Page 1
PD - 94623
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
SMPS IGBT
G
n-channel
IRGP35B60PD
C
E
I
D
V
= 600V
CES
V
@ V
typ. = 1.85V
CE(on)
= 15V IC = 22A
GE
Equivalent MOSFET
Parameters
R
typ. = 84mΩ
CE(on)
(FET equivalent) = 35A
E
C
G
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
V
CES
I
@ TC = 25°C Conti nu ou s Collector Curre nt 60
C
I
@ TC = 100°C
C
I
CM
I
LM
I
@ TC = 25°C Diode Continous Forward Current 40
F
I
@ TC = 100°C
F
I
FRM
V
GE
P
@ TC = 25°C Maxim um P o w er Dissipa tion 308 W
D
P
@ TC = 100°C
D
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Contin uous Colle ctor Current 34
Pulse Collector Current ( Ref. Fig. C. T.4) 120
Clampe d I n ductiv e Load Current
Diode Continous Forward Current 15
Maximum Repetitive Forwar d Cur r ent
Gate-to-Emitter Voltage ±20 V
Maximum Power Dissipation 123
Operating Junction and -55 to +150
Storag e Temperature Range °C
Solder ing Temperature for 10 sec. 300 (0.06 3 in. (1.6mm) from case)
Mounti ng Torque , 6- 32 or M3 Screw 10 lbf·in (1.1 N·m)
d
e
120 A
60
Thermal Resistance
Parameter Min. Typ. Max. Units
R
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.41 °C/W
θJC
R
θ
R
θCS
R
θ
(Diode)
JC
JA
Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––
Thermal Resistance, Junct ion-to-Ambient (typica l socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)
1 www.irf.com
2/6/03
Page 2
IRGP35B60PD
gy
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
R
G
V
CE(on)
V
GE(th)
∆V
(BR)CES
GE(th)
/∆T
/∆TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
J
Internal Gate Resistance — 1.7 —
Collector-to-Emitter Saturation Volta ge — 2.25 2.55 V
Gate Threshold Voltage 3.0 4.0 5.0 V
Threshold Voltage t e mp . c oefficient — -10 — mV/ °C
gfe Forward Transconductance — 36 — S
I
V
I
CES
FM
GES
Collector-to-Em itter Leakage Curr e nt — 3.0 375 µA
Diode Forward Voltage Drop — 1.30 1.70 V
Gate-to -E m itter Leakage Curr e nt — — ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
Qg Total Gate Charge (turn-on) — 160 240
Q
gc
Q
ge
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
C
eff.
oes
C
eff. (ER)
oes
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
t
rr
Q
rr
I
rr
Gate-to-Collector Char ge (turn-on) — 55 83 nC
Gate-to-Emitter Charge (turn-on) — 21 32
Turn-On Switching Loss — 220 270
Turn-Of f S witching Lo ss — 215 265 µJ
Tota l Switchi ng Loss — 435 535
Turn-On d elay time — 26 34
Rise time — 6.0 8.0 ns
Turn-Off de lay t i me — 110 122
Fall time — 8.0 10
Turn-On Switching Loss — 410 465
Turn-Of f S witching Lo ss — 330 405 µJ
Tota l Switchi ng Loss — 740 870
Turn-On d elay time — 26 34
Rise time — 8.0 11 ns
Turn-Off de lay t i me — 130 150
Fall time — 12 16
Input Capacitance — 3715 —
Outpu t C apacitance — 265 —
Rever s e Transfer Capacitance — 47 — pF f = 1 Mhz
Effectiv e Output C apacitance (Tim e Related)
Effective Output Capacitance (Ener
g
Related)
Diode Rev ers e R ec ov er y Tim e — 42 60 ns
Diode Rev ers e R ec ov er y Ch arge — 8 0 180 nC
Peak Reverse Recovery Current — 4.0 6.0 A
600 — — V
—0.78—V/°C
—1.852.15
—2.372.80
—3.003.45
—0.35—mA
—1.201.60
—135—
g
—179—
—74120
— 220 600
—6.510
V
= 0V, IC = 500µA
GE
V
= 0V, IC = 1mA (25°C-125°C)
GE
1MHz, Op en Collector
Ω
I
= 22A, VGE = 15V
C
