Page 1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead-Free
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
SMPS IGBT
G
n-channel
PD - 95329
IRGP35B60PDPbF
C
E
I
D
V
= 600V
CES
V
@ V
typ. = 1.85V
CE(on)
= 15V IC = 22A
GE
Equivalent MOSFET
Parameters
R
typ. = 84mΩ
CE(on)
(FET equivalent) = 35A
G
TO-247AC
E
C
Absolute Maximum Ratings
V
CES
@ TC = 25°C
I
C
I
@ TC = 100°C
C
I
CM
I
LM
@ TC = 25°C
I
F
I
@ TC = 100°C
F
I
FRM
V
GE
@ TC = 25°C
P
D
P
@ TC = 100°C
D
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Continuous Collector Current 60
Continuous Collector Current 34
Pulse Collector Current (Ref. Fig. C.T.4) 120
Clamped Inductive Load Current
Diode Continous Forward Current 40
Diode Continous Forward Current 15
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage ±20 V
Maximum Power Dissipation 308 W
Maximum Power Dissipation 123
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
R
θ
R
θJC
R
θ
R
θJA
(IGBT)
JC
(Diode)
CS
Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.41 °C/W
Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)
Parameter Max. Units
d
e
120 A
60
Parameter Min. Typ. Max. Units
6/2/04
Page 2
IRGP35B60PDPbF
gy
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
R
G
V
CE(on)
V
GE(th)
∆V
(BR)CES
GE(th)
/∆TJ
Collector-to-Emitter Breakdown Voltage
/∆T
Temperature Coeff. of Breakdown Voltage
J
Internal Gate Resistance — 1.7 —
Collector-to-Emitter Saturation Voltage — 2.25 2.55 V
Gate Threshold Voltage 3.0 4.0 5.0 V
Threshold Voltage temp. coefficient — -10 — mV/°C
gfe Forward Transconductance — 36 — S
I
V
I
CES
FM
GES
Collector-to-Emitter Leakage Current — 3.0 375 µA
Diode Forward Voltage Drop — 1.30 1.70 V
Gate-to-Emitter Leakage Current — — ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
Qg Total Gate Charge (turn-on) — 160 240
Q
gc
Q
ge
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
C
eff.
oes
C
eff. (ER)
oes
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
t
rr
Q
rr
I
rr
Gate-to-Collector Charge (turn-on) — 55 83 nC
Gate-to-Emitter Charge (turn-on) — 21 32
Turn-On Switching Loss — 220 270
Turn-Off Switching Loss — 215 265 µJ
Total Switching Loss — 435 535
Turn-On delay time — 26 34
Rise time — 6.0 8.0 ns
Turn-Off delay time — 110 122
Fall time — 8.0 10
Turn-On Switching Loss — 410 465
Turn-Off Switching Loss — 330 405 µJ
Total Switching Loss — 740 870
Turn-On delay time — 26 34
Rise time — 8.0 11 ns
Turn-Off delay time — 130 150
Fall time — 12 16
Input Capacitance — 3715 —
Output Capacitance — 265 —
Reverse Transfer Capacitance — 47 — pF f = 1Mhz
Effective Output Capacitance (Time Related)
Effective Output Capacitance (Ener
g
Related)
Diode Reverse Recovery Time — 42 60 ns
Diode Reverse Recovery Charge — 80 180 nC
Peak Reverse Recovery Current — 4.0 6.0 A
600 — — V
—0.78—V/°C
—1.852.15
—2.372.80
—3.003.45
—0.35—mA
—1.201.60
—135—
g
—179—
—74120
— 220 600
—6.510
V
= 0V, IC = 500µA
GE
V
= 0V, IC = 1mA (25°C-125°C)
GE
1MHz, Open Collector
Ω
I
= 22A, VGE = 15V
C
= 35A, VGE = 15V
I
C
= 22A, VGE = 15V, TJ = 125°C
I
C
I
= 35A, VGE = 15V, TJ = 125°C
C
I
= 250µA
C
V
= VGE, IC = 1.0mA
CE
V
= 50V, IC = 22A, PW = 80µs
CE
= 0V, VCE = 600V
V
GE
= 0V, VCE = 600V, TJ = 125°C
V
GE
= 15A, VGE = 0V
I
F
= 15A, VGE = 0V, TJ = 125°C
I
F
V
= ±20V, VCE = 0V
GE
Conditions
= 22A
I
C
= 400V
V
CC
V
= 15V
GE
I
= 22A, VCC = 390V
C
V
= +15V, RG = 3.3Ω, L = 200µH
GE
T
J
= 22A, VCC = 390V
I
C
V
GE
T
J
I
= 22A, VCC = 390V
C
V
GE
T
J
= 22A, VCC = 390V
I
C
V
GE
T
J
V
GE
V
CC
V
GE
T
J
V
CC
Rg = 22Ω, VGE = +15V to 0V
T
J
T
J
T
J
T
J
T
J
T
J
f
= 25°C
= +15V, RG = 3.3Ω, L = 200µH
= 25°C
f
= +15V, RG = 3.3Ω, L = 200µH
= 125°C
f
= +15V, RG = 3.3Ω, L = 200µH
= 125°C
f
= 0V
= 30V
= 0V, VCE = 0V to 480V
= 150°C, IC = 120A
= 480V, Vp =600V
= 25°C IF = 15A, VR = 200V,
= 125°C
di/dt = 200A/µs
= 25°C IF = 15A, VR = 200V,
= 125°C
di/dt = 200A/µs
= 25°C IF = 15A, VR = 200V,
= 125°C
di/dt = 200A/µs
Ref.Fig
4, 5,6,8,9
7,8,9
10
17
CT1
CT3
CT3
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
16
15
3
CT2
19
21
19,20,21,22
CT5
Notes:
R
typ. = equivalent on-resistance = V
CE(on)
typ./ IC, where V
CE(on)
typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID
CE(on)
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
= 80% (V
CC
), VGE = 15V, L = 28 µH, RG = 22 Ω.
