Datasheet IRGP4063DPBF Specification

INSULATED GATE BIPOLAR TRANSISTOR WITH

GC E

G G E

ULTRAFAST SOFT RECOVERY DIODE

Features

• Low V

• Low switching losses

• Maximum Junction temperature 175 °C

•5 μS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (I

• Positive V

• Ultra fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead Free Package

Trench IGBT Technology

CE (ON)

Temperature co-efficient

CE (ON)

LM

)

G

n-channel

IRGP4063DPbF

IRGP4063D-EPbF

C

tSC ≥ 5μs, T

E

V

= 600V

CES

IC = 48A, TC = 100°C

= 175°C

J(max)

V

typ. = 1.65V

CE(on)

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to Low V

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

Absolute Maximum Ratings

V

CES

I

@ TC = 25°C

C

@ TC = 100°C

I

C

I

CM

I

LM

I

@ TC = 25°C

F

@ TC = 100°C

I

F

I

FM

V

GE

P

@ TC = 25°C

D

@ TC = 100°C

P

D

T

J

T

STG

Thermal Resistance

R

(IGBT)

JC

θ

(Diode)

R

JC

θ

R

CS

θ

R

JA

θ

and Low Switching losses

CE (ON)

Collector-to-Emitt er Voltage 600 V

Continuous Collector Current 96

Continuous Collector Current 48

Pulse Collector Current 200

Clamped Inductive Load Current

Diode Continous Forward Current 96

Diode Continous Forward Current 48

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage ±20 V

Transient Gate-to-Emitter Voltage ±30

Maximum Power Dissipation 330 W

Maximum Power Dissipation 170

Operating Junct ion and -55 to +175

Storage Temperature Range °C

Soldering Temperature, f or 10 sec. 300 (0.063 in. (1.6mm) from c ase)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W

Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.92

Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––

Thermal Resistance, Junction-to-Ambient (typical soc ket mount) ––– ––– 40

Parameter Max. Units

c

e

Parameter Min. Typ. Max. Units

C

E

C

G

IRGP4063DPbF

IRGP4063D-EPbF

Gate Collector Emitter

192 A

192

C

IRGP4063DPbF/IRGP4063D-EPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

ΔV

(BR)CES

V

CE(on)

V

GE(th)

Δ

V

GE(th)

gfe Forward Transconductance — 32 — S

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

E

on

E

off

E

total

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

total

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

RBSOA Reverse Bias Safe Operating Area FULL SQUARE

SCSOA Short Circuit Safe Operating Area 5 — — μs

Erec Reverse Recovery Energy of the Diode — 845 — μJ

t

rr

I

rr

Collector-to-Emitter Breakdown Voltage

/ΔT

Temperature Coeff. of Breakdown Voltage —0.30—V/°C

J

600——V

—1.652.14

Collector-to-Emitter Saturation Voltage — 2.0 — V

—2.05—

Gate Threshold Voltage 4.0 — 6.5 V

/ΔTJ

Threshold Voltage temp. coefficient — -21 — mV/°C

Collector-to-Emitter Leakage Current — 1.0 150 μA

— 450 1000

Diode Forward Voltage Drop — 1.95 2.91 V

—1.45—

Gate-to-Emitter Leakage Current — — ±100 nA

Parameter Min. Typ. Max. Units

Total Gate Charge (turn-on) — 95 140

Gate-to-Emitter Charge (turn-on) — 28 42 nC

Gate-to-Collector Charge (turn-on) — 35 53

Turn-On Switching Loss — 625 1141

Turn-Off Switching Loss — 1275 1481 μJ

Total Switching Loss — 1900 2622

Turn-On delay time — 60 78

Rise time — 40 56 ns

Turn-Off delay time — 145 176

Fall time — 35 46

Turn-On Switching Loss — 1625 —

Turn-Off Switching Loss — 1585 — μJ

Total Switching Loss — 3210 —

Turn-On delay time — 55 —

Rise time — 45 — ns

Turn-Off delay time — 165 —

Fall time — 45 —

Input Capacitance — 3025 — pF

Output Capacitance — 245 —

Reverse Transfer Capacitance — 90 — f = 1.0Mhz

Diode Reverse Recovery Time — 115 — ns

Peak Reverse Recovery Current — 40 — A

Ref.Fig

= 0V, IC = 150μA

V

GE

V

= 0V, IC = 1mA (25°C-175°C) CT6

GE

= 48A, VGE = 15V, TJ = 25°C

I

C

= 48A, VGE = 15V, TJ = 150°C

I

C

= 48A, VGE = 15V, TJ = 175°C

I

C

= VGE, IC = 1.4mA

V

CE

= VGE, IC = 1.0mA (25°C - 175°C)

