Datasheet IRGPF30F Datasheet (International Rectifier)

PD - 9.1026

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IRGPF30F

Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

C

V

= 900V

CES

10kHz) See Fig. 1 for Current vs. Frequency
curve

G

E

V

CE(sat)

≤ 3.7V

@VGE = 15V, IC = 11A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 20
IC @ TC = 100°C Continuous Collector Current 11 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Voltage 900 V

Pulsed Collector Current 40
Clamped Inductive Load Current 40
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 10 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 1.2
Case-to-Sink, flat, greased surface — 0.24 — °C/W
Junction-to-Ambient, typical socket mount — — 40

C-255

Revision 0

IRGPF30F

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 900 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.83 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.6 3.7 IC = 11A VGE = 15V

— 3.3 — V IC = 20A See Fig. 2, 5
— 2.9 — IC = 11A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 3.6 6.9 — S VCE = 100V, IC = 11A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 900V

— — 1000 VGE = 0V, VCE = 900V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 22 33 IC = 11A
Gate - Emitter Charge (turn-on) — 5.1 7.7 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 8.0 12 VGE = 15V
Turn-On Delay Time — 27 — TJ = 25°C
Rise Time — 9.7 — ns IC = 11A, VCC = 720V
Turn-Off Delay Time — 160 280 VGE = 15V, RG = 23Ω
Fall Time — 140 240 Energy losses include "tail"
Turn-On Switching Loss — 0.33 —
Turn-Off Switching Loss — 0.67 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 1.0 1.9
Turn-On Delay Time — 27 — TJ = 150°C,
Rise Time — 12 — ns IC = 11A, VCC = 720V
Turn-Off Delay Time — 260 — VGE = 15V, RG = 23Ω
Fall Time — 250 — Energy losses include "tail"
Total Switching Loss — 2.0 — mJ See Fig. 10, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 560 — VGE = 0V
Output Capacitance — 50 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.3 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 23Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-256

Pulse width 5.0µs,

single shot.

IRGPF30F

LO AD C URRENT (A )

f, F reque ncy (kH z)

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltag e (V)

C

I , Collector-to-Emitter Current (A)

,

GE

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30

20

Sq uare wav e:

60% of ra ted
vol tag e

10

Ideal diodes

0

0.1 1 10 10 0

For bo th :

Du ty c yc le: 50 %
T = 1 25 ° C

J

T = 9 0°C

sin k
Ga te d rive as spe cif ie d
Pow er D issi p atio n = 2 4W

Tri a ng u lar w ave:

Cl a m p volt a ge:
80% of rate d

Fig. 1 - Typical Load Current vs. Frequency

100

(For square wave, I=I

T = 25°C

J

of fundamental; for triangular wave, I=IPK)

RMS

100

T = 2 5°C

J

T = 1 50 °C

J

10

1

1 10

V

Fig. 2 - Typical Output Characteristics

T = 150°C

J

V = 15V

G E

20µs P UL SE WIDTH

itt

C-257

10

V = 100V

CC

1

5 10 15 20

V

Gate-to-Em itter Voltage (V)

5µs PULSE W IDTH

Fig. 3 - Typical Transfer Characteristics

IRGPF30F

Maximum D C Collector Current (A)

, Case Temperature (°C)

C

, Case Temperature (°C)

C

CE

V , Collector-to-Emitter Voltage (V)

t , Rectangular Pulse Duration (sec)

1

thJC

Thermal Response (Z )

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20

16

12

8

4

0

25 50 75 100 125 150

V = 15V

G E

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

5.0

V = 15V

G E

80 µs P ULSE WIDTH

I = 22A

C

4.0

I = 11A

3.0

2.0

-6 0 -40 -2 0 0 2 0 40 60 80 100 120 14 0 160

C

I = 5.5A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

1

D = 0.5 0

0.1

0.01

0.0 0 001 0.0001 0.0 0 1 0.01 0.1 1 10

0.20

P

0.10

0.05

0.02

0.01

S IN GLE PULS E
(THERM AL RESPONSE)

Notes:

1. Duty fac t or D = t / t

2. Peak T = P x Z + T

D M

J

DM

1 2

th JC

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-258

t

1

t

2

C

IRGPF30F

Total Switching Losses (mJ)

W

, Case Tempera ture (°C)

Total Switching Losses (m J)

CE

C, C apacita nce (pF)

, Collector-to-Em

er Voltage (V)

GE

V , Gate-to-Em itter Voltage (V)

, Total Gate Charge (nC)

g

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1000

800

600

400

200

0

1 10 10 0

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.10

V = 720V

CC

V = 15V

G E

T = 25 °C

C

1.08

I = 11A

C

20

V = 400V

CE

I = 11A

C

16

12

8

4

0

0 5 10 15 2 0 2 5

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 22
V = 15V
V = 720V

G
GE
CC

Ω

I = 2 2A

C

1.06

1.04

1.02

1.00

0.98
20 25 3 0 35 40 45 50 55

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resista nce ( )

G

Ω

Resistance

C-259

I = 1 1A

C

1

0.1

-6 0 -40 -20 0 2 0 40 60 80 1 0 0 12 0 14 0 160

T

C

I = 5.5A

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

IRGPF30F

Total Switching Losses (mJ)

, Collector-to-Emitter Current (A)

C

CE

,

I , C ollec tor-to-E mitter Curre nt (A)

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6.0

R = 2 2
T = 150°C
V = 720V

5.0

V = 15V

4.0

3.0

2.0

1.0

0.0
0 5 10 15 20 25

G
C
CC
G E

Ω

I

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

V = 20V

G E

GE

T = 125°C

J

S AFE OP ERATING A REA

10

1

0.1
1 10 100 1 0 00

V

C ollector-to-E m itt er V oltage (V )

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix F: Section D - page D-8

Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-260