Page 1
PD- 93818A
IRGP30B120KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE(on) Non Punch Through (NPT)
Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
μs Short Circuit Capability
• 10
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive V
• Extended Lead TO-247AD Package
Benefits
• Benchmark Efficiency for Motor Control
Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
Absolute Maximum Ratings
(on) Temperature Coefficient
CE
G
N-channel
Motor Control Co-Pack IGBT
C
V
= 1200V
CES
E
VGE = 15V, IC = 25A, 25°C
TO-247AD
V
CE(on) typ.
= 2.28V
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current (Fig.1) 60
IC @ TC = 100°C Continuous Collector Current (Fig.1) 30
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 30
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation (Fig.2) 300
PD @ TC = 100°C Maximum Power Dissipation (Fig.2) 120
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 1200 V
Pulsed Collector Current (Fig.3, Fig. CT.5) 120
Clamped Inductive Load Current(Fig.4, Fig. CT.2) 120 A
Diode Maximum Forward Current 120
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
°C
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
W
t
Z
θ
JC
Junction-to-Case - IGBT ––– ––– 0.42
Junction-to-Case - Diode ––– ––– 0.83 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 40
Weight ––– 6 (0.21) ––– g (oz)
Transient Thermal Impedance Junction-to-Case (Fig.24)
www.irf.com 1
9/17/07
Page 2
IRGP30B120KD-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Fig.
V
(BR)CES
ΔV
(BR)CES
Collector-to-Em itter Breakdown Voltage
/ ΔTj
Temperature Coeff. of Breakdown Voltage
1200 V
+1.2 V/°C
2.28 2.48
V
CE(on)
Collector-to-Emitter Saturation
Voltage
2.46 2.66
3.43 4.00 V
2.74 3.10
2.98 3.35
V
ΔV
g
GE(th)
GE(th)
fe
Gate Threshold Voltage
/ ΔTj
Temperature Coeff. of Threshold Voltage
Forward Transconductance
4.0 5.0 6.0 V
- 1.2
14.8 16.9 19.0 S
250
I
CES
Zero Gate Voltage Collector Current
325 675 μA
2000
1.76 2.06
V
FM
Diode Forward Voltage Drop
1.86 2.17 V
1.87 2.18
2.01 2.40
I
GES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Fig.
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
td(on)
tr
td(off)
tf
C
ies
C
oes
C
res
RBSOA
SCSOA
E
rec
trr
Irr
Le
Total Gate charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-on Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse bias safe operating area
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recov ery time
Peak Reverse Recovery Current
Internal Emitter Inductance
169 254
19 29 nC
82 123
1066 1250
1493 1800 μJ
2559 3050
1660 1856
2118 2580 μJ
3778 4436
50 65
25 35 ns
210 230
60 75
2200
210 pF
85
FULL SQUARE
10 ---- ---- μs
1820 2400 μJ
300 ns
34 38 A
13 nH
2 www.irf.com
V
= 0V,Ic =250 μA
GE
V
= 0V, Ic = 1 mA ( 25 -125 oC )
GE
IC = 25A, VGE = 15V
IC = 30A, VGE = 15V
IC = 60A, VGE = 15V
IC = 25A, VGE = 15V, TJ = 125°C
IC = 30A, VGE = 15V, TJ = 125°C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 1 mA ( 25 -125 oC )
mV/oC
VCE = 50V, IC = 25A, PW=80μs
V
= 0V,VCE = 1200V
GE
VGE = 0v, VCE = 1200V, TJ =125°C
VGE = 0v, VCE = 1200V, TJ =150°C
IC = 25A
IC = 30A
IC = 25A, TJ = 125°C
IC = 30A, TJ = 125°C
VGE = ±20V
IC = 25A
VCC =600V
VGE = 15V
IC = 25A, VCC = 600V
VGE = 15V, Rg = 5Ω,
TJ = 25oC, Energy losses include tail
and diode reverse recovery
Ic =25A, VCC=600V
VGE = 15V, Rg = 5Ω,
TJ = 125oC, Energy losses include tail
and diode reverse recovery
Ic =25A, VCC=600V
VGE = 15V, Rg = 5Ω,
TJ = 125oC,
VGE = 0V
VCC = 30V
f = 1.0 MHz
=150oC, Ic = 120A
T
J
VCC = 1000V, VP = 1200V
Rg = 5Ω, VGE = +15V to 0 V
T
= 150oC
J
VCC = 900V,VP = 1200V
Rg = 5Ω, VGE = +15V to 0 V
TJ = 125oC
VCC = 600V, Ic = 25A
VGE = 15V, Rg = 5Ω,
Measured 5 mm from the package.