V

CE

= 50V, IC = 48A, PW = 80μs

V

CE

= 0V, VCE = 600V

V

GE

= 0V, VCE = 600V, TJ = 175°C

V

GE

= 48A

I

F

= 48A, TJ = 175°C

I

F

= ±20V

V

GE

= 48A

I

C

V

= 15V CT1

GE

= 400V

V

CC

I

= 48A, VCC = 400V, VGE = 15V CT4

C

= 10Ω, L = 200μH, LS = 150nH, TJ = 25°C

R

G

Energy losses include tail & diode reverse recovery

= 48A, VCC = 400V, VGE = 15V

I

C

R

= 10Ω, L = 200μH, LS = 150nH, TJ = 25°C

G

= 48A, VCC = 400V, VGE=15V

I

C

R

=10Ω, L=200μH, LS=150nH, TJ = 175°C

G

Energy losses include tail & diode reverse recovery WF1, WF2

I

= 48A, VCC = 400V, VGE = 15V 14, 16

C

= 10Ω, L = 200μH, LS = 150nH

R

G

T

= 175°C WF1

J

V

= 0V 23

GE

= 30V

V

CC

T

= 175°C, IC = 192A

J

V

= 480V, Vp =600V

CC

f

Conditions

f

CT6

5,6,7

9,10,11

9, 10,

11, 12

8

Ref.Fig

24

CT4

13, 15

CT4

WF2

4

CT2

Rg = 10Ω, VGE = +15V to 0V

V

= 400V, Vp =600V 22, CT3

CC

Rg = 10Ω, VGE = +15V to 0V

T

= 175°C

J

= 400V, IF = 48A

V

CC

V

= 15V, Rg = 10Ω, L =200μH, Ls = 150nH WF3

GE

WF4

17, 18, 19

20, 21

Notes:

 V

= 80% (V

CC

), VGE = 20V, L = 200μH, RG = 10Ω.

CES

 This is only applied to TO-247AC package.  Pulse width limited by max. junction temperature.  Refer to AN-1086 for guidelines for measuring V

(BR)CES

safely.

IRGP4063DPbF/IRGP4063D-EPbF

100

90

80

70

60

) A

(

50

C

I

40

30

20

10

0

0 25 50 75 100 125 150 175 200

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

1000

100

) A

(

10

C

I

1

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000

VCE (V)

10μsec

100μsec

1msec

DC

Fig. 3 - Forward SOA

TC = 25°C, TJ ≤ 175°C; V

GE

=15V

350

300

250

)

200

W

(

t o

t

150

P

100

50

0

0 25 50 75 100 125 150 175 200

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

1000

100

) A

(

C

I

10

1

10 100 1000

VCE (V)

Fig. 4 - Reverse Bias SOA

TJ = 175°C; V

GE

=15V

200

180

160

140

120

) A

(

100

E C

I

80

60

40

20

0

0 2 4 6 8 10

V

CE

VGE = 18V

VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

(V)

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80μs

200

180

160

140

120

) A

(

100

E C

I

80

60

40

20

0

0 2 4 6 8 10

V

CE

VGE = 18V

VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

(V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80μs

IRGP4063DPbF/IRGP4063D-EPbF

200

VGE = 18V

180

VGE = 15V

160

VGE = 12V VGE = 10V

140

VGE = 8.0V

120

) A

(

100

E C

I

80

60

40

20

0

0 2 4 6 8 10

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 175°C; tp = 80μs

20

18

16

14

12

) V

(

10

E C

V

8

6

4

2

0

5 101520

V

Fig. 9 - Typical V

GE

(V)

CE

ICE = 24A

I

= 48A

CE

I

= 96A

CE

vs. V

GE

TJ = -40°C

20

18

16

14

12

) V

(

10

E C

V

8

6

4

2

0

5 101520

V

Fig. 11 - Typical V

GE

(V)

