Page 1
PD - 94625
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
SMPS IGBT
G
n-channel
IRGP50B60PD1
C
E
I
D
V
= 600V
CES
V
@ V
typ. = 2.00V
CE(on)
= 15V IC = 33A
GE
Equivalent MOSFET
Parameters
R
typ. = 61mΩ
CE(on)
(FET equivalent) = 50A
E
C
G
TO-247AC
Absolut e Maximum Ratings
Parameter Max. Units
V
CES
@ TC = 25°C
I
C
I
@ TC = 100°C Continu ous Collector C ur rent 45
C
I
CM
I
LM
@ TC = 25°C
I
F
I
@ TC = 100°C Diode Continous Forward Current 15
F
I
FRM
V
GE
@ TC = 25°C
P
D
P
@ TC = 100°C Maximum Power Dissipation 156
D
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Conti n uous Collector Cu r rent 75
Puls e C ol lector Cu rr en t (R ef. Fig. C. T.4) 150
Clamped Inductive Load Cur r ent
Diode Continous Forward Current 40
Maximum Repetitive Forward Current
Gate-to-Emitt er Volt age ±20 V
Maximum Power Dissipation 390 W
Operating Junction and -55 to +150
Stor ag e Temperat ur e Ra ng e °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mount ing Torque, 6-32 or M 3 Sc r ew 10 lbf·in (1.1 N· m )
d
e
150 A
60
Thermal Resist ance
Parameter Min. Typ. Max. Units
R
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.32 °C/W
θJC
R
θ
R
θCS
R
θ
(Diode)
JC
JA
Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
Thermal Resi stance, Case-to-Si nk (flat, greased surface) ––– 0.50 –––
Thermal Resi stance, Junction-to-Ambient (typic al socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)
1 www.irf.com
2/6/03
Page 2
IRGP50B60PD1
gy
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V
(BR)CES
∆V
R
G
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V
/∆T
Temperature Coeff. of Breakdown Voltage —0.31—V/°C
J
Internal Gate Resistance — 1.7 —
—2.002.35
V
CE(on)
Collector-to-Em i tt er Satu rat ion Voltage — 2.45 2.85 V
—2.602.95
—3.203.60
V
∆V
GE(th)
GE(th)
/∆TJ
Gate Thr es hold Voltage 3.0 4.0 5.0 V
Thresh old Voltage temp. coeffic i e nt — -10 — mV/°C
gfe Forwa r d Transconductance — 41 — S
I
CES
Collector-to-Emitter Leakage Current — 5.0 500 µA
—1.0—mA
V
FM
Diode F orw a r d Voltage D r op — 1.30 1. 70 V
—1.201.60
I
GES
Gate-to-Emitter Lea k age Current — — ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Qg Total Gate Charge (turn-on) — 205 308
Q
gc
Q
ge
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
eff.
C
oes
C
eff. (ER)
oes
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
t
rr
Q
rr
I
rr
Notes:
R
CE(on)
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
= 80% (V
CC
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C
oes
C
oes
2 www.irf.com
Gate-to-Coll ector Cha r ge (t ur n - on) — 70 105 nC
Gate-to-Emitter Charge (turn -on) — 30 45
Turn-O n Sw itching Loss — 255 305
Turn-Off Switc hing Los s — 375 44 5 µJ
Total Sw itchin g Lo ss — 630 75 0
Turn-On delay time — 30 40
Rise time — 10 15 ns
Turn-Off delay ti m e — 130 150
Fall time — 11 15
Turn-O n Sw itching Loss — 580 700
Turn-Off Switc hing Los s — 480 55 0 µJ
Total Sw i t c h i n g Lo ss — 10 60 1250
Turn-On delay time — 26 35
Rise time — 13 20 ns
Turn-Off delay ti m e — 146 165
Fall time — 15 20
Input C ap acitanc e — 36 48 —
Output Capacitance — 322 —
Revers e Tr a nsfer Cap ac itance — 56 — pF f = 1Mh z
Related)
g
g
Effective Output Capacitance (Time Related)
Effective Output Capacitance (Ener
Diode R everse Recovery Time — 42 60 ns
Diode R everse Recovery C harge — 80 180 nC
Peak Reverse Recovery Current — 4.0 6.0 A
typ. = equivalent on-resistance = V
), VGE = 15V, L = 28 µH, RG = 22 Ω.
