Datasheet irgp30b60kd-e Datasheet

IRGP30B60KD-E

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• Low VCE

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive V

• TO-247AD Package

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

Absolute Maximum Ratings

V

CES

IC @ TC = 25°C Continuous Collector Current 60 IC @ TC = 100°C Continuous Collector Current 30 I

CM

I

LM

IF @ TC = 25°C Diode Continuous Forward Current 60 IF @ TC = 100°C Diode Continuous Forward Current 30 I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 304 PD @ TC = 100°C Maximum Power Dissipation 122 T

J

T

STG

Non Punch Through IGBT Technology.

(on)

Temperature Coefficient.

CE (on)

Parameter Max. Units

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 120 Clamped Inductive Load Current  120 A

Diode Maximum Forward Current 120 Gate-to-Emitter Voltage ±20 V

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf•in (1.1N•m)

G

n-channel

C

E

TO-247AD

PD - 94388A

V

= 600V

CES

IC = 30A, TC=100°C

tsc > 10µs, TJ=150°C

V

typ. = 1.95V

CE(on)

W

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ––– 6.0 ––– g

Junction-to-Case - IGBT ––– ––– 0.41 Junction-to-Case - Diode ––– ––– 1.32 Case-to-Sink, flat, greased surface ––– 0.24 ––– Junction-to-Ambient, typical socket mount ––– ––– 40

°C/W

www.irf.com 1

10/14/02

IRGP30B60KD-E

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Qg Total Gate Charge (turn-on) ––– 102 153 IC = 30A Qge Gate - Emitter Charge (turn-on) ––– 14 21 nC VCC = 400V Qg c Gate - Collector Charge (turn-on) ––– 44 66 VGE = 15V E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

RBSOA Reverse Bias Safe Operting Area FULL SQUARE

SCSOA Short Circuit Safe Operting Area 10 ––– –––

Erec Reverse Recovery energy of the diode ––– 925 1165 µJ TJ = 150°C t

rr

I

rr

Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA

/∆T

Temperature Coeff. of Breakdown Voltage ––– 0.4 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)

J

Collector-to-Emitter Saturation Voltage ––– 1.95 2.35 V IC = 30A, VGE = 15V

––– 2.40 2.75 I

= 30A,VGE = 15V, TJ = 150°C

C

Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)

Forward Transconductance ––– 18 ––– S VCE = 50V, IC = 50A, PW=80µs Zero Gate Voltage Collector Current ––– 5.0 250 µA VGE = 0V, VCE = 600V

––– 1000 2000 V

= 0V, VCE = 600V, TJ = 150°C

GE

Diode Forward Voltage Drop ––– 1.30 1.55 V IF = 30A

––– 1.25 1.50 I

= 30A TJ = 150°C

F

Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Turn-On Switching Loss ––– 350 620 µJ IC = 30A, VCC = 400V Turn-Off Switching Loss ––– 825 955 VGE =15V, RG = 10Ω, L=200µH, Total Switching Loss ––– 1175 1575 L

= 150nH TJ = 25°C 

S

Turn-On Delay Time ––– 46 60 IC = 30A, VCC = 400V Rise Time ––– 28 39 VGE = 15V, RG = 10Ω L =200µH Turn-Off Delay Time ––– 185 200 ns L

= 150nH, TJ = 25°C

S

Fall Time ––– 31 40 Turn-On Switching Loss ––– 635 1085 IC = 30A, VCC = 400V Turn-Off Switching Loss ––– 1150 1350 µJ VGE = 15V,RG = 10Ω, L =200µH Total Switching Loss ––– 1785 2435 LS = 150nH TJ = 150°C  Turn-On Delay Time ––– 46 60 IC = 30A, VCC = 400V Rise Time ––– 28 39 VGE = 15V, RG = 10Ω L =200µH Turn-Off Delay Time ––– 205 235 ns LS = 150nH, TJ = 150°C Fall Time ––– 32 42 Input Capacitance ––– 1750 ––– VGE = 0V Output Capacitance ––– 160 ––– pF VCC = 30V Reverse Transfer Capacitance ––– 60 ––– f = 1.0MHz

TJ = 150°C, IC = 120A, Vp =600V VCC = 500V, VGE = +15V to 0V, TJ = 150°C, Vp =600V, RG = 10Ω

µs

VCC = 360V, VGE = +15V to 0V

Diode Reverse Recovery time ––– 125 ––– ns VCC = 400V, IF = 30A, L = 200µH Diode Peak Reverse Recovery Current ––– 43 48 A VGE = 15V,RG = 10Ω, LS = 150nH

RG=10Ω

Ref.Fig.

