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PD - 9.1109
IRGPC20KD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short circuit rated -10µs @125°C, V
• Switching-loss rating includes all "tail" losses
• HEXFRED
TM
soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
GE
= 15V
G
C
E
Short Circuit Rated
UltraFast CoPack IGBT
V
= 600V
CES
V
@VGE = 15V, IC = 6.0A
CE(sat)
≤ 3.5V
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
T
O-247AC
Absolute Maximum Ratings
Parameter Max. Units
V
CES
@ TC = 25°C Continuous Collector Current 10
I
C
IC @ TC = 100°C Continuous Collector Current 6.0
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Foward Current 7 .0
I
FM
t
sc
V
GE
@ TC = 25°C Maximum Power Dissipation 60 W
P
D
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 20 A
Clamped Inductive Load Current 20
Diode Maximum Forward Current 20
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ------ 6 (0.21) ------ g (oz)
Junction-to-Case - IGBT ------ ------ 2.1
Junction-to-Case - Diode ------ ------ 3.5 °C/W
Case-to-Sink, flat, greased surface ------ 0.24 -----Junction-to-Ambient, typical socket mount ----- ----- 40
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IRGPC20KD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage---- 0.37 ---- V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 2.4 3.5 IC = 6.0A VGE = 15V
---- 3.6 ---- V I
---- 2.9 ---- I
= 10A See Fig. 2, 5
C
= 6.0A, TJ = 150°C
C
Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 1.9 3.3 ---- S VCE = 100V, IC = 6.0A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 1700 V
= 0V, VCE = 600V, TJ = 150°C
GE
Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 8.0A See Fig. 13
---- 1.3 1.6 I
= 8.0A, TJ = 150°C
C
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Q
Q
ge
Q
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
g
gc
Total Gate Charge (turn-on) ---- 17 26 IC = 6.0A
Gate - Emitter Charge (turn-on) ---- 4.3 6.8 nC VCC = 400V
Gate - Collector Charge (turn-on) ---- 6.4 11 See Fig. 8
Turn-On Delay Time ---- 59 ---- TJ = 25°C
Rise Time ---- 3 8 ---- ns IC = 6.0A, VCC = 480V
Turn-Off Delay Time ---- 110 210 VGE = 15V, RG = 50Ω
Fall Time ---- 80 120 Energy losses include "tail" and
Turn-On Switching Loss ---- 0.28 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 0.15 ---- mJ See Fig. 9, 10, 11, 18
Total Switching Loss ---- 0.43 0.90
Short Circuit Withstand Time 10 ---- ---- µs VCC = 360V, TJ = 125°C
= 15V, RG = 50Ω, V
V
GE
Turn-On Delay Time ---- 52 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time ---- 3 5 ---- ns IC = 6.0A, VCC = 480V
Turn-Off Delay Time ---- 170 ---- VGE = 15V, RG = 50Ω
Fall Time ---- 170 ---- Energy losses include "tail" and
Total Switching Loss ---- 0.65 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Input Capacitance ---- 350 ---- VGE = 0V
Output Capacitance ---- 45 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 4. 7 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 37 55 n s TJ = 25°C See Fig.
---- 55 90 T
= 125°C 14 IF = 8.0A
J
Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25°C See Fig.
---- 4.5 8.0 TJ = 125°C 15 VR = 200V
Q
rr
µs di
---- A/µs T
Notes:
---- TJ = 125°C 17
Repetitive rating; V
by max. junction temperature. ( See fig. 20 )
Diode Reverse Recovery Charge ---- 65 138 nC TJ = 25°C See Fig.
=20V, pulse width limited
GE
---- 124 360 T
/dtDiode Peak Rate of Fall of Recovery ---- 240
(rec)M
= 25°C See Fig. During tb---- 210
J
V
=80%(V
CC
), VGE=20V, L=10µH,
CES
RG= 50Ω, ( See fig. 19 )
= 125°C 16 di/dt = 200A/
J
Pulse width 5.0µs,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
single shot.
CPK
< 500V
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IRGPC20KD2
0
0
0
8
6
60% of rated
4
LOAD CURRENT (A)
2
0
0.1 1 10 10
voltage
Duty cycle: 50%
T = 125°C
J
T = 90°C
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 15W
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
of fundamental)
RMS
100
T = 25°C
J
10
T = 150°C
1
C
I , Collector-to-Emitter Current (A)
0.1
0.1 1 1
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
J
10
T = 150°C
J
T = 25°C
J
C
I , Collector-to-Emitter Current (A)
1
510152
V , Gate-to-Emitter Voltage (V)
GE
V = 100 V
CC
5µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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IRGPC20KD2
0
0
10
8
6
4
2
V = 15V
GE
Maximum DC Collector Current (A)
0
25 50 75 100 125 15
T , Case Temperature (°C)
C
Fig. 4 - Maximum Collector Current vs.
