Datasheet IRGPC30S Datasheet (International Rectifier)

PD - 9.1146

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IRGPC30S

Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for line frequency operation (to 400Hz)

C

V

= 600V

CES

See Fig. 1 for Current vs. Frequency curve

G

V

E

@VGE = 15V, IC = 18A

CE(sat)

≤ 2.2V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 34
IC @ TC = 100°C Continuous Collector Current 18 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 68
Clamped Inductive Load Current 68
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 10 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 1.2
Case-to-Sink, flat, greased surface — 0.24 — °C/W
Junction-to-Ambient, typical socket mount — — 40

Revision 0

C-21

IRGPC30S

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.7 2.2 IC = 18A VGE = 15V

— 2.4 — V IC = 34A See Fig. 2, 5
— 1.9 — IC = 18A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 6.0 11 — S VCE = 100V, IC = 18A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 28 40 IC = 18A
Gate - Emitter Charge (turn-on) — 5.0 8.0 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 12 20 VGE = 15V
Turn-On Delay Time — 26 — TJ = 25°C
Rise Time — 32 — ns IC = 18A, VCC = 480V
Turn-Off Delay Time — 820 1100 VGE = 15V, RG = 23Ω
Fall Time — 720 1200 Energy losses include "tail"
Turn-On Switching Loss — 0.51 —
Turn-Off Switching Loss — 6.6 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 7.1 10
Turn-On Delay Time — 26 — TJ = 150°C,
Rise Time — 35 — ns IC = 18A, VCC = 480V
Turn-Off Delay Time — 1200 — VGE = 15V, RG = 23Ω
Fall Time — 1500 — Energy losses include "tail"
Total Switching Loss — 12 — mJ See Fig. 10, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 700 — VGE = 0V
Output Capacitance — 70 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 9.2 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 23Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-22

Pulse width 5.0µs,

single shot.

IRGPC30S

A

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltage (V)

C

I , Collector-to-Emitter C urrent (A)

, Gate-to-Em

er Voltage (V)

GE

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40

30

20

Square w ave:

60% of rated
voltag e

For both:

Duty c ycle : 50 %
T = 125°C

J

T = 90°C

sin k
Gate drive as sp ecifie d
Pow er Dis sipa tion = 24W

Triangular w ave :

Clamp voltage:
80% of ra ted

Load Current (A)

10

Ide a l d io des

0

0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

100

of fundamental; for triangular wave, I=IPK)

RMS

1000

10

1

0.1 1 10

V

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

T = 25°C

J

T = 150°C

J

V = 15V

G E

20µs PULS E WIDTH

itt

C-23

100

T = 150°C

J

T = 25°C

10

1

5 10 1 5 2 0

J

V = 100 V

CC

5µs PULS E W IDTH

V

itt

IRGPC30S

Maximum DC Collector C urrent (A)

, Case Temperature (°C)

C

, Case Tem perature (°C)

C

CE

V , Collecto r-to-E m itter V oltage (V )

t , Rectangular P ulse D ur a tion (sec)

1

thJ C

The rm al R esponse (Z )

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40

30

20

10

0

25 50 75 100 125 150

V = 15V

GE

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

3.0

V = 15V

GE

8 0µ s PU LS E WIDTH

2.5

2.0

1.5

1.0

-60 -40 -20 0 20 4 0 60 80 100 1 20 140 160

I = 36A

C

I = 18A

C

I = 9.0A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

1

D = 0.5 0

0.1

0.01

0.00 0 01 0.0001 0.001 0.01 0.1 1 10

0.2 0

P

0.1 0

0.0 5

0.0 2

0.0 1

S IN G L E P UL SE
(T HE R M AL R E SP O N SE )

Notes:

1. D u ty fa c tor D = t / t

2. Pea k T = P x Z + T

DM

J

D M

1 2

thJC

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-24

t

1

t

2

C

IRGPC30S

Total Switching Losses (m J)

W

, Case Tem perature (°C)

Total Switching Losses (m J)

GE

V , G ate-to-E m itter V oltage (V )

, Total Gate Charge (nC)

g

CE

C, Capacitance (pF)

, Collector-to-Em

er Voltage (V)

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14 00

12 00

10 00

800

600

400

200

0

1 10 100

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

7.4

V = 480V

CC

V = 15V

G E

7.3

T = 25 °C

C

I = 18A

C

7.2

20

V = 400V

CE

I = 18A

C

16

12

8

4

0

0 6 12 18 2 4 3 0

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

R = 23
V = 15V
V = 480V

G
GE
CC

Ω

I = 36A

C

7.1

7.0

6.9

6.8

6.7
0 10 20 30 40 5 0 6 0

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resistance ( )

G

Resistance

I = 18A

10

1

-6 0 -40 -20 0 2 0 40 6 0 8 0 100 1 2 0 140 160

Ω

T

C

C

I = 9.0A

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

C-25

IRGPC30S

Total Sw itching Losses (m J)

, Collector-to-Em

er Current (A)

A

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25

R = 23
T = 150°C
V = 480V

20

V = 15V

15

10

5

0

0 10 20 30 40

G
C
CC
G E

Ω

I

C

itt

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

GE

T = 125°C

J

100

SAFE OPERATING AREA

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 1000

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix C: Section D - page D-5

Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

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