CE

ICE = 24A

I

= 48A

CE

I

= 96A

CE

vs. V

GE

TJ = 175°C

200

180

160

140

120

) A

(

100

F

I

80

60

40

20

0

0.0 1.0 2.0 3.0 4.0

-40°c 25°C

175°C

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80μs

20

18

16

14

12

) V

(

10

E C

V

8

6

4

2

0

5 101520

V

Fig. 10 - Typical V

GE

ICE = 24A

I

CE

I

CE

(V)

CE

= 48A

= 96A

vs. V

GE

TJ = 25°C

200

180

160

140

120

) A

(

100

E C

I

80

60

40

20

0

0 5 10 15

TJ = 25°C

TJ = 175°C

V

(V)

GE

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10μs

IRGP4063DPbF/IRGP4063D-EPbF

6000

5000

4000

) J

μ

( y

3000

g

r e n E

2000

1000

0

0 50 100 150

Fig. 13 - Typ. Energy Loss vs. I

TJ = 175°C; L = 200μH; V

5000

4500

4000

)

3500

J

μ

( y

3000

g

r e n E

2500

2000

E

OFF

E

ON

IC (A)

= 400V, RG = 10Ω; V

CE

E

OFF

1000

) s n

( e m

i T

100

g n

i h c

i w S

10

C

= 15V

GE

E

ON

TJ = 175°C; L = 200μH; V

1000

) s n

( e m

i T

100

g n

i h c

i w S

td

OFF

td

ON

t

F

t

R

0 20 40 60 80 100

IC (A)

Fig. 14 - Typ. Switching Time vs. I

= 400V, RG = 10Ω; V

CE

td

OFF

t

R

C

GE

td

ON

t

F

= 15V

1500

1000

0 25 50 75 100 125

Fig. 15 - Typ. Energy Loss vs. R

TJ = 175°C; L = 200μH; V

45

40

35

30

)

25

A

(

R R

20

I

15

10

5

0

0 20 40 60 80 100

Fig. 17 - Typ. Diode IRR vs. I

TJ = 175°C

Rg (Ω)

= 400V, I

CE

R

G =

R

G =

R

G =

R

G =

IF (A)

10

Ω

22

47

100

Ω

CE

Ω

G

= 48A; V

F

GE

= 15V

10

0 25 50 75 100 125

Fig. 16 - Typ. Switching Time vs. R

TJ = 175°C; L = 200μH; V

45

40

35

)

30

A

(

R R

I

25

20

15

10

0 25 50 75 100 125

Fig. 18 - Typ. Diode IRR vs. R

TJ = 175°C

RG (Ω)

= 400V, I

CE

RG (

Ω)

= 48A; V

CE

G

= 15V

GE

G

IRGP4063DPbF/IRGP4063D-EPbF

45

40

35

)

30

A

(

R R

I

25

20

15

10

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 19 - Typ. Diode IRR vs. diF/dt

VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C

900

800

700

600

) J

μ

(

500

y g

r e

400

n E

300

200

100

RG = 10Ω

RG = 22Ω

RG = 47Ω

RG = 100Ω

4000

3500

96A

3000

) C

n

(

2500

100

R R

Q

2000

1500

1000

Ω

0 500 1000 1500

47

Ω

48A

22

diF /dt (A/μs)

10

Ω

24A

Fig. 20 - Typ. Diode QRR vs. diF/dt

VCC = 400V; VGE = 15V; TJ = 175°C

18

16

14

) s

12

μ

( e m

i

10

T

8

6

400

350

300

250

200

150

100

C u

r

e n t (

A )

0

0 20 40 60 80 100

IF (A)

Fig. 21 - Typ. Diode ERR vs. I

TJ = 175°C

10000

)

1000

F p

( e

c n a

t

i c a p a

100

C

10

0 20 40 60 80 100

V

CE

Fig. 23 - Typ. Capacitance vs. V

VGE= 0V; f = 1MHz

(V)

Cies

Coes

Cres

4

8 1012141618

VGE (V)