= 35A, VGE = 15V
I
C
= 22A, VGE = 15V, TJ = 125°C
I
C
I
= 35A, VGE = 15V, TJ = 125°C
C
I
= 250µA
C
V
= VGE, IC = 1.0mA
CE
V
= 50V, IC = 22A, PW = 80µs
CE
= 0V, VCE = 600V
V
GE
= 0V, VCE = 600V, TJ = 125°C
V
GE
= 15A, VGE = 0V
I
F
= 15A, VGE = 0V, TJ = 125°C
I
F
V
= ±20V, VCE = 0V
GE
Conditions
= 22A
I
C
= 400V
V
CC
V
= 15V
GE
I
= 22A, VCC = 390V
C
V
= +15V, RG = 3.3Ω, L = 200µH
GE
T
J
= 22A, VCC = 390V
I
C
V
GE
T
J
I
= 22A, VCC = 390V
C
V
GE
T
J
= 22A, VCC = 390V
I
C
V
GE
T
J
V
GE
V
CC
V
GE
T
J
V
CC
Rg = 22Ω, VGE = +15V to 0V
T
J
T
J
T
J
T
J
T
J
T
J
f
= 25°C
= +15V, RG = 3.3Ω, L = 200µH
= 25°C
f
= +15V, RG = 3.3Ω, L = 200µH
= 125°C
f
= +15V, RG = 3.3Ω, L = 200µH
= 125°C
f
= 0V
= 30V
= 0V, VCE = 0V to 4 80V
= 150°C, IC = 120A
= 480V, Vp =600V
= 25°C IF = 15A, VR = 200V,
= 125°C
di/dt = 200A/µs
= 25°C IF = 15A, VR = 200V,
= 125°C
di/dt = 200A/µs
= 25°C IF = 15A, VR = 200V,
= 125°C
di/dt = 200A/µs
Ref.Fig
4, 5,6,8,9
7,8,9
10
17
CT1
CT3
CT3
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
16
15
3
CT2
19
21
19,20,21,22
CT5
Notes:
R
typ. = equivalent on-resistance = V
CE(on)
typ./ IC, where V
CE(on)
typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID
CE(on)
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
= 80% (V
CC
), VGE = 15V, L = 28 µH, RG = 22 Ω.
CES
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C
eff. is a fixed capacitance that gives the same charging time as C
oes
C
eff.(ER) is a fixed capacitance that stores the same energy as C
oes
2 www.irf.com
while VCE is rising from 0 to 80% V
oes
while VCE is rising from 0 to 80% V
oes
CES
CES
.
.
Page 3
IRGP35B60PD
70
60
50
40
)
A
(
C
I
30
20
10
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
100
)
A
C
I
10
350
300
250
)
200
W
(
t
o
t
150
P
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
70
VGE = 15V
VGE = 12V
60
VGE = 10V
VGE = 8.0V
50
VGE = 6.0V
)
40
A
(
E
C
I
30
20
1
10 100 1000
V
(V)
CE
Fig. 3 - Reverse Bias SOA
TJ = 150°C; V
70
VGE = 15V
60
VGE = 12V
VGE = 10V
50
VGE = 8.0V
VGE = 6.0V
)
40
A
(
E
C
I
30
20
10
0
012345
V
CE
GE
(V)
=15V
10
0
012345
V
(V)
CE
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
70
VGE = 15V
60
VGE = 12V
VGE = 10V
50
VGE = 8.0V
VGE = 6.0V
)
40
A
(
E
C
I
30
20
10
0
012345
V
(V)
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
www.irf.com 3
Page 4
IRGP35B60PD
800
700
TJ = 25°C
TJ = 125°C
600
500
)
A
(
400
E
C
I
300
200
TJ = 125°C
100
TJ = 25°C
0
0 5 10 15 20
V
(V)
GE
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
10
10
9
8
7
)
V
6
(
E
C
5
V
ICE = 11A
I
CE
I
CE
4
3
2
1
0 5 10 15 20
V
(V)
GE
Fig. 8 - Typical V
CE
vs. V
TJ = 25°C
100
= 22A
= 35A
GE
9
8
F
7
)
V
6
(
E
C
5
V
4
3
ICE = 11A
I
= 22A
CE
I
= 35A
CE
10
T = 150°C
J
T = 125°C
J
T = 25°C
Instant aneous Forward Cu rr e n t - I (A )
J
2
1
0 5 10 15 20
V
(V)
GE
Fig. 9 - Typical V
CE
vs. V
TJ = 125°C
800
GE
1
0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V (V)
FM
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
1000
700
600
)
500
J
µ
(
y
400
g
r
e
n
300
E
E
ON
E
OFF
200
)
s
100
n
(
e
m
i
T
g
n
i
h
c
i
w
S
td
OFF
td
ON
t
10
F
t
R
100
0
0 5 10 15 20 25 30 35 40
Fig. 11 - Typ. Energy Loss vs. I
TJ = 125°C; L = 200µH; V
Diode clamp used: 30ETH06 (See C.T.3)
IC (A)
= 390V, RG = 3.3Ω; V
CE
C
= 15V.