CES
typ./ IC, where V
CE(on)
CE(on)
eff. is a fixed capacitance that gives the same charging time as C
eff.(ER) is a fixed capacitance that stores the same energy as C
—215—
—163—
—74120
— 220 600
—6.510
typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
while VCE is rising from 0 to 80% V
oes
while VCE is rising from 0 to 80% V
oes
V
= 0V, IC = 500µA
GE
V
= 0V, IC = 1mA (25°C -125°C)
GE
Ω
1MHz, Open Collector
= 33A, VGE = 15V
I
C
= 50A, VGE = 15V
I
C
I
= 33A, VGE = 15V, TJ = 125°C
C
= 50A, VGE = 15V, TJ = 125°C
I
C
I
= 250µA
C
= VGE, IC = 1.0mA
V
CE
V
= 50V, IC = 33A, PW = 80µs
CE
= 0V, VCE = 600V
V
GE
V
= 0V, VCE = 600V, TJ = 125°C
GE
= 15A, VGE = 0V
I
F
I
= 15A, VGE = 0V, TJ = 125°C
F
= ±20V, VCE = 0V
V
GE
Conditions
= 33A
I
C
V
= 400V
CC
= 15V
V
GE
I
= 33A, VCC = 390V
C
= +15V, RG = 3.3Ω, L = 200µH
V
GE
TJ = 25°C
= 33A, VCC = 390V
I
C
V
GE
= 25°C
T
J
= 33A, VCC = 390V
I
C
V
GE
= 125°C
T
J
I
= 33A, VCC = 390V
C
V
GE
T
= 125°C
J
V
GE
V
CC
V
GE
= 150°C, IC = 150A
T
J
V
CC
Rg = 22Ω, VGE = +15V to 0V
T
= 25°C IF = 15A, VR = 200V,
J
= 125°C
T
J
T
= 25°C IF = 15A, VR = 200V,
J
= 125°C
T
J
T
= 25°C IF = 15A, VR = 200V,
J
= 125°C
T
J
f
= +15V, RG = 3.3Ω, L = 200µH
f
= +15V, RG = 3.3Ω, L = 200µH
f
= +15V, RG = 3.3Ω, L = 200µH
f
= 0V
= 30V
= 0V, VCE = 0V to 480V
= 480V, V p =60 0V
di/dt = 200A/µs
di/dt = 200A/µs
di/dt = 200A/µs
.
CES
.
CES
4, 5,6,8,9
7,8,9
10
Ref.Fig
17
CT1
CT3
CT3
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
16
15
3
CT2
19
21
19,20,21,22
CT5
Page 3
IRGP50B60PD1
90
80
70
60
)
50
A
(
C
I
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
100
)
A
C
I
10
1
10 100 1000
V
(V)
CE
450
400
350
300
)
250
W
(
t
o
t
200
P
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
200
VGE = 15V
180
VGE = 12V
160
VGE = 10V
VGE = 8.0V
140
VGE = 6.0V
120
)
A
(
100
E
C
I
80
60
40
20
0
012345678910
V
(V)
CE
Fig. 3 - Reverse Bias SOA
TJ = 150°C; V
200
VGE = 15V
180
VGE = 12V
160
VGE = 10V
VGE = 8.0V
140
VGE = 6.0V
120
)
A
(
100
E
C
I
80
60
40
20
0
012345678910
V
CE
GE
(V)
=15V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
)
A
(
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
200
VGE = 15V
180
VGE = 12V
160
VGE = 10V
VGE = 8.0V
140
VGE = 6.0V
120
100
E
C
I
80
60
40
20
0
012345678910
V
(V)
CE
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
www.irf.com 3
Page 4
IRGP50B60PD1
900
800
700
TJ = 25°C
TJ = 125°C
600
)
500
A
(
E
400
C
I
300
200
TJ = 125°C
100
TJ = 25°C
0
0 5 10 15 20
V
(V)
GE
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
10
10
9
8
7
)
V
6
(
E
C
5
V
ICE = 15A
I
CE
I
CE
4
3
2
1
0 5 10 15 20
V
(V)
GE
Fig. 8 - Typical V
CE
vs. V
TJ = 25°C
100
= 33A
= 50A
GE
9
8
F
7
)
V
6
(
E
C
5
V
4
3
ICE = 15A
I
= 33A
CE
I
= 50A
CE
10
T = 150°C
J
T = 125°C
J
T = 25°C
Instant aneous Forward Cu rr e n t - I (A )
J
2
1
0 5 10 15 20
V
(V)
GE
Fig. 9 - Typical V
CE
vs. V
GE
TJ = 125°C
1
0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V (V)
FM
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
1200
1000
1000
)
800
)
J
µ
(
y
600
g
r
e
n
E
400
200
0
0 102030405060
Fig. 11 - Typ. Energy Loss vs. I
TJ = 125°C; L = 200µH; V
Diode clamp used: 30ETH06 (See C.T.3)
E
ON
E
IC (A)
= 390V, RG = 3.3Ω; V
CE
OFF
C
= 15V.