5, 6,7

9, 10,11

9,10,11

12

8

Ref.Fig.

23

CT.1

CT.4

13,15

WF1,WF2

CT.4

14, 16

WF1,WF2

22

4

CT.2

CT.3

WF.4

17,18,19

20,21

CT.4,WF.3

Notes:

 V

= 80% (V

CC

), VGE = 15V, L = 28µH, RG = 22Ω.  Energy losses include "tail" and diode reverse recovery.

CES

2 www.irf.com

IRGP30B60KD-E

80

60

) A

(

40

C

I

20

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

1000

350

300

250

)

200

W

(

t o

t

150

P

100

50

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

1000

100

10 µs

) A

(

10

C

I

1

0.1 1 10 100 1000 10000

V

CE

100 µs

1ms

DC

(V)

Fig. 3 - Forward SOA

TC = 25°C; T

≤ 150°C

J

100

) A

C

I

10

1

10 100 1000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 150°C; V

GE

=15V

www.irf.com 3

IRGP30B60KD-E

60

VGE = 18V

50

40

) A

(

30

E C

I

20

10

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

0

012345

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

60

VGE = 18V

50

40

) A

(

30

E C

I

20

10

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

0

012345

V

(V)

CE

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

60

VGE = 18V

50

40

) A

(

30

E C

I

20

10

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

0

012345

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

60

50

40

) A

(

30

F

I

20

10

0

0.0 0.5 1.0 1.5 2.0

-40°C 25°C

150°C

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

4 www.irf.com

IRGP30B60KD-E

20

18

16

14

12

) V

(

10

E C

V

8

6

4

2

0

5101520

V

Fig. 9 - Typical V

GE

ICE = 15A

I

CE

I

CE

(V)

CE

= 30A

= 60A

vs. V

GE

TJ = -40°C

20

18

16

14

12

) V

(

10

E C

V

8

6

4

2

0

5 101520

V

Fig. 10 - Typical V

GE

(V)

CE

ICE = 15A

I

= 30A

CE

I

= 60A

CE

vs. V

GE

TJ = 25°C

20

18

16

14

12

) V

(

10

E C

V

8

6

4

2

0

5101520

V

Fig. 11 - Typical V

GE

ICE = 15A

I

CE

I

CE

(V)

CE

= 30A

= 60A

vs. V

GE

TJ = 150°C

250

TJ = 25°C

200

150

) A

(

E C

I

100

TJ = 150°C

50

0

0 5 10 15 20

TJ = 150°C

V

(V)

GE

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

TJ = 25°C

www.irf.com 5

IRGP30B60KD-E

3000

2500

2000

) J µ

(

y g

r e n E

1500

1000

500

0

0 20406080

E

OFF

Fig. 13 - Typ. Energy Loss vs. I

TJ = 150°C; L = 200µH; V

RG = 10Ω; V

3000

IC (A)

GE

E

ON

CE

= 15V

C

= 400V

1000

) s n

( e m

i T

100

g n

i h c

i w S

10

0 20 40 60 80

td

OFF

td

ON

t

F

t

R

IC (A)

Fig. 14 - Typ. Switching Time vs. I TJ = 150°C; L = 200µH; V

RG = 10Ω; V

10000

GE

CE

= 15V

C

= 400V

2500

) s

2000

) J µ

( y

1500

g

r e n E

1000

500

0

0 25 50 75 100 125

E

OFF

RG (Ω)

E

ON

Fig. 15 - Typ. Energy Loss vs. R

TJ = 150°C; L = 200µH; V

I

= 30A; V

CE

GE

CE

= 15V

G

= 400V

1000

n

( e m

i T

g n

i h c

i w

100

S

td

OFF

td

ON

t

R

10

0 25 50 75 100 125

RG (Ω)

Fig. 16 - Typ. Switching Time vs. R

TJ = 150°C; L = 200µH; V

I

= 30A; V

CE

GE

CE

= 15V

t

F

= 400V

G

6 www.irf.com

IRGP30B60KD-E

50

45

40

35

30

) A

(

25

R R

I

20

15

10

5

0

0 20 40 60 80

R

IF (A)

Fig. 17 - Typical Diode I

RR

TJ = 150°C

50

45

40

35

30

) A

(

25

R R

I

20

15

10

5

0

0 500 1000 1500

diF /dt (A/µs)

