Datasheet IRGPH40F Datasheet (International Rectifier)

PD - 9.764

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IRGPH40F

Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

C

V

= 1200V

CES

10kHz) See Fig. 1 for Current vs. Frequency curve

G

V

E

@VGE = 15V, IC = 17A

CE(sat)

≤ 3.3V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 29
IC @ TC = 100°C Continuous Collector Current 17 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

T

STG

Collector-to-Emitter Voltage 1200 V

Pulsed Collector Current 58
Clamped Inductive Load Current 58
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 15 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 0.77
Case-to-Sink, flat, greased surface — 0.24 — °C/W
Junction-to-Ambient, typical socket mount — — 40

Revision 0

C-273

IRGPH40F

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 1.3 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.5 3.3 IC = 17A VGE = 15V

— 3.2 — V IC = 29A See Fig. 2, 5
— 3.0 — IC = 17A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 5.0 11 — S VCE = 100V, IC = 17A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V

— — 1000 VGE = 0V, VCE = 1200V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 45 67 IC = 17A
Gate - Emitter Charge (turn-on) — 11 16 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 17 26 VGE = 15V
Turn-On Delay Time — 33 — TJ = 25°C
Rise Time — 17 — ns IC = 17A, VCC = 960V
Turn-Off Delay Time — 250 490 VGE = 15V, RG = 10Ω
Fall Time — 210 390 Energy losses include "tail"
Turn-On Switching Loss — 1.0 —
Turn-Off Switching Loss — 3.0 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 4.0 7.5
Turn-On Delay Time — 32 — TJ = 150°C,
Rise Time — 20 — ns IC = 17A, VCC = 960V
Turn-Off Delay Time — 480 — VGE = 15V, RG = 10Ω
Fall Time — 450 — Energy losses include "tail"
Total Switching Loss — 8.3 — mJ See Fig. 10, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1200 — VGE = 0V
Output Capacitance — 75 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 15 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 10Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-274

Pulse width 5.0µs,

single shot.

IRGPH40F

LOAD CURRENT (A)

f, Frequency (kHz)

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltag e (V)

C

I , Collector-to-Emitter Current (A)

,

GE

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40

30

Sq uare wave:

20

10

0

0.1 1 10 100

60% of ra ted
vo ltage

Ideal d iode s

For both:

Duty cycle: 50%
T = 125°C

J

T = 90°C

sin k
Gate drive as specified
Po w er D issip ation = 35W

Tria ngular wave:

Clamp voltage:
80 % of rated

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

100

of fundamental; for triangular wave, I=IPK)

RMS

1000

10

1

1 10

V

Fig. 2 - Typical Output Characteristics

T = 25°C

J

T = 150°C

J

V = 15V

G E

20µs P UL SE WIDTH

itt

C-275

100

T = 150°C

J

10

T = 25°C

J

1

0.1

V = 100 V

CC

0.01
5 10 15 2 0

V

Gate-to-Em itter Voltage (V)

5µs PU LSE WIDTH

Fig. 3 - Typical Transfer Characteristics

IRGPH40F

Maximum DC Collector Current (A)

, Case Temperature (°C)

C

, Case Tem perature (°C)

C

CE

V , C ollector-to-E mitter Vo ltage (V )

t , Rectangular Pulse Duration (sec)

1

thJC

Thermal Response (Z )

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30

20

10

0

25 50 75 100 125 150

V = 15V

GE

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

1

5.0

V = 15V

G E

8 0µ s PULSE WIDTH

4.0

3.0

2.0

-60 -4 0 -20 0 20 4 0 6 0 8 0 100 120 1 4 0 1 6 0

I = 3 4A

C

I = 1 7A

C

I = 8.5A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

D = 0.50

0.2 0

0.1

0.1 0

0.05

0.0 2

0.0 1

0.01

0.0 0 001 0.0001 0.001 0.01 0.1 1 10

P

DM

SIN GLE PUL SE
(THERMAL RESPONS E )

Note s:

1. Duty facto r D = t / t

2. Peak T = P x Z + T

J

DM

2

1

thJC

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-276

t

1

t

2

C

IRGPH40F

CE

C, Capacitance (pF)

, Collector-to-Em

er Voltage (V)

GE

V , Gate-to-E mitte r Voltage (V)

, Total Gate Charge (nC)

g

, Case Temperature (°C)

Total S witching Losses (m J)

Total Switching Losses (mJ)

W

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24 0 0

20 0 0

16 0 0

12 0 0

800

400

0

1 10 100

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

4.8

V = 9 60 V

CC

V = 15V

G E

T = 25°C

C

I = 17A

C

4.6

20

V = 400V

CE

I = 17A

C

16

12

8

4

0

0 10 20 30 40 50

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

R = 10
V = 1 5V
V = 960V

10

G
G E
CC

Ω

I = 34A

C

I = 17A

C

4.4

4.2

4.0

0 10 20 30 40 50 60

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resistance ( )

G

Resistance

I = 8.5 A

C

1

0.1

-6 0 -40 -20 0 20 40 60 8 0 10 0 120 140 16 0

Ω

T

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

C-277

IRGPH40F

Total Switching Losses (m J)

, Collecto r-to -Emitter Current (A)

C

CE

,

I , Collec tor-to-E m itter Curren t (A)

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25

R = 10
T = 1 50°C
V = 960V

20

V = 15V

15

10

5

0

0 10 20 30 40

G
C
CC
G E

Ω

I

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

G E

GE

T = 125°C

J

100

10

1

0.1

S AFE O PERATING A RE A

1 10 100 1000 10000

V

C ollec tor-to-E m itt er V oltage (V )

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix G: Section D - page D-9

Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-278