GE
s
n
(
e
m
i
T
100
g
n
i
h
c
i
w
S
10
td
OFF
t
F
td
ON
t
R
0 10 20 30 40 50 60
Fig. 12 - Typ. Switching Time vs. I
TJ = 125°C; L = 200µH; V
Diode clamp used: 30ETH06 (See C.T.3)
IC (A)
= 390V, RG = 3.3Ω; V
CE
C
= 15V.
GE
4 www.irf.com
Page 5
IRGP50B60PD1
1000
900
800
)
J
µ
700
(
y
g
r
e
600
n
E
500
400
300
0 5 10 15 20 25
E
Fig. 13 - Typ. Energy Loss vs. R
TJ = 125°C; L = 200µH; V
Diode clamp used: 30ETH06 (See C.T.3)
40
30
)
J
µ
(
20
s
e
o
E
10
ON
CE
E
OFF
RG (Ω)
= 390V, I
= 33A; V
CE
1000
)
s
n
(
e
m
i
T
g
n
i
h
c
i
w
S
G
= 15V
GE
TJ = 125°C; L = 200µH; V
td
OFF
100
td
ON
t
F
t
R
10
0 5 10 15 20 25
RG (Ω)
Fig. 14 - Typ. Switching Time vs. R
= 390V, I
CE
CE
G
= 33A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
)
1000
F
p
(
e
c
n
a
t
i
c
a
p
a
100
C
Coes
Cres
0
0 100 200 300 400 500 600 700
VCE (V)
Fig. 15- Typ. Output Capacitance
Stored Energy vs. V
16
14
12
10
)
V
(
8
E
G
V
6
4
2
0
0 50 100 150 200 250
Q G, Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. V
I
= 33A
CE
CE
400V
GE
10
0 20 40 60 80 100
V
(V)
CE
Fig. 16- Typ. Capacitance vs. V
VGE= 0V; f = 1MHz
1.4
)
V
(
)
1.2
n
o
(
E
C
V
d
e
z
i
l
a
1.0
m
r
o
N
0.8
-50 0 50 100 150 200
TJ (°C)
Fig. 18 - Normalized Typ. V
vs. Junction Temperature
CE
CE(on)
IC = 33A, VGE= 15V
www.irf.com 5
Page 6
IRGP50B60PD1
100
V = 200V
R
T = 125°C
J
T = 25°C
J
80
I = 30A
F
60
rr
t - (ns)
40
20
100 1000
di /d t - (A/µs)
I = 15A
F
I = 5.0A
F
f
Fig. 19 - Typical Reverse Recovery vs. dif/dt
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 30A
F
I = 15A
F
10
IRRM
I - (A)
I = 5.0A
F
1
100 1000
di /dt - (A/µs)
f
Fig. 20 - Typical Recovery Current vs. dif/dt
800
V = 200V
R
T = 125°C
J
T = 25°C
J
600
I = 30A
F
400
RR
Q - (nC)
I = 15A
F
I = 5.0A
F
200
0
100 1000
di /d t - (A/µs)
f
1000
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 5.0A
F
I = 15A
F
I = 30A
di(rec)M/dt - (A/µs)
F
100
100 1000
Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di
di /dt - (A/µs)
f
/dt vs. dif/dt,
(rec)M
6 www.irf.com
Page 7
IRGP50B60PD1
τ
τ
1
)
C
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
0.001
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.01
0.02
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
1
2
R
R
1
2
τ
2
τ
2
Ri (°C/W) τi (sec)
τ
C
0.157 0.000346
0.163 4.28
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthj c + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
)
C
1
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
0.001
D = 0.50
0.20
0.10
0.1
0.05
τ
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
1
R
1
R
2
3
R
2
τ
2
τ
2
Ri (°C/W) τi (sec)
R
3
τ
C
0.363 0.000112
τ
3
0.864 0.001184
τ
3
0.473 0.032264
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthj c + Tc
t1 , Rectangular Pulse Durat ion (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com 7
Page 8
IRGP50B60PD1
0
1K
DUT
L
L
VCC
80 V
DUT
480V
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
PFC diode
L
DUT /
DRIVER
Rg
Fig.C.T.3 - Switching Loss Circuit
REVERSE RECOVERY CIRCUIT
VCC
Fig.C.T.2 - RBSOA Circuit
V
CC
R =
I
CM
DUT
Rg
Fig.C.T.4 - Resistive Load Circuit
VCC
V = 200V
R
Ω
0.01
L = 70µH
D.U.T.
