
R =
DUT
Rg
Fig.C.T.5 - Resistive Load Circuit
8
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VCC
ICM
VCC
G force
100K
D1 22K
C sens
DUT
0.0075µF
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
Page 9
IRGPS4067DPbF
700
tf
600
500
400
(V)
300
CE
V
200
100
5%
V
CE
90% I
10% I
CE
CE
0
Eof f Lo s s
-100
-200 -100 0 100 200 300 400 500
time(ns)
210
180
150
120
90
60
30
0
-30
(A)
CE
I
700
tr
600
TEST CURRENT
500
400
(V)
CE
V
300
200
10 % t e s t
cur rent
90% tes t
cur rent
5% V
100
0
Eon Loss
-100
-400 -300 -200 -100 0 100 200 300 400
time (ns)
210
180
150
120
90
(A)
CE
I
60
CE
30
0
-30
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
140
120
100
Q
RR
t
RR
80
60
40
(A)
F
I
20
0
-20
-40
Pe a k I
RR
10%
Pe a k
IRR
-60
-200 0 200 400
Vce (V)
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
900
800
700
ICE
600
500
400
VCE
300
200
100
0
-100
-5 0 5 10 15
900
800
700
600
500
400
Ice (A)
300
200
100
0
-100
time (ns)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 27, 20149
time (µs)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
Page 10
Case Outline and Dimensions — Super-247
IRGPS4067DPbF
Super-247 (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
Note: "P" in assembly line position
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
ASSEMBLY LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL RECTIFIER
LOGO
ASSEMBLY LOT CODE
indicates "Lead-Free"
IRFPS37N50A
17
TOP
719C
89
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
10
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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