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Preliminary Data Sheet PD - 9.1115
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IRGPH30MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
Short Circuit Rated
Fast CoPack IGBT
DIODE
Features
• Short circuit rated -10µs @125°C, V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz)
GE
= 15V
G
C
V
= 1200V
CES
V
CE(sat)
≤ 3.5V
@VGE = 15V, IC = 9.0A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 15
IC @ TC = 100°C Continuous Collector Current 9.0
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 6.0
I
FM
t
sc
V
GE
PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Voltage 1200 V
Pulsed Collector Current 30 A
Clamped Inductive Load Current 30
Diode Maximum Forward Current 30
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight — 6 (0.21) — g (oz)
Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 1.2
Junction-to-Case - Diode — — 2.5 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40
Revision 2
C-477
Page 2
IRGPH30MD2
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Notes:
Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC
Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — — — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 3.1 3.5 IC = 9.0A VGE = 15V
— 4.9 — V IC = 15A
— 3.6 — IC = 9.0A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 2.5 — — S VCE = 100V, IC = 9.0A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V
— — 2500 VGE = 0V, VCE = 1200V, TJ = 150°C
Diode Forward Voltage Drop — 2.7 3.0 V IC = 6.0A
— 2.4 2.7 IC = 6.0A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 25 30 IC = 9.0A
Gate - Emitter Charge (turn-on) — — 6.0 nC VCC = 960V
Gate - Collector Charge (turn-on) — — 15
Turn-On Delay Time — 2.3 — TJ = 25°C
Rise Time — 10 — ns IC = 9.0A, VCC = 960V
Turn-Off Delay Time — 200 450 VGE = 15V, RG = 23Ω
Fall Time — 210 390 Energy losses include "tail" and
Turn-On Switching Loss — — — diode reverse recovery.
Turn-Off Switching Loss — — — mJ
Total Switching Loss — 4.0 7.0
Short Circuit Withstand Time 10 — — µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 23Ω, V
Turn-On Delay Time — 33 — TJ = 150°C,
Rise Time — 20 — ns IC = 9.0A, VCC = 960V
Turn-Off Delay Time — 480 — VGE = 15V, RG = 23Ω
Fall Time — 450 — Energy losses include "tail" and
Total Switching Loss — 8.0 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 670 — VGE = 0V
Output Capacitance — 50 — pF VCC = 30V
Reverse Transfer Capacitance — 10 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 53 80 ns TJ = 25°C
— 87 130 TJ = 125°C IF = 6.0A
Diode Peak Reverse Recovery Current — 4.4 8.0 A TJ = 25°C
— 5.0 9.0 TJ = 125°C VR = 200V
Diode Reverse Recovery Charge — 116 320 nC TJ = 25°C
— 233 585 TJ = 125°C di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C
During t
b
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
— 100 — TJ = 125°C
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 23Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-478
< 1000V
CPK
Pulse width 5.0µs,
single shot.
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