L=200μH
L=200μH
L=200μH
L=200μH
5, 6
7, 9
10
11
9,10,11,12
8
23
CT 1
CT 4
WF1
WF2
13, 15
CT 4
WF1 & 2
14, 16
CT 4
WF1
WF2
22
4
CT 2
CT 3
WF4
17,18,19
20, 21
CT 4 , WF 3
Page 3
IRGP30B120KD-E
Fig.1 - Maxim um DC Collector
Current vs. Case Temperature
70
60
50
40
( A )
C
I
30
20
10
0
0 40 80 120 160
TC (°C)
Fig.2 - Power Dissipation vs. Case
Temperature
320
280
240
200
( W )
160
t o t
P
120
80
40
0
0 40 80 120 160
(°C)
T
C
1000
Fig.3 - Forward SOA
T
=25°C; Tj< 150°C
C
1000
Fig.4 - Reverse Bias SOA
Tj = 150°C, V
GE
= 15V
PULSED
100
2μs
10μs
100
100μ s
10
( A )
C
I
1ms
( A )
C
I
10
1
0.1
1 10 100 1000 10000
V
(V)
CE
DC
10ms
1
1 10 100 1000 10000
V
(V)
CE
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Page 4
IRGP30B120KD-E
V
E
V
Fig.5 - Typical IGBT Output
Characteristics
Tj= -40°C; tp=300μs
60
VGE = 18V
55
V
= 15V
GE
= 12V
V
GE
50
= 10V
V
GE
45
V
= 8V
GE
40
35
30
( A )
C
I
25
20
15
10
5
0
0123456
(V)
V
CE
Fig.6 - Typical IGBT Output
Characteristics
Tj=25°C; tp=300μs
60
55
50
45
40
VGE = 18V
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
= 8
G
35
30
( A )
C
I
25
20
15
10
5
0
0123456
V
(V)
CE
Fig.7 - Typical IGBT Output
Characteristics
Tj=125°C; tp=300μs
60
55
50
45
40
VGE = 18V
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8V
GE
35
30
( A )
C
I
25
20
15
10
5
0
0123456
VCE (V)
Fig.8 - Typical Diode Forward
Characteristic
60
55
tp=300μs
- 40°C
25°C
50
125°C
45
40
35
30
( A )
F
I
25
20
15
10
5
0
01234
(V)
V
F
4 www.irf.com
Page 5
IRGP30B120KD-E
j
C
V
V
E
Fig.9 - Typical VCE vs V
GE
Tj= -40°C
20
18
16
14
12
( V )
C E
V
10
8
ICE=10A
I
CE
I
CE
6
4
2
0
6 8 10 12 14 16 18 20
VGE (V)
=25A
=50A
Fig.10 - Typical
CE
vs
Tj= 25°C
20
18
16
14
12
( V )
C E
V
10
8
ICE=10A
I
CE
I
CE
6
4
2
0
6 8 10 12 14 16 18 20
V
(V)
GE
GE
=25A
=50A
Fig.11 - Typical VCE vs V
Tj= 125°C
20
GE
Fig.12 - Typ. Transf er Characteristics
=20V; tp=20μ s
V
CE
250
Tj=25°C
18
16
14
12
( V )
10
C E
V
8
6
4
2
ICE=10A
=25A
I
CE
=50A
I
C
225
200
175
150
125
( A )
C
I
100
75
50
25
T
=125°
Tj=125°C
Tj=25°C
0
6 8 10 12 14 16 18 20
(V)
V
GE
0
048121620
V
(V)
GE
www.irf.com 5
Page 6
IRGP30B120KD-E
ftrtf
n
f
n
f
r
Fig.13 - Typical Energy Loss vs Ic
Tj=125°C; L=200μH; V
Rg=22
; VGE=15V
Ω
=600V;
CE
8000
7000
6000
5000
4000
3000
E n e r g y ( μ J )
2000
1000
0
0 102030405060
IC (A)
Eo
Eof
Fig.14 - Typical Switching Time vs Ic
Tj=125°C; L=200μH; V
Rg=22
1000
100
t ( n S )
10
0 102030405060
;VGE=15V
Ω
IC (A)
=600V;
CE
tdof
tf
t
tdo
Fig.15 - Typical Energy Loss vs Rg
Tj=125°C; L=200μH; V
=25A; VGE=15V
I
CE
=600V;
CE
3500
3300
3100
2900
2700
2500
2300
E n e r g y ( u J )
2100
1900
1700
1500
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
Eon
Eoff
Fig.16 - Typical Switching Time vs Rg
Tj=125°C; L=200μH; V
I
1000
100
=25A; VGE=15V
CE
CE
t ( n S )
10
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
=600V;
tdof
tdon
6 www.irf.com
Page 7
IRGP30B120KD-E
Ω
Ω
Ω
0
Ω
Fig.17 - Typical Diode IRR vs I
45
40
35
Rg=5
30
25
Rg=10
( A )
20
R R
I
Rg=22
15
Rg=51
10
5
0
0 102030405060
Tj=125°C
Ω
Ω
Ω
Ω
IF (A)
F
Fig.18 - Typical Diode IRR vs Rg
Tj=125°C; I
=25A
F
45
40
35
30
25
( A )
20
R R
I
15
10
5
0
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
Fig.19 - Typical Diode IRR vs dIF/dt