GE
1
0 10 20 30 40
Fig. 12 - Typ. Switching Time vs. I
TJ = 125°C; L = 200µH; V
Diode clamp used: 30ETH06 (See C.T.3)
IC (A)
= 390V, RG = 3.3Ω; V
CE
C
= 15V.
GE
4 www.irf.com
Page 5
IRGP35B60PD
800
700
600
)
500
J
µ
(
y
400
g
r
e
n
E
300
200
100
0
0 10 20 30 40 50
Fig. 13 - Typ. Energy Loss vs. R
TJ = 125°C; L = 200µH; V
Diode clamp used: 30ETH06 (See C.T.3)
30
25
20
)
J
µ
(
15
s
e
o
E
10
5
E
ON
= 390V, I
CE
E
OFF
RG (Ω)
= 22A; V
CE
1000
td
OFF
)
s
100
n
(
e
m
i
T
g
n
i
h
c
i
w
S
G
= 15V
GE
TJ = 125°C; L = 200µH; V
td
ON
t
F
10
t
R
1
0 10 20 30 40 50
RG (Ω)
Fig. 14 - Typ. Switching Time vs. R
= 390V, I
CE
= 22A; V
CE
G
= 15V
GE
Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
)
1000
F
p
(
e
c
n
a
t
i
c
a
p
a
100
C
Coes
Cres
0
0 100 200 300 400 500 600 700
VCE (V)
Fig. 15- Typ. Output Capacitance
Stored Energy vs. V
16
14
12
10
)
V
(
8
E
G
V
6
4
2
0
0 50 100 150 200
Q G, Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. V
I
= 22A
CE
CE
400V
GE
10
0 20 40 60 80 100
V
(V)
CE
Fig. 16- Typ. Capacitance vs. V
VGE= 0V; f = 1MHz
1.4
)
V
(
)
1.2
n
o
(
E
C
V
d
e
z
i
l
a
1.0
m
r
o
N
0.8
-50 0 50 100 150 200
TJ (°C)
Fig. 18 - Normalized Typ. V
vs. Junction Temperature
CE
CE(on)
IC = 22A, VGE= 15V
www.irf.com 5
Page 6
IRGP35B60PD
100
V = 200V
R
T = 125°C
J
T = 25°C
J
80
I = 30A
F
60
rr
t - (ns)
40
20
100 1000
di /d t - (A/µs)
I = 15A
F
I = 5.0A
F
f
Fig. 19 - Typical Reverse Recovery vs. dif/dt
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 30A
F
I = 15A
F
10
IRRM
I - (A)
I = 5.0A
F
1
100 1000
di /dt - (A/µs)
f
Fig. 20 - Typical Recovery Current vs. dif/dt
800
V = 200V
R
T = 125°C
J
T = 25°C
J
600
I = 30A
F
400
RR
Q - (nC)
I = 15A
F
I = 5.0A
F
200
0
100 1000
di /d t - (A/µs)
f
1000
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 5.0A
F
I = 15A
F
I = 30A
di(rec)M/dt - (A/µs)
F
100
100 1000
Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di
di /dt - (A/µs)
f
/dt vs. dif/dt,
(rec)M
6 www.irf.com
Page 7
IRGP35B60PD
τ
τ
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.01
0.02
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
1
R
1
R
2
3
R
2
τ
2
τ
2
Ri (°C/W) τi (sec)
R
3
τ
C
0.139 0.000257
τ
3
0.077 0.001418
τ
3
0.194 0.020178
Notes:
1. Duty Factor D = t1/t2
)
C
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
0.001
2. Peak Tj = P dm x Zt hjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Dur ation (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
)
C
1
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
0.001
D = 0.50
0.20
0.10
0.1
0.05
τ
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
1
R
1
R
2
3
R
2
τ
2
τ
2
Ri (°C/W) τi (sec)
R
3
τ
C
0.363 0.000112
τ
3
0.864 0.001184
τ
3
0.473 0.032264
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zt hjc + Tc
t1 , Rectangular Pulse Dur ation (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com 7
Page 8
IRGP35B60PD
0
1K
DUT
L
L
VCC
80 V
DUT
480V
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
PFC diode
L
DUT /
DRIVER
Rg
Fig.C.T.3 - Switching Loss Circuit
REVERSE RECOVERY CIRCUIT
VCC
Fig.C.T.2 - RBSOA Circuit
V
CC
R =
I
CM
DUT
Rg
Fig.C.T.4 - Resistive Load Circuit
VCC
V = 200V
R
Ω
0.01
L = 70µH
D.U.T.