F

Fig. 22 - VGE vs. Short Circuit Time

VCC = 400V; TC = 25°C

16

V

CES

= 300V

= 400V

CE

14

) V

( e

12

g a

t

l o V

10

r e

t

i

8

m E

o

t

-

6

e

t a

G

4

,

E G

V

2

0

0 255075100

Q G, Total Gate Charge (nC)

Fig. 24 - Typical Gate Charge vs. V

I

= 48A; L = 600μH

CE

50

GE

IRGP4063DPbF/IRGP4063D-EPbF

τ

1

)

0.1

C J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.01

0.001

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

R

1

R

2

3

R

2

τ

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

τ

3

0.0872 0.000114

0.1599 0.001520

τ

3

0.2020 0.020330

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

D = 0.50

1

)

C J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.1

0.01

0.001

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

R

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.2774 0.000908

τ

3

0.3896 0.003869

τ

3

0.2540 0.030195

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

IRGP4063DPbF/IRGP4063D-EPbF

e

L

80 V

0

VCCDUT

1K

+

-

Rg

DUT

VCC

Fig.C.T.1 - Gate Charge Circuit (turn-off)

4X

DC

R =

DUT

R

VCC

ICM

SH

Fig.C.T.3 - S.C. SOA Circuit

VCC

Fig.C.T.2 - RBSOA Circuit

diode clamp /

DUT

L

-5V

DUT /

DRIVER

Rg

Fig.C.T.4 - Switching Loss Circuit

C force

100K

VCC

D1 22K

C sens

0.0075μF

E sense

DUT

Rg

Fig.C.T.5 - Resistive Load Circuit

VCC

DUT

G force

E force

Fig.C.T.6 - BVCES Filter Circuit

IRGP4063DPbF/IRGP4063D-EPbF

RR

RRtRR

CEICE

tf

ON

90% test

700

600

500

400

(V)

300

CE

V

90% I

CE

200

5% V

CE

100

5% I

CE

0

E

Loss

OFF

-100

-0.40 0.10 0.60 1.10

Time(μs)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175°C using Fig. CT.4

140

120

100

80

60

40

20

0

-20

(A)

CE

I

700

600

tr

500

TEST

CURRENT

(V)

CE

V

400

300

200

5% V

100

10% test

current

0

E

-100

6.20 6.40 6.60 6.80 7.00

Time (μs)

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175°C using Fig. CT.4

140

120

100

80

60

(A)

CE

I

40

CE

20

0

-20

60

50

40

Q

30

20

10

(A)

RR

I

0

-10

-20

Peak

I

10% Peak

I

RR

-30

-40

-0.15 -0.05 0.05 0.15 0.25

time (μS)

Fig. WF3 - Typ. Diode Recovery Waveform

@ TJ = 175°C using Fig. CT.4

600

500

V

400

300

(V)

CE

V

200

100

0

-100

-5.00 0.00 5.00 10.00

time (μS)

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 25°C using Fig. CT.3

600

500

400

300

200

100

0

-100

(A)

CE

I

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

IRGP4063DPbF/IRGP4063D-EPbF

TO-247AC Part Marking Information

EXAMPLE:

Note: "P" in assembly line position

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

THIS IS AN IRFPE30 WIT H AS S E MB LY

LOT CODE 5657 AS S E MB L E D ON WW 3 5 , 2 001 IN THE AS SEMBLY LINE "H"

indi cates "L ead-F ree"

INTERNAT IONAL

RECTIFIER

LOGO

AS S E MB L Y

IRFPE30

56 57

PART NUMBER

135H

DAT E CODE YEAR 1 = 2001 WE E K 35LOT CODE LINE H

TO-247AD Package Outline

Dimensions are shown in millimeters (inches)

IRGP4063DPbF/IRGP4063D-EPbF

TO-247AD Part Marking Information

E X AM P L E : T H IS IS AN IR G P 30 B 12 0 K D -E

N ote: "P " in as s em b ly lin e p os ition

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

WITH ASS EMB LY LOT CODE 5657

ASS E MB LE D ON W W 35, 2000 IN T H E AS S E M B L Y L IN E "H "

indicates "Lead-F ree"

IN T E R N AT IO N AL

R E C T IF IE R

LOGO

ASSEMBLY LOT CODE

035H

5 6 57

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

PART NUMBER

DATE CODE YEAR 0 = 2000

WEEK 35 LINE H

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.