R

G =

vs. I

G =

R

G =

R

G =

R

G =

100Ω

F

4.7Ω

10Ω

22Ω

47Ω

50

45

40

35

30

) A

(

25

R R

I

20

15

10

5

0

0 25 50 75 100 125

RG (

Ω)

Fig. 18 - Typical Diode I

RR

TJ = 150°C; IF = 30A

5000

4.7Ω

10Ω

22Ω

diF /dt (A/µs)

) C

n

(

R R

Q

4000

3000

2000

1000

100

0

0 500 1000 1500

47

Ω

vs. R

60A

G

30A

15A

Fig. 19- Typical Diode I

VCC= 400V; VGE= 15V;

vs. diF/dt

RR

Fig. 20 - Typical Diode Q

RR

VCC= 400V; VGE= 15V;TJ = 150°C

IF= 30A; TJ = 150°C

www.irf.com 7

IRGP30B60KD-E

1400

10000

)

1000

F p

( e

c n a

t

i c a p a

C

100

1200

1000

) J µ

800

( y

g

r e

600

n E

400

200

0

0 20 40 60 80

IF (A)

Fig. 21 - Typical Diode E

TJ = 150°C

Cies

) V

(

Coes

V

RR

E G

16

14

12

10

8

6

4

4.7Ω

10Ω

22

47

100

vs. I

Ω

F

200V

400V

Cres

10

0 20 40 60 80 100

V

(V)

CE

Fig. 22- Typ. Capacitance vs. V

CE

VGE= 0V; f = 1MHz

2

0

0 25 50 75 100 125

Q G, Total Gate Charge (nC)

Fig. 23 - Typical Gate Charge vs. V

I

= 30A; L = 600µH

CE

GE

8 www.irf.com

IRGP30B60KD-E

τ

10

)

1

C J h

t

Z (

e s n o p s e

0.01

R l a

m

r e h

0.001

T

0.0001

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

2

R

1

2

τ

2

τ

2

Ri (°C/W) τi (sec)

τ

C

0.200 0.000428

0.209 0.013031

Notes:

SINGLE PULSE ( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1 , Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

)

C

1

J h

t

Z (

e s n

0.1

o p s e

R l a

m

r e

0.01

h T

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

R

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

0.205 0.000136

τ

3

0.505 0.001645

τ

3

0.567 0.037985

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

www.irf.com 9

IRGP30B60KD-E

DUT

0

1K

L

VCC

80 V

DUT

480 V

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

diode clamp /

DUT

L

4x

DC

DUT

360V

- 5V

DUT /

DR IVER

Rg

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

V

CC

R =

I

CM

VCC

DUT

Rg

VCC

Fig.C.T.5 - Resistive Load Circuit

10 www.irf.com

IRGP30B60KD-E

t

700

600

90% I

CE

500

tf

400

(V)

300

CE

V

200

100

5% V

CE

5% I

CE

0

Eoff Loss

-100

-0.20 0.00 0.20 0.40 0.60 0.80

Time(µs)

Fig. WF1- Typ. Turn-off Loss Waveform

@ TJ = 150°C using Fig. CT.4

100

40

35

30

25

20

15

10

5

0

-5

(A)

CE

I

700

600

500

TEST CURRENT

400

(V)

300

CE

V

200

100

tr

90% tes t cur rent

10% test c urren

5% V

CE

0

Eon Loss

-100

15.90 16.00 16.10 16. 20 16.30

Time (µs)

Fig. WF2- Typ. Turn-on Loss Waveform

@ TJ = 150°C using Fig. CT.4

600

70

60

50

40

30

20

10

0

-10

300

(A) I

CE

0

Q

RR

-100 t

RR

-200

-300

(V)

F

V

-400

-500

Pe a k

I

RR

10%

Pe a k

IRR

-600

-700

-0.25 -0.05 0.15 0.35

time (µS)

Fig. WF3- Typ. Diode Recovery Waveform

@ TJ = 150°C using Fig. CT.4

30

20

10

0

-10

-20

-30

-40

500

400

(V)

(A)

F

I

300

CE

V

I

CE

V

CE

200

100

0

250

200

150

100

50

0

-5.00 0.00 5.00 10.00 15.00

time (µS)

Fig. WF4- Typ. S.C Waveform

@ TC = 150°C using Fig. CT.3

www.irf.com 11

(A)

CE

I

IRGP30B60KD-E

TO-247AD Case Outline and Dimensions

TO-247AD package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 10/02

12 www.irf.com