dif/dt
ADJUST
G
D
IRFP250
S
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
8 www.irf.com
Page 9
IRGP35B60PD
450
400
350
tf
300
90% I
5% V
5% I
CE
CE
CE
250
(V)
200
CE
V
150
100
50
0
Eoff Loss
-50
-0.20 0.00 0.20 0.40 0.60 0.80
Time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
45
40
35
30
25
20
15
10
5
0
-5
450
400
350
TEST CURRENT
300
250
(V)
(A)
CE
I
200
CE
V
150
90% test current
100
5% V
50
0
CE
Eon Lo ss
-50
45
40
35
30
25
20
15
10
5
0
-5
(A)
CE
I
9.00 9.20 9.40 9.60
Time (µs)
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
I
F
0
1
di /dt
1. dif/dt - Rate of change of current
through zero crossing
2. I
- Peak reverse recovery current
RRM
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 I
extrapolated to zero current
RRM
and 0.50 I
RRM
Fig. WF3 - Reverse Recovery Waveform and
3
t
rr
t
a
2
I
RRM
f
4. Qrr - Area under curve defined by t
and I
5. di
current during tb portion of t
t
b
0.5
di(rec)M/dt
0.75
I
RRM
RRM
t
Qrr =
2
/dt - Peak rate of change of
(rec)M
rr
4
Q
rr
I
RRM
5
rr
X I
RRM
rr
Definitions
www.irf.com 9
Page 10
IRGP35B60PD
Notes: This part marking information applies to devices produced before 02/26/2001 or for
Notes: Th is p art markin g informat ion applies to device s produced a fter 02/26/2001
0
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
15.90 (.626)
15.30 (.602)
- B -
20.30 (.800)
19.70 (.775)
1
2
3
14.80 (.583)
*
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.21 5)
2X
3.40 (.13 3)
3.00 (.11 8)
TO-247AC Part Marking Information
3.65 (.143)
3.55 (.140)
0.25 (.01 0)
- A -
5.50 (.217)
2X
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
3X
1.00 (.039)
0.25 (.010)
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
- D -
M
M
D
B
5.50 (.217)
4.50 (.177)
M
S
A
C
Dimensions in Millimeters and (Inches)
2.50 (.089)
1.50 (.059)
3X
2.60 (.10 2)
2.20 (.08 7)
5.30 (.20 9)
4.70 (.18 5)
4
0.80 (.031)
0.40 (.016)
NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENS ION : INCH.
3 DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO-247AC.
LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
LONGER LEADED (20mm)
*
VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
parts manufactured in GB.
EX AMPLE: THI S IS AN IRFPE30
EXAMPLE:
WITH ASSEMBL Y
LOT CODE 3A1Q
THIS IS A N IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBL ED ON WW 35, 2000
IN THE ASSEMBLY LI NE "H"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LO T CO DE
IRFPE30
3A 1Q
IRFPE30
56 57
PART NUMBER
9302
DATE CODE
(YYWW)
YY = YEAR
WW = W EEK
PA RT NUMBER
035H
DATE CODE
YEAR 0 = 200
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
This product has been designed and qualified for Industrial
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
10 www.irf.com
Data and specifications subject to change without notice.
market.
Qualification Standards can be found on IR’s Web site.
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/03
Loading...