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PD - 9.800
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IRGPC50FD2
INSULATED GATE BIPOLAR TRANSISTOR
Fast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
V
= 600V
CES
V
CE(sat)
≤ 1.7V
@VGE = 15V, IC = 39A
E
n-chan ne l
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
O-247AC
T
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 39
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 25
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 280 A
Clamped Inductive Load Current 280
Diode Maximum Forward Current 280
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight — 6 (0.21) — g (oz)
Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 0.64
Junction-to-Case - Diode — — 0.83 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40
C-125
Revision 1
Page 2
IRGPC50FD2
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
/∆T
Temp. Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 1.6 1.7 IC = 39A VGE = 15V
— 2.0 — V IC = 70A See Fig. 2, 5
— 1.7 — IC = 39A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 21 24 — S VCE = 100V, IC = 39A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 6500 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A See Fig. 13
— 1.2 1.5 IC = 25A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 110 170 IC = 39A
Gate - Emitter Charge (turn-on) — 20 30 nC VCC = 400V
Gate - Collector Charge (turn-on) — 50 75 See Fig. 8
Turn-On Delay Time — 70 — TJ = 25°C
Rise Time — 110 — ns IC = 39A, VCC = 480V
Turn-Off Delay Time — 400 600 VGE = 15V, RG = 5.0Ω
Fall Time — 290 400 Energy losses include "tail" and
Turn-On Switching Loss — 2.5 — diode reverse recovery.
Turn-Off Switching Loss — 6.0 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 8.5 13
Turn-On Delay Time — 68 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 100 — ns IC = 39A, VCC = 480V
Turn-Off Delay Time — 760 — VGE = 15V, RG = 5.0Ω
Fall Time — 520 — Energy losses include "tail" and
Total Switching Loss — 14 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3000 — VGE = 0V
Output Capacitance — 340 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 40 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 75 ns TJ = 25°C See Fig.
— 105 160 TJ = 125°C 14 IF = 25A
Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C See Fig.
— 8.0 15 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C See Fig.
— 420 1200 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C See Fig.
During t
b
— 160 — TJ = 125°C 17
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 5.0Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-126
Page 3
IRGPC50FD2
A
CE
C
I , Collector-to-Emitter Current (A)
, Collector-to-Em
er Voltage (V)
C
I , Collector-to-Emitter Current (A )
,
GE
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30
D u ty c ycle : 5 0 %
T = 12 5° C
J
25
20
T = 90 °C
sink
G a te d r ive a s sp e cifie d
Tu rn -o n los s es in clud e
effe cts o f re v erse re c ove ry
P o w e r D is s ip a tio n = 4 0W
15
10
Load Current (A)
5
0
0.1 1 10 100
60% of rat e d
v olta ge
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
1000
100
(Load Current = I
T = 25°C
J
T = 150°C
J
of fundamental)
RMS
1000
100
T = 25°C
J
T = 150°C
J
10
1
0.1 1 1 0
V
Fig. 2 - Typical Output Characteristics
V = 15V
G E
20µs P ULSE WIDTH
itt
C-127
10
V = 1 00V
CC
1
5 10 1 5 20
V
Gate-to-Emitter Voltage (V)
5µs PUL SE W IDTH
Fig. 3 - Typical Transfer Characteristics
Page 4
IRGPC50FD2
Maximum DC Collector Current (A)
, Case Temperature (°C)
C
, Case Temperature (°C)
C
CE
V , Collector-to-Emitter Voltage (V)
t , Rectangula r Pulse Duratio n (sec)
1
thJC
Therm al R esponse (Z )
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70
60
50
40
30
20
10
0
25 50 75 1 0 0 1 2 5 15 0
V = 15V
G E
T
Fig. 4 - Maximum Collector Current vs.
