Datasheet irgpc20k Datasheet

PD - 9.1129

IRGPC20K

INSULATED GATE BIPOLAR TRANSISTOR

Short Circuit Rated

UltraFast IGBT

Features

• Short circuit rated - 10µs @ 125°C, VGE = 15V

• Switching-loss rating includes all "tail" losses

• Optimized for high operating frequency (over
5kHz) See Fig. 1 for Current vs. Frequency
curve

G

C

V

= 600V

CES

V

E

@VGE = 15V, IC = 6.0A

CE(sat)

≤ 3.5V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.

These new short circuit rated devices are especially suited for motor
control and other applications requiring short circuit withstand capability.

T

O-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

@ TC = 25°C Continuous Collector Current 10

I

C

@ TC = 100°C Continuous Collector Current 6.0 A

I

C

I

CM

I

LM

t

sc

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 60 W

@ TC = 100°C Maximum Power Dissipation 24

P

D

T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  20
Clamped Inductive Load Current  20
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy  5.0 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Junction-to-Case — — 2.1
Case-to-Sink, flat, greased surface — 0.24 — °C/W
Junction-to-Ambient, typical socket mount — — 4 0

IRGPC20K

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min . Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 6 00 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage  20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage— 0.37 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2. 4 3.5 IC = 6.0A VGE = 15V

— 3.6 — V IC = 10A See Fig. 2, 5
— 2.9 — I

= 6.0A, TJ = 150°C

C

Gate Threshold Voltage 3.0 — 5. 5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — - 11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  1.9 3.3 — S VCE = 100V, IC = 6.0A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1000 V

= 0V, VCE = 600V, TJ = 150°C

GE

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 17 26 IC = 6.0A
Gate - Emitter Charge (turn-on) — 4.3 6.8 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 6.4 11 VGE = 15V
Turn-On Delay Time — 29 — TJ = 25°C
Rise Time — 18 — ns IC = 6.0A, VCC = 480V
Turn-Off Delay Time — 58 9 0 VGE = 15V, RG = 50Ω
Fall Time — 120 200 Energy losses include "tail"
Turn-On Switching Loss — 0.11 —
Turn-Off Switching Loss — 0.13 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 0.24 0.31
Short Circuit Withstand Time 10 — — µs VCC = 400V, TJ = 125°C

= 15V, RG = 50Ω, V

V

GE

Turn-On Delay Time — 28 — TJ = 150°C,
Rise Time — 22 — ns IC = 6.0A, VCC = 480V
Turn-Off Delay Time — 200 — VGE = 15V, RG = 50Ω
Fall Time — 145 — Energy losses include "tail"
Total Switching Loss — 0.50 — mJ See Fig. 10, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 360 — VGE = 0V
Output Capacitance — 45 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 4.7 — ƒ = 1.0MHz

CPK

< 500V

Notes:

 Repetitive rating; V

=20V, pulse width

GE

limited by max. junction temperature.
( See fig. 13b )

 V

=80%(V

CC

), VGE=20V, L=10µH,

CES

RG= 50Ω, ( See fig. 13a )

 Repetitive rating; pulse width limited

by maximum juntion temperature.

 Pulse width ≤ 80µs; duty factor ≤ 0.1%.

 Pulse width 5.0µs,

single shot.

IRGPC20K

0

A

0

0

16

12

8

Square wave:

60% of rated
voltage

For both:

Duty cycle: 50%
T = 125°C

J

T = 90°C

sink
Gate drive as specified
Power Dissipation = 15W

Triangular wave:

Clamp voltage:
80% of rated

Load Current (A)

4

Ide al di od es

0

0.1 1 10 10

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

100

of fundamental; for triangular wave, I=IPK)

RMS

100

T = 25°C

J

10

T = 150°C

1

C

I , Collector-to-Emitter Current (A)

0.1

0.1 1 1

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

J

10

T = 150°C

J

T = 25°C

J

C

I , Collector-to-Emitt er Current (A)

