Datasheet IRGPF20F Datasheet (International Rectifier)

PD - 9.1025

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IRGPF20F

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

G

C

E

Fast Speed IGBT

V

= 900V

CES

V

@VGE = 15V, IC = 5.3A

CE(sat)

≤ 4.3V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 9.0
IC @ TC = 100°C Continuous Collector Current 5.3 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 900 V

Pulsed Collector Current 18
Clamped Inductive Load Current 18
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 5.0 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 2.1
Case-to-Sink, flat, greased surface — 0.24 — °C/W
Junction-to-Ambient, typical socket mount — — 40

C-249

Revision 0

IRGPF20F

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 900 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.85 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.9 4.3 IC = 5.3A VGE = 15V

— 3.5 — V IC = 9.0A See Fig. 2, 5
— 3.5 — IC = 5.3A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 0.9 1.5 — S VCE = 100V, IC = 5.3A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 900V

— — 1000 VGE = 0V, VCE = 900V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 11 17 IC = 5.3A
Gate - Emitter Charge (turn-on) — 2.6 3.9 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 4.6 6.9 VGE = 15V
Turn-On Delay Time — 29 — TJ = 25°C
Rise Time — 12 — ns IC = 5.3A, VCC = 720V
Turn-Off Delay Time — 170 300 VGE = 15V, RG = 50Ω
Fall Time — 120 280 Energy losses include "tail"
Turn-On Switching Loss — 0.25 —
Turn-Off Switching Loss — 0.36 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 0.61 1.10
Turn-On Delay Time — 27 — TJ = 150°C,
Rise Time — 13 — ns IC = 5.3A, VCC = 720V
Turn-Off Delay Time — 270 — VGE = 15V, RG = 50Ω
Fall Time — 240 — Energy losses include "tail"
Total Switching Loss — 1.10 — mJ See Fig. 10, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 220 — VGE = 0V
Output Capacitance — 25 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 3.4 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 50Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-250

Pulse width 5.0µs,

single shot.

IRGPF20F

LOAD CURRENT (A)

f, Frequency (kHz)

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltag e (V)

C

I , Collector-to-Emitter Current (A)

, Gate-to-Em

er Voltage (V)

GE

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15

12

9

Square wave:

60 % of rated

6

3

0

0.1 1 10 100

volta ge

Id ea l d io d es

For both:

Duty c ycle : 50%
T = 125°C

J

T = 9 0 °C

sin k
Gate drive as specified
Power Diss ipa tion = 1 5W

Tria n g ular wav e :

Clamp voltage :
80% of rate d

Fig. 1 - Typical Load Current vs. Frequency

100

(For square wave, I=I

T = 25°C

J

10

T = 150°C

J

of fundamental; for triangular wave, I=IPK)

RMS

100

10

1

T = 25°C

J

T = 150°C

J

1

0.1
1 10

V

Fig. 2 - Typical Output Characteristics

V = 15V

G E

20µs P UL SE WIDTH

itt

C-251

0.1

V = 100 V

CC

0.0 1
5 10 15 20

V

5µs PUL SE WIDTH

itt

Fig. 3 - Typical Transfer Characteristics

IRGPF20F

Maximum D C Collector Current (A)

, Case Temperature (°C)

C

, Case Tem perature (°C)

C

CE

V , C ollector-to-Emitter Voltage (V)

t , Rectangular Pulse Duration (sec)

1

thJC

Thermal Response (Z )

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10

8

6

4

2

0

25 50 75 100 125 150

V = 15V

G E

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

6.0

V = 15V

GE

8 0µ s PULSE WIDTH

5.0

4.0

3.0

2.0

-60 -4 0 -20 0 20 40 60 80 100 1 2 0 140 160

I = 1 1A

C

I = 5.3A

C

I = 2.7A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

D = 0.50

1

0.1

0.01

0.0 0 001 0.0001 0.0 0 1 0.01 0.1 1 10

0.20

0.10

0.0 5

0.0 2

0.01

SIN GLE PULS E
(THERM AL RESPONSE)

Notes:

1. Duty fa c tor D = t / t

2. Peak T = P x Z + T

D M

J

1 2

th JC

P

DM

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-252

t

1

t

2

C

IRGPF20F

To tal Switching Losse s (mJ)

W

, Case Tem perature (°C)

Total Switching Losses (m J)

CE

C, Capacitance (pF)

, Collector-to-Em

er Voltage (V)

GE

V , Gate-to-E mitter Voltage (V)

, Total Gate Charge ( nC)

g

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500

400

300

200

100

0

1 10 100

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0.62

V = 720V

CC

V = 15V

G E

T = 25°C

C

0.61

I = 5.3A

C

20

V = 400V

CE

I = 5.3A

C

16

12

8

4

0

0 2 4 6 8 10 12

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 50
V = 15V
V = 720V

G
GE
CC

Ω

I = 11A

C

0.60

0.59

0.58

0.57

0.56
20 25 30 35 40 45 50 5 5

Fig. 9 - Typical Switching Losses vs. Gate

R , Ga te R esistance ( )

G

Ω

Resistance

C-253

I = 5.3A

1

0.1

-6 0 -40 -2 0 0 2 0 40 60 80 100 12 0 14 0 160

T

C

C

I = 2.7A

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

IRGPF20F

Total Switching Losses (mJ)

, Collector-to-Emitter Current (A)

C

CE

,

I , Collector-to-E mitter C urrent (A )

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4.0

R = 50
T = 1 50°C
V = 720V
V = 15V

3.0

2.0

1.0

0.0
0 2 4 6 8 10 12

G
C
CC
G E

Ω

I

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

V = 20V

G E

GE

T = 125°C

J

10

S AFE O PERATING A REA

1

0.1
1 10 100 1 0 00

V

C ollector-to-E m itt er V oltage (V )

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix F: Section D - page D-8

Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-254