Datasheet IRGPC50F Datasheet (International Rectifier)

PD - 9.695A

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IRGPC50F

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency
curve

G

C

E

Fast Speed IGBT

V

= 600V

CES

V

@VGE = 15V, IC = 39A

CE(sat)

≤ 1.7V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 39 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 280
Clamped Inductive Load Current 280
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 20 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 0.64
Case-to-Sink, flat, greased surface — 0.24 — °C/W
Junction-to-Ambient, typical socket mount — — 40

Revision 0

C-87

IRGPC50F

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temp. Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.4 1.7 IC = 39A VGE = 15V

— 2.0 — V IC = 70A See Fig. 2, 5
— 1.7 — IC = 39A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemp. Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 21 30 — S VCE = 100V, IC = 39A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 2000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 84 100 IC = 39A
Gate - Emitter Charge (turn-on) — 20 25 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 51 67 VGE = 15V
Turn-On Delay Time — 24 — TJ = 25°C
Rise Time — 50 — ns IC = 39A, VCC = 480V
Turn-Off Delay Time — 270 540 VGE = 15V, RG = 5.0Ω
Fall Time — 210 360 Energy losses include "tail"
Turn-On Switching Loss — 1.7 —
Turn-Off Switching Loss — 4.3 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 6.0 9.0
Turn-On Delay Time — 25 — TJ = 150°C,
Rise Time — 49 — ns IC = 39A, VCC = 480V
Turn-Off Delay Time — 440 — VGE = 15V, RG = 5.0Ω
Fall Time — 410 — Energy losses include "tail"
Total Switching Loss — 9.0 — mJ See Fig. 10, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3000 — VGE = 0V
Output Capacitance — 340 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 40 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 5.0Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-88

Pulse width 5.0µs,

single shot.

IRGPC50F

LOAD CURRENT (A)

f, Frequency (kHz)

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltage (V)

C

I , Collector-to-Emitter Current (A)

,

GE

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80

60

Squa re w ave:

40

20

0

0.1 1 10 100

60 % of rated
voltage

Ideal diodes

Fo r both:

Duty cycle: 5 0 %
T = 125 ° C

J

T = 90°C

sin k
Gate d riv e as specifie d
Po we r D issip ation = 4 0 W

Tr iangular wave :

Clamp voltage:
80 % of rated

Fig. 1 - Typical Load Current vs. Frequency

1000

(For square wave, I=I

T = 25°C

J

of fundamental; for triangular wave, I=IPK)

RMS

1000

T = 25°C

J

T = 150°C

J

100

10

1

0.1 1 1 0

V

Fig. 2 - Typical Output Characteristics

T = 150°C

J

V = 15V

G E

20µs PU LSE WIDTH

itt

C-89

100

10

V = 1 00 V

CC

1

5 10 15 20

V

Gate-to-Em itter Voltage (V)

5µs PUL SE WIDTH

Fig. 3 - Typical Transfer Characteristics

Revision 0

IRGPC50F

, Case Temperature (°C)

C

CE

V , Collector-to-Emitter Voltage (V)

Maximum DC Collector Current (A)

, Case Tempera ture (°C)

C

t , Recta ngular Pulse Duration (sec)

1

thJC

Thermal Response (Z )

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70

60

50

40

30

20

10

0

25 50 75 100 125 150

V = 15V

G E

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

1

3.0

V = 1 5V

G E

80 µs PUL SE WIDTH

I = 78A

2.5

2.0

1.5

1.0

-6 0 -40 -20 0 20 40 60 80 100 120 140 16 0

C

I = 39A

C

I = 20A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

D = 0.50

0.1

0.0 1

0.00001 0.000 1 0.001 0 .01 0.1 1 10

0.2 0

0.1 0

0.0 5

0.0 2

0.0 1

S ING LE P ULS E
(TH ERM AL RE S PO NS E)

Note s :

1. Duty fa ctor D = t / t

2. Peak T = P x Z + T

DM

J

1 2

thJC

P

DM

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-90

t

1

t

2

C

IRGPC50F

CE

C, Capacitance (pF)

, Collector-to-Em

er Voltag e (V)

Total Switching Losses (mJ)

W

, Case Tempera ture (°C)

Total S witching Losses (m J)

GE

V , Gate-to-Emitter Voltage (V)

, Total Gate Charge (nC)

g

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7000

6000

5000

4000

3000

2000

1000

0

1 10 100

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

V

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

7.5

V = 480V

CC

V = 15V

G E

T = 25 °C

C

I = 39A

C

7.0

20

V = 480V

CE

I = 39A

C

16

12

8

4

0

0 30 60 90 120

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

R = 2.0

G

V = 15V

GE

V = 480V

CC

Ω

I = 7 8A

C

6.5

6.0

5.5
0 10 20 30 40 50

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resistance ( )

G

Resistance

I = 39A

10

1

-6 0 -40 -20 0 20 4 0 60 80 100 120 1 4 0 160

Ω

T

C

C

I = 20A

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

C-91

IRGPC50F

C

CE

,

I , Collector-to-E mitter C urrent (A )

Total Switching Losses (mJ)

, Collector-to-Em

er Current (A)

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25

R = 2.0

G

T = 150°C

C

V = 480V

CC

20

V = 1 5V

GE

15

10

5

0

0 20 40 60 80

Ω

I

C

itt

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

G E

GE

T = 125°C

J

100

10

1

1 10 100 10 0 0

V

S AFE O PERA TING A RE A

C ollector-t o-E m itter V oltage (V )

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix C: Section D- page D-5

Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-92