CES
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C
eff. is a fixed capacitance that gives the same charging time as C
oes
C
eff.(ER) is a fixed capacitance that stores the same energy as C
oes
2 www.irf.com
while VCE is rising from 0 to 80% V
oes
while VCE is rising from 0 to 80% V
oes
CES
CES
.
.
Page 3
IRGP35B60PDPbF
70
60
50
40
)
A
(
C
I
30
20
10
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
100
)
A
C
I
10
350
300
250
)
200
W
(
t
o
t
150
P
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
70
VGE = 15V
VGE = 12V
60
VGE = 10V
VGE = 8.0V
50
VGE = 6.0V
)
40
A
(
E
C
I
30
20
1
10 100 1000
V
(V)
CE
Fig. 3 - Reverse Bias SOA
TJ = 150°C; V
70
VGE = 15V
60
VGE = 12V
VGE = 10V
50
VGE = 8.0V
VGE = 6.0V
)
40
A
(
E
C
I
30
20
10
0
012345
V
CE
GE
(V)
=15V
10
0
012345
V
(V)
CE
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
70
VGE = 15V
60
VGE = 12V
VGE = 10V
50
VGE = 8.0V
VGE = 6.0V
)
40
A
(
E
C
I
30
20
10
0
012345
V
(V)
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
www.irf.com 3
Page 4
IRGP35B60PDPbF
800
700
TJ = 25°C
TJ = 125°C
600
500
)
A
(
400
E
C
I
300
200
TJ = 125°C
100
TJ = 25°C
0
0 5 10 15 20
V
(V)
GE
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
10
10
9
8
7
)
V
6
(
E
C
5
V
ICE = 11A
I
CE
I
CE
4
3
2
1
0 5 10 15 20
V
(V)
GE
Fig. 8 - Typical V
CE
vs. V
TJ = 25°C
100
= 22A
= 35A
GE
9
8
F
7
)
V
6
(
E
C
5
V
4
3
ICE = 11A
I
= 22A
CE
I
= 35A
CE
10
T = 150°C
J
T = 125°C
J
T = 25°C
I nstant aneous For ward Current - I (A)
J
2
1
0 5 10 15 20
V
(V)
GE
Fig. 9 - Typical V
CE
vs. V
TJ = 125°C
800
GE
1
0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V (V)
FM
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
1000
700
600
)
500
J
µ
(
y
400
g
r
e
n
300
E
E
ON
E
OFF
200
)
s
100
n
(
e
m
i
T
g
n
i
h
c
i
w
S
td
OFF
td
ON
t
10
F
t
R
100
0
0 5 10 15 20 25 30 35 40
Fig. 11 - Typ. Energy Loss vs. I
TJ = 125°C; L = 200µH; V
Diode clamp used: 30ETH06 (See C.T.3)
IC (A)
= 390V, RG = 3.3Ω; V
CE
C
= 15V.
GE
1
0 10 20 30 40
Fig. 12 - Typ. Switching Time vs. I
TJ = 125°C; L = 200µH; V
Diode clamp used: 30ETH06 (See C.T.3)
IC (A)
= 390V, RG = 3.3Ω; V
CE
C
= 15V.