dif/dt
ADJUST
G
D
IRFP250
S
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
8 www.irf.com
Page 9
IRGP50B60PD1
600
550
500
450
(V )
CE
V
400
350
300
250
200
150
100
50
tf
90% I
CE
5% V
CE
5% I
CE
0
-50
Eof f
-100
-0.20 0.00 0.20 0.40
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
60
50
40
30
20
10
0
-10
(A)
CE
I
450
400
90% I
350
300
tr
CE
TEST CURRENT
250
(V)
200
CE
V
150
100
50
10% I
CE
5% V
CE
0
Eon Loss
-50
-0.10 0.00 0.10 0.20
Time(µs)
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
90
80
70
60
50
40
30
20
10
0
-10
(A)
CE
I
I
F
0
1
di /dt
1. dif/dt - Rate of change of current
through zero crossing
2. I
- Peak reverse recovery current
RRM
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
RRM
Fig. WF3 - Reverse Recovery Waveform and
3
t
rr
t
a
2
I
RRM
f
4. Qrr - Area under curve defined by t
and I
5. di
current during tb portion of t
t
b
0.5
di(rec)M/dt
0.75
I
RRM
RRM
t
Qrr =
2
/dt - Peak rate of change of
(rec)M
rr
4
Q
rr
I
RRM
5
rr
X I
RRM
rr
Definitions
www.irf.com 9
Page 10
IRGP50B60PD1
No t es: This part m arking information app lies to devices produced before 02/26/2001 or for
Not es: This p art markin g info rmation applies to devices pro duced after 02/26/2001
0
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
15.90 (.626)
15.30 (.602)
- B -
20.30 (.800)
19.70 (.775)
1
2
3
14.80 (.583)
*
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.21 5)
2X
3.40 (.13 3)
3.00 (.11 8)
1.40 (.056)
3X
1.00 (.039)
0.25 (.010)
- A -
3.65 (.143)
3.55 (.140)
0.25 (.01 0)
5.50 (.217)
5.50 (.217)
2X
4.50 (.177)
- C -
4.30 (.170)
3.70 (.145)
M
- D -
5.30 (.20 9)
M
M
D
B
S
A
C
4.70 (.18 5)
2.50 (.089)
1.50 (.059)
4
0.80 (.031)
3X
0.40 (.016)
2.60 (.10 2)
2.20 (.08 7)
NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENS ION : INCH.
3 DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO-247AC.
LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
LONGER LEADED (20mm)
*
VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
TO-247AC Part Marking Information
parts manufactured in GB.
EXAMPLE: THIS IS AN IRFPE30
EXAMPLE:
WITH ASSEMBLY
LOT CODE 3A1Q
THIS IS A N IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBL ED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
INTERNAT IONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
INTERNATIONAL
RECT IFIER
LOGO
ASSEMBLY
LO T CODE
IRFPE30
3A1Q
IRFPE30
56 57
PART NUMBER
9302
DA TE CODE
(YYWW)
YY = YEAR
WW = WEE K
PA RT NUMBER
035H
DATE CODE
YEAR 0 = 200
WEEK 3 5
LINE H
TO-247AC package is not recommended for Surface Mount Application.
This product has been designed and qualified for Industrial
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
10 www.irf.com
Data and specifications subject to change without notice.
market.
Qualification Standards can be found on IR’s Web site.
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/03
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