Case Temperature
10
5.0
V = 15V
GE
80µs PULSE WIDTH
4.0
3.0
2.0
CE
V , Collector-to-Emitter Voltage (V)
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 16
T , Case Temperature (°C)
C
I = 12A
C
I = 6.0A
C
I = 3.0A
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
thJC
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J
DM
12
thJC
P
DM
t
1
t
C
2
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
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IRGPC20KD2
W
0
700
600
500
400
300
C, Capacitance (pF)
200
100
0
110100
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
GE
C = C + C , C SHORTED
ies ge gc ce
C = C
res gc
C = C + C
oes ce gc
C
ies
C
oes
C
res
CE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.480
V = 480V
CC
V = 15V
GE
T = 25°C
C
0.475
I = 6.0A
C
20
V = 480V
CE
I = 6.0A
C
16
12
8
4
GE
V , Gate-to-Emitter Voltage (V)
0
0 4 8 12 16 20
Q , Total Gate Charge (nC)
g
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
R = 50
V = 15V
V = 480V
G
GE
CC
Ω
0.470
0.465
0.460
To tal S witch i ng L osses (m J)
0.455
0.450
20 25 30 35 40 45 5 0 55
R , Gate Resistance ( )
G
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
I = 12A
C
1
I = 6.0A
C
I = 3.0A
C
Total Switching Losses (mJ)
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 16
T , Case Temperature (°C)
C
Fig. 10 - Typical Switching Losses vs.
Case Temperature
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IRGPC20KD2
5
0
2.0
R = 50
T = 150°C
V = 480 V
1.6
V = 15V
1.2
0.8
0.4
Total Switching Losses (mJ)
0.0
0369121
Ω
G
C
CC
GE
I , Collector-to-E mitter Cu rre nt (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
V = 20V
GE
GE
T = 125°C
J
10
1
C
I , Collector-to-Emitter Current (A)
0.1
1 10 100 100
V , Collector-to-Emit ter Vo ltage (V)
CE
SAFE OPERATING AREA
Fig. 12 - Turn-Off SOA
F
10
T = 150°C
J
T = 125°C
J
T = 25°C
J
1
Instantaneous Forward Current - I (A)
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - V (V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRGPC20KD2
100
V = 200V
R
T = 125°C
J
T = 25°C
J
80
I = 16A
F
60
rr
t - (ns)
40
I = 4.0A
F
20
0
100 1000
di /dt - (A/µs)
f
I = 8.0A
F
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
V = 200V
R
T = 125°C
J
T = 25° C
J
400
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 16A
10
IRRM
I - (A)
I = 8.0A
F
1
100 1000
F
di /dt - (A/µs)
f
I = 4.0A
F
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
V = 200V
R
T = 125°C
J
T = 25° C
J
300
I = 16A
F
RR
Q - (nC)
200
I = 8.0A
F
100
0
100 1000
di /dt - (A/µs)
f
I = 4.0A
F
1000
di(rec)M/dt - (A/µs)
100
100 1000
I = 4.0A
I = 8.0A
I = 16A
F
di /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di
F
F
f
(rec)M
/dt vs. dif/dt
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IRGPC20KD2
90% Vge
+Vge
Same type
device as
D.U.T.
80%
of Vce
430µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
I
LM
Vcc
, Eon, E
10% +Vg
10% Ic
, trr, Qrr, Irr, t
off(diode)
Vce
5% Vce
trtd(on)
t1 t2
d(on)
GATE VOLTAGE D.U.T.
+Vg
90% Ic
, tr, t
d(off)
DUT VOLTAGE
AND CURRENT
Ipk
t2
Vce ie dt
Eon =
∫
t1
Vce
10% Vce
Ic
td(off)
, t
f
t1
90% Ic
Ic
5% Ic
tf
Eoff =
∫
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
, t
d(off)
t3
, t
f
trr
Qrr =
∫
10% Irr
DIODE RECOVERY
WAVEFORMS
t4
Erec =
Vd id dt
∫
t3
t4
E
off
Ic
tx
10% Vcc
Vpk
Ic
DIODE REVERSE
RECOVERY ENERGY
Irr
t1+5µS
Vc e ic dt
trr
id dt
tx
Vcc
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
, t
Defining E
on
d(on)
, t
r
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E
, trr, Qrr, I
rec
rr
Page 9
Vg
T
)
GATE SIGNAL
DEVICE UNDER TES
CURRENT D.U.T.
VOLTAGE IN D. U.T.
CURRENT IN D1
IRGPC20KD2
t0 t1
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
L
V *
1000V
50V
6000µF
100V
Fig. 19 - Clamped Inductive Load Test
Circuit
15.90 (.626 )
15.30 (.602 )
20.30 (.800)
19.70 (.775)
14.80 (.583)
*
14.20 (.559)
2.40 (.094)
2.00 (.079)
5.45 (.215)
- B -
12
2X
2X
3
3X
3.40 (.133)
3.00 (.118)
- A -
1.40 (.05 6)
1.00 (.03 9)
0.25 (.010)
c
3.65 (.1 43)
3.55 (.1 40)
0.25 (.010)
5.50 (.21 7)
2X
- C -
4.30 (.170)
3.70 (.145)
5.50 (.2 17)
4.50 (.1 77)
M
C
M
A
D.U.T.
D
S
t2
480V
RL=
0 - 480V
4 X I
@25°C
C
Fig. 20 - Pulsed Collector Current
Test Circuit
- D -
5.30 (.2 09)
M
B
4.70 (.1 85)
2.50 (.089)
1.50 (.059)
4
0.80 (.031)
3X
0.40 (.016)
2.60 (.1 02)
2.20 (.0 87)
NOTES:
1 DIMENSIONS & TOL ERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO-24 7 AC.
LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
3 - EMIT TER
4 - COLLECTOR
*LONGER LEADE D (20mm )
VERSION AVAILABLE (TO -247A D)
TO OR DER AD D "- E " S UFFIX
TO PA RT N UM B ER
CONFORM S TO JEDE C OUT L INE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches
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