Datasheet IRGPF40F Datasheet (International Rectifier)

PD - 9.770A

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IRGPF40F

Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

C

V

= 900V

CES

10kHz) See Fig. 1 for Current vs. Frequency
curve

G

E

V

CE(sat)

≤ 3.3V

@VGE = 15V, IC = 17A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 17 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

T

STG

Collector-to-Emitter Voltage 900 V

Pulsed Collector Current 62
Clamped Inductive Load Current 62
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 15 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 0.77
Case-to-Sink, flat, greased surface — 0.24 — °C/W
Junction-to-Ambient, typical socket mount — — 40

Revision 0

C-261

IRGPF40F

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 900 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.80 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.5 3.3 IC = 17A VGE = 15V

— 3.2 — V IC = 31A See Fig. 2, 5
— 2.9 — IC = 17A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 5.2 13 — S VCE = 100V, IC = 17A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 900V

— — 1000 VGE = 0V, VCE = 900V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 45 68 IC = 17A
Gate - Emitter Charge (turn-on) — 8.7 13 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 15 23 VGE = 15V
Turn-On Delay Time — 28 — TJ = 25°C
Rise Time — 12 — ns IC = 17A, VCC = 720V
Turn-Off Delay Time — 170 320 VGE = 15V, RG = 10Ω
Fall Time — 110 300 Energy losses include "tail"
Turn-On Switching Loss — 0.52 —
Turn-Off Switching Loss — 1.05 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 1.57 3.1
Turn-On Delay Time — 27 — TJ = 150°C,
Rise Time — 14 — ns IC = 17A, VCC = 720V
Turn-Off Delay Time — 250 — VGE = 15V, RG = 10Ω
Fall Time — 240 — Energy losses include "tail"
Total Switching Loss — 3.0 — mJ See Fig. 10, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1200 — VGE = 0V
Output Capacitance — 91 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 15 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 10Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-262

Pulse width 5.0µs,

single shot.

IRGPF40F

LOAD CURRENT (A)

f, Frequency (kHz)

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltag e (V)

C

I , Collector-to-Emitter Current (A)

,

GE

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50

40

30

Squ a re w a ve:

60% of rate d

20

10

0

0.1 1 10 100

voltage

Idea l diodes

For both:

Duty cycle: 50%
T = 1 2 5 °C

J

T = 90°C

sink

Gate drive as specifie d

Power Dissipation = 35W

Triangula r w a ve:

Clamp volta g e:
80 % of ra ted

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

1000

of fundamental; for triangular wave, I=IPK)

RMS

1000

100

10

1

1 10

V

Fig. 2 - Typical Output Characteristics

T = 25°C

J

T = 150°C

J

V = 15V

G E

20µs P UL SE WIDTH

itt

C-263

T = 25°C

J

100

10

V = 100V

1

5 10 15 20

V

Gate-to-Em itter Voltage (V)

5µs PULSE W IDTH

CC

T = 1 50 °C

J

Fig. 3 - Typical Transfer Characteristics

IRGPF40F

Maximum DC Collector Current (A)

, Case Temperature (°C)

C

, Case Tem perature (°C)

C

CE

V , C ollector-to-Emitter Voltage (V)

t , Rectangular Pulse Duration (sec)

1

thJC

Thermal Response (Z )

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40

30

20

10

0

25 50 75 100 125 150

V = 15V

G E

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

1

5.0

V = 15V

GE

8 0µ s PULSE WIDTH

I = 3 4A

C

4.0

3.0

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 1 60

I = 17A

C

I = 8.5A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

D = 0.50

0.1

0.01

0.0 0 001 0.0001 0.0 0 1 0 .01 0.1 1 10

0.2 0

0.1 0

0.05

0.0 2

0.0 1

SIN GLE PUL SE
(THERMAL RESPONS E )

Note s:

1. Duty facto r D = t / t

2. Peak T = P x Z + T

DM

J

P

DM

2

1

thJC

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-264

t

1

t

2

C

IRGPF40F

CE

C, Capacitance (pF)

, Collector-to-Em

er Voltage (V)

GE

V , Gate-to-E mitter Voltage (V)

, Total Gate Charge ( nC)

g

Total Switching Losse s (m J)

W

, Case Tem perature (°C)

Total S witching Losses (m J)

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24 0 0

20 0 0

16 0 0

12 0 0

800

400

0

1 10 100

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.78

V = 720V

CC

V = 15V

G E

T = 25°C

C

1.74

I = 17A

C

20

V = 400V

CE

I = 17A

C

16

12

8

4

0

0 10 20 30 40 50

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

I = 34A

C

1.70

1.66

1.62

1.58

1.54
0 1 0 20 30 40 50 60

Fig. 9 - Typical Switching Losses vs. Gate

R , Ga te R esistance ( )

G

Ω

Resistance

C-265

I = 17A

C

1

I = 8.5A

C

R = 10
V = 15V
V = 720V

0.1

-6 0 -40 -20 0 20 40 60 80 10 0 120 140 160

G
GE
CC

Ω

T

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

IRGPF40F

Tota l Switching L osses (m J)

, Collecto r-to -Emitter Current (A)

C

CE

,

I , C ollec tor-to-E mitter C urren t (A)

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10

R = 10
T = 1 50°C
V = 720V

8

V = 15V

6

4

2

0

0 10 20 30 40

G
C
CC
G E

Ω

I

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

G E

GE

T = 125°C

J

100

10

1

0.1
1 10 100 1000

V

S AFE O PERATING A R E A

C ollector-to-E m itt er V oltage (V )

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix F: Section D - page D-8

Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-266