V
=600V; VGE=15V
CC
I
=25A; Tj=125°C
45
F
40
Rg=5
35
Ω
30
25
( A )
R R
20
I
15
10
Rg=51
Rg=1
Rg=22
5
0
0 500 1000 1500
dI
/ dt (A/μs)
F
7000
6500
6000
5500
5000
( n C )
R R
4500
Q
4000
3500
3000
2500
Fig.20 - Typical Diode Q
VCC=600V; VGE=15V; Tj=125°C
22
51
Ω
10
RR
5
Ω
Ω
50A
40A
30A
25A
20A
0 500 1000 1500
/ dt (A/μs)
dI
F
www.irf.com 7
Page 8
IRGP30B120KD-E
Ω10Ω
Ω
V
V
Fig.21 - Typ. Diode E
rec
vs. I
Tj=125°C
2400
2200
2000
1800
1600
1400
E n e r g y ( u J )
1200
1000
800
0 102030405060
IF (A)
F
5
22
Ω
51
Fig.22 - Typical Capacitance vs V
VGE=0V; f=1MHz
10000
1000
C
100
C a p a c I t a n c e ( p F )
C
10
0 20406080100
VCE (V)
CE
Fig.23 - Typ. Gate Charge vs. V
GE
IC=25A; L=600μH
16
14
C
ies
12
10
( V )
8
oes
res
G E
V
6
4
2
0
0 40 80 120 160 200
600
800
QG, Total Gate Charge (nC)
8 www.irf.com
Page 9
10
2
5
2
θ
0.1
0.01
IRGP30B120KD-E
Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case
1
D =0.
0.
0.1
0.05
P
DM
0.0
t
0.01
SINGLE
PULSE
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1
t
2
/ t
1
2
+ T
thJC
C
0.001
0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000
, Rectangular Pulse Duration (sec)
t
1
www.irf.com 9
Page 10
IRGP30B120KD-E
Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit
L
L
DUT
VCC
0
1K
80 V
DUT
Rg
1000V
Fig. CT.3 - S.C. SOA Circuit
Driver
D
C
DUT
Fig. CT.5 - Resistive Load Circuit
900V
Fig. CT.4 - Switching Loss Circuit
diode clamp /
DUT
V
CC
R =
I
CM
- 5V
Rg
L
DUT /
DRIVER
VCC
DUT
Rg
VCC
10 www.irf.com
Page 11
Fig. WF.1 - Typ. Turn-off Loss Waveform
IRGP30B120KD-E
Fig. WF.2 - Typ. Turn-on Loss Waveform
@ Tj=125°C using Fig. CT.4
800
700
600
500
400
( V )
C E
300
V
200
100
0
-100
-0.50.00.51.01.52.02.5
90% I
CE
t f
5% V
CE
5% I
CE
Eoff Loss
t I me (μs)
@ Tj=125°C using Fig. CT.4
40
35
30
25
20
( A )
C E
I
15
10
5
0
-5
900
800
700
TEST CURRENT
600
500
( V )
400
C E
V
300
200
100
0
-100
4.04.14.24.34.44.5
Eon Loss
90% test c urrent
t r
10% test c urrent
5% V
t I me (μs)
CE
45
40
35
30
25
20
( A )
C E
I
15
10
5
0
-5
Fig. WF.3 - Typ. Diode Recovery Waveform
@ Tj=125°C using Fig. CT.4
-200
-400
0
Q
RR
t
RR
30
20
10
Fig. WF.4 - Typ. S.C. Waveform
@ TC=150°C using Fig. CT.3
1200
1000
800
V
250
200
150
I
( V )
-600
C E
V
-800
Peak
I
RR
-1000
-1200
-0.5 0.0 0.5 1 .0
t I me (μS)
Peak
10%
I
RR
0
-10
-20
-30
( A )
C E
I
(V)
CE
V
600
400
200
100
50
0
0
-50
-5 0 5 10 15 20 25 30
time (μS)
www.irf.com 11
(A)
CE
I
Page 12
IRGP30B120KD-E
TO-247AD Package Outline (Dimensions are shown in millimeters (inches))
9. For the most current drawing please refer to IR website
at http://www.irf.com/package/pkigbt.html
TO-247AC package is not recommended for Surface Mount Application.
TO-247AD Part Marking Information
EXAMPLE: THI S IS AN IRGP30B120K D-E
WITH ASSEMBLY
LOT CODE 5657
ASS EMBLE D ON WW 35, 2000
IN T HE ASSEMBLY LINE "H"
Note: "P" in as sembly line position
in dicates "L ead-F r ee"
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
INTERNATIONAL
RECTIFIE R
LOGO
AS S E MB L Y
LOT CODE
56 57
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 9/07
12 www.irf.com
035H
PART NUMBE R
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
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