GE
4 www.irf.com
Page 5
IRGP35B60PDPbF
800
700
600
)
500
J
µ
(
y
400
g
r
e
n
E
300
200
100
0
0 10 20 30 40 50
Fig. 13 - Typ. Energy Loss vs. R
TJ = 125°C; L = 200µH; V
Diode clamp used: 30ETH06 (See C.T.3)
30
25
20
)
J
µ
(
15
s
e
o
E
10
5
E
ON
= 390V, I
CE
E
OFF
RG (Ω)
= 22A; V
CE
1000
td
OFF
)
s
100
n
(
e
m
i
T
g
n
i
h
c
i
w
S
G
= 15V
GE
TJ = 125°C; L = 200µH; V
td
ON
t
F
10
t
R
1
0 10 20 30 40 50
RG (Ω)
Fig. 14 - Typ. Switching Time vs. R
= 390V, I
CE
= 22A; V
CE
G
= 15V
GE
Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
)
1000
F
p
(
e
c
n
a
t
i
c
a
p
a
100
C
Coes
Cres
0
0 100 200 300 400 500 600 700
VCE (V)
Fig. 15- Typ. Output Capacitance
Stored Energy vs. V
16
14
12
10
)
V
(
8
E
G
V
6
4
2
0
0 50 100 150 200
Q G, Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. V
I
= 22A
CE
CE
400V
GE
10
0 20 40 60 80 100
V
(V)
CE
Fig. 16- Typ. Capacitance vs. V
VGE= 0V; f = 1MHz
1.4
)
V
(
)
1.2
n
o
(
E
C
V
d
e
z
i
l
a
1.0
m
r
o
N
0.8
-50 0 50 100 150 200
TJ (°C)
Fig. 18 - Normalized Typ. V
vs. Junction Temperature
CE
CE(on)
IC = 22A, VGE= 15V
www.irf.com 5
Page 6
IRGP35B60PDPbF
100
V = 200V
R
T = 125°C
J
T = 25°C
J
80
I = 30A
F
60
rr
t - (ns)
40
20
100 1000
di /dt - (A/µs)
I = 15A
F
I = 5.0A
F
f
Fig. 19 - Typical Reverse Recovery vs. dif/dt
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 30A
F
I = 15A
F
10
IRRM
I - (A)
I = 5.0A
F
1
100 1000
di /dt - (A/µs)
f
Fig. 20 - Typical Recovery Current vs. dif/dt
800
V = 200V
R
T = 125°C
J
T = 25°C
J
600
I = 30A
F
400
RR
Q - (nC)
I = 15A
F
I = 5.0A
F
200
0
100 1000
di /dt - (A/µs)
f
1000
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 5.0A
F
I = 15A
F
I = 30A
di(rec)M/dt - (A/µs)
F
100
100 1000
Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di
di /dt - (A/µs)
f
/dt vs. dif/dt,
(rec)M
6 www.irf.com
Page 7
IRGP35B60PDPbF
τ
τ
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.01
0.02
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
1
R
1
R
2
3
R
2
τ
2
τ
2
Ri (°C/W) τi (sec)
R
3
τ
C
0.139 0.000257
τ
3
0.077 0.001418
τ
3
0.194 0.020178
Notes:
1. Duty Factor D = t1/t2
)
C
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
0.001
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
)
C
1
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
0.001
D = 0.50
0.20
0.10
0.1
0.05
τ
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
1
R
1
R
2
3
R
2
τ
2
τ
2
Ri (°C/W) τi (sec)
R
3
τ
C
0.363 0.000112
τ
3
0.864 0.001184
τ
3
0.473 0.032264
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com 7
Page 8
IRGP35B60PDPbF
0
1K
DU T
L
L
VCC
80 V
DUT
480 V
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
PFC diode
L
DUT /
DRIVER
Rg
Fig.C.T.3 - Switching Loss Circuit
REVERSE RECOVERY CIRCUIT
VCC
Fig.C.T.2 - RBSOA Circuit
V
CC
R =
I
CM
DUT
Rg
Fig.C.T.4 - Resistive Load Circuit
VCC
V = 200V
R
Ω
0.01
L = 70µH
D.U.T.
dif/dt
ADJUST
G
D
IRFP250
S
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
8 www.irf.com
Page 9
IRGP35B60PDPbF
450
400
350
tf
300
90% I
5% V
5% I
CE
CE
CE
250
(V)
200
CE
V
150
100
50
0
Eoff Loss
-50
-0.20 0.00 0.20 0.40 0.60 0.80
Time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
45
40
35
30
25
20
15
10
5
0
-5
450
400
350
TEST CURRENT
300
250
(V)
(A)
CE
I
200
CE
V
150
90% test current
100
5% V
50
0
CE
Eon Loss
-50
45
40
35
30
25
20
15
10
5
0
-5
(A)
CE
I
9.00 9.20 9.40 9.60
Time (µs)
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
I
F
0
1
di /dt
1. dif/dt - Rate of change of current
through zero crossing
2. I
- Peak reverse recovery current
RRM
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
RRM
Fig. WF3 - Reverse Recovery Waveform and
3
t
rr
t
a
2
I
RRM
f
4. Qrr - Area under curve defined by t
and I
5. di
current during tb portion of t
t
b
0.5
di(rec)M/dt
0.75
I
RRM
RRM
t
Qrr =
2
/dt - Peak rate of change of
(rec)M
rr
4
Q
rr
I
RRM
5
rr
X I
RRM
rr
Definitions
www.irf.com 9
Page 10
IRGP35B60PDPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE:
THIS IS AN I RF PE3 0
WIT H ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line
posi tion i ndicat es "Lead-Fr ee"
TO-247AC package is not recommended for Surface Mount Application.
INT ERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
This product has been designed and qualified for Industrial
PART NUMBER
IRFPE30
035H
56 57
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
Data and specifications subject to change without notice.
market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/04
10 www.irf.com
Page 11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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