1

510152

V , Gate-to-Emitter Voltage (V)

GE

V = 100V

CC

5µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

IRGPC20K

0

0

10

8

6

4

2

V = 15V

GE

Maximum DC Collector Current (A)

0

25 50 75 100 125 15

T , Case Temperature (°C)

C

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

5.0

V = 15V

GE

80µs PULSE WIDTH

4.0

3.0

2.0

CE

V , Collector-to-Emitter Voltage (V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 16

T , Case Temperature (°C)

C

I = 12A

C

I = 6.0A

C

I = 3.0A

C

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

thJC

D = 0.50

1

0.20

0.10

0.1

Thermal Response (Z )

0.01

0.05

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE
(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J

DM

12

thJC

P

DM

t

1

C

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRGPC20K

W

A

700

600

500

400

300

C, Capacitance (pF)

200

100

0

110100

V = 0V, f = 1MH z

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0.26

V = 480V

CC

V = 15V

GE

T = 25°C

C

0.25

I = 6.0A

C

0.24

0.23

20

V = 480V

CE

I = 6.0A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 4 8 12 16 20

Q , Total Gate Charge (nC)

g

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 50
V = 15V

V = 480V

1

G
GE
CC

Ω

I = 12A

C

I = 6.0A

C

I = 3.0A

C

0.22

Total Switching Losses (mJ)

0.21

0.20
0 102030405060

R , Gate Resistance (Ω)

G

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

0.1

Total Switching Losses (mJ)

0.01

-60 -40 -20 0 2 0 40 60 8 0 100 120 140 160

T , Case Temperature (°C)

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

IRGPC20K

*

A

0

1.4

R = 50
T = 150°C

1.2

V = 480V
V = 15V

1.0

0.8

0.6

0.4

Total Switching Losses (mJ)

0.2

0.0
02468101214

Ω

G
C
CC
GE

I , Collector-to-Emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

- A -

5.50 (.217)

2X

- C -

4.30 (.170)

3.70 (.145)

1.40 (.056)

1.00 (.039)

0.25 (.010)

3.65 (. 143)

3.55 (. 140)

0.25 (.010)

5.50 (.217)

4.50 (.177)

M

C

M

A

20.30 (.800)

19.70 (.775)

14.80 (.583)

14.20 (.559)

2.40 (.094)

2.00 (.079)
2X

5.45 (.215)
2X

15.90 (.626)

15.30 (.602)

- B -

1

23

3X

3.40 (.133)

3.00 (.118)

100

V = 20V

GE

GE

T = 125°C

J

10

1

C

I , Collector-to-Emitter Current (A)

0.1
1 10 100 100

V , Collector-to-Emitter Volta ge (V)

CE

SAFE OPERATING AREA

Fig. 12 - Turn-Off SOA

- D -

5.30 (.209)

D

M

B

4.70 (.185)

2.50 (.089)

1.50 (.059)

4

0.80 (.031)

3X

S

0.40 (.016)

2.60 (.102)

2.20 (.087)

NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOW N
MILLIMETERS (INCHES).
4 CONFO RMS TO JEDEC OUTLINE
TO-247AC.

LEAD ASSIGNMENTS
1 - GATE
2 - CO LLECTO R
3 - EMIT TER
4 - CO LLECTO R

LONGER LEADED (20mm)

*

VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E " SUFFIX
TO PART N UMBER

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)

Dimensions in Millimeters and (Inches)

IRGPC20K

480µF
960V

s

L

V *

50V

1000V



* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inducto r
will increase to obtain rated Id.

C

Fig. 13a - Clamped Inductive

Load Test Circuit

L

Driver*

50V

1000V





D.U.T.

V

480V

RL =

0 -

480V



4

I

@25°C

C

X

Fig. 13b - Pulsed Collector

Current Test Circuit

I

C

D.U .T.

C



Fig. 14a - Switching

Loss Test Circuit

* Driver same
type as
D.U.T., VC =
480V





90%



V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = (E +E )

ts on off

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µ