Case Temperature
1
3.0
V = 15V
G E
80 µs PU L SE W ID TH
I = 78A
2.5
2.0
1.5
1.0
-6 0 -4 0 -2 0 0 20 40 60 80 1 00 120 140 160
C
I = 39A
C
I = 20A
C
T
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
D = 0 .50
0.1
0.0 1
0.00001 0.0001 0.00 1 0.01 0.1 1 10
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0.2 0
0.1 0
0.0 5
0.0 2
0.0 1
S IN G LE P U L SE
(TH E R M AL R E S PO NSE)
C-128
P
DM
t
1
t
2
Notes :
1. Duty facto r D = t / t
2. Peak T = P x Z + T
J
DM
1 2
thJC
C
Page 5
IRGPC50FD2
A
CE
C, Capacitance (pF)
, Collector-to-Em
er Voltage (V)
GE
V , Gate-to-E m itter V oltage (V)
, Total Gate Charge ( nC)
g
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7000
6000
5000
4000
3000
2000
1000
0
1 10 100
V = 0V, f = 1MHz
GE
C = C + C , C SHO RTED
ies ge gc ce
C = C
res gc
C = C + C
oes ce gc
C
ies
C
oes
C
res
V
itt
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
9.2
V = 480V
CC
V = 15V
GE
T = 25°C
C
I = 39A
9.0
C
20
V = 48 0V
CE
I = 39A
C
16
12
8
4
0
0 30 60 90 120
Q
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
R = 5.0
V = 15V
V = 480V
G
GE
CC
Ω
I = 78A
C
8.8
8.6
8.4
Total Switching Losses (mJ)
8.2
0 10 20 30 40 50 60
Fig. 9 - Typical Switching Losses vs. Gate
R , Gate Resistance (Ω)
G
Resistance
A
C-129
I = 39A
C
10
I = 20A
C
Total Switching Losses (mJ)
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Case Temperature (°C)
C
Fig. 10 - Typical Switching Losses vs.
Case Temperature
Page 6
IRGPC50FD2
A
C
CE
,
I , Collector-to-E mitte r C urrent (A)
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40
R = 5
T = 150°C
V = 480V
V = 15V
30
20
10
G
C
CC
GE
Ω
Total Switching Losses (mJ)
0
0 20 40 60 80
I , Collector-to-Emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1000
V = 20V
G E
GE
T = 12 5°C
J
100
10
1
1 10 100 1000
V
S AFE OPERA TING A RE A
C olle ctor-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
F
T = 150°C
J
T = 125°C
J
10
T = 25°C
J
Instantaneous Forward Current - I (A)
1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - V (V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-130
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IRGPC50FD2
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140
V = 200V
R
T = 125°C
J
T = 25°C
120
100
I = 50A
80
rr
t - (ns)
F
I = 25A
F
I = 10A
F
60
40
20
100 1000
di /dt - (A/µs)
f
J
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1500
V = 200V
R
T = 125°C
J
T = 25°C
J
1200
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 50A
F
I = 25A
F
10
IRRM
I - (A)
1
100 1000
di /dt - (A/µs)
f
I = 10A
F
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
V = 200V
R
T = 125°C
J
T = 25°C
J
900
RR
Q - (nC)
600
I = 25A
300
0
100 1000
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di
I = 50A
F
F
I = 10A
F
di /dt - (A/µs)
f
1000
di(rec)M/dt - (A/µs)
100
100 1000
I = 10A
F
I = 50A
F
di /dt - (A/µs)
f
/dt vs. dif/dt
(rec)M
I = 25A
F
C-131
Page 8
IRGPC50FD2
t
2
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90% Vge
+Vge
Same type
device as
D.U.T.
80%
of Vce
430µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, E
off(diode)
, trr, Qrr, Irr, t
d(on)
, tr, t
d(off)
, t
f
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
GATE VOLTAGE D.U.T.
Vcc
10% +Vg
10% Ic
td(on)
Vce
tr
t1
90% Ic
5% Vce
+Vg
DUT VOLTAGE
AND CURRENT
Ipk
Ic
t2
Vce ie dt
Eon =
∫
t1
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, t
d(on)
, t
r
Vce
10% Vce
Ic
td(off)
t1
E
Ic
tx
10% Vcc
Vpk
DIODE REVERSE
RECOVERY ENERGY
Irr
, t
off
d(off)
trr
t3
90% Ic
Ic
5% Ic
tf
t1+5µS
Vce ic dt
Eoff =
∫
t1
, t
f
trr
Qrr =
id dt
∫
tx
10% Irr
Vcc
DIODE RECOVERY
WAVEFORMS
t4
Erec =
Vd id dt
∫
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig.
18a, Defining E
, trr, Qrr, I
rec
rr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
C-132
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