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PD - 9.767A
IRGPF50F
Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
C
V
= 900V
CES
10kHz) See Fig. 1 for Current vs. Frequency curve
G
V
E
@VGE = 15V, IC = 28A
CE(sat)
≤ 2.7V
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 51
IC @ TC = 100°C Continuous Collector Current 28 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Voltage 900 V
Pulsed Collector Current 100
Clamped Inductive Load Current 100
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 20 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight ------ 6 (0.21) ------ g (oz)
Junction-to-Case ------ ------ 0.64
Case-to-Sink, flat, greased surface ------ 0.24 ------ °C/W
Junction-to-Ambient, typical socket mount ------ ------ 40
Revision 0
C-267
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IRGPF50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Collector-to-Emitter Breakdown Voltage 900 ---- ---- V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 ---- ---- V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.74 ---- V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 2.1 2.7 IC = 28A VGE = 15V
---- 2.7 ---- V IC = 51A See Fig. 2, 5
---- 2.4 ---- IC = 28A, TJ = 150°C
Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -9.7 ---- mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 12 18 ---- S VCE = 100V, IC = 28A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 900V
---- ---- 2000 VGE = 0V, VCE = 900V, TJ = 150°C
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Total Gate Charge (turn-on) ---- 81 120 IC = 28A
Gate - Emitter Charge (turn-on) ---- 16 24 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) ---- 29 44 VGE = 15V
Turn-On Delay Time ---- 32 ---- TJ = 25°C
Rise Time ---- 22 ---- ns IC = 28A, VCC = 720V
Turn-Off Delay Time ---- 200 280 VGE = 15V, RG = 5.0Ω
Fall Time ---- 130 180 Energy losses include "tail"
Turn-On Switching Loss ---- 1.1 ---Turn-Off Switching Loss ---- 1.8 ---- mJ See Fig. 9, 10, 11, 14
Total Switching Loss ---- 2.9 4.1
Turn-On Delay Time ---- 32 ---- TJ = 150°C,
Rise Time ---- 20 ---- ns IC = 28A, VCC = 720V
Turn-Off Delay Time ---- 480 ---- VGE = 15V, RG = 5.0Ω
Fall Time ---- 450 ---- Energy losses include "tail"
Total Switching Loss ---- 5.7 ---- mJ See Fig. 10, 14
Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Input Capacitance ---- 2300 ---- VGE = 0V
Output Capacitance ---- 180 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 27 ---- ƒ = 1.0MHz
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 5.0Ω, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-268
Pulse width 5.0µs,
single shot.
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IRGPF50F
LOAD CURRENT (A)
f, Frequency (kHz)
CE
C
I , Collector-to-Emitter Current (A)
, Collector-to-Em
er Voltag e (V)
C
I , Collector-to-Emitter Current (A)
,
GE
60
40
Squ a re w a ve:
60% of rate d
voltage
20
Idea l diodes
0
0.1 1 10 100
For both:
Duty cyc le: 50%
T = 1 2 5 °C
J
T = 90°C
sink
Gate d rive as specifie d
Power Dissipa tion = 4 0W
Triangula r w a ve:
Clamp volta g e:
80 % of ra ted
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
1000
of fundamental; for triangular wave, I=IPK)
RMS
1000
T = 25°C
100
10
1
1 10
V
J
T = 150°C
J
V = 15V
G E
20µs P UL SE WIDTH
itt
Fig. 2 - Typical Output Characteristics
100
T = 1 50 °C
J
T = 25°C
J
10
V = 100V
CC
1
5 10 15 20
V
Gate-to-Em itter Voltage (V)
5µs PULSE W IDTH
Fig. 3 - Typical Transfer Characteristics
C-269
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IRGPF50F
Maximum D C Collector Current (A)
, Case Temperature (°C)
C
, Case Temperature (°C)
C
CE
V , Collector-to-Emitter Voltage (V)
t , Rectangular Pulse Duration (sec)
1
thJC
Thermal Response (Z )
60
50
40
30
20
10
0
25 50 75 100 125 150
V = 15V
G E
T
Fig. 4 - Maximum Collector Current vs.
Case Temperature
1
4.0
V = 15V
G E
80 µs P ULSE WIDTH
3.5
3.0
2.5
2.0
1.5
1.0
-6 0 -40 -20 0 20 40 60 80 1 0 0 1 2 0 140 160
I = 56A
C
I = 28A
C
I = 14A
C
T
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
D = 0.5 0
0.20
0.1
0.1 0
0.05
0.02
0.0 1
0.01
0.0 0 001 0.0 0 01 0.001 0 .01 0.1 1 10
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
SIN GLE PULSE
(THERM AL RESPONSE)
Note s:
1. Duty facto r D = t / t
2. Peak T = P x Z + T
DM
J
P
DM
t
1
t
2
2
1
th JC
C
C-270
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IRGPF50F
CE
C, Capacitance (pF)
, Collector-to-Em
er Voltage (V)
GE
V , Gate-to-Em itter Voltage (V)
, Total Gate Charge (nC)
g
To tal Switching Losse s (mJ)
W
, Case Temperature (°C)
Total Switching Losses (m J)
50 0 0
40 0 0
30 0 0
20 0 0
10 0 0
0
1 10 100
V
V = 0V, f = 1MHz
GE
C = C + C , C SHORTED
ies ge gc ce
C = C
res gc
C = C + C
oes ce gc
C
ies
C
oes
C
res
itt
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
4.4
V = 720V
CC
V = 15V
G E
4.2
T = 25°C
C
I = 28A
C
4.0
3.8
3.6
3.4
20
V = 400V
CE
I = 28A
C
16
12
8
4
0
0 20 40 60 80 1 00
Q
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
R = 5
V = 15V
V = 720V
10
G
G E
CC
Ω
I = 56A
C
I = 28A
C
I = 14A
C
3.2
3.0
2.8
2.6
0 1 0 20 30 40 50 60
R , Ga te R esistance ( )
G
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
C-271
1
0.1
-60 -40 -2 0 0 20 40 60 80 100 120 140 16 0
T
C
Fig. 10 - Typical Switching Losses vs.
Case Temperature
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IRGPF50F
Total Switching Losses (mJ)
, Collector-to-Emitter Current (A)
C
CE
,
I , C ollec tor-to-E mitter Curre nt (A)
16
R = 5
T = 150°C
V = 720V
V = 15V
12
8
4
0
10 20 30 40 50 60
G
C
CC
G E
Ω
I
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
V = 20V
G E
GE
T = 125°C
J
100
S AFE O PERA TING A RE A
10
1
0.1
1 10 100 1000
V
C ollector-to-E m itt er V oltage (V )
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix F: Section D - page D-8
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13
C-272
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